JP4785433B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP4785433B2
JP4785433B2 JP2005171659A JP2005171659A JP4785433B2 JP 4785433 B2 JP4785433 B2 JP 4785433B2 JP 2005171659 A JP2005171659 A JP 2005171659A JP 2005171659 A JP2005171659 A JP 2005171659A JP 4785433 B2 JP4785433 B2 JP 4785433B2
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JP
Japan
Prior art keywords
state imaging
solid
imaging device
gate electrode
light shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005171659A
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English (en)
Japanese (ja)
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JP2006344916A (ja
JP2006344916A5 (enExample
Inventor
俊輔 井上
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Canon Inc
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Canon Inc
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Filing date
Publication date
Priority to JP2005171659A priority Critical patent/JP4785433B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to EP06115090A priority patent/EP1732135B1/en
Priority to US11/448,020 priority patent/US7456453B2/en
Priority to EP10184077A priority patent/EP2267777A3/en
Priority to DE602006019663T priority patent/DE602006019663D1/de
Publication of JP2006344916A publication Critical patent/JP2006344916A/ja
Publication of JP2006344916A5 publication Critical patent/JP2006344916A5/ja
Priority to US12/259,350 priority patent/US7642581B2/en
Application granted granted Critical
Publication of JP4785433B2 publication Critical patent/JP4785433B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2005171659A 2005-06-10 2005-06-10 固体撮像装置 Expired - Fee Related JP4785433B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005171659A JP4785433B2 (ja) 2005-06-10 2005-06-10 固体撮像装置
US11/448,020 US7456453B2 (en) 2005-06-10 2006-06-07 Solid-state image sensing device
EP10184077A EP2267777A3 (en) 2005-06-10 2006-06-07 Solid-state image sensing device
DE602006019663T DE602006019663D1 (de) 2005-06-10 2006-06-07 Festkörper-Bildaufnahmevorrichtung
EP06115090A EP1732135B1 (en) 2005-06-10 2006-06-07 Solid-state image sensing device
US12/259,350 US7642581B2 (en) 2005-06-10 2008-10-28 Solid-state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005171659A JP4785433B2 (ja) 2005-06-10 2005-06-10 固体撮像装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011137717A Division JP5441960B2 (ja) 2011-06-21 2011-06-21 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2006344916A JP2006344916A (ja) 2006-12-21
JP2006344916A5 JP2006344916A5 (enExample) 2008-07-24
JP4785433B2 true JP4785433B2 (ja) 2011-10-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005171659A Expired - Fee Related JP4785433B2 (ja) 2005-06-10 2005-06-10 固体撮像装置

Country Status (4)

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US (2) US7456453B2 (enExample)
EP (2) EP1732135B1 (enExample)
JP (1) JP4785433B2 (enExample)
DE (1) DE602006019663D1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US7655999B2 (en) * 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
JP4680552B2 (ja) * 2004-09-02 2011-05-11 富士フイルム株式会社 固体撮像素子の製造方法
JP2008021875A (ja) * 2006-07-13 2008-01-31 Toshiba Corp 固体撮像装置
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7696546B2 (en) * 2007-01-19 2010-04-13 Panasonic Corporation Solid-state imaging device having wiring layer which includes lamination of silicide layer in order to reduce wiring resistance, and manufacturing method for the same
JP4110192B1 (ja) * 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
US7833819B2 (en) * 2008-07-23 2010-11-16 Aptina Imaging Corporation Method and apparatus for decreasing storage node parasitic charge in active pixel image sensors
US8604521B2 (en) * 2008-08-21 2013-12-10 United Microelectronics Corp. Optically controlled read only memory
JP2012503314A (ja) 2008-09-15 2012-02-02 オーエスアイ．オプトエレクトロニクス．インコーポレイテッド 浅いｎ＋層を有する薄い能動層フィッシュボーン・フォトダイオードとその製造方法
JP5406537B2 (ja) 2009-01-13 2014-02-05 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP5476745B2 (ja) * 2009-03-05 2014-04-23 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101087997B1 (ko) * 2009-04-17 2011-12-01 (주)실리콘화일 광도파관을 구비하는 이미지센서 및 그 제조방법
US8399909B2 (en) * 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP5471174B2 (ja) * 2009-08-28 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5546198B2 (ja) 2009-10-09 2014-07-09 キヤノン株式会社 固体撮像装置
JP5641287B2 (ja) * 2010-03-31 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP2012049431A (ja) * 2010-08-30 2012-03-08 Sony Corp 固体撮像装置および電子機器
JP6095258B2 (ja) * 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP6044847B2 (ja) * 2012-02-03 2016-12-14 ソニー株式会社 半導体装置及び電子機器
JP5971106B2 (ja) * 2012-12-17 2016-08-17 株式会社デンソー 光センサ
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
JP2015012126A (ja) * 2013-06-28 2015-01-19 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器
KR102154184B1 (ko) 2014-03-10 2020-09-09 삼성전자 주식회사 이미지 센서 및 이를 제조하는 방법
KR102290502B1 (ko) 2014-07-31 2021-08-19 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US10580814B2 (en) 2016-03-15 2020-03-03 Sony Corporation Solid-state imaging device having light shielding films, method of manufacturing the same, and electronic apparatus
JP6633746B2 (ja) * 2016-05-17 2020-01-22 富士フイルム株式会社 撮像装置、撮像方法、プログラム、及び非一時的記録媒体
JP6407227B2 (ja) * 2016-10-05 2018-10-17 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP7079739B2 (ja) 2017-02-17 2022-06-02 ソニーセミコンダクタソリューションズ株式会社 撮像素子および電子機器
US10756129B2 (en) * 2019-01-10 2020-08-25 Semiconductor Components Industries, Llc Image sensors having imaging pixels with ring-shaped gates
KR102657686B1 (ko) * 2019-05-13 2024-04-15 주식회사 디비하이텍 이미지 센서 및 제조방법
KR20220025853A (ko) * 2019-06-28 2022-03-03 퀀텀-에스아이 인코포레이티드 광학적 및 전기적 2차 경로 제거
DE112021000802T5 (de) * 2020-01-31 2022-12-29 Sony Semiconductor Solutions Corporation Festkörper-bildsensor

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5204544A (en) 1987-07-03 1993-04-20 Canon Kabushiki Kaisha Photoelectric conversion device with stabilizing electrode
JP2827327B2 (ja) 1989-09-29 1998-11-25 ソニー株式会社 電荷転送装置
JPH03165063A (ja) * 1989-11-24 1991-07-17 Nec Corp 固体撮像素子
US5287903A (en) 1992-07-01 1994-02-22 Emilio Ambasz Carrying bags
JP3219036B2 (ja) * 1997-11-11 2001-10-15 日本電気株式会社 固体撮像装置
JP2000124438A (ja) 1998-10-19 2000-04-28 Toshiba Corp 固体撮像装置
US6333205B1 (en) 1999-08-16 2001-12-25 Micron Technology, Inc. CMOS imager with selectively silicided gates
JP2002252341A (ja) * 2001-02-23 2002-09-06 Fuji Film Microdevices Co Ltd 固体撮像装置
JP2003209230A (ja) * 2002-01-11 2003-07-25 Sony Corp 固体撮像装置およびその製造方法
JP4541666B2 (ja) * 2002-06-20 2010-09-08 三星電子株式会社 イメージセンサ及びその製造方法
KR100508086B1 (ko) * 2002-09-11 2005-08-17 삼성전자주식회사 씨모스 이미지 센서 및 그 제조방법
JP4470364B2 (ja) * 2002-10-17 2010-06-02 ソニー株式会社 固体撮像素子及びカメラ装置
JP3840214B2 (ja) 2003-01-06 2006-11-01 キヤノン株式会社 光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ
US6812539B1 (en) 2003-04-10 2004-11-02 Micron Technology, Inc. Imager light shield
US7250647B2 (en) * 2003-07-03 2007-07-31 Micron Technology, Inc. Asymmetrical transistor for imager device
JP2005086186A (ja) 2003-09-11 2005-03-31 Matsushita Electric Ind Co Ltd 固体撮像装置とその製造方法
JP4578792B2 (ja) 2003-09-26 2010-11-10 富士通セミコンダクター株式会社 固体撮像装置
JP2005109618A (ja) * 2003-09-29 2005-04-21 Renesas Technology Corp 通信用半導体集積回路および携帯端末システム
JP4794821B2 (ja) 2004-02-19 2011-10-19 キヤノン株式会社 固体撮像装置および撮像システム

Also Published As

Publication number Publication date
EP1732135B1 (en) 2011-01-19
EP2267777A3 (en) 2012-04-04
JP2006344916A (ja) 2006-12-21
US20090050945A1 (en) 2009-02-26
US20060278896A1 (en) 2006-12-14
EP2267777A2 (en) 2010-12-29
DE602006019663D1 (de) 2011-03-03
US7642581B2 (en) 2010-01-05
EP1732135A2 (en) 2006-12-13
US7456453B2 (en) 2008-11-25
EP1732135A3 (en) 2007-04-18

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