JP4731655B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4731655B2
JP4731655B2 JP2000033838A JP2000033838A JP4731655B2 JP 4731655 B2 JP4731655 B2 JP 4731655B2 JP 2000033838 A JP2000033838 A JP 2000033838A JP 2000033838 A JP2000033838 A JP 2000033838A JP 4731655 B2 JP4731655 B2 JP 4731655B2
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Japan
Prior art keywords
film
tft
semiconductor film
region
driver circuit
Prior art date
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Expired - Fee Related
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JP2000033838A
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English (en)
Japanese (ja)
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JP2000299470A5 (enrdf_load_stackoverflow
JP2000299470A (ja
Inventor
舜平 山崎
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000033838A priority Critical patent/JP4731655B2/ja
Publication of JP2000299470A publication Critical patent/JP2000299470A/ja
Publication of JP2000299470A5 publication Critical patent/JP2000299470A5/ja
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Publication of JP4731655B2 publication Critical patent/JP4731655B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2000033838A 1999-02-12 2000-02-10 半導体装置の作製方法 Expired - Fee Related JP4731655B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000033838A JP4731655B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999034513 1999-02-12
JP11-34513 1999-02-12
JP3451399 1999-02-12
JP2000033838A JP4731655B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2000299470A JP2000299470A (ja) 2000-10-24
JP2000299470A5 JP2000299470A5 (enrdf_load_stackoverflow) 2007-03-08
JP4731655B2 true JP4731655B2 (ja) 2011-07-27

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Family Applications (1)

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JP2000033838A Expired - Fee Related JP4731655B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

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JP (1) JP4731655B2 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003050405A (ja) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
JP4439794B2 (ja) * 2001-09-10 2010-03-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3949564B2 (ja) 2001-11-30 2007-07-25 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
TWI276179B (en) * 2002-04-15 2007-03-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device having semiconductor films of different crystallinity, substrate unit, and liquid crystal display, and their manufacturing method
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US7220627B2 (en) 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
JP4940532B2 (ja) * 2003-09-25 2012-05-30 カシオ計算機株式会社 Ｃｍｏｓトランジスタの製造方法
JP4573091B2 (ja) * 2003-10-31 2010-11-04 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに表示装置およびその製造方法
US8334536B2 (en) 2007-03-16 2012-12-18 Samsung Display Co., Ltd. Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same
JP2011066243A (ja) 2009-09-17 2011-03-31 Panasonic Corp 結晶シリコン膜の形成方法、それを用いた薄膜トランジスタおよび表示装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208635A (ja) * 1989-02-08 1990-08-20 Seiko Epson Corp 半導体装置
JP2925629B2 (ja) * 1990-02-26 1999-07-28 富士写真フイルム株式会社 画像読取装置
JPH0521340A (ja) * 1991-07-10 1993-01-29 Ricoh Co Ltd 薄膜半導体装置、その製法および製造装置
JPH0697196A (ja) * 1992-09-10 1994-04-08 Nippon Sheet Glass Co Ltd 半導体装置およびその製造方法
JPH0738110A (ja) * 1993-07-21 1995-02-07 Toshiba Corp 半導体装置の製造方法
JP2734359B2 (ja) * 1993-12-27 1998-03-30 日本電気株式会社 薄膜トランジスタ及びその製造方法
JPH08139335A (ja) * 1994-11-14 1996-05-31 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JPH09321313A (ja) * 1996-05-24 1997-12-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2697730B2 (ja) * 1996-09-10 1998-01-14 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法
JPH10213775A (ja) * 1997-01-29 1998-08-11 Dainippon Screen Mfg Co Ltd 光ビーム走査装置
JPH10189998A (ja) * 1996-12-20 1998-07-21 Sony Corp 表示用薄膜半導体装置及びその製造方法
JP3753827B2 (ja) * 1997-01-20 2006-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3032801B2 (ja) * 1997-03-03 2000-04-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4090533B2 (ja) * 1997-04-25 2008-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844561B2 (ja) * 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH114001A (ja) * 1997-06-11 1999-01-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4027465B2 (ja) * 1997-07-01 2007-12-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置およびその製造方法
JP3386713B2 (ja) * 1998-03-09 2003-03-17 株式会社半導体エネルギー研究所 アクテイブマトリクス型表示装置の作製方法

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JP2000299470A (ja) 2000-10-24

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