JP2011129785A - 固体撮像装置 - Google Patents
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Abstract
【解決手段】 受光部は、第1受光部と、半導体基板裏面を基準として前記第1受光部より深い位置に配された第2受光部とを含み、第1受光部は、光電変換によって発生した電荷が、信号電荷として収集される第1導電型の第1半導体領域を含む。読出し部は前記第1半導体領域に収集された電荷が半導体基板表面側に読み出されるように、深さ方向に延在して配された第1導電型の第2半導体領域を含む。第2半導体領域に入射する光量を低減する手段を有する。
【選択図】 図1
Description
隣接する画素のN型半導体領域103B同士の間隔が短くなれば、ポテンシャル障壁の平坦な部分が少なくなり、電子はN型半導体領域103Gよりも、N型半導体領域103Bに到達しやすくなる。つまり同一画素内での混色を抑制することが可能となる。
このような構成によれば、N型半導体領域105Bに入射する光量を減らすことが可能となるので、N型半導体領域105Bの裏面を基準として深い位置での電荷の発生を抑制することができる。したがって、色分離特性が向上する。
本実施例の構成に加えて、実施例3の遮光部や、実施例4の光導波路を組み合わせることで、色分離特性の効果がさらに高まる。
102 回路部
103 N型半導体領域
104 P型半導体領域
105 N型半導体領域
106 マイクロレンズ
107 遮光部
108 光導波路
109 コア部
110 クラッド部
111 柱状マイクロレンズ
112 エアギャップ部
113 空乏層
Claims (10)
- 受光部と読出し部とを含む複数の画素が配された半導体基板と、
前記半導体基板の第1主面側に配された配線とを有し、
前記半導体基板の第1主面とは反対側の第2主面から、前記受光部へ光が入射する裏面入射型の固体撮像装置において、
前記受光部が、第1受光部と、前記第2主面を基準として前記第1受光部より深い位置に配された第2受光部とを含んで構成され、
前記第1受光部が、光電変換によって発生した電荷が信号電荷として収集される、第1導電型の第1半導体領域を備え、
前記読出し部が、前記第1半導体領域に収集された電荷が前記第1主面側に読み出されるように前記半導体基板の深さ方向に延在して配された、第1導電型の第2半導体領域を備え、
前記第2半導体領域に入射する光量を低減し、前記第2半導体領域に入射する光量の低減率が、前記第1半導体領域に入射する光量の低減率より大きい光量低減手段を有する
ことを特徴とする固体撮像装置。 - 前記半導体基板の第2主面側に、光を集光するマイクロレンズが配され、
前記マイクロレンズの端部が、深さ方向に投影したときに前記第2半導体領域に重なる位置に配されたことで、前記光量低減手段として機能すること
を特徴とする請求項1に記載の固体撮像装置。 - 前記マイクロレンズの端部が、深さ方向に投影したときに、前記複数の画素のうち、互いに隣接する2つの画素にそれぞれ含まれる第1半導体領域に対応した前記第2半導体領域に重なる位置に配されたこと
を特徴とする請求項2に記載の固体撮像装置。 - 前記半導体基板の第2主面側に、光を集光する複数のマイクロレンズが配され、
前記複数のマイクロレンズが端部の一部を共有するように連続的に配され、
該共有された端部が、深さ方向に投影したときに前記第2半導体領域に重なる位置に配されたことで、前記光量低減手段として機能すること
を特徴とする請求項1に記載の固体撮像装置。 - 前記半導体基板の第2主面側に、画素に対応して柱状のマイクロレンズが配され、
隣接する画素に対応するマイクロレンズがエアギャップを介して配置され、
前記エアギャップが、深さ方向に投影したときに前記第2半導体領域に重なる位置に配されたことで、前記柱状のマイクロレンズが前記光量低減手段として機能すること
を特徴とする請求項1に記載の固体撮像装置。 - 前記半導体基板の第2主面側に、光を遮光する遮光部が配され、
前記遮光部が、深さ方向に投影したときに前記第2半導体領域に重なる位置に配されたことで、前記光量低減手段として機能すること
を特徴とする請求項1乃至請求項5のいずれか一項に記載の固体撮像装置。 - 前記半導体基板の第2主面側に、クラッド部とコア部を有する光導波路が配され、
前記クラッド部が、深さ方向に投影したときに前記第2半導体領域に重なる位置に配されたことで、前記光導波路が前記光量低減手段として機能すること
を特徴とする請求項1乃至請求項6のいずれか一項に記載の固体撮像装置。 - 前記複数の画素のうち、隣接する画素にそれぞれ含まれる第1半導体領域どうしが、電気的に導通していること
を特徴とする請求項1乃至請求項7のいずれか一項に記載の固体撮像装置。 - 前記受光部が、前記第1受光部と前記第2受光部との間の深さに配された第3受光部をさらに含み、
前記第3受光部が、光電変換によって発生した電荷が、信号電荷として収集される第1導電型の第3半導体領域を備え、
前記読出し部が、前記第3半導体領域に収集された電荷が前記第1主面側に読み出されるように前記半導体基板の深さ方向に延在して配された、第1導電型の第4半導体領域を備え、
前記第4半導体領域に入射する光量を低減し、前記第4半導体領域に入射する光量の低減率が、前記第3半導体領域に入射する光量の低減率より大きい光量低減手段を有する
ことを特徴とする請求項1乃至請求項8のいずれか一項に記載の固体撮像装置。 - 請求項1乃至請求項9のいずれか一項に記載の固体撮像装置と、
前記固体撮像装置から出力された撮像信号を処理する信号処理部とを有した撮像システム。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009288461A JP5566093B2 (ja) | 2009-12-18 | 2009-12-18 | 固体撮像装置 |
CN201510124447.4A CN104701335A (zh) | 2009-12-18 | 2010-12-13 | 固态图像拾取设备 |
CN201080056463.XA CN102652359B (zh) | 2009-12-18 | 2010-12-13 | 固态图像拾取设备 |
PCT/JP2010/007224 WO2011074234A1 (en) | 2009-12-18 | 2010-12-13 | Solid-state image pickup apparatus |
US13/515,786 US9245919B2 (en) | 2009-12-18 | 2010-12-13 | Solid-state image pickup apparatus |
US14/972,510 US9865631B2 (en) | 2009-12-18 | 2015-12-17 | Solid-state image pickup apparatus |
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JP2009288461A JP5566093B2 (ja) | 2009-12-18 | 2009-12-18 | 固体撮像装置 |
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JP2014124750A Division JP5885779B2 (ja) | 2014-06-17 | 2014-06-17 | 固体撮像装置 |
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JP2011129785A5 JP2011129785A5 (ja) | 2013-01-17 |
JP5566093B2 JP5566093B2 (ja) | 2014-08-06 |
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Cited By (5)
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JP2013098534A (ja) * | 2011-10-28 | 2013-05-20 | Ti-Shiue Biotech Inc | 分子検出および識別に応用する多接合フォトダイオード、およびその製造方法 |
US9300884B2 (en) | 2011-10-03 | 2016-03-29 | Canon Kabushiki Kaisha | Solid-state image sensor and camera having a plurality of photoelectric converters under a microlens |
JPWO2016147837A1 (ja) * | 2015-03-13 | 2017-12-21 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、駆動方法、および電子機器 |
JP2020092253A (ja) * | 2018-10-02 | 2020-06-11 | フォベオン・インコーポレーテッド | 表面から検知器への改善された光伝送を有する撮像アレイ |
JP2022089852A (ja) * | 2017-01-19 | 2022-06-16 | ソニーセミコンダクタソリューションズ株式会社 | 測距素子 |
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JP4759590B2 (ja) | 2008-05-09 | 2011-08-31 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP5566093B2 (ja) * | 2009-12-18 | 2014-08-06 | キヤノン株式会社 | 固体撮像装置 |
JP2015076569A (ja) | 2013-10-11 | 2015-04-20 | ソニー株式会社 | 撮像装置およびその製造方法ならびに電子機器 |
EP2940504B1 (en) | 2014-04-25 | 2023-06-07 | Personal Genomics, Inc. | Optical sensor |
JP6444066B2 (ja) * | 2014-06-02 | 2018-12-26 | キヤノン株式会社 | 光電変換装置および撮像システム |
JP6746301B2 (ja) | 2015-11-30 | 2020-08-26 | キヤノン株式会社 | 撮像装置の駆動方法、撮像装置、撮像システム |
CN110164909B (zh) * | 2018-04-24 | 2021-03-16 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
US20220223643A1 (en) | 2021-01-14 | 2022-07-14 | Imec Vzw | Image sensor comprising stacked photo-sensitive devices |
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JP5566093B2 (ja) | 2014-08-06 |
US9865631B2 (en) | 2018-01-09 |
CN102652359B (zh) | 2015-04-08 |
WO2011074234A1 (en) | 2011-06-23 |
CN102652359A (zh) | 2012-08-29 |
US20160104728A1 (en) | 2016-04-14 |
US9245919B2 (en) | 2016-01-26 |
CN104701335A (zh) | 2015-06-10 |
US20120298841A1 (en) | 2012-11-29 |
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