JP4939735B2 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
JP4939735B2
JP4939735B2 JP2004179692A JP2004179692A JP4939735B2 JP 4939735 B2 JP4939735 B2 JP 4939735B2 JP 2004179692 A JP2004179692 A JP 2004179692A JP 2004179692 A JP2004179692 A JP 2004179692A JP 4939735 B2 JP4939735 B2 JP 4939735B2
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Japan
Prior art keywords
memory cell
element formation
formation region
integrated circuit
circuit device
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Expired - Fee Related
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JP2004179692A
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English (en)
Japanese (ja)
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JP2004336065A5 (enExample
JP2004336065A (ja
Inventor
恵介 塚本
良広 池田
勉 岡崎
大介 岡田
博史 柳田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004179692A priority Critical patent/JP4939735B2/ja
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Publication of JP2004336065A5 publication Critical patent/JP2004336065A5/ja
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  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2004179692A 2004-06-17 2004-06-17 半導体集積回路装置 Expired - Fee Related JP4939735B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004179692A JP4939735B2 (ja) 2004-06-17 2004-06-17 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004179692A JP4939735B2 (ja) 2004-06-17 2004-06-17 半導体集積回路装置

Related Parent Applications (1)

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JP2001263736A Division JP3597495B2 (ja) 2001-08-31 2001-08-31 半導体集積回路装置

Publications (3)

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JP2004336065A JP2004336065A (ja) 2004-11-25
JP2004336065A5 JP2004336065A5 (enExample) 2008-10-02
JP4939735B2 true JP4939735B2 (ja) 2012-05-30

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ID=33509327

Family Applications (1)

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JP2004179692A Expired - Fee Related JP4939735B2 (ja) 2004-06-17 2004-06-17 半導体集積回路装置

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JP (1) JP4939735B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218881A (ja) * 2007-03-07 2008-09-18 Nec Electronics Corp 半導体装置
KR101192359B1 (ko) 2007-12-17 2012-10-18 삼성전자주식회사 Ｎａｎｄ 플래시 메모리 소자 및 그 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196462A (ja) * 1989-01-24 1990-08-03 Mitsubishi Electric Corp 半導体装置
JPH0997762A (ja) * 1995-07-26 1997-04-08 Toshiba Corp 半導体装置の製造方法
JPH1022480A (ja) * 1996-07-05 1998-01-23 Hitachi Ltd 不揮発性半導体記憶装置及びその製造方法
JP3110328B2 (ja) * 1996-11-19 2000-11-20 日本電気アイシーマイコンシステム株式会社 半導体記憶装置
JPH10242420A (ja) * 1997-02-27 1998-09-11 Toshiba Corp 半導体装置およびその製造方法
JP3519583B2 (ja) * 1997-09-19 2004-04-19 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JP2001332708A (ja) * 2000-05-19 2001-11-30 Nec Corp 不揮発性半導体記憶装置及びその製造方法

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JP2004336065A (ja) 2004-11-25

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