JP4625042B2 - インプリントリソグラフィ - Google Patents
インプリントリソグラフィ Download PDFInfo
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- JP4625042B2 JP4625042B2 JP2007075810A JP2007075810A JP4625042B2 JP 4625042 B2 JP4625042 B2 JP 4625042B2 JP 2007075810 A JP2007075810 A JP 2007075810A JP 2007075810 A JP2007075810 A JP 2007075810A JP 4625042 B2 JP4625042 B2 JP 4625042B2
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- 239000000758 substrate Substances 0.000 claims description 71
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- 238000004544 sputter deposition Methods 0.000 claims description 3
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- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- WUKHWLIEBSRTRH-UHFFFAOYSA-N 2-(2,2,3,3,4,4,5,5,5-nonafluoropentyl)oxirane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 WUKHWLIEBSRTRH-UHFFFAOYSA-N 0.000 description 1
- KGYUZRBIQCDOCN-UHFFFAOYSA-N 2-(2,2,3,3,4,4,5,5,6,6,7,7,7-tridecafluoroheptyl)oxirane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC1CO1 KGYUZRBIQCDOCN-UHFFFAOYSA-N 0.000 description 1
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- KBQVDAIIQCXKPI-UHFFFAOYSA-N 3-trimethoxysilylpropyl prop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C=C KBQVDAIIQCXKPI-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
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- MWGMEGAYPPQWFG-UHFFFAOYSA-N [SiH4].OC(=O)C=C Chemical class [SiH4].OC(=O)C=C MWGMEGAYPPQWFG-UHFFFAOYSA-N 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 230000001617 migratory effect Effects 0.000 description 1
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- 238000000465 moulding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920005593 poly(benzyl methacrylate) Polymers 0.000 description 1
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- 229920002554 vinyl polymer Polymers 0.000 description 1
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Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Manufacturing & Machinery (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Description
第1パターンの窪みを第1材料で充填し、
第1インプリントテンプレートから第1材料を除去して、第1パターンとは実質的に逆である第2パターンを有する第2インプリントテンプレートを形成し、
第2パターンの窪みを光硬化性媒体で充填し、
放射で照明することによって光硬化性媒体を硬化し、
第2インプリントテンプレートから硬化した媒体を除去して、第1パターンの実質的なレプリカであるパターンを有する第3インプリントテンプレートを形成する、
ことを含む方法が提供される。
基板の少なくとも一部をネガ型レジストで覆い、
電子ビームリソグラフィ装置を使用してネガ型レジストをパターン化し、
レジストを現像、エッチングして、所望のパターンとは逆であるパターンを有する第1インプリントテンプレートを形成し、
パターンの窪みを光硬化性媒体で充填し、
光硬化性媒体を放射で照明し、
第1インプリントテンプレートから硬化した媒体を除去して、所望のパターンを実質的に有する第2インプリントテンプレートを提供する、
ことを含む方法が提供される。
Claims (11)
- 第1パターンを有する第1インプリントテンプレートの実質的なレプリカを作成する方法であって、
前記第1パターンの窪みを、1つまたは複数の金属である第1材料で充填し、
前記第1インプリントテンプレートから前記第1材料を除去して、前記第1パターンとは実質的に逆である第2パターンを有する第2インプリントテンプレートを形成し、
前記第2パターンの窪みを光硬化性媒体で充填し、
放射で照明することによって前記光硬化性媒体を硬化し、
前記第2インプリントテンプレートから前記硬化した媒体を除去して、前記第1パターンの実質的なレプリカであるパターンを有する第3インプリントテンプレートを形成する、
ことを含む方法。 - 前記金属がニッケルである、請求項1に記載の方法。
- 前記1つまたは複数の金属が、化学蒸着またはスパッタリングを使用して前記窪みに適用される、請求項1に記載の方法。
- 前記化学蒸着またはスパッタリングの後に、電気メッキを使用して1つまたは複数の金属を適用する、請求項3に記載の方法。
- さらに、前記媒体を照明する前に、前記第2パターンを充填する前記光硬化性媒体に基板の表面を接触させることを含み、前記光硬化性媒体の硬化によって前記基板が前記光硬化性媒体に接着される、請求項1に記載の方法。
- 前記基板が、前記光硬化性媒体への前記基板の接着を補助する窪みアレイを備える、請求項5に記載の方法。
- 前記基板が、前記光硬化性媒体への前記基板の接着を補助するプライマ層を備える、請求項5に記載の方法。
- 前記光硬化性媒体が、前記基板のそれと実質的に一致する屈折率を有するように選択される、請求項5に記載の方法。
- 前記第2インプリントテンプレートが、前記第2インプリントテンプレートから前記硬化した媒体を除去することを補助する剥離層を備える、請求項1に記載の方法。
- 前記光硬化性媒体が、剥離層特性を提供する1つまたは複数の物質を含む、請求項1に記載の方法。
- さらに、前記第2パターンの窪みを光硬化性媒体で再び充填し、放射で照明することによって前記光硬化性媒体を硬化し、前記第2インプリントテンプレートから前記硬化した媒体を除去して、前記第1パターンの実質的なレプリカであるパターンを有する第4インプリントテンプレートを形成することを含む、請求項1に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/392,950 US7862756B2 (en) | 2006-03-30 | 2006-03-30 | Imprint lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007313880A JP2007313880A (ja) | 2007-12-06 |
JP4625042B2 true JP4625042B2 (ja) | 2011-02-02 |
Family
ID=38575708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007075810A Active JP4625042B2 (ja) | 2006-03-30 | 2007-03-23 | インプリントリソグラフィ |
Country Status (2)
Country | Link |
---|---|
US (1) | US7862756B2 (ja) |
JP (1) | JP4625042B2 (ja) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
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US7791290B2 (en) | 2005-09-30 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Ultra-small resonating charged particle beam modulator |
US7586097B2 (en) | 2006-01-05 | 2009-09-08 | Virgin Islands Microsystems, Inc. | Switching micro-resonant structures using at least one director |
US7626179B2 (en) | 2005-09-30 | 2009-12-01 | Virgin Island Microsystems, Inc. | Electron beam induced resonance |
EP2485052B1 (en) * | 2005-09-13 | 2015-05-06 | Affymetrix, Inc. | Encoded microparticles |
US7443358B2 (en) | 2006-02-28 | 2008-10-28 | Virgin Island Microsystems, Inc. | Integrated filter in antenna-based detector |
US7876793B2 (en) | 2006-04-26 | 2011-01-25 | Virgin Islands Microsystems, Inc. | Micro free electron laser (FEL) |
US7646991B2 (en) | 2006-04-26 | 2010-01-12 | Virgin Island Microsystems, Inc. | Selectable frequency EMR emitter |
US7710040B2 (en) | 2006-05-05 | 2010-05-04 | Virgin Islands Microsystems, Inc. | Single layer construction for ultra small devices |
US7986113B2 (en) | 2006-05-05 | 2011-07-26 | Virgin Islands Microsystems, Inc. | Selectable frequency light emitter |
US7723698B2 (en) | 2006-05-05 | 2010-05-25 | Virgin Islands Microsystems, Inc. | Top metal layer shield for ultra-small resonant structures |
US8188431B2 (en) | 2006-05-05 | 2012-05-29 | Jonathan Gorrell | Integration of vacuum microelectronic device with integrated circuit |
US7656094B2 (en) * | 2006-05-05 | 2010-02-02 | Virgin Islands Microsystems, Inc. | Electron accelerator for ultra-small resonant structures |
US7732786B2 (en) | 2006-05-05 | 2010-06-08 | Virgin Islands Microsystems, Inc. | Coupling energy in a plasmon wave to an electron beam |
US7741934B2 (en) | 2006-05-05 | 2010-06-22 | Virgin Islands Microsystems, Inc. | Coupling a signal through a window |
US7746532B2 (en) | 2006-05-05 | 2010-06-29 | Virgin Island Microsystems, Inc. | Electro-optical switching system and method |
US7718977B2 (en) | 2006-05-05 | 2010-05-18 | Virgin Island Microsystems, Inc. | Stray charged particle removal device |
US7728702B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Shielding of integrated circuit package with high-permeability magnetic material |
US7728397B2 (en) | 2006-05-05 | 2010-06-01 | Virgin Islands Microsystems, Inc. | Coupled nano-resonating energy emitting structures |
US7998651B2 (en) | 2006-05-15 | 2011-08-16 | Asml Netherlands B.V. | Imprint lithography |
US7679067B2 (en) | 2006-05-26 | 2010-03-16 | Virgin Island Microsystems, Inc. | Receiver array using shared electron beam |
US7655934B2 (en) | 2006-06-28 | 2010-02-02 | Virgin Island Microsystems, Inc. | Data on light bulb |
US8003537B2 (en) * | 2006-07-18 | 2011-08-23 | Imec | Method for the production of planar structures |
US7659513B2 (en) * | 2006-12-20 | 2010-02-09 | Virgin Islands Microsystems, Inc. | Low terahertz source and detector |
JP5503115B2 (ja) * | 2008-05-20 | 2014-05-28 | Aji株式会社 | 造形物の製造方法及び造形物製造システム |
US7990336B2 (en) | 2007-06-19 | 2011-08-02 | Virgin Islands Microsystems, Inc. | Microwave coupled excitation of solid state resonant arrays |
US7791053B2 (en) * | 2007-10-10 | 2010-09-07 | Virgin Islands Microsystems, Inc. | Depressed anode with plasmon-enabled devices such as ultra-small resonant structures |
US20090212012A1 (en) * | 2008-02-27 | 2009-08-27 | Molecular Imprints, Inc. | Critical dimension control during template formation |
TW201022017A (en) * | 2008-09-30 | 2010-06-16 | Molecular Imprints Inc | Particle mitigation for imprint lithography |
US8262975B2 (en) * | 2008-11-11 | 2012-09-11 | HGST Netherlands B.V | Self-releasing resist material for nano-imprint processes |
SG162633A1 (en) * | 2008-12-22 | 2010-07-29 | Helios Applied Systems Pte Ltd | Integrated system for manufacture of sub-micron 3d structures using 2-d photon lithography and nanoimprinting and process thereof |
JP2010182824A (ja) * | 2009-02-04 | 2010-08-19 | Toshiba Corp | 磁気ランダムアクセスメモリの製造方法及び混載メモリの製造方法 |
JP5395756B2 (ja) * | 2010-07-07 | 2014-01-22 | 株式会社東芝 | インプリント用テンプレートの製造方法及びパターン形成方法 |
CN104170057A (zh) * | 2012-04-09 | 2014-11-26 | 旭硝子株式会社 | 表面具有微细图案的物品的制造方法 |
JP6113990B2 (ja) * | 2012-10-01 | 2017-04-12 | 株式会社クラレ | 微細構造体の製造方法 |
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JP2015103568A (ja) * | 2013-11-21 | 2015-06-04 | 株式会社ディスコ | 被加工物のエッチング方法 |
CN107119259B (zh) * | 2017-05-18 | 2019-12-24 | 苏州光舵微纳科技股份有限公司 | 一种用于压印模板的真空沉积装置 |
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WO2006131153A1 (en) * | 2005-06-10 | 2006-12-14 | Obducat Ab | Pattern replication with intermediate stamp |
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