KR100845453B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100845453B1
KR100845453B1 KR1020077014854A KR20077014854A KR100845453B1 KR 100845453 B1 KR100845453 B1 KR 100845453B1 KR 1020077014854 A KR1020077014854 A KR 1020077014854A KR 20077014854 A KR20077014854 A KR 20077014854A KR 100845453 B1 KR100845453 B1 KR 100845453B1
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KR
South Korea
Prior art keywords
film
plasma
sic
etching
high dielectric
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Expired - Lifetime
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KR1020077014854A
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English (en)
Korean (ko)
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KR20070086783A (ko
Inventor
게일 글렌
요시히로 히로타
유스케 무라키
겐지 나카무라
마사토 구시비키
나오키 신도
아키타카 시미즈
시게오 아시가키
요시히로 가토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20070086783A publication Critical patent/KR20070086783A/ko
Application granted granted Critical
Publication of KR100845453B1 publication Critical patent/KR100845453B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01326—Aspects related to lithography, isolation or planarisation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/71—Etching of wafers, substrates or parts of devices using masks for conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020077014854A 2004-12-28 2005-11-29 반도체 장치의 제조 방법 Expired - Lifetime KR100845453B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004380704A JP4791034B2 (ja) 2004-12-28 2004-12-28 半導体装置の製造方法
JPJP-P-2004-00380704 2004-12-28

Publications (2)

Publication Number Publication Date
KR20070086783A KR20070086783A (ko) 2007-08-27
KR100845453B1 true KR100845453B1 (ko) 2008-07-10

Family

ID=36614678

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077014854A Expired - Lifetime KR100845453B1 (ko) 2004-12-28 2005-11-29 반도체 장치의 제조 방법

Country Status (7)

Country Link
US (1) US7897498B2 (https=)
EP (1) EP1835529A4 (https=)
JP (1) JP4791034B2 (https=)
KR (1) KR100845453B1 (https=)
CN (1) CN100472730C (https=)
TW (1) TW200629404A (https=)
WO (1) WO2006070553A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160038688A (ko) * 2014-09-30 2016-04-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009021550A (ja) * 2007-07-12 2009-01-29 Panasonic Corp 半導体装置の製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5801676B2 (ja) * 2011-10-04 2015-10-28 東京エレクトロン株式会社 半導体装置の製造方法
US20160020246A1 (en) * 2014-07-15 2016-01-21 United Microelectronics Corporation Method for fabricating cmos image sensors and surface treating process thereof
CN108885402B (zh) * 2016-02-29 2020-01-14 东京毅力科创株式会社 选择性SiARC去除
US20230028297A1 (en) * 2021-07-23 2023-01-26 Micron Technology, Inc. Methods of forming an apparatus comprising silicon carbide materials and related microelectronic devices and systems
JP7329021B2 (ja) * 2021-09-14 2023-08-17 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理システム、およびプログラム

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JP3279016B2 (ja) * 1993-12-03 2002-04-30 ソニー株式会社 ドライエッチング方法
JP3257245B2 (ja) 1994-05-18 2002-02-18 ソニー株式会社 微細パターンの形成方法
US5762813A (en) * 1995-03-14 1998-06-09 Nippon Steel Corporation Method for fabricating semiconductor device
KR100309225B1 (ko) * 1996-01-26 2002-02-19 모리시타 요이찌 반도체장치의제조장치및드라이에칭방법
US6316167B1 (en) 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6599814B1 (en) * 1999-05-03 2003-07-29 Interuniversitair Microelektronica Centrum (Imec) Method for removal of sic
JP3430091B2 (ja) 1999-12-01 2003-07-28 Ｎｅｃエレクトロニクス株式会社 エッチングマスク及びエッチングマスクを用いたコンタクトホールの形成方法並びにその方法で形成した半導体装置
JP2002252211A (ja) 2001-02-23 2002-09-06 Nec Corp 半導体装置の製造方法
US6777171B2 (en) * 2001-04-20 2004-08-17 Applied Materials, Inc. Fluorine-containing layers for damascene structures
US6667246B2 (en) 2001-12-04 2003-12-23 Matsushita Electric Industrial Co., Ltd. Wet-etching method and method for manufacturing semiconductor device
JP3727299B2 (ja) * 2001-12-04 2005-12-14 松下電器産業株式会社 半導体装置の製造方法
US7887711B2 (en) 2002-06-13 2011-02-15 International Business Machines Corporation Method for etching chemically inert metal oxides
US6759286B2 (en) * 2002-09-16 2004-07-06 Ajay Kumar Method of fabricating a gate structure of a field effect transistor using a hard mask
JP2004165555A (ja) * 2002-11-15 2004-06-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
일본공개특허 2003-234325호(2003.08.22)
일본공개특허 2004-165555호(2004.06.10)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160038688A (ko) * 2014-09-30 2016-04-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR101664153B1 (ko) 2014-09-30 2016-10-10 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체

Also Published As

Publication number Publication date
JP4791034B2 (ja) 2011-10-12
US20080268655A1 (en) 2008-10-30
CN100472730C (zh) 2009-03-25
US7897498B2 (en) 2011-03-01
TWI368944B (https=) 2012-07-21
CN101107698A (zh) 2008-01-16
JP2006186244A (ja) 2006-07-13
EP1835529A1 (en) 2007-09-19
TW200629404A (en) 2006-08-16
EP1835529A4 (en) 2008-10-22
KR20070086783A (ko) 2007-08-27
WO2006070553A1 (ja) 2006-07-06

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