JP4924690B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 62
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 61
- 238000000034 method Methods 0.000 title claims description 57
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 107
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 239000010409 thin film Substances 0.000 claims description 44
- 238000002834 transmittance Methods 0.000 claims description 35
- 230000008569 process Effects 0.000 claims description 25
- 229910021332 silicide Inorganic materials 0.000 claims description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 13
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- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
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- 239000010408 film Substances 0.000 description 15
- 239000012535 impurity Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 238000000608 laser ablation Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
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- 238000010586 diagram Methods 0.000 description 4
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- 230000001681 protective effect Effects 0.000 description 4
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- 230000003213 activating effect Effects 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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Description
以下、本発明を図に示す実施形態について説明する。図1に、本実施形態に示すSiC半導体装置の製造方法により製造したプレーナ型MOSFET(縦型パワーMOSFET)の断面図を示す。本デバイスは、例えばインバータに適用すると好適なものである。図1に基づいて縦型パワーMOSFETの構造について説明する。
本発明の第2実施形態について説明する。本実施形態は、第1実施形態に対してシリサイド層111を形成するために用いるレーザ光を変更したものであり、その他に関しては第1実施形態と同様であるため、第1実施形態と異なる部分についてのみ説明する。
(1)上記各実施形態では、パワーMOSFETを例に挙げて説明したが、これは単なる一例であり、ダイオードやIGBTなどの他の素子構造を備えたものについても本発明を適用することが可能である。
1a 主表面
1b 裏面
10 ソース電極
11 ドレイン電極
12 イオンプラズマで表面処理された表面層
40 保護膜
50 レーザ光
110 金属薄膜
Claims (5)
- 主表面(1a)および当該主表面の反対面である裏面(1b)を有し、単結晶炭化珪素からなる半導体基板(1)と、該半導体装置の前記裏面に対して形成されたオーミック電極となる第1の電極(11)とを備えた炭化珪素半導体装置の製造方法であって、
前記半導体基板を用意し、当該半導体基板の裏面の表面粗度(Ra)が10nm以下であって、当該半導体基板の裏面に、照射するレーザ光の波長において(100%−反射率−透過率)が80%以上になる加工をイオンプラズマによって行う加工工程と、
前記加工工程の後、前記半導体基板の裏面上に金属薄膜(110)を形成する金属薄膜形成工程と、を含み、
前記金属薄膜形成工程の後、前記金属薄膜にレーザ光(50)を照射することでシリサイド化によるシリサイド層(111)を含む前記第1の電極(11)を形成することを特徴とする炭化珪素半導体装置の製造方法。 - 前記金属薄膜形成工程では、前記金属薄膜としてNi、Ti、Mo、W、Taのいずれか1つもしくは複数を含む金属を形成することを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記金属薄膜形成工程では、前記金属薄膜の膜厚を10nm以上とすることを特徴とする請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記電極形成工程では、スキャニングもしくはマスキングにより、前記半導体基板の裏面上の金属薄膜部分のみに前記レーザ光(50)を照射することを特徴とする請求項1ないし3のいずれか1つに記載の炭化珪素半導体装置の製造方法。
- 前記加工工程では、前記半導体基板として、前記半導体基板の主表面側に素子構造が形成されると共に、前記主表面に第2の電極(10)が形成され、かつ、前記裏面に前記第1の電極が形成されることで、前記第2の電極と前記第1の電極との間の前記素子構造に電流を流す縦型の半導体素子のうち、前記素子構造および前記第2の電極が形成されていて、前記裏面が表面粗度(Ra)が10nm以下とされているものを用意し、この半導体基板の裏面に、照射するレーザ光の波長において(100%−反射率−透過率)が80%以上になる加工を行うことを特徴とする請求項1ないし4のいずれか1つに記載の炭化珪素半導体装置の製造方法。
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JP2009241612A JP4924690B2 (ja) | 2009-10-20 | 2009-10-20 | 炭化珪素半導体装置の製造方法 |
US12/923,205 US8216929B2 (en) | 2009-10-20 | 2010-09-09 | Method of manufacturing silicon carbide semiconductor device |
DE102010042136.7A DE102010042136B4 (de) | 2009-10-20 | 2010-10-07 | Verfahren zur herstellung einer siliciumcarbidhalbleitervorrichtung und eine nach dem verfahren hergestellte halbleitervorrichtung |
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JP2009241612A JP4924690B2 (ja) | 2009-10-20 | 2009-10-20 | 炭化珪素半導体装置の製造方法 |
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JP2011091100A JP2011091100A (ja) | 2011-05-06 |
JP4924690B2 true JP4924690B2 (ja) | 2012-04-25 |
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JP2012004185A (ja) * | 2010-06-14 | 2012-01-05 | Denso Corp | 炭化珪素半導体装置の製造方法 |
JP5995435B2 (ja) | 2011-08-02 | 2016-09-21 | ローム株式会社 | 半導体装置およびその製造方法 |
JP5464192B2 (ja) * | 2011-09-29 | 2014-04-09 | 株式会社デンソー | 半導体装置の製造方法 |
JP5936042B2 (ja) * | 2012-03-22 | 2016-06-15 | アイシン精機株式会社 | 半導体装置及びその製造方法 |
US9105579B2 (en) * | 2012-07-18 | 2015-08-11 | Avogy, Inc. | GaN power device with solderable back metal |
JP5920275B2 (ja) * | 2013-04-08 | 2016-05-18 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP6189131B2 (ja) * | 2013-08-01 | 2017-08-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
WO2015122065A1 (ja) * | 2014-02-13 | 2015-08-20 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US9842738B2 (en) | 2014-04-09 | 2017-12-12 | Mitsubishi Electric Corporation | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
JP2016046449A (ja) * | 2014-08-26 | 2016-04-04 | 住友重機械工業株式会社 | 半導体素子の製造方法 |
JP6387855B2 (ja) * | 2015-02-24 | 2018-09-12 | 株式会社デンソー | 炭化珪素半導体装置の製造方法およびそれに用いるレーザ加工装置 |
EP3336879B1 (en) * | 2015-08-12 | 2020-03-25 | Shindengen Electric Manufacturing Co., Ltd. | Method of manufacturing silicon carbide semiconductor device |
JP6497301B2 (ja) * | 2015-11-17 | 2019-04-10 | 株式会社デンソー | 樹脂成形体の製造方法 |
JP2017183627A (ja) * | 2016-03-31 | 2017-10-05 | 株式会社Screenホールディングス | 基板処理方法及び基板処理装置 |
US10811494B2 (en) | 2017-11-07 | 2020-10-20 | Microsemi Corporation | Method and assembly for mitigating short channel effects in silicon carbide MOSFET devices |
US10665680B2 (en) | 2017-11-21 | 2020-05-26 | Microsemi Corporation | Method and assembly for ohmic contact in thinned silicon carbide devices |
JP7314758B2 (ja) * | 2019-10-11 | 2023-07-26 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
DE102019218725A1 (de) | 2019-12-03 | 2021-06-10 | Robert Bosch Gmbh | Verfahren zum Bilden eines elektrischen Kontakts und Verfahren zum Bilden einer Halbleitervorrichtung |
DE102021206965A1 (de) | 2021-07-02 | 2023-01-05 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen eines Siliziumkarbid-Halbleiterbauelements |
CN113957374B (zh) * | 2021-09-26 | 2022-10-25 | 西安交通大学 | 一种半导体与金属涂层的复合结构及其制备方法 |
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JPH08264468A (ja) * | 1994-09-12 | 1996-10-11 | Ion Kogaku Kenkyusho:Kk | 炭化ケイ素への不純物ドーピング方法および電極形成方法 |
CN1131548C (zh) | 1997-04-04 | 2003-12-17 | 松下电器产业株式会社 | 半导体装置 |
JP3184115B2 (ja) * | 1997-04-11 | 2001-07-09 | 松下電器産業株式会社 | オーミック電極形成方法 |
JP2000340520A (ja) * | 1999-05-26 | 2000-12-08 | Denso Corp | 半導体装置及びその製造方法 |
JP3820424B2 (ja) | 2001-03-27 | 2006-09-13 | 独立行政法人産業技術総合研究所 | 不純物イオン注入層の活性化法 |
JP2004158702A (ja) | 2002-11-07 | 2004-06-03 | C Tekku:Kk | 半導体装置製造方法 |
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JP4087368B2 (ja) * | 2004-09-21 | 2008-05-21 | 新電元工業株式会社 | SiC半導体装置の製造方法 |
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JP2008135611A (ja) * | 2006-11-29 | 2008-06-12 | Denso Corp | 半導体装置の製造方法 |
JP2008153442A (ja) * | 2006-12-18 | 2008-07-03 | Renesas Technology Corp | 半導体装置の製造方法 |
US20090000652A1 (en) * | 2007-06-26 | 2009-01-01 | Nextreme Thermal Solutions, Inc. | Thermoelectric Structures Including Bridging Thermoelectric Elements |
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US20110092063A1 (en) | 2011-04-21 |
JP2011091100A (ja) | 2011-05-06 |
DE102010042136A1 (de) | 2011-04-21 |
DE102010042136B4 (de) | 2018-06-28 |
US8216929B2 (en) | 2012-07-10 |
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