TWI291997B - System and method of removing chamber residues from a plasma processing system in a dry cleaning process - Google Patents
System and method of removing chamber residues from a plasma processing system in a dry cleaning process Download PDFInfo
- Publication number
- TWI291997B TWI291997B TW094110240A TW94110240A TWI291997B TW I291997 B TWI291997 B TW I291997B TW 094110240 A TW094110240 A TW 094110240A TW 94110240 A TW94110240 A TW 94110240A TW I291997 B TWI291997 B TW I291997B
- Authority
- TW
- Taiwan
- Prior art keywords
- gas
- chamber
- processing chamber
- plasma processing
- processing system
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 89
- 238000000034 method Methods 0.000 title claims description 76
- 238000005108 dry cleaning Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 50
- 239000007789 gas Substances 0.000 claims description 49
- 238000012544 monitoring process Methods 0.000 claims description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 4
- 229910002090 carbon oxide Inorganic materials 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims 2
- 241000237536 Mytilus edulis Species 0.000 claims 1
- 241000700159 Rattus Species 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 235000020638 mussel Nutrition 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000004291 sulphur dioxide Substances 0.000 claims 1
- 235000010269 sulphur dioxide Nutrition 0.000 claims 1
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 7
- 238000012546 transfer Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000008267 milk Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
- 235000013336 milk Nutrition 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000003134 recirculating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000237502 Ostreidae Species 0.000 description 1
- OBOXTJCIIVUZEN-UHFFFAOYSA-N [C].[O] Chemical group [C].[O] OBOXTJCIIVUZEN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010616 electrical installation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000020636 oyster Nutrition 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/813,390 US7959970B2 (en) | 2004-03-31 | 2004-03-31 | System and method of removing chamber residues from a plasma processing system in a dry cleaning process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200600607A TW200600607A (en) | 2006-01-01 |
| TWI291997B true TWI291997B (en) | 2008-01-01 |
Family
ID=35059487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094110240A TWI291997B (en) | 2004-03-31 | 2005-03-31 | System and method of removing chamber residues from a plasma processing system in a dry cleaning process |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7959970B2 (enExample) |
| JP (1) | JP4801045B2 (enExample) |
| TW (1) | TWI291997B (enExample) |
| WO (1) | WO2005102545A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI832125B (zh) * | 2021-03-26 | 2024-02-11 | 台灣積體電路製造股份有限公司 | 半導體電路之製造方法及半導體製造系統 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002286636A (ja) * | 2001-01-19 | 2002-10-03 | Advantest Corp | 化学物質検出方法及び装置 |
| JP2005033173A (ja) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| KR100605942B1 (ko) * | 2004-07-16 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 반도체 소자용 금속 배선의 후처리 방법 |
| US7862683B2 (en) * | 2005-12-02 | 2011-01-04 | Tokyo Electron Limited | Chamber dry cleaning |
| JP2007287935A (ja) * | 2006-04-17 | 2007-11-01 | Toshiba Corp | 気相成長装置とそれを用いた半導体装置の製造方法 |
| US8292698B1 (en) | 2007-03-30 | 2012-10-23 | Lam Research Corporation | On-line chamber cleaning using dry ice blasting |
| US20100024840A1 (en) * | 2008-07-29 | 2010-02-04 | Chang-Lin Hsieh | Chamber plasma-cleaning process scheme |
| KR101794069B1 (ko) * | 2010-05-26 | 2017-12-04 | 삼성전자주식회사 | 반도체 제조설비 및 그의 시즈닝 공정 최적화 방법 |
| DE102011056538A1 (de) * | 2011-12-16 | 2013-06-20 | Aixtron Se | Verfahren zum Entfernen unerwünschter Rückstände aus einem MOCVD-Reaktor sowie zugehörige Vorrichtung |
| US9048066B2 (en) | 2012-07-03 | 2015-06-02 | Spts Technologies Limited | Method of etching |
| TW201443984A (zh) * | 2013-02-05 | 2014-11-16 | Hitachi Int Electric Inc | 清洗方法、半導體裝置之製造方法、基板處理裝置、以及記錄媒體及清洗結束判定方法 |
| US9824865B2 (en) * | 2014-03-05 | 2017-11-21 | Lam Research Corporation | Waferless clean in dielectric etch process |
| US9478390B2 (en) * | 2014-06-30 | 2016-10-25 | Fei Company | Integrated light optics and gas delivery in a charged particle lens |
| JP6661283B2 (ja) * | 2015-05-14 | 2020-03-11 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理方法 |
| US20170133284A1 (en) * | 2015-11-05 | 2017-05-11 | Texas Instruments Incorporated | Smart in-situ chamber clean |
| JP6638334B2 (ja) * | 2015-11-05 | 2020-01-29 | 栗田工業株式会社 | プラズマ処理装置部品のクリーニング方法及びクリーニング装置 |
| JP6638360B2 (ja) * | 2015-12-08 | 2020-01-29 | 栗田工業株式会社 | プラズマ処理装置のクリーニング方法及びクリーニング装置 |
| WO2017172536A1 (en) * | 2016-03-31 | 2017-10-05 | Tokyo Electron Limited | Controlling dry etch process characteristics using waferless dry clean optical emission spectroscopy |
| US10436717B2 (en) | 2016-11-18 | 2019-10-08 | Tokyo Electron Limited | Compositional optical emission spectroscopy for detection of particle induced arcs in a fabrication process |
| JP2018107264A (ja) * | 2016-12-26 | 2018-07-05 | 東京エレクトロン株式会社 | 消耗判定方法及びプラズマ処理装置 |
| KR20190121864A (ko) | 2017-03-17 | 2019-10-28 | 도쿄엘렉트론가부시키가이샤 | 에칭 메트릭 향상을 위한 표면 개질 제어 |
| US10410845B2 (en) | 2017-11-22 | 2019-09-10 | Applied Materials, Inc. | Using bias RF pulsing to effectively clean electrostatic chuck (ESC) |
| JP2020077750A (ja) * | 2018-11-07 | 2020-05-21 | 東京エレクトロン株式会社 | クリーニング方法及び成膜方法 |
| US12306044B2 (en) | 2022-09-20 | 2025-05-20 | Tokyo Electron Limited | Optical emission spectroscopy for advanced process characterization |
| US12362158B2 (en) | 2022-10-25 | 2025-07-15 | Tokyo Electron Limited | Method for OES data collection and endpoint detection |
| US12158374B2 (en) | 2022-10-25 | 2024-12-03 | Tokyo Electron Limited | Time-resolved OES data collection |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403434A (en) * | 1994-01-06 | 1995-04-04 | Texas Instruments Incorporated | Low-temperature in-situ dry cleaning process for semiconductor wafer |
| TW394989B (en) * | 1997-10-29 | 2000-06-21 | Matsushita Electronics Corp | Semiconductor device manufacturing and reaction room environment control method for dry etching device |
| US5993679A (en) * | 1997-11-06 | 1999-11-30 | Anelva Corporation | Method of cleaning metallic films built up within thin film deposition apparatus |
| JP2000195830A (ja) | 1998-12-28 | 2000-07-14 | Mitsubishi Electric Corp | 半導体製造装置、半導体製造装置のクリ―ニング方法、半導体装置の製造方法及び半導体装置 |
| JP2002289535A (ja) * | 2001-03-26 | 2002-10-04 | Seiko Epson Corp | プラズマ気相化学堆積装置のクリーニング方法 |
| US20020148816A1 (en) * | 2001-04-17 | 2002-10-17 | Jung Chang Bo | Method and apparatus for fabricating printed circuit board using atmospheric pressure capillary discharge plasma shower |
| US6545245B2 (en) * | 2001-05-02 | 2003-04-08 | United Microelectronics Corp. | Method for dry cleaning metal etching chamber |
| JP2003282465A (ja) * | 2002-03-26 | 2003-10-03 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2004005923A (ja) * | 2002-03-29 | 2004-01-08 | Fujitsu Ltd | 磁気ヘッドの製造方法および磁気ヘッド、パターン形成方法 |
| US20040018715A1 (en) * | 2002-07-25 | 2004-01-29 | Applied Materials, Inc. | Method of cleaning a surface of a material layer |
| US7097716B2 (en) * | 2002-10-17 | 2006-08-29 | Applied Materials, Inc. | Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect |
| US7122125B2 (en) * | 2002-11-04 | 2006-10-17 | Applied Materials, Inc. | Controlled polymerization on plasma reactor wall |
| US7041608B2 (en) * | 2004-02-06 | 2006-05-09 | Eastman Kodak Company | Providing fluorocarbon layers on conductive electrodes in making electronic devices such as OLED devices |
-
2004
- 2004-03-31 US US10/813,390 patent/US7959970B2/en not_active Expired - Fee Related
-
2005
- 2005-01-28 JP JP2007506148A patent/JP4801045B2/ja not_active Expired - Fee Related
- 2005-01-28 WO PCT/US2005/002689 patent/WO2005102545A2/en not_active Ceased
- 2005-03-31 TW TW094110240A patent/TWI291997B/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI832125B (zh) * | 2021-03-26 | 2024-02-11 | 台灣積體電路製造股份有限公司 | 半導體電路之製造方法及半導體製造系統 |
| US12032302B2 (en) | 2021-03-26 | 2024-07-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for cleaning substrates |
| US12393129B2 (en) | 2021-03-26 | 2025-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device for cleaning substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007531996A (ja) | 2007-11-08 |
| US7959970B2 (en) | 2011-06-14 |
| WO2005102545A3 (en) | 2006-10-12 |
| JP4801045B2 (ja) | 2011-10-26 |
| WO2005102545A2 (en) | 2005-11-03 |
| US20050224458A1 (en) | 2005-10-13 |
| TW200600607A (en) | 2006-01-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |