JP4921579B2 - インプリントテンプレートを形成する方法 - Google Patents
インプリントテンプレートを形成する方法 Download PDFInfo
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- JP4921579B2 JP4921579B2 JP2010211473A JP2010211473A JP4921579B2 JP 4921579 B2 JP4921579 B2 JP 4921579B2 JP 2010211473 A JP2010211473 A JP 2010211473A JP 2010211473 A JP2010211473 A JP 2010211473A JP 4921579 B2 JP4921579 B2 JP 4921579B2
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- JP
- Japan
- Prior art keywords
- release layer
- etching
- inorganic release
- imprintable medium
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 35
- 239000010410 layer Substances 0.000 claims description 77
- 238000005530 etching Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 14
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 4
- 239000005350 fused silica glass Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910008812 WSi Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 238000001459 lithography Methods 0.000 description 15
- 239000000499 gel Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000000059 patterning Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000005855 radiation Effects 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 230000009969 flowable effect Effects 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 3
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 229920001169 thermoplastic Polymers 0.000 description 3
- 229920005992 thermoplastic resin Polymers 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920005593 poly(benzyl methacrylate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002776 polycyclohexyl methacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Mechanical Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Description
Claims (5)
- 無機剥離層とインプリント可能な媒体の層とを有する基板を用いてインプリントテンプレートを形成する方法であって、
基板上に無機剥離層を配置するステップと、
前記無機剥離層上にハードマスクを配置するステップと、
前記ハードバスク上に接着層を配置するステップと、
前記接着層上に前記インプリント可能な媒体の層を配置するステップと、
マスタインプリントテンプレートを用いて前記インプリント可能な媒体にパターンをインプリントするステップと、
前記インプリント可能な媒体を固化させるステップと、
前記インプリント可能な媒体、前記接着層、前記ハードマスク、および前記無機剥離層をエッチングして前記無機剥離層内にパターンを形成するステップと、
を含む方法。 - 前記ハードマスクが、Cr、Mo、WSi、W、Al、Si又はTiのうちの1つから形成される、請求項1に記載の方法。
- 前記マスタインプリントテンプレートが、石英、溶融シリカ、ガラス、YAG又はCaF2から形成される、前記請求項1または2に記載の方法。
- 前記基板が、石英、溶融シリカ、ガラス、YAG又はCaF2から形成される、前記請求項1〜3のいずれか1項に記載の方法。
- 前記無機剥離層が、SiNx、AlNx、TiNx、TiOx、AlOx、TaOx、又はGaNxのうちの1つから形成される、前記請求項1〜4のいずれか1項に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24672509P | 2009-09-29 | 2009-09-29 | |
US61/246,725 | 2009-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011073444A JP2011073444A (ja) | 2011-04-14 |
JP4921579B2 true JP4921579B2 (ja) | 2012-04-25 |
Family
ID=43780656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010211473A Active JP4921579B2 (ja) | 2009-09-29 | 2010-09-22 | インプリントテンプレートを形成する方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9588422B2 (ja) |
JP (1) | JP4921579B2 (ja) |
CN (1) | CN102033424B (ja) |
NL (1) | NL2005263A (ja) |
Families Citing this family (5)
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KR101775163B1 (ko) * | 2011-07-28 | 2017-09-05 | 엘지이노텍 주식회사 | 나노 임프린트용 몰드 제조방법 및 이를 이용하여 제조된 나노 임프린트용 몰드 |
WO2013051735A1 (en) * | 2011-10-07 | 2013-04-11 | Fujifilm Corporation | Underlay film composition for imprints and method of forming pattern and pattern formation method using the same |
JP5767615B2 (ja) * | 2011-10-07 | 2015-08-19 | 富士フイルム株式会社 | インプリント用下層膜組成物およびこれを用いたパターン形成方法 |
CN102508409B (zh) * | 2011-10-27 | 2014-03-19 | 无锡英普林纳米科技有限公司 | 一种紫外光辅助热固化纳米压印技术与材料 |
JP5874110B2 (ja) * | 2011-12-20 | 2016-03-02 | 公立大学法人大阪市立大学 | パターン形成方法、モールドの回復方法、およびレプリカモールドの製造方法 |
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-
2010
- 2010-08-25 NL NL2005263A patent/NL2005263A/en not_active Application Discontinuation
- 2010-09-22 JP JP2010211473A patent/JP4921579B2/ja active Active
- 2010-09-26 CN CN2010102936817A patent/CN102033424B/zh active Active
- 2010-09-27 US US12/891,397 patent/US9588422B2/en active Active
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US9588422B2 (en) | 2017-03-07 |
NL2005263A (en) | 2011-03-30 |
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JP2011073444A (ja) | 2011-04-14 |
US20110076351A1 (en) | 2011-03-31 |
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