JP4887271B2 - 低ストリエーション極紫外光光学素子 - Google Patents
低ストリエーション極紫外光光学素子 Download PDFInfo
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- JP4887271B2 JP4887271B2 JP2007334048A JP2007334048A JP4887271B2 JP 4887271 B2 JP4887271 B2 JP 4887271B2 JP 2007334048 A JP2007334048 A JP 2007334048A JP 2007334048 A JP2007334048 A JP 2007334048A JP 4887271 B2 JP4887271 B2 JP 4887271B2
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- Prior art keywords
- titania
- striation
- extreme ultraviolet
- glass
- furnace
- Prior art date
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- Expired - Lifetime
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- 230000003287 optical effect Effects 0.000 title description 24
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 71
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 28
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 239000004071 soot Substances 0.000 claims description 14
- 229910052719 titanium Inorganic materials 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 238000001459 lithography Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000000356 contaminant Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 description 33
- 239000000843 powder Substances 0.000 description 8
- 230000007062 hydrolysis Effects 0.000 description 7
- 238000006460 hydrolysis reaction Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- 229910052845 zircon Inorganic materials 0.000 description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1446—Means for after-treatment or catching of worked reactant gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1484—Means for supporting, rotating or translating the article being formed
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/0085—Compositions for glass with special properties for UV-transmitting glass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2201/00—Type of glass produced
- C03B2201/06—Doped silica-based glasses
- C03B2201/30—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi
- C03B2201/40—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03B2201/42—Doped silica-based glasses doped with metals, e.g. Ga, Sn, Sb, Pb or Bi doped with transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn doped with titanium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/60—Relationship between burner and deposit, e.g. position
- C03B2207/62—Distance
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B2207/00—Glass deposition burners
- C03B2207/60—Relationship between burner and deposit, e.g. position
- C03B2207/66—Relative motion
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2203/00—Production processes
- C03C2203/40—Gas-phase processes
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geochemistry & Mineralogy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Theoretical Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Health & Medical Sciences (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Glass Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Glass Melting And Manufacturing (AREA)
- Optical Elements Other Than Lenses (AREA)
Description
11 チタニア含有シリカスート
12 カップ
14 高純度ケイ素含有供給原料
16 炉
18 チタニア−シリカガラス体
20 不活性バブラーガス
22 不活性キャリアガス
24 分配器
26 高純度チタン含有供給原料
28 マニホールド
36 バーナー
37 バーナー炎
Claims (2)
- 極紫外光リソグラフィ用素子の製造方法において、
(i)ケイ素含有供給原料及びチタン含有供給原料を提供する工程、
(ii)前記ケイ素含有供給原料及び前記チタン含有供給原料を転化サイトの炉に配送する工程であって、前記炉が6つより多くの排気ベントをもつものであり、
(iii)前記ケイ素含有供給原料及び前記チタン含有供給原料をチタニア含有シリカスートに転化する工程、
(iv)前記チタニア含有シリカスートを固結して、混在物のない、均質なチタニア含有シリカガラスプリフォームにする工程、及び
(v)前記チタニア含有シリカガラスプリフォームを、0.2MPaより小さい山対谷ストリエーションレベルを有する極紫外光リソグラフィ用素子に仕上げる工程を含み、
前記プリフォームとバーナーとの間の距離を増加させて前記ストリエーションレベルを修正すること、および、前記スートを振動台上に載せられたカップ内に堆積し、前記振動台の回転速度を6rpmより高めることにより、前記ストリエーションレベルを低減することを特徴とする方法。 - 前記方法が前記製造のプロセス中に前記排気ベントの流量を増加させることにより前記ストリエーションレベルを維持する工程を含むことを特徴とする請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36205202P | 2002-03-05 | 2002-03-05 | |
US60/362,052 | 2002-03-05 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003575191A Division JP2005519349A (ja) | 2002-03-05 | 2003-03-04 | 低ストリエーション極紫外光光学素子 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011205771A Division JP2012042966A (ja) | 2002-03-05 | 2011-09-21 | 低ストリエーション極紫外光光学素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008182220A JP2008182220A (ja) | 2008-08-07 |
JP4887271B2 true JP4887271B2 (ja) | 2012-02-29 |
Family
ID=27805120
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003575191A Pending JP2005519349A (ja) | 2002-03-05 | 2003-03-04 | 低ストリエーション極紫外光光学素子 |
JP2007334048A Expired - Lifetime JP4887271B2 (ja) | 2002-03-05 | 2007-12-26 | 低ストリエーション極紫外光光学素子 |
JP2011205771A Pending JP2012042966A (ja) | 2002-03-05 | 2011-09-21 | 低ストリエーション極紫外光光学素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003575191A Pending JP2005519349A (ja) | 2002-03-05 | 2003-03-04 | 低ストリエーション極紫外光光学素子 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011205771A Pending JP2012042966A (ja) | 2002-03-05 | 2011-09-21 | 低ストリエーション極紫外光光学素子 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7053017B2 (ja) |
EP (2) | EP1481288B1 (ja) |
JP (3) | JP2005519349A (ja) |
KR (1) | KR101190914B1 (ja) |
AU (1) | AU2003220982A1 (ja) |
DE (1) | DE60332429D1 (ja) |
TW (1) | TWI247196B (ja) |
WO (1) | WO2003077038A2 (ja) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7053017B2 (en) * | 2002-03-05 | 2006-05-30 | Corning Incorporated | Reduced striae extreme ultraviolet elements |
JP4792706B2 (ja) * | 2003-04-03 | 2011-10-12 | 旭硝子株式会社 | TiO2を含有するシリカガラスおよびその製造方法 |
JP5367204B2 (ja) * | 2003-04-03 | 2013-12-11 | 旭硝子株式会社 | TiO2を含有するシリカガラスおよびEUVリソグラフィ用光学部材 |
EP1471038A3 (de) * | 2003-04-26 | 2005-11-23 | Schott Ag | Verfahren zur Herstellung von Glaskörpern aus dotiertem Quarzglas |
US7155936B2 (en) | 2003-08-08 | 2007-01-02 | Corning Incorporated | Doped silica glass articles and methods of forming doped silica glass boules and articles |
DE10359102A1 (de) | 2003-12-17 | 2005-07-21 | Carl Zeiss Smt Ag | Optische Komponente umfassend ein Material mit einer vorbestimmten Homogenität der thermischen Längsausdehnung |
JP4492123B2 (ja) * | 2004-01-05 | 2010-06-30 | 旭硝子株式会社 | シリカガラス |
JP4537087B2 (ja) * | 2004-02-12 | 2010-09-01 | キヤノン株式会社 | 露光装置、デバイスの製造方法 |
DE102004015766B4 (de) * | 2004-03-23 | 2016-05-12 | Asahi Glass Co., Ltd. | Verwendung eines SiO2-TiO2-Glases als strahlungsresistentes Substrat |
DE102004024808B4 (de) * | 2004-05-17 | 2006-11-09 | Heraeus Quarzglas Gmbh & Co. Kg | Quarzglasrohling für ein optisches Bauteil zur Übertragung extrem kurzwelliger ultravioletter Strahlung |
JP4487783B2 (ja) * | 2005-01-25 | 2010-06-23 | 旭硝子株式会社 | TiO2を含有するシリカガラスの製造方法およびTiO2を含有するシリカガラスを用いたEUVリソグラフィ用光学部材 |
JP4781003B2 (ja) * | 2005-04-28 | 2011-09-28 | 信越石英株式会社 | ナノインプリントスタンパー用シリカ・チタニアガラス |
JP5035516B2 (ja) | 2005-12-08 | 2012-09-26 | 信越化学工業株式会社 | フォトマスク用チタニアドープ石英ガラスの製造方法 |
US20070137252A1 (en) * | 2005-12-21 | 2007-06-21 | Maxon John E | Reduced striae low expansion glass and elements, and a method for making same |
US20100154474A1 (en) * | 2005-12-21 | 2010-06-24 | Lorrie Foley Beall | Reduced striae low expansion glass and elements, and a method for making same |
US20070137253A1 (en) * | 2005-12-21 | 2007-06-21 | Beall Lorrie F | Reduced striae low expansion glass and elements, and a method for making same |
US20070263281A1 (en) * | 2005-12-21 | 2007-11-15 | Maxon John E | Reduced striae low expansion glass and elements, and a method for making same |
JP2009013048A (ja) | 2007-06-06 | 2009-01-22 | Shin Etsu Chem Co Ltd | ナノインプリントモールド用チタニアドープ石英ガラス |
JP5042714B2 (ja) * | 2007-06-06 | 2012-10-03 | 信越化学工業株式会社 | ナノインプリントモールド用チタニアドープ石英ガラス |
KR20100116639A (ko) | 2008-02-26 | 2010-11-01 | 아사히 가라스 가부시키가이샤 | TiO₂ 함유 실리카 유리, 고에너지 밀도를 사용한 EUV 리소그래피용 광학 부재 및 특수 온도 제어된 TiO₂ 함유 실리카 유리의 제조 방법 |
CN101959818A (zh) * | 2008-02-29 | 2011-01-26 | 旭硝子株式会社 | 含TiO2 的石英玻璃和使用该石英玻璃的光刻用光学部件 |
CN101978468B (zh) | 2008-03-18 | 2013-03-20 | 旭硝子株式会社 | Euv光刻用反射型掩模基板及其制造方法 |
JP2010135732A (ja) | 2008-08-01 | 2010-06-17 | Asahi Glass Co Ltd | Euvマスクブランクス用基板 |
CN102421713A (zh) | 2009-05-13 | 2012-04-18 | 旭硝子株式会社 | TiO2-SiO2玻璃体的制造方法及热处理方法、TiO2-SiO2玻璃体、EUVL用光学基材 |
JPWO2010134449A1 (ja) | 2009-05-18 | 2012-11-12 | 旭硝子株式会社 | TiO2−SiO2ガラス体の製造方法及び熱処理方法、TiO2−SiO2ガラス体、EUVL用光学基材 |
US8328417B2 (en) * | 2009-08-20 | 2012-12-11 | Corning Incorporated | Photoelastic method for absolute determination of zero CTE crossover in low expansion silica-titania glass samples |
US8713969B2 (en) * | 2009-08-31 | 2014-05-06 | Corning Incorporated | Tuning Tzc by the annealing of ultra low expansion glass |
DE102009043680A1 (de) | 2009-09-30 | 2011-03-31 | Heraeus Quarzglas Gmbh & Co. Kg | Rohling aus Titan-dotiertem, hochkieselsäurehaltigem Glas für ein Spiegelsubstrat für den Einsatz in der EUV-Lithographie und Verfahren für seine Herstellung |
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Also Published As
Publication number | Publication date |
---|---|
EP1481288B1 (en) | 2010-05-05 |
US20040027555A1 (en) | 2004-02-12 |
US7053017B2 (en) | 2006-05-30 |
WO2003077038A3 (en) | 2004-03-18 |
JP2012042966A (ja) | 2012-03-01 |
DE60332429D1 (de) | 2010-06-17 |
EP2211232A1 (en) | 2010-07-28 |
TW200417822A (en) | 2004-09-16 |
AU2003220982A8 (en) | 2003-09-22 |
EP1481288A2 (en) | 2004-12-01 |
US20050241338A1 (en) | 2005-11-03 |
KR101190914B1 (ko) | 2012-10-12 |
EP2211232B1 (en) | 2015-09-02 |
AU2003220982A1 (en) | 2003-09-22 |
WO2003077038A2 (en) | 2003-09-18 |
USRE40586E1 (en) | 2008-11-25 |
KR20040089703A (ko) | 2004-10-21 |
JP2005519349A (ja) | 2005-06-30 |
JP2008182220A (ja) | 2008-08-07 |
TWI247196B (en) | 2006-01-11 |
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