JP6631420B2 - 光センサ - Google Patents
光センサ Download PDFInfo
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- JP6631420B2 JP6631420B2 JP2016127869A JP2016127869A JP6631420B2 JP 6631420 B2 JP6631420 B2 JP 6631420B2 JP 2016127869 A JP2016127869 A JP 2016127869A JP 2016127869 A JP2016127869 A JP 2016127869A JP 6631420 B2 JP6631420 B2 JP 6631420B2
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- detection
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- 230000003287 optical effect Effects 0.000 title claims description 28
- 238000001514 detection method Methods 0.000 claims description 139
- 238000009826 distribution Methods 0.000 claims description 116
- 238000012937 correction Methods 0.000 claims description 32
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910019974 CrSi Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0266—Field-of-view determination; Aiming or pointing of a photometer; Adjusting alignment; Encoding angular position; Size of the measurement area; Position tracking; Photodetection involving different fields of view for a single detector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/06—Restricting the angle of incident light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
- G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
- G01J1/1626—Arrangements with two photodetectors, the signals of which are compared
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
以下、本発明の第1実施形態について図を参照して説明する。本実施形態に係る光センサは、例えば車両に搭載されて車外から車内に入射する光を検出するために利用される。図1に示されるように、光センサ10は、ICチップ20及びマイクロコンピュータ60(以下、マイコン60という)を備えている。
本実施形態では、第1実施形態と異なる部分について説明する。本実施形態では、記憶部62は、複数の基準となる指向特性の基準光毎に基準分布を複数記憶している。例えば、記憶部62は、上記の仰角Aの基準となる指向特性に対応した基準分布の他に、他の仰角の基準となる指向特性に対応した基準分布を記憶している。また、記憶部62は、検出部21への光の入射方向に応じて基準分布に含まれる不要な光を除去するための補正係数を複数の基準分布毎に記憶している。
本実施形態では、第1、第2実施形態と異なる部分について説明する。上記各実施形態では、演算部64が、補正係数によって基準分布を補正する機能を有していたが、本実施形態では、記憶部62には補正係数が記憶されていない。したがって、判定部63は、通信部22、61を介して検出信号を入力して検出部21が受光した光の強度の検出分布を取得する機能と、記憶部62から基準分布を取得する機能を有する。
本実施形態では、第3実施形態と異なる部分について説明する。本実施形態では、記憶部62は、複数の基準となる指向特性の基準光毎に基準分布を複数記憶している。例えば、記憶部62は、上記の仰角Aの基準となる指向特性に対応した基準分布の他に、他の仰角の基準となる指向特性に対応した基準分布を記憶している。
上記各実施形態で示された光センサ10の構成は一例であり、上記で示した構成に限定されることなく、本発明を実現できる他の構成とすることもできる。例えば、第1、第2実施形態では、判定部63と演算部64とが一体化されていても良い。
24〜36 検出素子
37 遮光部
61 記憶部
62 判定部
63 演算部
Claims (4)
- 受光した光の強度を検出信号として出力する複数の検出素子(24〜36)と、前記複数の検出素子に対する光の入射角度を規定する遮光部(37)と、を有する検出部(21)と、
基準となる指向特性の基準光が前記検出部に照射されたことにより前記検出部によって検出された光の強度の分布を示す基準分布を記憶した記憶部(62)と、
前記複数の検出素子から前記検出信号を入力して前記受光した光の強度の検出分布を取得し、前記記憶部から前記基準分布を入力し、前記基準分布に対する前記検出分布の偏差を求め、前記偏差に基づいて前記受光した光の指向特性を取得する演算部(63、64)と、
を備えている光センサ。 - 前記記憶部は、前記検出部への光の入射方向に応じて前記基準分布に含まれる不要な光を除去するための補正係数を記憶し、
前記演算部は、前記検出分布に基づいて前記入射方向を把握すると共に、前記記憶部から前記入射方向に対応する前記補正係数を入力し、前記補正係数によって前記基準分布を補正した後に、前記偏差を求める請求項1に記載の光センサ。 - 前記記憶部は、複数の基準となる指向特性の基準光毎に前記基準分布を複数記憶しており、
前記演算部は、前記複数の基準分布のうち前記検出部が検出すべき指向特性に応じた基準分布を前記記憶部から入力して前記偏差を求める請求項1に記載の光センサ。 - 前記記憶部は、複数の基準となる指向特性の基準光毎に前記基準分布を複数記憶すると共に、前記検出部への光の入射方向に応じて前記基準分布に含まれる不要な光を除去するための補正係数を前記複数の基準分布毎に記憶しており、
前記演算部は、前記検出分布から前記入射方向を把握すると共に、前記複数の基準分布のうち前記検出部が検出すべき指向特性に応じた基準分布及び当該基準分布に対応した補正係数を前記記憶部から入力し、当該補正係数によって前記基準分布を補正した後に、前記偏差を求める請求項1に記載の光センサ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016127869A JP6631420B2 (ja) | 2016-06-28 | 2016-06-28 | 光センサ |
US16/087,671 US10663343B2 (en) | 2016-06-28 | 2017-05-22 | Optical sensor for a directivity characteristic calculation of received light on the basis of a deviation of a detected intensity distribution from a referenced intensity distribution |
DE112017003242.3T DE112017003242T5 (de) | 2016-06-28 | 2017-05-22 | Optischer sensor |
PCT/JP2017/018959 WO2018003343A1 (ja) | 2016-06-28 | 2017-05-22 | 光センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016127869A JP6631420B2 (ja) | 2016-06-28 | 2016-06-28 | 光センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018004317A JP2018004317A (ja) | 2018-01-11 |
JP6631420B2 true JP6631420B2 (ja) | 2020-01-15 |
Family
ID=60787098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016127869A Expired - Fee Related JP6631420B2 (ja) | 2016-06-28 | 2016-06-28 | 光センサ |
Country Status (4)
Country | Link |
---|---|
US (1) | US10663343B2 (ja) |
JP (1) | JP6631420B2 (ja) |
DE (1) | DE112017003242T5 (ja) |
WO (1) | WO2018003343A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI759301B (zh) | 2016-05-24 | 2022-04-01 | 美商安美基公司 | 聚乙二醇化卡非佐米化合物 |
WO2022196257A1 (ja) * | 2021-03-16 | 2022-09-22 | 株式会社小糸製作所 | 受光素子、光検出装置及び測定装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491727A (en) * | 1981-07-01 | 1985-01-01 | Ramot University Authority For Applied Research | Solar radiation sensor and system including same for measuring solar radiation distribution |
JPH10221162A (ja) * | 1997-02-12 | 1998-08-21 | Nippon Signal Co Ltd:The | 多方向検知照度センサー及びそれを用いた撮像装置 |
JP3965999B2 (ja) * | 2001-02-02 | 2007-08-29 | 株式会社デンソー | 車両の日射検出装置及びそれを用いた車両用空調装置 |
JP4641363B2 (ja) * | 2001-07-06 | 2011-03-02 | 本田技研工業株式会社 | 日射センサ |
JP2005249478A (ja) | 2004-03-02 | 2005-09-15 | Denso Corp | 光センサ |
JP2008224622A (ja) * | 2007-03-15 | 2008-09-25 | Ricoh Co Ltd | 光量分布測定方法 |
JP2009109469A (ja) * | 2007-10-30 | 2009-05-21 | Watanabe Denki Kogyo Kk | 車両用ヘッドライトの照射光測定方法とその装置 |
WO2010097984A1 (ja) * | 2009-02-27 | 2010-09-02 | シャープ株式会社 | 光センサおよびこれを備えた表示装置 |
JP5953229B2 (ja) | 2009-06-12 | 2016-07-20 | マイクロニクス, インコーポレイテッド | マイクロ流体デバイス内でオンボード試薬を脱水保存する組成物および方法 |
DE112011103016B4 (de) | 2010-09-10 | 2020-11-19 | Denso Corporation | Optischer Sensor |
JP5644395B2 (ja) * | 2010-11-10 | 2014-12-24 | 株式会社デンソー | 光センサ装置 |
JP2013221894A (ja) * | 2012-04-18 | 2013-10-28 | Denso Corp | 光センサ |
JP5971106B2 (ja) | 2012-12-17 | 2016-08-17 | 株式会社デンソー | 光センサ |
JP6390455B2 (ja) * | 2015-02-04 | 2018-09-19 | 株式会社デンソー | 光センサ及びその製造方法 |
US9820355B2 (en) * | 2015-04-16 | 2017-11-14 | Apple Inc. | Electronic device with directional ambient light sensor |
-
2016
- 2016-06-28 JP JP2016127869A patent/JP6631420B2/ja not_active Expired - Fee Related
-
2017
- 2017-05-22 DE DE112017003242.3T patent/DE112017003242T5/de not_active Withdrawn
- 2017-05-22 WO PCT/JP2017/018959 patent/WO2018003343A1/ja active Application Filing
- 2017-05-22 US US16/087,671 patent/US10663343B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20190101441A1 (en) | 2019-04-04 |
JP2018004317A (ja) | 2018-01-11 |
WO2018003343A1 (ja) | 2018-01-04 |
DE112017003242T5 (de) | 2019-03-28 |
US10663343B2 (en) | 2020-05-26 |
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