JP4801045B2 - ドライクリーニングプロセスのプラズマ処理システムからチャンバ残渣を除去する方法 - Google Patents

ドライクリーニングプロセスのプラズマ処理システムからチャンバ残渣を除去する方法 Download PDF

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Publication number
JP4801045B2
JP4801045B2 JP2007506148A JP2007506148A JP4801045B2 JP 4801045 B2 JP4801045 B2 JP 4801045B2 JP 2007506148 A JP2007506148 A JP 2007506148A JP 2007506148 A JP2007506148 A JP 2007506148A JP 4801045 B2 JP4801045 B2 JP 4801045B2
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Japan
Prior art keywords
chamber
plasma
monitoring
processing chamber
gas
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Expired - Fee Related
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JP2007506148A
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English (en)
Japanese (ja)
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JP2007531996A (ja
JP2007531996A5 (enExample
Inventor
ガウデット、マーセル
モスデン、アエラン
ソアベ、ロバート・ジェイ．
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of JP2007531996A5 publication Critical patent/JP2007531996A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2007506148A 2004-03-31 2005-01-28 ドライクリーニングプロセスのプラズマ処理システムからチャンバ残渣を除去する方法 Expired - Fee Related JP4801045B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/813,390 US7959970B2 (en) 2004-03-31 2004-03-31 System and method of removing chamber residues from a plasma processing system in a dry cleaning process
US10/813,390 2004-03-31
PCT/US2005/002689 WO2005102545A2 (en) 2004-03-31 2005-01-28 System and method of removing chamber residues from a plasma processing system in a dry cleaning process

Publications (3)

Publication Number Publication Date
JP2007531996A JP2007531996A (ja) 2007-11-08
JP2007531996A5 JP2007531996A5 (enExample) 2008-05-08
JP4801045B2 true JP4801045B2 (ja) 2011-10-26

Family

ID=35059487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007506148A Expired - Fee Related JP4801045B2 (ja) 2004-03-31 2005-01-28 ドライクリーニングプロセスのプラズマ処理システムからチャンバ残渣を除去する方法

Country Status (4)

Country Link
US (1) US7959970B2 (enExample)
JP (1) JP4801045B2 (enExample)
TW (1) TWI291997B (enExample)
WO (1) WO2005102545A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180008409A (ko) * 2015-05-14 2018-01-24 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 방법

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JP2002286636A (ja) * 2001-01-19 2002-10-03 Advantest Corp 化学物質検出方法及び装置
JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
KR100605942B1 (ko) * 2004-07-16 2006-08-02 동부일렉트로닉스 주식회사 반도체 소자용 금속 배선의 후처리 방법
US7862683B2 (en) * 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
JP2007287935A (ja) * 2006-04-17 2007-11-01 Toshiba Corp 気相成長装置とそれを用いた半導体装置の製造方法
US8292698B1 (en) 2007-03-30 2012-10-23 Lam Research Corporation On-line chamber cleaning using dry ice blasting
US20100024840A1 (en) * 2008-07-29 2010-02-04 Chang-Lin Hsieh Chamber plasma-cleaning process scheme
KR101794069B1 (ko) * 2010-05-26 2017-12-04 삼성전자주식회사 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법
DE102011056538A1 (de) * 2011-12-16 2013-06-20 Aixtron Se Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung
US9048066B2 (en) 2012-07-03 2015-06-02 Spts Technologies Limited Method of etching
TW201443984A (zh) * 2013-02-05 2014-11-16 Hitachi Int Electric Inc 清洗方法、半導體裝置之製造方法、基板處理裝置、以及記錄媒體及清洗結束判定方法
US9824865B2 (en) * 2014-03-05 2017-11-21 Lam Research Corporation Waferless clean in dielectric etch process
US9478390B2 (en) * 2014-06-30 2016-10-25 Fei Company Integrated light optics and gas delivery in a charged particle lens
US20170133284A1 (en) * 2015-11-05 2017-05-11 Texas Instruments Incorporated Smart in-situ chamber clean
JP6638334B2 (ja) * 2015-11-05 2020-01-29 栗田工業株式会社 プラズマ処理装置部品のクリーニング方法及びクリーニング装置
JP6638360B2 (ja) * 2015-12-08 2020-01-29 栗田工業株式会社 プラズマ処理装置のクリーニング方法及びクリーニング装置
WO2017172536A1 (en) * 2016-03-31 2017-10-05 Tokyo Electron Limited Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy
US10436717B2 (en) 2016-11-18 2019-10-08 Tokyo Electron Limited Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process
JP2018107264A (ja) * 2016-12-26 2018-07-05 東京エレクトロン株式会社 消耗判定方法及びプラズマ処理装置
KR20190121864A (ko) 2017-03-17 2019-10-28 도쿄엘렉트론가부시키가이샤 에칭 메트릭 향상을 위한 표면 개질 제어
US10410845B2 (en) 2017-11-22 2019-09-10 Applied Materials, Inc. Using bias RF pulsing to effectively clean electrostatic chuck (ESC)
JP2020077750A (ja) * 2018-11-07 2020-05-21 東京エレクトロン株式会社 クリーニング方法及び成膜方法
US12032302B2 (en) 2021-03-26 2024-07-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cleaning substrates
US12306044B2 (en) 2022-09-20 2025-05-20 Tokyo Electron Limited Optical emission spectroscopy for advanced process characterization
US12362158B2 (en) 2022-10-25 2025-07-15 Tokyo Electron Limited Method for OES data collection and endpoint detection
US12158374B2 (en) 2022-10-25 2024-12-03 Tokyo Electron Limited Time-resolved OES data collection

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US5403434A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
TW394989B (en) * 1997-10-29 2000-06-21 Matsushita Electronics Corp Semiconductor device manufacturing and reaction room environment control method for dry etching device
US5993679A (en) * 1997-11-06 1999-11-30 Anelva Corporation Method of cleaning metallic films built up within thin film deposition apparatus
JP2000195830A (ja) 1998-12-28 2000-07-14 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置のクリ―ニング方法、半導体装置の製造方法及び半導体装置
JP2002289535A (ja) * 2001-03-26 2002-10-04 Seiko Epson Corp プラズマ気相化学堆積装置のクリーニング方法
US20020148816A1 (en) * 2001-04-17 2002-10-17 Jung Chang Bo Method and apparatus for fabricating printed circuit board using atmospheric pressure capillary discharge plasma shower
US6545245B2 (en) * 2001-05-02 2003-04-08 United Microelectronics Corp. Method for dry cleaning metal etching chamber
JP2003282465A (ja) * 2002-03-26 2003-10-03 Hitachi Ltd 半導体装置の製造方法
JP2004005923A (ja) * 2002-03-29 2004-01-08 Fujitsu Ltd 磁気ヘッドの製造方法および磁気ヘッド、パターン形成方法
US20040018715A1 (en) * 2002-07-25 2004-01-29 Applied Materials, Inc. Method of cleaning a surface of a material layer
US7097716B2 (en) * 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
US7122125B2 (en) * 2002-11-04 2006-10-17 Applied Materials, Inc. Controlled polymerization on plasma reactor wall
US7041608B2 (en) * 2004-02-06 2006-05-09 Eastman Kodak Company Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180008409A (ko) * 2015-05-14 2018-01-24 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 방법
KR102366893B1 (ko) 2015-05-14 2022-02-23 도쿄엘렉트론가부시키가이샤 클리닝 방법 및 플라즈마 처리 방법

Also Published As

Publication number Publication date
JP2007531996A (ja) 2007-11-08
US7959970B2 (en) 2011-06-14
WO2005102545A3 (en) 2006-10-12
TWI291997B (en) 2008-01-01
WO2005102545A2 (en) 2005-11-03
US20050224458A1 (en) 2005-10-13
TW200600607A (en) 2006-01-01

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