JP4956919B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP4956919B2
JP4956919B2 JP2005167676A JP2005167676A JP4956919B2 JP 4956919 B2 JP4956919 B2 JP 4956919B2 JP 2005167676 A JP2005167676 A JP 2005167676A JP 2005167676 A JP2005167676 A JP 2005167676A JP 4956919 B2 JP4956919 B2 JP 4956919B2
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Japan
Prior art keywords
film
insulating film
wiring
semiconductor device
manufacturing
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Expired - Lifetime
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JP2005167676A
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English (en)
Japanese (ja)
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JP2006344703A (ja
JP2006344703A5 (enExample
Inventor
純司 野口
隆 松本
隆文 大島
利彦 小野塚
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2005167676A priority Critical patent/JP4956919B2/ja
Priority to US11/446,137 priority patent/US7501347B2/en
Publication of JP2006344703A publication Critical patent/JP2006344703A/ja
Publication of JP2006344703A5 publication Critical patent/JP2006344703A5/ja
Priority to US12/320,357 priority patent/US7911055B2/en
Priority to US12/929,782 priority patent/US8247902B2/en
Application granted granted Critical
Publication of JP4956919B2 publication Critical patent/JP4956919B2/ja
Priority to US13/541,229 priority patent/US8586447B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2005167676A 2005-06-08 2005-06-08 半導体装置およびその製造方法 Expired - Lifetime JP4956919B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2005167676A JP4956919B2 (ja) 2005-06-08 2005-06-08 半導体装置およびその製造方法
US11/446,137 US7501347B2 (en) 2005-06-08 2006-06-05 Semiconductor device and manufacturing method of the same
US12/320,357 US7911055B2 (en) 2005-06-08 2009-01-23 Semiconductor device and manufacturing method of the same
US12/929,782 US8247902B2 (en) 2005-06-08 2011-02-15 Semiconductor device and manufacturing method of the same
US13/541,229 US8586447B2 (en) 2005-06-08 2012-07-03 Semiconductor device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005167676A JP4956919B2 (ja) 2005-06-08 2005-06-08 半導体装置およびその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2009207688A Division JP5326949B2 (ja) 2009-09-09 2009-09-09 半導体装置
JP2012010607A Division JP2012080133A (ja) 2012-01-23 2012-01-23 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2006344703A JP2006344703A (ja) 2006-12-21
JP2006344703A5 JP2006344703A5 (enExample) 2008-07-17
JP4956919B2 true JP4956919B2 (ja) 2012-06-20

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JP (1) JP4956919B2 (enExample)

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JP5303139B2 (ja) * 2007-11-22 2013-10-02 シャープ株式会社 半導体装置及びその製造方法
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JP2009194286A (ja) * 2008-02-18 2009-08-27 Panasonic Corp 半導体装置及びその製造方法
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Also Published As

Publication number Publication date
JP2006344703A (ja) 2006-12-21
US20110140275A1 (en) 2011-06-16
US20120270390A1 (en) 2012-10-25
US20060281298A1 (en) 2006-12-14
US7911055B2 (en) 2011-03-22
US8586447B2 (en) 2013-11-19
US8247902B2 (en) 2012-08-21
US7501347B2 (en) 2009-03-10
US20090142919A1 (en) 2009-06-04

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