JP4817575B2 - 渦電流測定を利用して、メタライゼーション処理を実状態で監視する方法 - Google Patents

渦電流測定を利用して、メタライゼーション処理を実状態で監視する方法 Download PDF

Info

Publication number
JP4817575B2
JP4817575B2 JP2001547540A JP2001547540A JP4817575B2 JP 4817575 B2 JP4817575 B2 JP 4817575B2 JP 2001547540 A JP2001547540 A JP 2001547540A JP 2001547540 A JP2001547540 A JP 2001547540A JP 4817575 B2 JP4817575 B2 JP 4817575B2
Authority
JP
Japan
Prior art keywords
sample
eddy current
signal
probe
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001547540A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003522937A (ja
Inventor
レーマン・カート・アール.
リー・シング・エム.
ジョンソン・ウォルト
フィールデン・ジョン
チャオ・グオヘング
ニコーナハド・メアダッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/633,800 external-priority patent/US6707540B1/en
Priority claimed from US09/633,198 external-priority patent/US6433541B1/en
Application filed by KLA Corp filed Critical KLA Corp
Publication of JP2003522937A publication Critical patent/JP2003522937A/ja
Application granted granted Critical
Publication of JP4817575B2 publication Critical patent/JP4817575B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/72Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Pathology (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
JP2001547540A 1999-12-23 2000-12-22 渦電流測定を利用して、メタライゼーション処理を実状態で監視する方法 Expired - Fee Related JP4817575B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US17208099P 1999-12-23 1999-12-23
US60/172,080 1999-12-23
US09/633,198 2000-08-07
US09/633,800 2000-08-07
US09/633,800 US6707540B1 (en) 1999-12-23 2000-08-07 In-situ metalization monitoring using eddy current and optical measurements
US09/633,198 US6433541B1 (en) 1999-12-23 2000-08-07 In-situ metalization monitoring using eddy current measurements during the process for removing the film
PCT/US2000/035358 WO2001046684A1 (fr) 1999-12-23 2000-12-22 Surveillance de metallisation sur site a l'aide de mesures par courant de foucault et de mesures optiques

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011048928A Division JP5113920B2 (ja) 1999-12-23 2011-03-07 Cmpシステム、及び、渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法

Publications (2)

Publication Number Publication Date
JP2003522937A JP2003522937A (ja) 2003-07-29
JP4817575B2 true JP4817575B2 (ja) 2011-11-16

Family

ID=27390074

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2001547540A Expired - Fee Related JP4817575B2 (ja) 1999-12-23 2000-12-22 渦電流測定を利用して、メタライゼーション処理を実状態で監視する方法
JP2011048928A Expired - Lifetime JP5113920B2 (ja) 1999-12-23 2011-03-07 Cmpシステム、及び、渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011048928A Expired - Lifetime JP5113920B2 (ja) 1999-12-23 2011-03-07 Cmpシステム、及び、渦電流測定あるいは光学測定を利用して、メタライゼーション処理を実状態で監視する方法

Country Status (3)

Country Link
EP (1) EP1244907A1 (fr)
JP (2) JP4817575B2 (fr)
WO (1) WO2001046684A1 (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718737B1 (ko) 2000-01-17 2007-05-15 가부시키가이샤 에바라 세이사꾸쇼 폴리싱 장치
US6924641B1 (en) 2000-05-19 2005-08-02 Applied Materials, Inc. Method and apparatus for monitoring a metal layer during chemical mechanical polishing
US6878038B2 (en) 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
US6602724B2 (en) * 2000-07-27 2003-08-05 Applied Materials, Inc. Chemical mechanical polishing of a metal layer with polishing rate monitoring
TW541425B (en) * 2000-10-20 2003-07-11 Ebara Corp Frequency measuring device, polishing device using the same and eddy current sensor
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
US6966816B2 (en) 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6811466B1 (en) 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
GB0208881D0 (en) * 2002-04-18 2002-05-29 Transense Technologies Plc Improved method for tracking a resonant frequency
ITFI20020077A1 (it) * 2002-05-10 2003-11-10 Galileo Vacuum Systems S R L Dispositivo per la determinazione dello spessore di uno strato conduttivo
US7205166B2 (en) * 2002-06-28 2007-04-17 Lam Research Corporation Method and apparatus of arrayed, clustered or coupled eddy current sensor configuration for measuring conductive film properties
US6788050B2 (en) * 2002-12-23 2004-09-07 Lam Research Corp. System, method and apparatus for thin-film substrate signal separation using eddy current
IL153894A (en) 2003-01-12 2010-05-31 Nova Measuring Instr Ltd Method and system for measuring the thickness of thin conductive layers
US7101257B2 (en) * 2003-05-21 2006-09-05 Ebara Corporation Substrate polishing apparatus
US7112960B2 (en) 2003-07-31 2006-09-26 Applied Materials, Inc. Eddy current system for in-situ profile measurement
JP4451111B2 (ja) * 2003-10-20 2010-04-14 株式会社荏原製作所 渦電流センサ
DE10352422B3 (de) * 2003-11-10 2005-04-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur quantitativen Längenbestimmung eines Weichzonenbereiches eines teilgehärteten Werkstückes
JP4699797B2 (ja) * 2005-04-20 2011-06-15 株式会社リベックス 測定方法および装置
US7764377B2 (en) 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
WO2010045162A2 (fr) * 2008-10-16 2010-04-22 Applied Materials, Inc. Compensation de gain de courant de foucault
TWI408759B (zh) 2008-11-14 2013-09-11 Applied Materials Inc 具有增強邊緣解析度的渦電流感測器
US9194687B1 (en) * 2010-02-04 2015-11-24 Textron Innovations Inc. System and method for measuring non-conductive coating thickness using eddy currents
KR101104884B1 (ko) 2010-02-26 2012-01-17 한국수력원자력 주식회사 와전류 검사 장치 및 와전류 처리 방법
US9687169B2 (en) * 2011-12-08 2017-06-27 Kimberly-Clark Worldwide, Inc. System, controller, and method for determining conductance of an object
US9275917B2 (en) 2013-10-29 2016-03-01 Applied Materials, Inc. Determination of gain for eddy current sensor
US9281253B2 (en) 2013-10-29 2016-03-08 Applied Materials, Inc. Determination of gain for eddy current sensor
US9636797B2 (en) 2014-02-12 2017-05-02 Applied Materials, Inc. Adjusting eddy current measurements
KR102326730B1 (ko) * 2014-03-12 2021-11-17 가부시키가이샤 에바라 세이사꾸쇼 막 두께 측정값의 보정 방법, 막 두께 보정기 및 와전류 센서
JP6445771B2 (ja) * 2014-03-12 2018-12-26 株式会社荏原製作所 膜厚測定値の補正方法、及び、膜厚補正器
KR102083607B1 (ko) * 2014-12-12 2020-04-16 주식회사 케이씨텍 화학 기계적 연마 장치
US11004708B2 (en) 2016-10-28 2021-05-11 Applied Materials, Inc. Core configuration with alternating posts for in-situ electromagnetic induction monitoring system
KR102489419B1 (ko) 2017-01-13 2023-01-18 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 모니터링으로부터의 측정들의 비저항 기반 조정
TWI789385B (zh) * 2017-04-21 2023-01-11 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
US10898986B2 (en) 2017-09-15 2021-01-26 Applied Materials, Inc. Chattering correction for accurate sensor position determination on wafer
TWI825075B (zh) * 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
JP7153490B2 (ja) * 2018-07-13 2022-10-14 株式会社荏原製作所 研磨装置およびキャリブレーション方法
JP2023517449A (ja) 2020-05-14 2023-04-26 アプライド マテリアルズ インコーポレイテッド 研磨中のインシトゥモニタリングで使用するためのニューラルネットワークをトレーニングするための技術及び研磨システム
CN115038549B (zh) 2020-06-24 2024-03-12 应用材料公司 使用研磨垫磨损补偿的基板层厚度确定
CN115605725A (zh) * 2020-08-25 2023-01-13 康宁股份有限公司(Us) 原位沉积厚度监测
JP7396382B2 (ja) 2022-03-10 2023-12-12 沖電気工業株式会社 光ファイバセンサ及びブリルアン周波数シフト測定方法
JP7351365B1 (ja) 2022-03-17 2023-09-27 沖電気工業株式会社 光ファイバセンサ及びブリルアン周波数シフト測定方法

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02257630A (ja) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd 半導体基板の研磨制御方法
JPH032501A (ja) * 1989-05-29 1991-01-08 Sumitomo Metal Ind Ltd 寸法測定方法
JPH0321801A (ja) * 1989-06-19 1991-01-30 Sumitomo Metal Ind Ltd 寸法測定方法
JPH03189503A (ja) * 1989-12-14 1991-08-19 General Electric Co <Ge> 被覆の厚さを測定する装置と方法
JPH05180607A (ja) * 1989-12-27 1993-07-23 Framatome Et Cogema <Fragema> 金属管間の距離および管上の酸化膜の肉厚を測定する方法およびその測定装置
JPH07235520A (ja) * 1993-12-22 1995-09-05 Internatl Business Mach Corp <Ibm> 研磨過程モニタ装置及びそのモニタ方法
JPH0854211A (ja) * 1994-01-28 1996-02-27 Applied Materials Inc 不透明膜の堆積速度モニター方法および装置
JPH08285514A (ja) * 1995-04-10 1996-11-01 Internatl Business Mach Corp <Ibm> フィルム厚の変化のその場での監視方法
JPH097985A (ja) * 1995-03-28 1997-01-10 Applied Materials Inc ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法
US5629621A (en) * 1991-12-06 1997-05-13 Massachusetts Institute Of Technology Apparatus and methods for obtaining increased sensitivity, selectivity and dynamic range in property measurement using magnetometers
JPH10253326A (ja) * 1997-03-11 1998-09-25 Nikon Corp 薄層の厚さと薄層の厚さの変化を測定する方法及び装置
JPH10335288A (ja) * 1997-06-05 1998-12-18 Sony Corp 基板研磨装置及び研磨終点検出方法
JPH11307486A (ja) * 1998-04-23 1999-11-05 Toshiba Corp Cmp方法およびそれに使用するcmp装置
JP2000505905A (ja) * 1996-12-18 2000-05-16 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 導電材製膜の厚みを測定する方法
JP2001522139A (ja) * 1997-10-31 2001-11-13 アプライド マテリアルズ インコーポレイテッド 化学的機械研磨中に基板反射率をモデル化する方法及び装置

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3229198A (en) 1962-09-28 1966-01-11 Hugo L Libby Eddy current nondestructive testing device for measuring multiple parameter variables of a metal sample
JPS5766354A (en) * 1980-10-09 1982-04-22 Mitsubishi Heavy Ind Ltd Eddy current flaw detector
JPS5865559A (ja) * 1981-10-13 1983-04-19 Sumitomo Metal Ind Ltd 鋳片の自動厚み測定装置
JPS5967405A (ja) * 1982-09-30 1984-04-17 Sumitomo Metal Ind Ltd ライナ厚測定方法
JPS6186601A (ja) * 1984-10-05 1986-05-02 Hitachi Ltd 核燃料酸化膜厚測定装置
FR2572175A1 (fr) * 1984-10-24 1986-04-25 Stein Heurtey Procede et dispositif pour mesurer l'epaisseur de couches metalliques minces deposees sur un support conducteur
JPS62225947A (ja) * 1986-03-26 1987-10-03 Kobe Steel Ltd 渦流測定用プロ−ブ
JPS62225903A (ja) * 1986-03-27 1987-10-03 Kobe Steel Ltd ライナ被覆管の厚み測定装置
JPH068723B2 (ja) * 1986-04-04 1994-02-02 株式会社神戸製鋼所 ライナ被覆管の厚み測定方法
JP2559401B2 (ja) * 1987-03-30 1996-12-04 株式会社日立製作所 金属材料の劣化検査方法
JPS63311103A (ja) * 1987-06-12 1988-12-19 Sumitomo Metal Ind Ltd 厚さ測定方法
US4893079A (en) 1988-08-29 1990-01-09 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for correcting eddy current signal voltage for temperature effects
JPH0267909A (ja) * 1988-09-02 1990-03-07 Sumitomo Metal Ind Ltd 肉厚測定装置
JPH02124406A (ja) * 1988-11-01 1990-05-11 Mitsubishi Electric Corp 半導体製造装置
JPH0286128U (fr) * 1988-12-21 1990-07-09
JPH03234467A (ja) * 1990-02-05 1991-10-18 Canon Inc スタンパの金型取付面の研磨方法およびその研磨機
JP3382011B2 (ja) * 1993-04-06 2003-03-04 株式会社東芝 膜厚測定装置、ポリシング装置および半導体製造装置
DK76293D0 (da) * 1993-06-25 1993-06-25 Brueel & Kjaer As Forskydningstransducer
DE4325767A1 (de) * 1993-07-31 1995-02-02 Karl Deutsch Pruef Und Mesgera Schichtdickenmeßvorrichtung
JP3326443B2 (ja) * 1993-08-10 2002-09-24 株式会社ニコン ウエハ研磨方法及びその装置
US5418823A (en) * 1994-01-04 1995-05-23 General Electric Company Combined ultrasonic and eddy-current method and apparatus for non-destructive testing of tubular objects to determine thickness of metallic linings or coatings
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
JPH08285464A (ja) * 1995-04-19 1996-11-01 Kawasaki Steel Corp 溶融金属容器耐火壁中の地金検知方法及び装置
JP3321338B2 (ja) * 1995-07-24 2002-09-03 株式会社東芝 半導体装置の製造方法および製造装置
JP3303963B2 (ja) * 1997-01-20 2002-07-22 株式会社東京精密 ウェーハの厚み加工量測定装置
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
JP3327175B2 (ja) * 1997-07-18 2002-09-24 株式会社ニコン 検知部及びこの検知部を具えたウェハ研磨装置
US6190234B1 (en) * 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02257630A (ja) * 1989-03-30 1990-10-18 Kyushu Electron Metal Co Ltd 半導体基板の研磨制御方法
JPH032501A (ja) * 1989-05-29 1991-01-08 Sumitomo Metal Ind Ltd 寸法測定方法
JPH0321801A (ja) * 1989-06-19 1991-01-30 Sumitomo Metal Ind Ltd 寸法測定方法
JPH03189503A (ja) * 1989-12-14 1991-08-19 General Electric Co <Ge> 被覆の厚さを測定する装置と方法
JPH05180607A (ja) * 1989-12-27 1993-07-23 Framatome Et Cogema <Fragema> 金属管間の距離および管上の酸化膜の肉厚を測定する方法およびその測定装置
US5629621A (en) * 1991-12-06 1997-05-13 Massachusetts Institute Of Technology Apparatus and methods for obtaining increased sensitivity, selectivity and dynamic range in property measurement using magnetometers
JPH07235520A (ja) * 1993-12-22 1995-09-05 Internatl Business Mach Corp <Ibm> 研磨過程モニタ装置及びそのモニタ方法
JPH0854211A (ja) * 1994-01-28 1996-02-27 Applied Materials Inc 不透明膜の堆積速度モニター方法および装置
JPH097985A (ja) * 1995-03-28 1997-01-10 Applied Materials Inc ケミカルメカニカルポリシングの操作をインシチュウでモニタするための装置及び方法
JPH08285514A (ja) * 1995-04-10 1996-11-01 Internatl Business Mach Corp <Ibm> フィルム厚の変化のその場での監視方法
JP2000505905A (ja) * 1996-12-18 2000-05-16 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 導電材製膜の厚みを測定する方法
JPH10253326A (ja) * 1997-03-11 1998-09-25 Nikon Corp 薄層の厚さと薄層の厚さの変化を測定する方法及び装置
JPH10335288A (ja) * 1997-06-05 1998-12-18 Sony Corp 基板研磨装置及び研磨終点検出方法
JP2001522139A (ja) * 1997-10-31 2001-11-13 アプライド マテリアルズ インコーポレイテッド 化学的機械研磨中に基板反射率をモデル化する方法及び装置
JPH11307486A (ja) * 1998-04-23 1999-11-05 Toshiba Corp Cmp方法およびそれに使用するcmp装置

Also Published As

Publication number Publication date
EP1244907A1 (fr) 2002-10-02
WO2001046684A1 (fr) 2001-06-28
JP2003522937A (ja) 2003-07-29
JP2011164110A (ja) 2011-08-25
WO2001046684A9 (fr) 2002-05-23
JP5113920B2 (ja) 2013-01-09

Similar Documents

Publication Publication Date Title
JP4817575B2 (ja) 渦電流測定を利用して、メタライゼーション処理を実状態で監視する方法
US6621264B1 (en) In-situ metalization monitoring using eddy current measurements during the process for removing the film
US6707540B1 (en) In-situ metalization monitoring using eddy current and optical measurements
KR101176095B1 (ko) 와류 센서
US7500901B2 (en) Data processing for monitoring chemical mechanical polishing
US5959731A (en) Optical micrometer for measuring thickness of transparent substrates based on optical absorption
US10557803B2 (en) Surface height determination of transparent film
US20060009132A1 (en) Chemical mechanical polishing apparatus with non-conductive elements
KR101037490B1 (ko) 멀티-스텝 시퀀스에서의 금속 잔류물 검출 및 매핑용시스템 및 방법
TW200401102A (en) System and method of broad band optical end point detection for film change indication
WO2010045162A2 (fr) Compensation de gain de courant de foucault
US8501501B1 (en) Measurement of a sample using multiple models
US20040152310A1 (en) Signal improvement in eddy current sensing
CN101791781A (zh) 抛光状态监视方法、抛光状态监视装置、抛光设备、加工晶片、半导体器件制造方法和半导体器件
JP5188624B2 (ja) センサの運動方向に垂直な表面変動を検出するための非振動式接触電位差測定の較正
TWI289091B (en) Apparatus for endpoint detection during polishing
JP4783801B2 (ja) 非振動式接触電位差センサおよび制御された照射を利用した半導体検査システムおよび装置
JP4918634B2 (ja) 光学計測システムを使用した誘電体薄膜の弾性係数の測定
US6853873B1 (en) Enhanced throughput of a metrology tool
US6896588B2 (en) Chemical mechanical polishing optical endpoint detection
US20210125881A1 (en) Thickness sensor for conductive features
US20020151127A1 (en) Optically-based method and apparatus for detecting and characterizing surface pits in a metal film during chemical mechanical polish

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071214

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100728

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101203

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101210

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110307

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110802

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110830

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140909

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4817575

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees