JP4780800B2 - 基板表面の処理方法 - Google Patents
基板表面の処理方法 Download PDFInfo
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- JP4780800B2 JP4780800B2 JP2007504241A JP2007504241A JP4780800B2 JP 4780800 B2 JP4780800 B2 JP 4780800B2 JP 2007504241 A JP2007504241 A JP 2007504241A JP 2007504241 A JP2007504241 A JP 2007504241A JP 4780800 B2 JP4780800 B2 JP 4780800B2
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims 1
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Electrodes Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (13)
- 液浴を使用してシリコンウエハの片面側を湿潤化学的処理するための方法であって、
前記処理の間、下面の全表面が処理されるように運搬手段上に置かれた前記ウエハの下面は、前記液浴にある液体の中を通るか又は液体の上にある状態で運搬され、
前記下面と前記液体の表面との位置関係は前記ウエハの端部にメニスカスが形成されるように位置決めされ、前記運搬手段は前記液浴の中に位置決めされ、かつ、処理されない前記ウエハの上面が常に前記液体のレベルよりも上に位置決めされている方法。 - 液浴を使用してシリコンウエハの片面側を湿潤化学的処理するための方法であって、
前記処理の間、前記ウエハは運搬手段上に置かれ、
前記下面と前記液浴にある液体の表面との間にメニスカスが形成されることにより、下面と接触する液体のレベルは、前記下面と接触しない液体のレベルよりも上に維持されるように、前記液浴にある液体を通るか又は液体の上にある状態で前記下面が処理されるように運搬され、
処理されない前記ウエハの上面が常に前記液体のレベルよりも上に位置決めされている方法。 - 前記ウエハの前記上面が、前記処理の間、保護されていないことを特徴とする請求項1または2に記載の方法。
- 前記シリコンウエハの端部も処理されることを特徴とする請求項1〜3のいずれか1項に記載の方法。
- 前記運搬手段が、ベルトまたはロールの形態で提供されることを特徴とする請求項1〜4のいずれか1項に記載の方法。
- 前記シリコンウエハがワンススルー方式で連続的に加工されることを特徴とする請求項1〜5のいずれか1項に記載の方法。
- 前記シリコンウエハの前記下面が前記液浴内に下げられることを特徴とする請求項6に記載の方法。
- 生産ラインの一環として、前記シリコンウエハが前記液浴にある処理液を通ってまたは処理液の上を水平に運搬されることを特徴とする請求項1〜6のいずれか1項に記載の方法。
- 使用される前記液浴がタンクであり、その周辺端部が前記液体のレベルよりも低いことを特徴とする請求項1〜8のいずれか1項に記載の方法。
- 前記処理がエッチング工程であることを特徴とする請求項1〜9のいずれか1項に記載の方法。
- 前記エッチングが、KOH、HF、HNO3、O3を伴ったHF、および/または酸化剤を伴ったHFを含む液体組成物中で行われることを特徴とする請求項10に記載の方法。
- 前記酸化剤が酸化性酸であることを特徴とする請求項11に記載の方法。
- 液体組成物が、前記エッチング中に形成されたガスを結合するために、少なくとも1種の添加剤を含むことを特徴とする請求項11または12に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/DE2004/000597 WO2005093788A1 (de) | 2004-03-22 | 2004-03-22 | Verfahren zur behandlung von substratoberflächen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007529912A JP2007529912A (ja) | 2007-10-25 |
JP4780800B2 true JP4780800B2 (ja) | 2011-09-28 |
Family
ID=35056453
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007504241A Expired - Lifetime JP4780800B2 (ja) | 2004-03-22 | 2004-03-22 | 基板表面の処理方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7943526B2 (ja) |
EP (1) | EP1733418B2 (ja) |
JP (1) | JP4780800B2 (ja) |
KR (1) | KR101046287B1 (ja) |
CN (1) | CN101015037B (ja) |
AT (1) | ATE480868T1 (ja) |
DE (2) | DE112004002879A5 (ja) |
ES (1) | ES2352674T3 (ja) |
WO (1) | WO2005093788A1 (ja) |
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DE102005062528A1 (de) * | 2005-12-16 | 2007-06-21 | Gebr. Schmid Gmbh & Co. | Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten |
DE102006033354B4 (de) * | 2006-07-19 | 2012-01-12 | Höllmüller Maschinenbau GmbH | Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten |
DE102006049488A1 (de) | 2006-10-17 | 2008-04-30 | Höllmüller Maschinenbau GmbH | Vorrichtung zum Behandeln von flachen, zerbrechlichen Substraten |
DE102007004060B4 (de) * | 2007-01-22 | 2013-03-21 | Gp Solar Gmbh | Verwendung einer Ätzlösung aufweisend Wasser, Salpetersäure und Schwefelsäure und Ätzverfahren |
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DE102008037404A1 (de) * | 2008-09-30 | 2010-04-01 | Schott Solar Ag | Verfahren zur chemischen Behandlung eines Substrats |
EP2481080B1 (de) * | 2009-09-22 | 2018-10-24 | RENA Technologies GmbH | Verfahren und vorrichtung zum rückätzen einer halbleiterschicht |
DE102009050845A1 (de) * | 2009-10-19 | 2011-04-21 | Gebr. Schmid Gmbh & Co. | Verfahren und Vorrichtung zur Behandlung einer Substratoberfläche eines Substrats |
WO2011072706A1 (de) | 2009-12-18 | 2011-06-23 | Rena Gmbh | Verfahren zum abtragen von substratschichten |
DE102009059704A1 (de) | 2009-12-18 | 2011-06-22 | RENA GmbH, 78148 | Vorrichtung zum Transportieren von flachen Gegenständen |
WO2012020274A1 (en) | 2010-08-10 | 2012-02-16 | Rena Gmbh | Process and apparatus for texturizing a flat semiconductor substrate |
TW201218407A (en) | 2010-10-22 | 2012-05-01 | Wakom Semiconductor Corp | Method for fabricating a silicon wafer solar cell |
CN102185011A (zh) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | 太阳能电池片的制绒方法 |
CN103620800A (zh) | 2011-04-19 | 2014-03-05 | 弗劳恩霍弗实用研究促进协会 | 用于制造太阳能电池的方法 |
CN102891078A (zh) | 2011-07-18 | 2013-01-23 | 商先创光伏股份有限公司 | 用于衬底圆片的单面湿处理的装置和方法 |
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2004
- 2004-03-22 JP JP2007504241A patent/JP4780800B2/ja not_active Expired - Lifetime
- 2004-03-22 KR KR1020067021686A patent/KR101046287B1/ko active IP Right Grant
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- 2004-03-22 WO PCT/DE2004/000597 patent/WO2005093788A1/de active Application Filing
- 2004-03-22 AT AT04722226T patent/ATE480868T1/de active
- 2004-03-22 DE DE112004002879T patent/DE112004002879A5/de not_active Withdrawn
- 2004-03-22 EP EP04722226.0A patent/EP1733418B2/de not_active Expired - Lifetime
- 2004-03-22 ES ES04722226T patent/ES2352674T3/es not_active Expired - Lifetime
- 2004-03-22 DE DE502004011649T patent/DE502004011649D1/de not_active Expired - Lifetime
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Also Published As
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US20080233760A1 (en) | 2008-09-25 |
WO2005093788A1 (de) | 2005-10-06 |
EP1733418B1 (de) | 2010-09-08 |
ES2352674T3 (es) | 2011-02-22 |
CN101015037B (zh) | 2010-04-21 |
DE112004002879A5 (de) | 2007-05-24 |
DE502004011649D1 (de) | 2010-10-21 |
EP1733418B2 (de) | 2018-01-17 |
EP1733418A1 (de) | 2006-12-20 |
JP2007529912A (ja) | 2007-10-25 |
US7943526B2 (en) | 2011-05-17 |
CN101015037A (zh) | 2007-08-08 |
ATE480868T1 (de) | 2010-09-15 |
KR101046287B1 (ko) | 2011-07-04 |
KR20070005685A (ko) | 2007-01-10 |
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