JP4939744B2 - 異種のゲート絶縁膜を有する半導体素子及びその製造方法 - Google Patents
異種のゲート絶縁膜を有する半導体素子及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title description 45
- 238000000034 method Methods 0.000 title description 30
- 239000003989 dielectric material Substances 0.000 claims description 80
- 239000000758 substrate Substances 0.000 claims description 53
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 46
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 46
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 30
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 4
- 229910045601 alloy Inorganic materials 0.000 claims 4
- 238000000137 annealing Methods 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 229920005591 polysilicon Polymers 0.000 description 14
- 239000007789 gas Substances 0.000 description 13
- 101710116852 Molybdenum cofactor sulfurase 1 Proteins 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
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- 239000012535 impurity Substances 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005527 interface trap Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910002064 alloy oxide Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- -1 AlCl 3 Chemical compound 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
Description
102A 第1ゲート絶縁膜
102B 第2ゲート絶縁膜
104 n−タイプチャンネル領域
106 p−タイプチャンネル領域
110 インタフェース層
120 ハフニウム酸化膜
130 アルミニウム酸化膜
140a、140b 導電性ポリシリコン層
152 NMOSトランジスタ
154 PMOSトランジスタ。
Claims (9)
- 第1基板領域、第1ゲート電極、及び前記第1基板領域と第1ゲート電極との間に位置する第1ゲート絶縁膜を具備する第1トランジスタと、
第2基板領域、第2ゲート電極、及び前記第2基板領域と第2ゲート電極との間に位置する第2ゲート絶縁膜を具備する第2トランジスタと、を含み、
前記第1ゲート絶縁膜は誘電定数が8以上である第1高誘電物質膜を含み、前記第2ゲート絶縁膜は誘電定数が8以上である第2高誘電物質膜を含み、前記第2高誘電物質膜は前記第1高誘電物質膜とは異なる物質であることを特徴とする半導体素子であって、
前記第1トランジスタはNMOS素子であり、前記第2トランジスタはPMOS素子であり、
前記第1ゲート絶縁膜は、誘電定数が8以上である第3高誘電物質膜を含み、
前記第1高誘電物質膜はハフニウム酸化膜であり、前記第2高誘電物質膜及び第3高誘電物質膜はアルミニウム酸化膜であり、
前記第1高誘電物質膜及び第2高誘電物質膜は、同一平面上にあることを特徴とする半導体素子。 - 前記第1高誘電物質膜は、前記第1基板領域と前記第3高誘電物質膜との間に位置することを特徴とする請求項1に記載の半導体素子。
- 前記第1高誘電物質膜と前記第3高誘電物質膜との間にあるインタフェース層は、前記第1高誘電物質膜と前記第3高誘電物質膜との合金であることを特徴とする請求項1または2に記載の半導体素子。
- 前記合金はハフニウム、アルミニウム及び酸素を含むことを特徴とする請求項3に記載の半導体素子。
- 第1基板領域、第1ゲート電極、及び前記第1基板領域と第1ゲート電極との間に位置する第1ゲート絶縁膜を具備する第1トランジスタと、
第2基板領域、第2ゲート電極、及び前記第2基板領域と第2ゲート電極との間に位置する第2ゲート絶縁膜を具備する第2トランジスタと、を含み、
前記第1ゲート絶縁膜は誘電定数が8以上である第1高誘電物質膜を含み、前記第2ゲート絶縁膜は誘電定数が8以上である第2高誘電物質膜を含み、前記第2高誘電物質膜は前記第1高誘電物質膜とは異なる物質であることを特徴とする半導体素子であって、
前記第1トランジスタはNMOS素子であり、前記第2トランジスタはPMOS素子であり、
前記第2ゲート絶縁膜は、誘電定数が8以上である第3高誘電物質膜を含み、
前記第1高誘電物質膜及び第3高誘電物質膜はハフニウム酸化膜を含み、前記第2高誘電物質膜はアルミニウム酸化膜を含み、
前記第1高誘電物質膜及び第2高誘電物質膜は、同一平面上にあることを特徴とする半導体素子。 - 前記第2高誘電物質膜は、前記第2基板領域と前記第3高誘電物質膜との間に位置することを特徴とする請求項5に記載の半導体素子。
- 前記第2高誘電物質膜と前記第3高誘電物質膜との間にあるインタフェース層は、前記第2高誘電物質膜と前記第3高誘電物質膜との合金であることを特徴とする請求項5または6に記載の半導体素子。
- 前記合金はハフニウム、アルミニウム及び酸素を含むことを特徴とする請求項7に記載の半導体素子。
- 前記第1ゲート絶縁膜及び第2ゲート絶縁膜の厚さは、0.2〜50Åであることを特徴とする請求項1〜8のいずれか1項に記載の半導体素子。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2003-079908 | 2003-11-12 | ||
KR1020030079908A KR100618815B1 (ko) | 2003-11-12 | 2003-11-12 | 이종의 게이트 절연막을 가지는 반도체 소자 및 그 제조방법 |
US10/930,943 | 2004-09-01 | ||
US10/930,943 US20050098839A1 (en) | 2003-11-12 | 2004-09-01 | Semiconductor devices having different gate dielectrics and methods for manufacturing the same |
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JP2005150737A JP2005150737A (ja) | 2005-06-09 |
JP4939744B2 true JP4939744B2 (ja) | 2012-05-30 |
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US (1) | US7586159B2 (ja) |
EP (1) | EP1531496B1 (ja) |
JP (1) | JP4939744B2 (ja) |
CN (1) | CN100442517C (ja) |
DE (1) | DE602004009740T2 (ja) |
TW (1) | TWI258811B (ja) |
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