CN100472730C - 半导体装置的制造方法和制造系统 - Google Patents

半导体装置的制造方法和制造系统 Download PDF

Info

Publication number
CN100472730C
CN100472730C CNB200580045165XA CN200580045165A CN100472730C CN 100472730 C CN100472730 C CN 100472730C CN B200580045165X A CNB200580045165X A CN B200580045165XA CN 200580045165 A CN200580045165 A CN 200580045165A CN 100472730 C CN100472730 C CN 100472730C
Authority
CN
China
Prior art keywords
film
semiconductor device
sic
manufacture method
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB200580045165XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101107698A (zh
Inventor
盖尔·格伦
广田良浩
村木雄介
中村源志
栉引理人
新藤尚树
清水昭贵
芦垣繁雄
加藤良裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101107698A publication Critical patent/CN101107698A/zh
Application granted granted Critical
Publication of CN100472730C publication Critical patent/CN100472730C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CNB200580045165XA 2004-12-28 2005-11-29 半导体装置的制造方法和制造系统 Expired - Fee Related CN100472730C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP380704/2004 2004-12-28
JP2004380704A JP4791034B2 (ja) 2004-12-28 2004-12-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
CN101107698A CN101107698A (zh) 2008-01-16
CN100472730C true CN100472730C (zh) 2009-03-25

Family

ID=36614678

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200580045165XA Expired - Fee Related CN100472730C (zh) 2004-12-28 2005-11-29 半导体装置的制造方法和制造系统

Country Status (7)

Country Link
US (1) US7897498B2 (https=)
EP (1) EP1835529A4 (https=)
JP (1) JP4791034B2 (https=)
KR (1) KR100845453B1 (https=)
CN (1) CN100472730C (https=)
TW (1) TW200629404A (https=)
WO (1) WO2006070553A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021550A (ja) * 2007-07-12 2009-01-29 Panasonic Corp 半導体装置の製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5801676B2 (ja) * 2011-10-04 2015-10-28 東京エレクトロン株式会社 半導体装置の製造方法
US20160020246A1 (en) * 2014-07-15 2016-01-21 United Microelectronics Corporation Method for fabricating cmos image sensors and surface treating process thereof
JP6046757B2 (ja) * 2014-09-30 2016-12-21 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除
US20230028297A1 (en) * 2021-07-23 2023-01-26 Micron Technology, Inc. Methods of forming an apparatus comprising silicon carbide materials and related microelectronic devices and systems
JP7329021B2 (ja) * 2021-09-14 2023-08-17 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理システム、およびプログラム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209908A (zh) * 1996-01-26 1999-03-03 松下电子工业株式会社 半导体器件的制造装置
JP2001160547A (ja) * 1999-12-01 2001-06-12 Nec Corp エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
JP2002252211A (ja) * 2001-02-23 2002-09-06 Nec Corp 半導体装置の製造方法
JP2003234325A (ja) * 2001-12-04 2003-08-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004165555A (ja) * 2002-11-15 2004-06-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3279016B2 (ja) * 1993-12-03 2002-04-30 ソニー株式会社 ドライエッチング方法
JP3257245B2 (ja) 1994-05-18 2002-02-18 ソニー株式会社 微細パターンの形成方法
US5762813A (en) * 1995-03-14 1998-06-09 Nippon Steel Corporation Method for fabricating semiconductor device
US6316167B1 (en) 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6599814B1 (en) * 1999-05-03 2003-07-29 Interuniversitair Microelektronica Centrum (Imec) Method for removal of sic
US6777171B2 (en) * 2001-04-20 2004-08-17 Applied Materials, Inc. Fluorine-containing layers for damascene structures
US6667246B2 (en) 2001-12-04 2003-12-23 Matsushita Electric Industrial Co., Ltd. Wet-etching method and method for manufacturing semiconductor device
US7887711B2 (en) 2002-06-13 2011-02-15 International Business Machines Corporation Method for etching chemically inert metal oxides
US6759286B2 (en) * 2002-09-16 2004-07-06 Ajay Kumar Method of fabricating a gate structure of a field effect transistor using a hard mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1209908A (zh) * 1996-01-26 1999-03-03 松下电子工业株式会社 半导体器件的制造装置
JP2001160547A (ja) * 1999-12-01 2001-06-12 Nec Corp エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
JP2002252211A (ja) * 2001-02-23 2002-09-06 Nec Corp 半導体装置の製造方法
JP2003234325A (ja) * 2001-12-04 2003-08-22 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004165555A (ja) * 2002-11-15 2004-06-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JP4791034B2 (ja) 2011-10-12
US20080268655A1 (en) 2008-10-30
US7897498B2 (en) 2011-03-01
TWI368944B (https=) 2012-07-21
CN101107698A (zh) 2008-01-16
JP2006186244A (ja) 2006-07-13
EP1835529A1 (en) 2007-09-19
TW200629404A (en) 2006-08-16
KR100845453B1 (ko) 2008-07-10
EP1835529A4 (en) 2008-10-22
KR20070086783A (ko) 2007-08-27
WO2006070553A1 (ja) 2006-07-06

Similar Documents

Publication Publication Date Title
TW202234140A (zh) 極紫外光(euv)光阻的圖案化顯影方法
CN100514570C (zh) 等离子体蚀刻方法
JP5642001B2 (ja) プラズマエッチング方法
US20140357083A1 (en) Directed block copolymer self-assembly patterns for advanced photolithography applications
TW201826386A (zh) 用於高深寬比結構之移除方法
KR20100028544A (ko) 하드마스크 개구 및 하드마스크 개구에 의한 에칭 프로파일 제어
US20090050603A1 (en) Mask trimming with arl etch
TW201501202A (zh) 電漿蝕刻方法及電漿蝕刻裝置
US7432172B2 (en) Plasma etching method
JP4652140B2 (ja) プラズマエッチング方法、制御プログラム、コンピュータ記憶媒体
TW202242953A (zh) 用於半導體圖案化應用之氧化錫及碳化錫材料
CN100472730C (zh) 半导体装置的制造方法和制造系统
WO2006057236A1 (ja) 基板処理方法および半導体装置の製造方法
JP4775834B2 (ja) エッチング方法
TWI689007B (zh) 蝕刻方法
JP4522892B2 (ja) 微細パターン形成方法
JP6415636B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
US7569478B2 (en) Method and apparatus for manufacturing semiconductor device, control program and computer storage medium
US7501350B2 (en) Plasma processing method
JP5089871B2 (ja) 半導体装置の製造方法
US20250046614A1 (en) SELECTIVE ATOMIC LAYER ETCH OF Si-BASED MATERIALS
KR20070044374A (ko) 반도체 장치의 제조 방법, 반도체 장치의 제조 장치, 제어프로그램 및 컴퓨터 기억 매체
JP2006156992A (ja) プラズマ処理方法
JP2006278517A (ja) プラズマエッチング方法、プラズマエッチング装置、制御プログラム及びコンピュータ記憶媒体

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090325

Termination date: 20141129

EXPY Termination of patent right or utility model