JP4928811B2 - 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 - Google Patents

窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 Download PDF

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Publication number
JP4928811B2
JP4928811B2 JP2006078726A JP2006078726A JP4928811B2 JP 4928811 B2 JP4928811 B2 JP 4928811B2 JP 2006078726 A JP2006078726 A JP 2006078726A JP 2006078726 A JP2006078726 A JP 2006078726A JP 4928811 B2 JP4928811 B2 JP 4928811B2
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Prior art keywords
nitride
based semiconductor
layer
groove
region
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JP2006078726A
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Japanese (ja)
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JP2006303471A (ja
JP2006303471A5 (enExample
Inventor
隆司 狩野
雅幸 畑
康彦 野村
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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Priority to JP2006078726A priority Critical patent/JP4928811B2/ja
Priority to US11/523,531 priority patent/US20070221932A1/en
Priority to CNA2006101543585A priority patent/CN101043121A/zh
Publication of JP2006303471A publication Critical patent/JP2006303471A/ja
Publication of JP2006303471A5 publication Critical patent/JP2006303471A5/ja
Priority to US12/576,813 priority patent/US8519416B2/en
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JP2006078726A 2005-03-24 2006-03-22 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 Expired - Fee Related JP4928811B2 (ja)

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Application Number Priority Date Filing Date Title
JP2006078726A JP4928811B2 (ja) 2005-03-24 2006-03-22 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
US11/523,531 US20070221932A1 (en) 2006-03-22 2006-09-20 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
CNA2006101543585A CN101043121A (zh) 2006-03-22 2006-09-22 氮化物类半导体发光元件及其制造方法
US12/576,813 US8519416B2 (en) 2006-03-22 2009-10-09 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device

Applications Claiming Priority (3)

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JP2005086669 2005-03-24
JP2005086669 2005-03-24
JP2006078726A JP4928811B2 (ja) 2005-03-24 2006-03-22 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子

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JP2010100715A Division JP5580655B2 (ja) 2005-03-24 2010-04-26 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子

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JP2006303471A JP2006303471A (ja) 2006-11-02
JP2006303471A5 JP2006303471A5 (enExample) 2007-03-01
JP4928811B2 true JP4928811B2 (ja) 2012-05-09

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008018038A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
JP2009283912A (ja) 2008-04-25 2009-12-03 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
JP5004989B2 (ja) 2009-03-27 2012-08-22 シャープ株式会社 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置
JP4927121B2 (ja) 2009-05-29 2012-05-09 シャープ株式会社 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法
JP5261313B2 (ja) * 2009-07-31 2013-08-14 シャープ株式会社 窒化物半導体ウェハ、窒化物半導体素子および窒化物半導体素子の製造方法
JP5627871B2 (ja) * 2009-10-30 2014-11-19 フューチャー ライト リミテッド ライアビリティ カンパニー 半導体素子およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3206555B2 (ja) * 1998-08-13 2001-09-10 日本電気株式会社 窒化ガリウム系半導体発光素子及びその製造方法
JP2003017808A (ja) * 2001-07-04 2003-01-17 Sony Corp 窒化ガリウム系半導体発光素子
JP2003179311A (ja) * 2001-12-12 2003-06-27 Sony Corp ＧａＮ系半導体レーザ素子及びその作製方法
JP4056481B2 (ja) * 2003-02-07 2008-03-05 三洋電機株式会社 半導体素子およびその製造方法
JP3913194B2 (ja) * 2003-05-30 2007-05-09 シャープ株式会社 窒化物半導体発光素子
JP4540347B2 (ja) * 2004-01-05 2010-09-08 シャープ株式会社 窒化物半導体レーザ素子及び、その製造方法

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