DE60030765T2 - Mobiles kommunikationsgerät mit integriertem eingebettetem flash und sram speicher - Google Patents

Mobiles kommunikationsgerät mit integriertem eingebettetem flash und sram speicher Download PDF

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Publication number
DE60030765T2
DE60030765T2 DE60030765T DE60030765T DE60030765T2 DE 60030765 T2 DE60030765 T2 DE 60030765T2 DE 60030765 T DE60030765 T DE 60030765T DE 60030765 T DE60030765 T DE 60030765T DE 60030765 T2 DE60030765 T2 DE 60030765T2
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DE
Germany
Prior art keywords
flash
flash memory
memory
macros
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60030765T
Other languages
German (de)
English (en)
Other versions
DE60030765D1 (de
Inventor
Sanjay San Diego JHA
Stephen San Diego SIMMONDS
Jalal Poway ELHUSSEINI
K. Nicholas San Diego YU
Safi San Diego KHAN
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of DE60030765D1 publication Critical patent/DE60030765D1/de
Application granted granted Critical
Publication of DE60030765T2 publication Critical patent/DE60030765T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
  • Storage Device Security (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
DE60030765T 1999-12-17 2000-12-14 Mobiles kommunikationsgerät mit integriertem eingebettetem flash und sram speicher Expired - Lifetime DE60030765T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/465,665 US6407949B1 (en) 1999-12-17 1999-12-17 Mobile communication device having integrated embedded flash and SRAM memory
US465665 1999-12-17
PCT/US2000/034216 WO2001045106A2 (en) 1999-12-17 2000-12-14 Mobile communication device having integrated embedded flash and sram memory

Publications (2)

Publication Number Publication Date
DE60030765D1 DE60030765D1 (de) 2006-10-26
DE60030765T2 true DE60030765T2 (de) 2007-09-13

Family

ID=23848684

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60030765T Expired - Lifetime DE60030765T2 (de) 1999-12-17 2000-12-14 Mobiles kommunikationsgerät mit integriertem eingebettetem flash und sram speicher

Country Status (12)

Country Link
US (2) US6407949B1 (https=)
EP (4) EP1238393B1 (https=)
JP (5) JP4795598B2 (https=)
KR (1) KR20030011067A (https=)
CN (1) CN1411601A (https=)
AT (1) ATE339764T1 (https=)
AU (1) AU2271301A (https=)
CA (4) CA2704893A1 (https=)
DE (1) DE60030765T2 (https=)
ES (1) ES2269213T3 (https=)
HK (1) HK1052248A1 (https=)
WO (1) WO2001045106A2 (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001025053A (ja) 1999-07-09 2001-01-26 Mitsubishi Electric Corp 携帯電話のメモリシステム
US6563746B2 (en) * 1999-11-09 2003-05-13 Fujitsu Limited Circuit for entering/exiting semiconductor memory device into/from low power consumption mode and method of controlling internal circuit at low power consumption mode
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory
US6785806B1 (en) 1999-12-30 2004-08-31 Intel Corporation Bios having macro/effector pairs for hardware initialization
WO2001061692A1 (en) * 2000-02-21 2001-08-23 Trek 2000 International Ltd A portable data storage device
JP2001249471A (ja) 2000-03-07 2001-09-14 Fuji Denki Gazo Device Kk 電子写真用感光体
US6741978B1 (en) * 2000-04-12 2004-05-25 Intel Corporation Accessing file data stored in non-volatile re-programmable semiconductor memories
JP4840553B2 (ja) * 2001-07-31 2011-12-21 日本電気株式会社 無線通信機と、そのブートプログラム書き換え方法及びプログラム
US20030046575A1 (en) * 2001-08-30 2003-03-06 International Business Machines Corporation Digital identity information cards
TW538338B (en) * 2001-12-19 2003-06-21 Yi-Lang Jang Data protection device using addresses
GB2385956B (en) * 2002-03-01 2004-06-02 3Com Corp Key based register locking mechanism
EP1345236B1 (en) * 2002-03-14 2011-05-11 STMicroelectronics Srl A non-volatile memory device
CA2380762A1 (en) * 2002-04-04 2003-10-04 Intrinsyc Software, Inc. Internet-enabled device provisioning, upgrade and recovery mechanism
US8108588B2 (en) * 2003-04-16 2012-01-31 Sandisk Il Ltd. Monolithic read-while-write flash memory device
US7171288B2 (en) * 2003-10-06 2007-01-30 Invacare Corporation Method and apparatus for reprogramming a programmed controller of a power driven wheelchair
US7210002B2 (en) * 2003-11-19 2007-04-24 Qualcomm Incorporated System and method for operating dual bank read-while-write flash
KR100533683B1 (ko) * 2004-02-03 2005-12-05 삼성전자주식회사 플래시 메모리의 데이터 관리 장치 및 방법
US20050177754A1 (en) * 2004-02-09 2005-08-11 Board Of Control Of Michigan Technological University Password management peripheral system and method
CA2558396A1 (en) * 2004-03-04 2005-09-22 Qualcomm Incorporated Early termination of low data rate traffic in a wireless network
JP4768237B2 (ja) * 2004-06-25 2011-09-07 株式会社東芝 携帯可能電子装置及び携帯可能電子装置の制御方法
JP4460967B2 (ja) * 2004-07-23 2010-05-12 株式会社東芝 メモリカード、不揮発性半導体メモリ、及び半導体メモリの制御方法
US20060069849A1 (en) * 2004-09-30 2006-03-30 Rudelic John C Methods and apparatus to update information in a memory
US20060215437A1 (en) * 2005-03-28 2006-09-28 Trika Sanjeev N Recovering from memory imprints
US20100017637A1 (en) 2005-05-25 2010-01-21 Nxp B.V. Portable electronic terminal and method therefor
JP2007011872A (ja) * 2005-07-01 2007-01-18 Toshiba Corp メモリカードとその制御方法
EP1920305A4 (en) 2005-07-21 2011-01-19 Clevx Llc MEMORY LOCKING SYSTEM
JP2007128633A (ja) 2005-10-07 2007-05-24 Matsushita Electric Ind Co Ltd 半導体記憶装置及びこれを備えた送受信システム
US7598166B2 (en) * 2006-09-08 2009-10-06 International Business Machines Corporation Dielectric layers for metal lines in semiconductor chips
US7941587B2 (en) * 2007-09-17 2011-05-10 Cadence Design Systems, Inc Programmable sequence generator for a flash memory controller
KR100971532B1 (ko) * 2008-05-27 2010-07-21 삼성전자주식회사 구동 트랜지스터를 포함하는 반도체 소자
US7761635B1 (en) * 2008-06-20 2010-07-20 Tableau, Llc Bridge device access system
US8209439B2 (en) * 2008-08-25 2012-06-26 Sandisk Il Ltd. Managing multiple concurrent operations with various priority levels in a local storage device
US20100174913A1 (en) * 2009-01-03 2010-07-08 Johnson Simon B Multi-factor authentication system for encryption key storage and method of operation therefor
US9286493B2 (en) * 2009-01-07 2016-03-15 Clevx, Llc Encryption bridge system and method of operation thereof
DE102009014995A1 (de) * 2009-03-26 2010-09-30 Giesecke & Devrient Gmbh Sicherer Speicherzugriff auf einem portablen Datenträger
DE112009004621B4 (de) * 2009-05-04 2018-08-23 Hewlett-Packard Development Company, L.P. Speichervorrichtungs-LöschbefehI mit einem Steuerfeld, das durch eine Anforderer-Vorrichtung steuerbar ist
DE112010005347T5 (de) * 2010-04-12 2012-12-13 Hewlett-Packard Development Company, L.P. Nichtflüchtiger Cache-Speicher
US8495601B2 (en) 2010-06-09 2013-07-23 Lear Corporation Shared memory architecture
US8539472B2 (en) 2010-06-09 2013-09-17 Lear Corporation Method and system of updating shared memory
US8570809B2 (en) 2011-12-02 2013-10-29 Cypress Semiconductor Corp. Flash memory devices and systems
TWI520148B (zh) * 2012-07-05 2016-02-01 慧榮科技股份有限公司 記憶體裝置和記憶體控制方法
CN102855922A (zh) * 2012-09-05 2013-01-02 南京智达康无线通信科技股份有限公司 一种在Flash中记录死机信息的方法
US10185331B2 (en) * 2013-03-11 2019-01-22 Ice Computer, Inc. Modular computer and thermal management
CN105678117B (zh) * 2014-11-19 2019-12-20 比亚迪股份有限公司 单片机闪存程序的安全性保护方法及保护装置及单片机
US10146704B2 (en) * 2016-02-16 2018-12-04 Dell Products L.P. Volatile/non-volatile memory device access provisioning system
US10185664B1 (en) * 2017-06-30 2019-01-22 Vmware, Inc. Method for switching address spaces via an intermediate address space
TWI772069B (zh) * 2021-06-18 2022-07-21 微星科技股份有限公司 電競週邊的發光控制系統與方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02235156A (ja) 1989-03-08 1990-09-18 Canon Inc 情報処理装置
US5245572A (en) * 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
US5473775A (en) * 1991-10-11 1995-12-05 Kabushiki Kaisha Toshiba Personal computer using flash memory as BIOS-ROM
JP2971267B2 (ja) * 1991-10-11 1999-11-02 株式会社東芝 フラッシュメモリをｂｉｏｓ−ｒｏｍとして使用したパーソナルコンピュータ
JP3152535B2 (ja) * 1993-03-18 2001-04-03 富士通株式会社 データ処理装置
US5463766A (en) * 1993-03-22 1995-10-31 Dell Usa, L.P. System and method for loading diagnostics routines from disk
US5522076A (en) * 1993-05-13 1996-05-28 Kabushiki Kaisha Toshiba Computer system having BIOS (basic input/output system)-ROM (Read Only Memory) writing function
US5592641A (en) * 1993-06-30 1997-01-07 Intel Corporation Method and device for selectively locking write access to blocks in a memory array using write protect inputs and block enabled status
JP3464271B2 (ja) * 1994-04-12 2003-11-05 三菱電機株式会社 不揮発性半導体記憶装置
FR2719939A1 (fr) 1994-05-11 1995-11-17 Sgs Thomson Microelectronics Mémoire non volatile modifiable électriquement à interface de commande.
JP3739102B2 (ja) * 1994-07-07 2006-01-25 富士通株式会社 不揮発性半導体記憶装置
JPH0844628A (ja) * 1994-08-03 1996-02-16 Hitachi Ltd 不揮発性メモリ、およびそれを用いたメモリカード、情報処理装置、ならびに不揮発性メモリのソフトウェアライトプロテクト制御方法
DE19536206A1 (de) * 1994-09-30 1996-04-04 Samsung Electronics Co Ltd Intelligente Karte
KR100271701B1 (ko) * 1995-03-15 2000-11-15 가나이 쓰도무 열화진단기능을 구비한 반도체기억장치
JPH0969067A (ja) * 1995-08-31 1997-03-11 Hitachi Ltd 半導体記憶装置、及びデータ処理装置
JPH09114768A (ja) * 1995-10-20 1997-05-02 Toshiba Corp コンピュータシステム
KR100359414B1 (ko) * 1996-01-25 2003-01-24 동경 엘렉트론 디바이스 주식회사 데이타독출/기록방법및그를이용한메모리제어장치및시스템
US6148360A (en) 1996-09-20 2000-11-14 Intel Corporation Nonvolatile writeable memory with program suspend command
US5937063A (en) * 1996-09-30 1999-08-10 Intel Corporation Secure boot
US5987581A (en) * 1997-04-02 1999-11-16 Intel Corporation Configurable address line inverter for remapping memory
US5930826A (en) * 1997-04-07 1999-07-27 Aplus Integrated Circuits, Inc. Flash memory protection attribute status bits held in a flash memory array
US5822244A (en) * 1997-09-24 1998-10-13 Motorola, Inc. Method and apparatus for suspending a program/erase operation in a flash memory
JPH1196078A (ja) * 1997-09-24 1999-04-09 Matsushita Electric Ind Co Ltd 半導体メモリ装置
EP0905704B1 (en) 1997-09-24 2010-03-31 STMicroelectronics S.r.l. Sectored semiconductor memory device with configurable memory sector addresses
JPH11110293A (ja) * 1997-09-29 1999-04-23 Mitsubishi Electric Corp 不揮発性メモリ制御回路
JPH11110294A (ja) * 1997-10-01 1999-04-23 Toshiba Corp マイクロコンピュータ及び情報処理装置
WO1999033057A1 (en) 1997-12-23 1999-07-01 Macronix International Co., Ltd. Technique for increasing endurance of integrated circuit memory
US6088264A (en) * 1998-01-05 2000-07-11 Intel Corporation Flash memory partitioning for read-while-write operation
DE69840877D1 (en) 1998-01-06 2009-07-16 Macronix Int Co Ltd Icher
JP3544859B2 (ja) * 1998-05-11 2004-07-21 富士通株式会社 不揮発性半導体メモリを使用した２次記憶装置
US6205548B1 (en) * 1998-07-31 2001-03-20 Intel Corporation Methods and apparatus for updating a nonvolatile memory
US6356987B1 (en) * 1999-03-10 2002-03-12 Atmel Corporation Microprocessing device having programmable wait states
US6407949B1 (en) * 1999-12-17 2002-06-18 Qualcomm, Incorporated Mobile communication device having integrated embedded flash and SRAM memory

Also Published As

Publication number Publication date
JP4795598B2 (ja) 2011-10-19
US6407949B1 (en) 2002-06-18
ES2269213T3 (es) 2007-04-01
JP2011192290A (ja) 2011-09-29
CA2704894A1 (en) 2001-06-21
ATE339764T1 (de) 2006-10-15
EP1710806A1 (en) 2006-10-11
JP5123410B2 (ja) 2013-01-23
EP1238393A2 (en) 2002-09-11
HK1052248A1 (zh) 2003-09-05
EP1238393B1 (en) 2006-09-13
JP5453471B2 (ja) 2014-03-26
AU2271301A (en) 2001-06-25
DE60030765D1 (de) 2006-10-26
WO2001045106A3 (en) 2002-01-10
EP1713080A1 (en) 2006-10-18
CA2393143A1 (en) 2001-06-21
JP2003517168A (ja) 2003-05-20
JP2014160485A (ja) 2014-09-04
WO2001045106A2 (en) 2001-06-21
EP1713079A1 (en) 2006-10-18
JP2012141993A (ja) 2012-07-26
CA2704893A1 (en) 2001-06-21
EP1710806B1 (en) 2016-02-03
CN1411601A (zh) 2003-04-16
JP2012141994A (ja) 2012-07-26
JP5801436B2 (ja) 2015-10-28
US20010036109A1 (en) 2001-11-01
US6392925B2 (en) 2002-05-21
KR20030011067A (ko) 2003-02-06
EP1713079B1 (en) 2018-03-21
CA2704892A1 (en) 2001-06-21

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