JP4886513B2 - フィーチャ微小寸法の低減 - Google Patents

フィーチャ微小寸法の低減 Download PDF

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Publication number
JP4886513B2
JP4886513B2 JP2006524669A JP2006524669A JP4886513B2 JP 4886513 B2 JP4886513 B2 JP 4886513B2 JP 2006524669 A JP2006524669 A JP 2006524669A JP 2006524669 A JP2006524669 A JP 2006524669A JP 4886513 B2 JP4886513 B2 JP 4886513B2
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Japan
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deposition
gas
layer
photoresist
forming
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JP2006524669A
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Japanese (ja)
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JP2007503720A (ja
JP2007503720A5 (enExample
Inventor
カン・ショーン・エス．
リー・サンゲオン
チェン・ワン−リン
ハドソン・エリック・エー．
サジャディ・エス．・エム．・レザ
ザオ・ガン・ミン
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Lam Research Corp
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Lam Research Corp
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    • H10P50/00—
    • H10P50/283—
    • H10P50/73—
    • H10W20/081—
    • H10W20/089—
    • H10P76/4085—

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  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006524669A 2003-08-26 2004-07-29 フィーチャ微小寸法の低減 Expired - Fee Related JP4886513B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/648,953 US7250371B2 (en) 2003-08-26 2003-08-26 Reduction of feature critical dimensions
US10/648,953 2003-08-26
PCT/US2004/024853 WO2005024904A2 (en) 2003-08-26 2004-07-29 Reduction of feature critical dimensions

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011228441A Division JP2012019242A (ja) 2003-08-26 2011-10-18 フィーチャ微小寸法の低減

Publications (3)

Publication Number Publication Date
JP2007503720A JP2007503720A (ja) 2007-02-22
JP2007503720A5 JP2007503720A5 (enExample) 2008-02-14
JP4886513B2 true JP4886513B2 (ja) 2012-02-29

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JP2006524669A Expired - Fee Related JP4886513B2 (ja) 2003-08-26 2004-07-29 フィーチャ微小寸法の低減
JP2011228441A Withdrawn JP2012019242A (ja) 2003-08-26 2011-10-18 フィーチャ微小寸法の低減

Family Applications After (1)

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JP2011228441A Withdrawn JP2012019242A (ja) 2003-08-26 2011-10-18 フィーチャ微小寸法の低減

Country Status (7)

Country Link
US (2) US7250371B2 (enExample)
JP (2) JP4886513B2 (enExample)
KR (1) KR101083622B1 (enExample)
CN (1) CN1922722B (enExample)
SG (1) SG149047A1 (enExample)
TW (1) TWI357094B (enExample)
WO (1) WO2005024904A2 (enExample)

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US7271107B2 (en) * 2005-02-03 2007-09-18 Lam Research Corporation Reduction of feature critical dimensions using multiple masks
US7491647B2 (en) * 2005-03-08 2009-02-17 Lam Research Corporation Etch with striation control
US7539969B2 (en) * 2005-05-10 2009-05-26 Lam Research Corporation Computer readable mask shrink control processor
US7465525B2 (en) * 2005-05-10 2008-12-16 Lam Research Corporation Reticle alignment and overlay for multiple reticle process
US7695632B2 (en) * 2005-05-31 2010-04-13 Lam Research Corporation Critical dimension reduction and roughness control
US7271108B2 (en) * 2005-06-28 2007-09-18 Lam Research Corporation Multiple mask process with etch mask stack
US7427458B2 (en) * 2005-06-30 2008-09-23 Lam Research Corporation System and method for critical dimension reduction and pitch reduction
US8529728B2 (en) * 2005-06-30 2013-09-10 Lam Research Corporation System and method for critical dimension reduction and pitch reduction
US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness
US7682516B2 (en) * 2005-10-05 2010-03-23 Lam Research Corporation Vertical profile fixing
US20070181530A1 (en) * 2006-02-08 2007-08-09 Lam Research Corporation Reducing line edge roughness
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US7429533B2 (en) * 2006-05-10 2008-09-30 Lam Research Corporation Pitch reduction
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CN101996937A (zh) * 2009-08-17 2011-03-30 上海宏力半导体制造有限公司 接触孔形成方法
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US8304262B2 (en) * 2011-02-17 2012-11-06 Lam Research Corporation Wiggling control for pseudo-hardmask
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US8450212B2 (en) 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
JP6050944B2 (ja) * 2012-04-05 2016-12-21 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマ処理装置
US9252183B2 (en) 2013-01-16 2016-02-02 Canon Kabushiki Kaisha Solid state image pickup apparatus and method for manufacturing the same
US8883648B1 (en) * 2013-09-09 2014-11-11 United Microelectronics Corp. Manufacturing method of semiconductor structure
CN104465386A (zh) * 2013-09-24 2015-03-25 中芯国际集成电路制造(北京)有限公司 半导体结构的形成方法
GB201322931D0 (en) 2013-12-23 2014-02-12 Spts Technologies Ltd Method of etching
JP6289996B2 (ja) * 2014-05-14 2018-03-07 東京エレクトロン株式会社 被エッチング層をエッチングする方法
US9543165B2 (en) * 2015-02-13 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating semiconductor device
CN106154743B (zh) * 2015-03-24 2019-11-01 中芯国际集成电路制造(上海)有限公司 掩模及其形成方法
US9543203B1 (en) 2015-07-02 2017-01-10 United Microelectronics Corp. Method of fabricating a semiconductor structure with a self-aligned contact
US9543148B1 (en) 2015-09-01 2017-01-10 Lam Research Corporation Mask shrink layer for high aspect ratio dielectric etch
US20190035673A1 (en) * 2016-03-31 2019-01-31 Intel Corporation Flowable dielectrics from vapor phase precursors
CA3043489A1 (en) 2016-11-21 2018-05-24 Nanostring Technologies, Inc. Chemical compositions and methods of using same
US10276398B2 (en) 2017-08-02 2019-04-30 Lam Research Corporation High aspect ratio selective lateral etch using cyclic passivation and etching
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
US10734238B2 (en) 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
US10658174B2 (en) 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
US10515815B2 (en) 2017-11-21 2019-12-24 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formation
US10446394B2 (en) 2018-01-26 2019-10-15 Lam Research Corporation Spacer profile control using atomic layer deposition in a multiple patterning process
CN108470678A (zh) * 2018-03-29 2018-08-31 德淮半导体有限公司 半导体结构及其形成方法
JP7077108B2 (ja) * 2018-04-05 2022-05-30 東京エレクトロン株式会社 被加工物の処理方法
US10453684B1 (en) * 2018-05-09 2019-10-22 Applied Materials, Inc. Method for patterning a material layer with desired dimensions
WO2019222178A1 (en) 2018-05-14 2019-11-21 Nanostring Technologies, Inc. Chemical compositions and methods of using same
CN120814029A (zh) * 2023-03-24 2025-10-17 东京毅力科创株式会社 等离子体处理方法和等离子体处理装置

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JPH04282835A (ja) * 1991-03-11 1992-10-07 Fujitsu Ltd 半導体装置の製造方法
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JPS63116430A (ja) * 1986-10-28 1988-05-20 インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション マスク形成方法
JPH04282835A (ja) * 1991-03-11 1992-10-07 Fujitsu Ltd 半導体装置の製造方法
JPH0637072A (ja) * 1992-07-15 1994-02-10 Kawasaki Steel Corp テーパエッチング方法
JPH08236506A (ja) * 1995-02-28 1996-09-13 Sony Corp 半導体装置の製造方法
JP2003017474A (ja) * 2001-07-02 2003-01-17 Tdk Corp 薄膜パターニング方法、薄膜デバイスの製造方法及び薄膜磁気ヘッドの製造方法

Also Published As

Publication number Publication date
JP2012019242A (ja) 2012-01-26
WO2005024904A3 (en) 2006-06-15
US20050048785A1 (en) 2005-03-03
WO2005024904A2 (en) 2005-03-17
CN1922722A (zh) 2007-02-28
TWI357094B (en) 2012-01-21
US7541291B2 (en) 2009-06-02
US20070293050A1 (en) 2007-12-20
JP2007503720A (ja) 2007-02-22
US7250371B2 (en) 2007-07-31
KR20060126909A (ko) 2006-12-11
TW200509213A (en) 2005-03-01
CN1922722B (zh) 2011-05-11
KR101083622B1 (ko) 2011-11-16
SG149047A1 (en) 2009-01-29

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