JP5971106B2 - 光センサ - Google Patents
光センサ Download PDFInfo
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- JP5971106B2 JP5971106B2 JP2012274959A JP2012274959A JP5971106B2 JP 5971106 B2 JP5971106 B2 JP 5971106B2 JP 2012274959 A JP2012274959 A JP 2012274959A JP 2012274959 A JP2012274959 A JP 2012274959A JP 5971106 B2 JP5971106 B2 JP 5971106B2
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- electrode
- light receiving
- light
- receiving element
- semiconductor substrate
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- 230000003287 optical effect Effects 0.000 title claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 13
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 39
- 238000001514 detection method Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
- G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
- G01S3/782—Systems for determining direction or deviation from predetermined direction
- G01S3/783—Systems for determining direction or deviation from predetermined direction using amplitude comparison of signals derived from static detectors or detector systems
- G01S3/7835—Systems for determining direction or deviation from predetermined direction using amplitude comparison of signals derived from static detectors or detector systems using coding masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
(第1実施形態)
図1〜図4に基づいて、第1実施形態に係る光センサ100を説明する。なお、図2及び図3では、構成要素を明瞭とするために、便宜上、後述する遮光膜15と電極30とにハッチングをいれている。また、図3では、後述する絶縁膜12、透光膜14、及び、最上層の遮光膜15を省略し、開口部16を破線で示している。
10a・・・一面
12・・・絶縁膜
20・・・受光部
21・・・受光素子
22・・・リセット素子
30・・・電極
31・・・第1電極
100・・・光センサ
Claims (3)
- 一面(10a)に絶縁膜(12)が形成された半導体基板(10)と、
該半導体基板の一面の表層に形成された受光部(20)と、
前記絶縁膜を介して、前記一面上に形成された電極(30)と、を有する光センサであって、
前記受光部は、光を電荷に変換する受光素子(21)と、該受光素子に蓄積された電荷を放電するリセット素子(22)と、前記受光素子に蓄積された電荷を転送する転送素子(23)と、を有し、
前記電極は、前記リセット素子に制御電圧を印加するための第1電極(31)と、前記転送素子に制御電圧を印加するための第2電極(32)と、を有し、
前記第1電極と前記第2電極それぞれは遮光性を有し、前記絶縁膜上において離れて形成されて電気的に独立しており、
前記受光素子の受光面の形状が、前記第1電極と前記第2電極だけによって規定されていることを特徴とする光センサ。 - 前記半導体基板は、第1導電型であり、
前記半導体基板の一面の表層には、前記第1導電型とは異なる第2導電型の拡散層(11)が複数形成されており、
複数の前記拡散層の内の少なくとも1つは、前記受光素子を構成し、残った複数の前記拡散層の内の少なくとも1つは、配線パターンを構成しており、
前記受光素子を構成する拡散層と前記配線パターンを構成する拡散層とは、所定距離離れ、両者の間の一面上に、前記電極の一部が位置しており、
前記電極に制御電圧が印加されると、前記受光素子を構成する前記拡散層と前記配線パターンを構成する拡散層との間にチャネルが形成され、両者が電気的に接続されることを特徴とする請求項1に記載の光センサ。 - 前記半導体基板の一面上に、透光膜(14)を介して遮光膜(15)が積層され、
前記遮光膜に開口部(16)が形成されており、
前記開口部によって、前記受光素子の受光面に入射する入射光の角度が規定されていることを特徴とする請求項1または請求項2に記載の光センサ。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012274959A JP5971106B2 (ja) | 2012-12-17 | 2012-12-17 | 光センサ |
DE112013006034.5T DE112013006034B4 (de) | 2012-12-17 | 2013-11-05 | Optischer Sensor |
CN201380056008.3A CN104756254B (zh) | 2012-12-17 | 2013-11-05 | 光传感器 |
PCT/JP2013/006516 WO2014097528A1 (ja) | 2012-12-17 | 2013-11-05 | 光センサ |
US14/422,754 US9224883B2 (en) | 2012-12-17 | 2013-11-05 | Optical sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012274959A JP5971106B2 (ja) | 2012-12-17 | 2012-12-17 | 光センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014120626A JP2014120626A (ja) | 2014-06-30 |
JP5971106B2 true JP5971106B2 (ja) | 2016-08-17 |
Family
ID=50977897
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012274959A Active JP5971106B2 (ja) | 2012-12-17 | 2012-12-17 | 光センサ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9224883B2 (ja) |
JP (1) | JP5971106B2 (ja) |
CN (1) | CN104756254B (ja) |
DE (1) | DE112013006034B4 (ja) |
WO (1) | WO2014097528A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6518076B2 (ja) * | 2015-02-16 | 2019-05-22 | エイブリック株式会社 | 受光素子を有する光検出半導体装置 |
JP2016161458A (ja) | 2015-03-03 | 2016-09-05 | 株式会社デンソー | 光センサ |
JP6631420B2 (ja) | 2016-06-28 | 2020-01-15 | 株式会社デンソー | 光センサ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930007532B1 (ko) | 1990-07-12 | 1993-08-12 | 금성일렉트론 주식회사 | Soi 구조를 이용한 3차원 ccd 영상소자 및 그 제조방법 |
JP3319419B2 (ja) * | 1999-02-24 | 2002-09-03 | 日本電気株式会社 | 固体撮像装置 |
JP2003258234A (ja) * | 2002-02-28 | 2003-09-12 | Sony Corp | 固体撮像素子および固体撮像素子の駆動方法 |
DE10218160C1 (de) | 2002-04-23 | 2003-12-24 | Elmos Semiconductor Ag | Vorrichtung zur Ermittlung des Einfallwinkels einer Strahlung auf eine Strahlungseinfallfläche |
JP4794821B2 (ja) | 2004-02-19 | 2011-10-19 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US7432491B2 (en) | 2005-05-06 | 2008-10-07 | Micron Technology, Inc. | Pixel with spatially varying sensor positions |
JP4785433B2 (ja) * | 2005-06-10 | 2011-10-05 | キヤノン株式会社 | 固体撮像装置 |
JP4193874B2 (ja) | 2006-05-25 | 2008-12-10 | ソニー株式会社 | 固体撮像装置とその製造方法、及びカメラモジュール |
JP5406537B2 (ja) | 2009-01-13 | 2014-02-05 | キヤノン株式会社 | 光電変換装置、撮像システム、及び光電変換装置の製造方法 |
CN103038883B (zh) | 2010-09-10 | 2017-04-26 | 株式会社电装 | 光学传感器 |
JP5429201B2 (ja) * | 2011-01-27 | 2014-02-26 | 株式会社デンソー | 光センサ |
JP5637384B2 (ja) | 2010-12-15 | 2014-12-10 | ソニー株式会社 | 固体撮像素子および駆動方法、並びに電子機器 |
-
2012
- 2012-12-17 JP JP2012274959A patent/JP5971106B2/ja active Active
-
2013
- 2013-11-05 CN CN201380056008.3A patent/CN104756254B/zh active Active
- 2013-11-05 WO PCT/JP2013/006516 patent/WO2014097528A1/ja active Application Filing
- 2013-11-05 DE DE112013006034.5T patent/DE112013006034B4/de active Active
- 2013-11-05 US US14/422,754 patent/US9224883B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2014097528A1 (ja) | 2014-06-26 |
DE112013006034T5 (de) | 2015-09-10 |
CN104756254A (zh) | 2015-07-01 |
US9224883B2 (en) | 2015-12-29 |
CN104756254B (zh) | 2017-05-17 |
DE112013006034B4 (de) | 2022-09-01 |
US20150221786A1 (en) | 2015-08-06 |
JP2014120626A (ja) | 2014-06-30 |
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