JP4698951B2 - 調整可能な静電チャックのための可変温度方法 - Google Patents

調整可能な静電チャックのための可変温度方法 Download PDF

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Publication number
JP4698951B2
JP4698951B2 JP2003582806A JP2003582806A JP4698951B2 JP 4698951 B2 JP4698951 B2 JP 4698951B2 JP 2003582806 A JP2003582806 A JP 2003582806A JP 2003582806 A JP2003582806 A JP 2003582806A JP 4698951 B2 JP4698951 B2 JP 4698951B2
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set temperature
wafer
temperature
chuck
outer set
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Expired - Fee Related
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Japanese (ja)
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JP2005522051A5 (https=
JP2005522051A (ja
Inventor
トム エイ カンプ
リチャード ゴットショ
スティーヴ リー
クリス リー
ヨウコ ヤマグチ
ヴァヒド ヴァヘディ
アーロン エップラー
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ラム リサーチ コーポレイション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
JP2003582806A 2002-04-02 2003-03-25 調整可能な静電チャックのための可変温度方法 Expired - Fee Related JP4698951B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US36977302P 2002-04-02 2002-04-02
US60/369,773 2002-04-02
US10/235,453 2002-09-04
US10/235,453 US6921724B2 (en) 2002-04-02 2002-09-04 Variable temperature processes for tunable electrostatic chuck
PCT/US2003/009153 WO2003085721A2 (en) 2002-04-02 2003-03-25 Variable temperature processes for tunable electrostatic chuck

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010113921A Division JP5881277B2 (ja) 2002-04-02 2010-05-18 調整可能な静電チャックのための可変温度方法

Publications (3)

Publication Number Publication Date
JP2005522051A JP2005522051A (ja) 2005-07-21
JP2005522051A5 JP2005522051A5 (https=) 2011-02-03
JP4698951B2 true JP4698951B2 (ja) 2011-06-08

Family

ID=28456852

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2003582806A Expired - Fee Related JP4698951B2 (ja) 2002-04-02 2003-03-25 調整可能な静電チャックのための可変温度方法
JP2010113921A Expired - Fee Related JP5881277B2 (ja) 2002-04-02 2010-05-18 調整可能な静電チャックのための可変温度方法
JP2015227250A Expired - Lifetime JP6170540B2 (ja) 2002-04-02 2015-11-20 調整可能な静電チャックのための可変温度方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010113921A Expired - Fee Related JP5881277B2 (ja) 2002-04-02 2010-05-18 調整可能な静電チャックのための可変温度方法
JP2015227250A Expired - Lifetime JP6170540B2 (ja) 2002-04-02 2015-11-20 調整可能な静電チャックのための可変温度方法

Country Status (11)

Country Link
US (1) US6921724B2 (https=)
EP (1) EP1493180B1 (https=)
JP (3) JP4698951B2 (https=)
KR (1) KR100921356B1 (https=)
CN (1) CN1323427C (https=)
AT (1) ATE362652T1 (https=)
AU (1) AU2003233432A1 (https=)
DE (1) DE60313861T2 (https=)
IL (2) IL164363A0 (https=)
TW (1) TWI281212B (https=)
WO (1) WO2003085721A2 (https=)

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Also Published As

Publication number Publication date
EP1493180B1 (en) 2007-05-16
IL164363A0 (en) 2005-12-18
DE60313861T2 (de) 2008-01-17
AU2003233432A1 (en) 2003-10-20
TW200406846A (en) 2004-05-01
DE60313861D1 (de) 2007-06-28
KR100921356B1 (ko) 2009-10-13
IL164363A (en) 2010-02-17
KR20050004834A (ko) 2005-01-12
CN1647259A (zh) 2005-07-27
US6921724B2 (en) 2005-07-26
EP1493180A2 (en) 2005-01-05
JP2005522051A (ja) 2005-07-21
JP2016096341A (ja) 2016-05-26
US20030186545A1 (en) 2003-10-02
TWI281212B (en) 2007-05-11
JP6170540B2 (ja) 2017-07-26
JP2010187023A (ja) 2010-08-26
ATE362652T1 (de) 2007-06-15
WO2003085721A3 (en) 2003-12-18
JP5881277B2 (ja) 2016-03-09
WO2003085721A2 (en) 2003-10-16
CN1323427C (zh) 2007-06-27

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