JP4791034B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4791034B2
JP4791034B2 JP2004380704A JP2004380704A JP4791034B2 JP 4791034 B2 JP4791034 B2 JP 4791034B2 JP 2004380704 A JP2004380704 A JP 2004380704A JP 2004380704 A JP2004380704 A JP 2004380704A JP 4791034 B2 JP4791034 B2 JP 4791034B2
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JP
Japan
Prior art keywords
film
sic
etching
semiconductor device
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2004380704A
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English (en)
Japanese (ja)
Other versions
JP2006186244A (ja
Inventor
ゲール グレン
良浩 廣田
雄介 村木
源志 中村
理人 櫛引
尚樹 新藤
昭貴 清水
繁雄 芦垣
良裕 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2004380704A priority Critical patent/JP4791034B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to EP05811466A priority patent/EP1835529A4/en
Priority to US11/794,325 priority patent/US7897498B2/en
Priority to KR1020077014854A priority patent/KR100845453B1/ko
Priority to CNB200580045165XA priority patent/CN100472730C/zh
Priority to PCT/JP2005/021868 priority patent/WO2006070553A1/ja
Priority to TW094146529A priority patent/TW200629404A/zh
Publication of JP2006186244A publication Critical patent/JP2006186244A/ja
Application granted granted Critical
Publication of JP4791034B2 publication Critical patent/JP4791034B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2004380704A 2004-12-28 2004-12-28 半導体装置の製造方法 Expired - Lifetime JP4791034B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004380704A JP4791034B2 (ja) 2004-12-28 2004-12-28 半導体装置の製造方法
US11/794,325 US7897498B2 (en) 2004-12-28 2005-11-29 Method for manufacturing semiconductor device
KR1020077014854A KR100845453B1 (ko) 2004-12-28 2005-11-29 반도체 장치의 제조 방법
CNB200580045165XA CN100472730C (zh) 2004-12-28 2005-11-29 半导体装置的制造方法和制造系统
EP05811466A EP1835529A4 (en) 2004-12-28 2005-11-29 METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
PCT/JP2005/021868 WO2006070553A1 (ja) 2004-12-28 2005-11-29 半導体装置の製造方法
TW094146529A TW200629404A (en) 2004-12-28 2005-12-26 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004380704A JP4791034B2 (ja) 2004-12-28 2004-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2006186244A JP2006186244A (ja) 2006-07-13
JP4791034B2 true JP4791034B2 (ja) 2011-10-12

Family

ID=36614678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004380704A Expired - Lifetime JP4791034B2 (ja) 2004-12-28 2004-12-28 半導体装置の製造方法

Country Status (7)

Country Link
US (1) US7897498B2 (https=)
EP (1) EP1835529A4 (https=)
JP (1) JP4791034B2 (https=)
KR (1) KR100845453B1 (https=)
CN (1) CN100472730C (https=)
TW (1) TW200629404A (https=)
WO (1) WO2006070553A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021550A (ja) * 2007-07-12 2009-01-29 Panasonic Corp 半導体装置の製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5801676B2 (ja) * 2011-10-04 2015-10-28 東京エレクトロン株式会社 半導体装置の製造方法
US20160020246A1 (en) * 2014-07-15 2016-01-21 United Microelectronics Corporation Method for fabricating cmos image sensors and surface treating process thereof
JP6046757B2 (ja) * 2014-09-30 2016-12-21 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除
US20230028297A1 (en) * 2021-07-23 2023-01-26 Micron Technology, Inc. Methods of forming an apparatus comprising silicon carbide materials and related microelectronic devices and systems
JP7329021B2 (ja) * 2021-09-14 2023-08-17 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理システム、およびプログラム

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3279016B2 (ja) * 1993-12-03 2002-04-30 ソニー株式会社 ドライエッチング方法
JP3257245B2 (ja) 1994-05-18 2002-02-18 ソニー株式会社 微細パターンの形成方法
US5762813A (en) * 1995-03-14 1998-06-09 Nippon Steel Corporation Method for fabricating semiconductor device
KR100309225B1 (ko) * 1996-01-26 2002-02-19 모리시타 요이찌 반도체장치의제조장치및드라이에칭방법
US6316167B1 (en) 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6599814B1 (en) * 1999-05-03 2003-07-29 Interuniversitair Microelektronica Centrum (Imec) Method for removal of sic
JP3430091B2 (ja) 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
JP2002252211A (ja) 2001-02-23 2002-09-06 Nec Corp 半導体装置の製造方法
US6777171B2 (en) * 2001-04-20 2004-08-17 Applied Materials, Inc. Fluorine-containing layers for damascene structures
US6667246B2 (en) 2001-12-04 2003-12-23 Matsushita Electric Industrial Co., Ltd. Wet-etching method and method for manufacturing semiconductor device
JP3727299B2 (ja) * 2001-12-04 2005-12-14 松下電器産業株式会社 半導体装置の製造方法
US7887711B2 (en) 2002-06-13 2011-02-15 International Business Machines Corporation Method for etching chemically inert metal oxides
US6759286B2 (en) * 2002-09-16 2004-07-06 Ajay Kumar Method of fabricating a gate structure of a field effect transistor using a hard mask
JP2004165555A (ja) * 2002-11-15 2004-06-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
US20080268655A1 (en) 2008-10-30
CN100472730C (zh) 2009-03-25
US7897498B2 (en) 2011-03-01
TWI368944B (https=) 2012-07-21
CN101107698A (zh) 2008-01-16
JP2006186244A (ja) 2006-07-13
EP1835529A1 (en) 2007-09-19
TW200629404A (en) 2006-08-16
KR100845453B1 (ko) 2008-07-10
EP1835529A4 (en) 2008-10-22
KR20070086783A (ko) 2007-08-27
WO2006070553A1 (ja) 2006-07-06

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