JP4922370B2 - 不揮発性半導体記憶装置、及びその製造方法 - Google Patents
不揮発性半導体記憶装置、及びその製造方法 Download PDFInfo
- Publication number
- JP4922370B2 JP4922370B2 JP2009206007A JP2009206007A JP4922370B2 JP 4922370 B2 JP4922370 B2 JP 4922370B2 JP 2009206007 A JP2009206007 A JP 2009206007A JP 2009206007 A JP2009206007 A JP 2009206007A JP 4922370 B2 JP4922370 B2 JP 4922370B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- region
- conductive layers
- memory
- columnar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 230000006870 function Effects 0.000 claims description 17
- 238000003860 storage Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011800 void material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 400
- 230000002093 peripheral effect Effects 0.000 description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 102100038712 Cap-specific mRNA (nucleoside-2'-O-)-methyltransferase 1 Human genes 0.000 description 7
- 101710203121 Cap-specific mRNA (nucleoside-2'-O-)-methyltransferase 1 Proteins 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101100292586 Caenorhabditis elegans mtr-4 gene Proteins 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78642—Vertical transistors
Description
先ず、図1及び図2を参照して、実施形態に係る不揮発性半導体記憶装置100の構成について説明する。図1は、本発明の実施形態に係る不揮発性半導体記憶装置100のブロック図であり、図2は、不揮発性半導体記憶装置100の概略斜視図である。
・L1=H1/tanθ1 …(数式2)
・L2=H2/tanθ2 …(数式3)
次に、図7A〜図16Bを参照して、実施形態に係る不揮発性半導体記憶装置100の製造方法について説明する。図7A〜図16Bは、実施形態に係る不揮発性半導体記憶装置100の製造工程を示す図である。
実施形態に係る不揮発性半導体記憶装置100の製造方法において、ワード線導電層41a〜41d及び、犠牲層72a〜72dは、共にアモルファスシリコンにて構成される。したがって、ワード線導電層41a〜41d及び犠牲層72a〜72dは、単一の堆積装置で連続して形成され、歩留まりを向上させることができる。
以上、不揮発性半導体記憶装置の一実施形態を説明してきたが、本発明は、上記の実施形態に限定されるものではなく、発明の趣旨を逸脱しない範囲内において種々の変更、追加、置換等が可能である。
Claims (5)
- 電気的に書き換え可能な複数のメモリセルを配置された第1領域、及び前記第1領域に隣接する第2領域を有する不揮発性半導体記憶装置であって、
前記第1領域及び前記第2領域に亘って積層され、且つ前記第1領域にて前記メモリセルの制御電極として機能し、前記第2領域にてその端部の位置が異なるように階段状に形成された階段部を有する複数の第1導電層と、
前記第1領域にて前記第1導電層に囲まれ、積層方向に延びる第1柱状部を含み、前記メモリセルのボディとして機能する半導体層と、
前記第1柱状部の側面と前記第1導電層との間に形成され、且つ電荷を蓄積し前記メモリセルのデータを保持するための電荷蓄積層と、
前記第2領域にて前記階段部を構成する前記第1導電層に囲まれ、積層方向に延びる絶縁体からなる第2柱状部を含む絶縁柱状層と
を備えることを特徴とする不揮発性半導体記憶装置。 - 前記半導体層は、前記積層方向に直交する第1方向に第1ピッチをもって配置され、
前記絶縁柱状層は、前記第1方向に前記第1ピッチよりも大きい第2ピッチをもって配置されている
ことを特徴とする請求項1記載の不揮発性半導体記憶装置。 - 複数の前記第1導電層と同層に形成され且つ前記階段部の各段の上部に位置する第2導電層と、
前記第1導電層から積層方向に延びるコンタクト層と、
を更に備え、
前記第2導電層は、前記絶縁柱状層の周囲に形成され且つその一部を前記第1導電層に接するように形成され、
前記コンタクト層は、前記第1導電層と接する前記第2導電層から離間して設けられている
ことを特徴とする請求項1又は請求項2記載の不揮発性半導体記憶装置。 - 前記第1導電層の周囲を囲むように形成された壁状絶縁層と、
前記壁状絶縁層を囲むように且つその一部を前記第1導電層に接するように形成された複数の第3導電層とを更に備え、
前記コンタクト層は、前記第3導電層から離間して設けられている
ことを特徴とする請求項3記載の不揮発性半導体記憶装置。 - 電気的に書き換え可能な複数のメモリセルを配置された第1領域、及び前記第1領域に隣接する第2領域を有する不揮発性半導体記憶装置の製造方法であって、
前記第1領域及び前記第2領域に亘って基板上に複数の導電層及び犠牲層を交互に積層させる工程と、
前記第1領域及び前記第2領域にて複数の前記導電層及び前記犠牲層を貫通するホールを形成する工程と、
前記第1領域及び前記第2領域にて前記ホールを埋めるように柱状の絶縁体からなる第1絶縁層を形成する工程と、
前記第1領域及び前記第2領域にて複数の前記導電層及び前記犠牲層を貫通する溝を形成する工程と、
前記第1領域及び前記第2領域にて前記溝を介して前記犠牲層を除去して、除去された前記犠牲層の位置に空隙を形成する工程と、
前記第1領域及び前記第2領域にて前記空隙及び前記溝を埋めるように第2絶縁層を形成する工程と、
前記第1領域にて前記第1絶縁層を除去し、前記第2領域にて前記第1絶縁層を残存させる工程と、
前記第1領域にて前記ホールに、電荷蓄積層及び半導体層を形成する工程と、
前記第2領域にて複数の前記導電層の端部の位置が異なるように複数の前記導電層を階段状に加工して、階段部を形成する工程と
を備えることを特徴とする不揮発性半導体記憶装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009206007A JP4922370B2 (ja) | 2009-09-07 | 2009-09-07 | 不揮発性半導体記憶装置、及びその製造方法 |
US12/875,766 US8426908B2 (en) | 2009-09-07 | 2010-09-03 | Nonvolatile semiconductor memory device and method of manufacturing the same |
KR1020100086409A KR101119875B1 (ko) | 2009-09-07 | 2010-09-03 | 불휘발성 반도체 기억 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009206007A JP4922370B2 (ja) | 2009-09-07 | 2009-09-07 | 不揮発性半導体記憶装置、及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011060838A JP2011060838A (ja) | 2011-03-24 |
JP4922370B2 true JP4922370B2 (ja) | 2012-04-25 |
Family
ID=43647040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009206007A Active JP4922370B2 (ja) | 2009-09-07 | 2009-09-07 | 不揮発性半導体記憶装置、及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8426908B2 (ja) |
JP (1) | JP4922370B2 (ja) |
KR (1) | KR101119875B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10910391B2 (en) | 2018-08-30 | 2021-02-02 | Toshiba Memory Corporation | Semiconductor memory device having a plurality of first semiconductor films |
US11145669B2 (en) | 2018-12-11 | 2021-10-12 | Samsung Electronics Co., Ltd. | Semiconductor devices including a contact structure that contacts a dummy channel structure |
US11862246B2 (en) | 2021-03-19 | 2024-01-02 | Kioxia Corporation | Memory system |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4982540B2 (ja) * | 2009-09-04 | 2012-07-25 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP2012059966A (ja) * | 2010-09-09 | 2012-03-22 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
KR101755635B1 (ko) * | 2010-10-14 | 2017-07-10 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8945996B2 (en) | 2011-04-12 | 2015-02-03 | Micron Technology, Inc. | Methods of forming circuitry components and methods of forming an array of memory cells |
JP5550604B2 (ja) * | 2011-06-15 | 2014-07-16 | 株式会社東芝 | 三次元半導体装置及びその製造方法 |
JP6140400B2 (ja) * | 2011-07-08 | 2017-05-31 | エスケーハイニックス株式会社SK hynix Inc. | 半導体装置及びその製造方法 |
KR101863367B1 (ko) * | 2011-08-26 | 2018-06-01 | 에스케이하이닉스 주식회사 | 3차원 불휘발성 메모리 소자의 제조방법 |
JP2013055142A (ja) * | 2011-09-01 | 2013-03-21 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8933502B2 (en) * | 2011-11-21 | 2015-01-13 | Sandisk Technologies Inc. | 3D non-volatile memory with metal silicide interconnect |
US8633055B2 (en) * | 2011-12-13 | 2014-01-21 | International Business Machines Corporation | Graphene field effect transistor |
KR101981996B1 (ko) | 2012-06-22 | 2019-05-27 | 에스케이하이닉스 주식회사 | 반도체 소자와 그 제조방법 |
US8633099B1 (en) * | 2012-07-19 | 2014-01-21 | Macronix International Co., Ltd. | Method for forming interlayer connectors in a three-dimensional stacked IC device |
KR101970941B1 (ko) * | 2012-08-20 | 2019-08-13 | 삼성전자 주식회사 | 3차원 비휘발성 메모리 장치 및 그 제조 방법 |
US9698153B2 (en) | 2013-03-12 | 2017-07-04 | Sandisk Technologies Llc | Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing pad |
US9449982B2 (en) | 2013-03-12 | 2016-09-20 | Sandisk Technologies Llc | Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacks |
US8946023B2 (en) | 2013-03-12 | 2015-02-03 | Sandisk Technologies Inc. | Method of making a vertical NAND device using sequential etching of multilayer stacks |
KR20140117212A (ko) * | 2013-03-26 | 2014-10-07 | 에스케이하이닉스 주식회사 | 반도체 장치 |
KR20140137632A (ko) | 2013-05-23 | 2014-12-03 | 에스케이하이닉스 주식회사 | 반도체 장치 |
KR20140148070A (ko) * | 2013-06-21 | 2014-12-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 제조 방법 |
KR20150061429A (ko) * | 2013-11-27 | 2015-06-04 | 삼성전자주식회사 | 수직형 메모리 장치 및 그 제조 방법 |
KR20160011095A (ko) | 2014-07-21 | 2016-01-29 | 에스케이하이닉스 주식회사 | 3차원 비휘발성 메모리 장치 |
KR102150251B1 (ko) | 2014-09-05 | 2020-09-02 | 삼성전자주식회사 | 반도체 장치 |
US9466667B2 (en) * | 2014-09-10 | 2016-10-11 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing same |
US9991276B2 (en) * | 2015-09-11 | 2018-06-05 | Toshiba Memory Corporation | Semiconductor device |
US9711527B2 (en) | 2015-09-11 | 2017-07-18 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
US9818753B2 (en) | 2015-10-20 | 2017-11-14 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing the same |
US9698150B2 (en) | 2015-10-26 | 2017-07-04 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method for manufacturing the same |
US9646989B1 (en) | 2015-11-18 | 2017-05-09 | Kabushiki Kaisha Toshiba | Three-dimensional memory device |
US9935124B2 (en) | 2015-11-25 | 2018-04-03 | Sandisk Technologies Llc | Split memory cells with unsplit select gates in a three-dimensional memory device |
US9741734B2 (en) * | 2015-12-15 | 2017-08-22 | Intel Corporation | Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
KR102546651B1 (ko) | 2015-12-17 | 2023-06-23 | 삼성전자주식회사 | 3차원 반도체 소자 |
TWI622131B (zh) | 2016-03-18 | 2018-04-21 | Toshiba Memory Corp | Semiconductor memory device and method of manufacturing same |
US10096613B2 (en) | 2016-04-13 | 2018-10-09 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
US9871054B2 (en) | 2016-04-15 | 2018-01-16 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
KR102613511B1 (ko) | 2016-06-09 | 2023-12-13 | 삼성전자주식회사 | 수직형 메모리 소자를 구비한 집적회로 소자 및 그 제조 방법 |
JP7046049B2 (ja) * | 2016-07-19 | 2022-04-01 | 東京エレクトロン株式会社 | 三次元半導体デバイス及び製造方法 |
US9793293B1 (en) | 2016-11-15 | 2017-10-17 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
US10056399B2 (en) | 2016-12-22 | 2018-08-21 | Sandisk Technologies Llc | Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same |
US9831256B1 (en) | 2017-01-13 | 2017-11-28 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
CN106876391B (zh) | 2017-03-07 | 2018-11-13 | 长江存储科技有限责任公司 | 一种沟槽版图结构、半导体器件及其制作方法 |
JP2018163966A (ja) * | 2017-03-24 | 2018-10-18 | 東芝メモリ株式会社 | 半導体記憶装置及びその製造方法 |
US20180331117A1 (en) | 2017-05-12 | 2018-11-15 | Sandisk Technologies Llc | Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof |
KR102344862B1 (ko) | 2017-05-17 | 2021-12-29 | 삼성전자주식회사 | 수직형 반도체 소자 |
KR102627897B1 (ko) | 2018-09-18 | 2024-01-23 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조방법 |
WO2020073262A1 (en) * | 2018-10-11 | 2020-04-16 | Yangtze Memory Technologies Co., Ltd. | Vertical memory devices |
KR20210091271A (ko) | 2018-12-07 | 2021-07-21 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 새로운 3d nand 메모리 소자 및 그 형성 방법 |
KR20210052928A (ko) | 2019-11-01 | 2021-05-11 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200746355A (en) * | 2005-07-12 | 2007-12-16 | St Microelectronics Crolles 2 | Integration control and reliability enhancement of interconnect air cavities |
JP5016832B2 (ja) | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP4768557B2 (ja) | 2006-09-15 | 2011-09-07 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP4334589B2 (ja) * | 2006-12-06 | 2009-09-30 | 株式会社東芝 | 半導体装置、およびその製造方法 |
JP5016928B2 (ja) * | 2007-01-10 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
KR101226685B1 (ko) * | 2007-11-08 | 2013-01-25 | 삼성전자주식회사 | 수직형 반도체 소자 및 그 제조 방법. |
JP2009135328A (ja) * | 2007-11-30 | 2009-06-18 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5142692B2 (ja) * | 2007-12-11 | 2013-02-13 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5388537B2 (ja) * | 2008-10-20 | 2014-01-15 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
JP5376976B2 (ja) * | 2009-02-06 | 2013-12-25 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP4982540B2 (ja) * | 2009-09-04 | 2012-07-25 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
KR20120003677A (ko) * | 2010-07-05 | 2012-01-11 | 삼성전자주식회사 | 반도체 장치 및 그의 형성 방법 |
-
2009
- 2009-09-07 JP JP2009206007A patent/JP4922370B2/ja active Active
-
2010
- 2010-09-03 KR KR1020100086409A patent/KR101119875B1/ko active IP Right Grant
- 2010-09-03 US US12/875,766 patent/US8426908B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10910391B2 (en) | 2018-08-30 | 2021-02-02 | Toshiba Memory Corporation | Semiconductor memory device having a plurality of first semiconductor films |
US11145669B2 (en) | 2018-12-11 | 2021-10-12 | Samsung Electronics Co., Ltd. | Semiconductor devices including a contact structure that contacts a dummy channel structure |
US11659713B2 (en) | 2018-12-11 | 2023-05-23 | Samsung Electronics Co., Ltd. | Semiconductor devices including a contact structure that contacts a dummy channel structure |
US11862246B2 (en) | 2021-03-19 | 2024-01-02 | Kioxia Corporation | Memory system |
Also Published As
Publication number | Publication date |
---|---|
JP2011060838A (ja) | 2011-03-24 |
KR20110026389A (ko) | 2011-03-15 |
US8426908B2 (en) | 2013-04-23 |
US20110057251A1 (en) | 2011-03-10 |
KR101119875B1 (ko) | 2012-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4922370B2 (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
JP4982540B2 (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
CN108461502B (zh) | 三维半导体存储器件 | |
US9865541B2 (en) | Memory device having cell over periphery structure and memory package including the same | |
JP5550604B2 (ja) | 三次元半導体装置及びその製造方法 | |
CN106571369B (zh) | 半导体装置和非易失性存储装置 | |
KR101076149B1 (ko) | 불휘발성 반도체 기억 장치 및 그 제조 방법 | |
KR101087423B1 (ko) | 불휘발성 반도체 기억 장치 | |
US8759162B2 (en) | Nonvolatile semiconductor memory device and method of manufacturing the same | |
JP5193551B2 (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
JP2010080561A (ja) | 不揮発性半導体記憶装置 | |
JP2011142276A (ja) | 不揮発性半導体記憶装置、及びその製造方法 | |
US20160268166A1 (en) | Semiconductor memory device and method of manufacturing the same | |
US9129860B2 (en) | Semiconductor device and manufacturing method thereof | |
US8957501B2 (en) | Non-volatile semiconductor storage device | |
JP2010114369A (ja) | 不揮発性半導体記憶装置 | |
CN109935594A (zh) | 3d存储器件及其制造方法 | |
CN109671715B (zh) | 3d存储器件及其制造方法 | |
US11825654B2 (en) | Memory device | |
US20210265386A1 (en) | Semiconductor storage device and manufacturing method thereof | |
KR102143519B1 (ko) | 후단 공정을 이용한 3차원 플래시 메모리 제조 방법 | |
KR102578439B1 (ko) | 플로팅 디바이스를 포함하는 3차원 플래시 메모리 및 그 제조 방법 | |
TWI824557B (zh) | 半導體記憶裝置 | |
US20220302023A1 (en) | Semiconductor device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110801 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111201 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111213 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120110 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120203 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4922370 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150210 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |