JP4795598B2 - 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置 - Google Patents

集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置 Download PDF

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Publication number
JP4795598B2
JP4795598B2 JP2001545312A JP2001545312A JP4795598B2 JP 4795598 B2 JP4795598 B2 JP 4795598B2 JP 2001545312 A JP2001545312 A JP 2001545312A JP 2001545312 A JP2001545312 A JP 2001545312A JP 4795598 B2 JP4795598 B2 JP 4795598B2
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Prior art keywords
flash
flash memory
memory
read
write
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JP2003517168A (ja
JP2003517168A5 (https=
Inventor
ジャー、サンジャイ
シモンズ、スティーブン
エルフセイニ、ジャラル
ユー、ニコラス・ケー
カーン、サフィ
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Storage Device Security (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2001545312A 1999-12-17 2000-12-14 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置 Expired - Lifetime JP4795598B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/465,665 US6407949B1 (en) 1999-12-17 1999-12-17 Mobile communication device having integrated embedded flash and SRAM memory
US09/465,665 1999-12-17
PCT/US2000/034216 WO2001045106A2 (en) 1999-12-17 2000-12-14 Mobile communication device having integrated embedded flash and sram memory

Related Child Applications (1)

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JP2011092137A Division JP5123410B2 (ja) 1999-12-17 2011-04-18 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置

Publications (3)

Publication Number Publication Date
JP2003517168A JP2003517168A (ja) 2003-05-20
JP2003517168A5 JP2003517168A5 (https=) 2011-07-21
JP4795598B2 true JP4795598B2 (ja) 2011-10-19

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Family Applications (5)

Application Number Title Priority Date Filing Date
JP2001545312A Expired - Lifetime JP4795598B2 (ja) 1999-12-17 2000-12-14 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2011092137A Expired - Lifetime JP5123410B2 (ja) 1999-12-17 2011-04-18 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2012024017A Withdrawn JP2012141994A (ja) 1999-12-17 2012-02-07 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2012024016A Expired - Lifetime JP5453471B2 (ja) 1999-12-17 2012-02-07 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2014077098A Expired - Lifetime JP5801436B2 (ja) 1999-12-17 2014-04-03 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2011092137A Expired - Lifetime JP5123410B2 (ja) 1999-12-17 2011-04-18 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2012024017A Withdrawn JP2012141994A (ja) 1999-12-17 2012-02-07 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2012024016A Expired - Lifetime JP5453471B2 (ja) 1999-12-17 2012-02-07 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置
JP2014077098A Expired - Lifetime JP5801436B2 (ja) 1999-12-17 2014-04-03 集積化埋込型フラッシュ及びｓｒａｍメモリを有する移動通信装置

Country Status (12)

Country Link
US (2) US6407949B1 (https=)
EP (4) EP1238393B1 (https=)
JP (5) JP4795598B2 (https=)
KR (1) KR20030011067A (https=)
CN (1) CN1411601A (https=)
AT (1) ATE339764T1 (https=)
AU (1) AU2271301A (https=)
CA (4) CA2704893A1 (https=)
DE (1) DE60030765T2 (https=)
ES (1) ES2269213T3 (https=)
HK (1) HK1052248A1 (https=)
WO (1) WO2001045106A2 (https=)

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Also Published As

Publication number Publication date
US6407949B1 (en) 2002-06-18
ES2269213T3 (es) 2007-04-01
JP2011192290A (ja) 2011-09-29
CA2704894A1 (en) 2001-06-21
ATE339764T1 (de) 2006-10-15
EP1710806A1 (en) 2006-10-11
JP5123410B2 (ja) 2013-01-23
EP1238393A2 (en) 2002-09-11
HK1052248A1 (zh) 2003-09-05
EP1238393B1 (en) 2006-09-13
JP5453471B2 (ja) 2014-03-26
AU2271301A (en) 2001-06-25
DE60030765D1 (de) 2006-10-26
WO2001045106A3 (en) 2002-01-10
EP1713080A1 (en) 2006-10-18
CA2393143A1 (en) 2001-06-21
JP2003517168A (ja) 2003-05-20
JP2014160485A (ja) 2014-09-04
WO2001045106A2 (en) 2001-06-21
EP1713079A1 (en) 2006-10-18
JP2012141993A (ja) 2012-07-26
CA2704893A1 (en) 2001-06-21
EP1710806B1 (en) 2016-02-03
CN1411601A (zh) 2003-04-16
JP2012141994A (ja) 2012-07-26
JP5801436B2 (ja) 2015-10-28
US20010036109A1 (en) 2001-11-01
US6392925B2 (en) 2002-05-21
KR20030011067A (ko) 2003-02-06
EP1713079B1 (en) 2018-03-21
DE60030765T2 (de) 2007-09-13
CA2704892A1 (en) 2001-06-21

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