JP4826483B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4826483B2
JP4826483B2 JP2007010576A JP2007010576A JP4826483B2 JP 4826483 B2 JP4826483 B2 JP 4826483B2 JP 2007010576 A JP2007010576 A JP 2007010576A JP 2007010576 A JP2007010576 A JP 2007010576A JP 4826483 B2 JP4826483 B2 JP 4826483B2
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JP
Japan
Prior art keywords
upper electrode
gas supply
gas
plasma processing
flow path
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Active
Application number
JP2007010576A
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English (en)
Japanese (ja)
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JP2008177428A (ja
Inventor
和男 佐々木
雅人 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007010576A priority Critical patent/JP4826483B2/ja
Priority to KR1020080005316A priority patent/KR100980525B1/ko
Priority to TW097102009A priority patent/TWI445075B/zh
Priority to CN2008100030764A priority patent/CN101236891B/zh
Publication of JP2008177428A publication Critical patent/JP2008177428A/ja
Application granted granted Critical
Publication of JP4826483B2 publication Critical patent/JP4826483B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
JP2007010576A 2007-01-19 2007-01-19 プラズマ処理装置 Active JP4826483B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007010576A JP4826483B2 (ja) 2007-01-19 2007-01-19 プラズマ処理装置
KR1020080005316A KR100980525B1 (ko) 2007-01-19 2008-01-17 플라즈마 처리 장치
TW097102009A TWI445075B (zh) 2007-01-19 2008-01-18 Plasma processing device
CN2008100030764A CN101236891B (zh) 2007-01-19 2008-01-18 等离子体处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007010576A JP4826483B2 (ja) 2007-01-19 2007-01-19 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP2008177428A JP2008177428A (ja) 2008-07-31
JP4826483B2 true JP4826483B2 (ja) 2011-11-30

Family

ID=39704216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007010576A Active JP4826483B2 (ja) 2007-01-19 2007-01-19 プラズマ処理装置

Country Status (4)

Country Link
JP (1) JP4826483B2 (zh)
KR (1) KR100980525B1 (zh)
CN (1) CN101236891B (zh)
TW (1) TWI445075B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI498053B (zh) 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
KR101118477B1 (ko) * 2009-11-26 2012-03-12 주식회사 테스 가스 분산판 및 이를 갖는 공정 챔버
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
JP5666888B2 (ja) * 2010-11-25 2015-02-12 東京エレクトロン株式会社 プラズマ処理装置及び処理システム
JP5837793B2 (ja) 2010-11-30 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理装置のバッフル構造
WO2012090715A1 (ja) * 2010-12-28 2012-07-05 三洋電機株式会社 プラズマ処理装置
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
US20140027060A1 (en) * 2012-07-27 2014-01-30 Applied Matericals, Inc Gas distribution apparatus for substrate processing systems
US10174422B2 (en) 2012-10-25 2019-01-08 Applied Materials, Inc. Apparatus for selective gas injection and extraction
JP6034655B2 (ja) 2012-10-25 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置
JP6078354B2 (ja) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 プラズマ処理装置
CN105814664B (zh) * 2013-11-18 2019-05-17 国际电气高丽株式会社 反应诱导单元、基板处理装置及薄膜沉积方法
CN103745904B (zh) * 2013-12-31 2016-08-17 深圳市华星光电技术有限公司 一种干法刻蚀机及其刻蚀方法
JP6374781B2 (ja) * 2014-12-10 2018-08-15 東京エレクトロン株式会社 プラズマ処理方法
JP2016096342A (ja) * 2015-11-26 2016-05-26 東京エレクトロン株式会社 プラズマ処理装置
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
WO2018185836A1 (ja) * 2017-04-04 2018-10-11 株式会社Ｆｕｊｉ 大気圧プラズマ装置
JP7008497B2 (ja) 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR102510329B1 (ko) * 2018-06-25 2023-03-17 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치 및 성막 처리 장치
CN113013011B (zh) * 2019-12-20 2022-11-29 中微半导体设备(上海)股份有限公司 气体分配装置及等离子体处理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW273067B (zh) 1993-10-04 1996-03-21 Tokyo Electron Co Ltd
JPH07273038A (ja) * 1994-03-29 1995-10-20 Fuji Electric Co Ltd 高周波プラズマｃｖｄ装置
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
US6123775A (en) * 1999-06-30 2000-09-26 Lam Research Corporation Reaction chamber component having improved temperature uniformity
KR100526928B1 (ko) * 2003-07-16 2005-11-09 삼성전자주식회사 식각장치
US7645341B2 (en) * 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
JP4158729B2 (ja) * 2004-03-16 2008-10-01 富士電機ホールディングス株式会社 プラズマｃｖｄ装置
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4559202B2 (ja) * 2004-07-30 2010-10-06 東京エレクトロン株式会社 プラズマエッチング装置
JP4593381B2 (ja) * 2005-06-20 2010-12-08 東京エレクトロン株式会社 上部電極、プラズマ処理装置およびプラズマ処理方法

Also Published As

Publication number Publication date
CN101236891A (zh) 2008-08-06
TW200845186A (en) 2008-11-16
JP2008177428A (ja) 2008-07-31
CN101236891B (zh) 2010-07-28
TWI445075B (zh) 2014-07-11
KR100980525B1 (ko) 2010-09-06
KR20080068572A (ko) 2008-07-23

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