JP4926337B2 - 光源 - Google Patents

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Publication number
JP4926337B2
JP4926337B2 JP2001188140A JP2001188140A JP4926337B2 JP 4926337 B2 JP4926337 B2 JP 4926337B2 JP 2001188140 A JP2001188140 A JP 2001188140A JP 2001188140 A JP2001188140 A JP 2001188140A JP 4926337 B2 JP4926337 B2 JP 4926337B2
Authority
JP
Japan
Prior art keywords
substrate
light emitting
emitting diode
recess
light source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001188140A
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English (en)
Japanese (ja)
Other versions
JP2002064226A5 (enExample
JP2002064226A (ja
Inventor
ハック・ヒム・コーエイ
セオン・チョン・リム
チェン・ホワイ・タン
グービル・シン
チー・ケオン・チョン
スンダー・エイエル・ナタラヤン・ヨガナンダン
Original Assignee
アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド filed Critical アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド
Publication of JP2002064226A publication Critical patent/JP2002064226A/ja
Publication of JP2002064226A5 publication Critical patent/JP2002064226A5/ja
Application granted granted Critical
Publication of JP4926337B2 publication Critical patent/JP4926337B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Led Device Packages (AREA)
  • Transforming Electric Information Into Light Information (AREA)
JP2001188140A 2000-06-28 2001-06-21 光源 Expired - Fee Related JP4926337B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
MY20002918 2000-06-28
MYPI20002918 2000-06-28
MYPI20002918 2000-06-28

Publications (3)

Publication Number Publication Date
JP2002064226A JP2002064226A (ja) 2002-02-28
JP2002064226A5 JP2002064226A5 (enExample) 2008-08-07
JP4926337B2 true JP4926337B2 (ja) 2012-05-09

Family

ID=19749463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001188140A Expired - Fee Related JP4926337B2 (ja) 2000-06-28 2001-06-21 光源

Country Status (4)

Country Link
US (1) US6806583B2 (enExample)
EP (1) EP1168461B1 (enExample)
JP (1) JP4926337B2 (enExample)
DE (1) DE60130520T2 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030102527A1 (en) * 1997-12-31 2003-06-05 Bily Wang Method of fabricating light emitting diode package
US7268479B2 (en) * 2001-02-15 2007-09-11 Integral Technologies, Inc. Low cost lighting circuits manufactured from conductive loaded resin-based materials
DE10142654A1 (de) * 2001-08-31 2003-04-03 Osram Opto Semiconductors Gmbh Sicherungsbauelement mit optischer Anzeige
US6906403B2 (en) * 2002-06-04 2005-06-14 Micron Technology, Inc. Sealed electronic device packages with transparent coverings
DE10246786A1 (de) * 2002-10-08 2004-04-22 Ultrastar Limited Gehäusekonstruktion einer LED für Oberflächenmontage sowie Verfahren zum Herstellen derselben
ITMI20022467A1 (it) * 2002-11-20 2004-05-21 St Microelectronics Srl Processo per realizzare un transistore di selezione di byte per
TW560697U (en) * 2002-11-26 2003-11-01 Topson Technology Co Ltd Surface-mounting type light-emitting diode structure
JP4281363B2 (ja) * 2003-01-20 2009-06-17 パナソニック電工株式会社 配線板及び発光装置
US7734168B2 (en) * 2003-01-21 2010-06-08 Fujifilm Corporation Lighting apparatus, electronic flash apparatus and camera
JP3948417B2 (ja) * 2003-02-28 2007-07-25 ノーリツ鋼機株式会社 光源ユニット
US20040173808A1 (en) * 2003-03-07 2004-09-09 Bor-Jen Wu Flip-chip like light emitting device package
US7220020B2 (en) * 2003-05-06 2007-05-22 Ji-Mei Tsuei Light source device
US6995402B2 (en) * 2003-10-03 2006-02-07 Lumileds Lighting, U.S., Llc Integrated reflector cup for a light emitting device mount
KR100604602B1 (ko) 2004-05-19 2006-07-24 서울반도체 주식회사 발광 다이오드 렌즈 및 그것을 갖는 발광 다이오드
JP2006093672A (ja) * 2004-08-26 2006-04-06 Toshiba Corp 半導体発光装置
US7405433B2 (en) 2005-02-22 2008-07-29 Avago Technologies Ecbu Ip Pte Ltd Semiconductor light emitting device
JP4915052B2 (ja) * 2005-04-01 2012-04-11 パナソニック株式会社 Ｌｅｄ部品およびその製造方法
US20070200133A1 (en) * 2005-04-01 2007-08-30 Akira Hashimoto Led assembly and manufacturing method
US20080278954A1 (en) * 2005-04-05 2008-11-13 Tir Systems Ltd. Mounting Assembly for Optoelectronic Devices
KR100691174B1 (ko) 2005-05-24 2007-03-09 삼성전기주식회사 측면형 발광 다이오드 및 그 제조방법
US7105863B1 (en) 2005-06-03 2006-09-12 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light source with improved life
JP2007088155A (ja) * 2005-09-21 2007-04-05 Stanley Electric Co Ltd 表面実装型ｌｅｄ基板
JP2009515352A (ja) * 2005-11-09 2009-04-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 少なくとも１つのマイクロエレクトロニクス素子を密封するパッケージキャリアの製造方法及び診断素子の製造方法
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP4654942B2 (ja) * 2006-02-28 2011-03-23 ミネベア株式会社 面状照明装置
KR20080032882A (ko) * 2006-10-11 2008-04-16 삼성전기주식회사 발광 다이오드 패키지
US20080246397A1 (en) * 2007-04-04 2008-10-09 Bily Wang Manufacturing method of white light led and structure thereof
DE102007043401A1 (de) * 2007-09-12 2009-03-19 Osram Gesellschaft mit beschränkter Haftung Leuchtvorrichtung und Verfahren zur Herstellung derselben
TWI401820B (zh) * 2007-11-07 2013-07-11 財團法人工業技術研究院 發光元件及其製作方法
US8946987B2 (en) 2007-11-07 2015-02-03 Industrial Technology Research Institute Light emitting device and fabricating method thereof
GB2458345B (en) * 2008-03-12 2012-05-23 Dialight Lumidrives Ltd Method and apparatus for providing illumination
US8598602B2 (en) 2009-01-12 2013-12-03 Cree, Inc. Light emitting device packages with improved heat transfer
US7923739B2 (en) 2009-06-05 2011-04-12 Cree, Inc. Solid state lighting device
US8309973B2 (en) * 2009-02-12 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Silicon-based sub-mount for an opto-electronic device
US8860043B2 (en) * 2009-06-05 2014-10-14 Cree, Inc. Light emitting device packages, systems and methods
US9111778B2 (en) 2009-06-05 2015-08-18 Cree, Inc. Light emitting diode (LED) devices, systems, and methods
JP5612355B2 (ja) * 2009-07-15 2014-10-22 株式会社Ｋａｎｚａｃｃ メッキ構造及び電気材料の製造方法
US8101962B2 (en) * 2009-10-06 2012-01-24 Kuang Hong Precision Co., Ltd. Carrying structure of semiconductor
CN102237466B (zh) * 2010-04-28 2013-11-06 展晶科技(深圳)有限公司 发光组件封装结构及其制程
EP2390909A1 (en) * 2010-05-24 2011-11-30 Jerry Hu Miniature packaging for discrete circuit components
US8269244B2 (en) 2010-06-28 2012-09-18 Cree, Inc. LED package with efficient, isolated thermal path
US11101408B2 (en) 2011-02-07 2021-08-24 Creeled, Inc. Components and methods for light emitting diode (LED) lighting
TW201251140A (en) 2011-01-31 2012-12-16 Cree Inc High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion
JP2014063967A (ja) * 2012-09-24 2014-04-10 Towa Corp 発光デバイス及びその製造方法、並びに発光デバイス成形用金型
KR101912290B1 (ko) * 2017-12-06 2018-10-29 삼성전기 주식회사 팬-아웃 반도체 패키지

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (de) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg Opto-elektronisches bauelement
JPS61240687A (ja) * 1985-04-18 1986-10-25 Matsushita Electric Ind Co Ltd 発光素子
US5278429A (en) * 1989-12-19 1994-01-11 Fujitsu Limited Semiconductor device having improved adhesive structure and method of producing same
JPH04102378A (ja) * 1990-08-21 1992-04-03 Sanyo Electric Co Ltd 発光ダイオード装置の製造方法
US5221641A (en) * 1991-06-21 1993-06-22 Rohm Co., Ltd. Process for making light emitting diodes
DE4242842C2 (de) * 1992-02-14 1999-11-04 Sharp Kk Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung
JP2812614B2 (ja) * 1992-06-25 1998-10-22 ローム株式会社 発光ダイオード
JP3110182B2 (ja) * 1992-12-03 2000-11-20 ローム株式会社 発光ダイオードランプ
JP3227295B2 (ja) * 1993-12-28 2001-11-12 松下電工株式会社 発光ダイオードの製造方法
JPH07209764A (ja) * 1994-01-18 1995-08-11 Nikon Corp 光源装置
JP3137823B2 (ja) * 1994-02-25 2001-02-26 シャープ株式会社 チップ部品型ｌｅｄ及びその製造方法
KR100309623B1 (ko) * 1994-02-28 2002-04-24 사토 게니치로 발광다이오드램프및이를이용한매트릭스표시기
JP3579944B2 (ja) 1995-01-27 2004-10-20 ソニー株式会社 表示装置
JP2927202B2 (ja) * 1995-03-29 1999-07-28 日亜化学工業株式会社 Ｌｅｄランプ
DE19549818B4 (de) * 1995-09-29 2010-03-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiter-Bauelement
US5786626A (en) * 1996-03-25 1998-07-28 Ibm Corporation Thin radio frequency transponder with leadframe antenna structure
US6045240A (en) * 1996-06-27 2000-04-04 Relume Corporation LED lamp assembly with means to conduct heat away from the LEDS
US5777433A (en) * 1996-07-11 1998-07-07 Hewlett-Packard Company High refractive index package material and a light emitting device encapsulated with such material
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6054716A (en) * 1997-01-10 2000-04-25 Rohm Co., Ltd. Semiconductor light emitting device having a protecting device
KR100266071B1 (ko) * 1997-07-03 2000-09-15 윤종용 칩 온 보드 패키지용 인쇄회로기판 및 그를 이용한 칩 온 보드 패키지
JP3432113B2 (ja) * 1997-07-07 2003-08-04 シャープ株式会社 光半導体装置
JP3472450B2 (ja) * 1997-09-04 2003-12-02 シャープ株式会社 発光装置
TW414924B (en) * 1998-05-29 2000-12-11 Rohm Co Ltd Semiconductor device of resin package
DE19829197C2 (de) * 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP2000223751A (ja) * 1998-11-25 2000-08-11 Nichia Chem Ind Ltd Ｌｅｄランプ及びそれを用いた表示装置
JP2000183407A (ja) * 1998-12-16 2000-06-30 Rohm Co Ltd 光半導体装置
US6407411B1 (en) * 2000-04-13 2002-06-18 General Electric Company Led lead frame assembly

Also Published As

Publication number Publication date
EP1168461B1 (en) 2007-09-19
EP1168461A2 (en) 2002-01-02
US6806583B2 (en) 2004-10-19
JP2002064226A (ja) 2002-02-28
DE60130520T2 (de) 2008-06-26
US20020047130A1 (en) 2002-04-25
EP1168461A3 (en) 2003-01-22
DE60130520D1 (de) 2007-10-31

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