ATE362652T1 - Veränderbare temperaturprozesse für verstellbaren elektrostatischen substrathalter - Google Patents

Veränderbare temperaturprozesse für verstellbaren elektrostatischen substrathalter

Info

Publication number
ATE362652T1
ATE362652T1 AT03728281T AT03728281T ATE362652T1 AT E362652 T1 ATE362652 T1 AT E362652T1 AT 03728281 T AT03728281 T AT 03728281T AT 03728281 T AT03728281 T AT 03728281T AT E362652 T1 ATE362652 T1 AT E362652T1
Authority
AT
Austria
Prior art keywords
temperature
wafer
changable
substrate holder
temperature processes
Prior art date
Application number
AT03728281T
Other languages
German (de)
English (en)
Inventor
Tom Kamp
Richard Gottscho
Steve Lee
Chris Lee
Yoko Yamaguchi
Vahid Vahedi
Aaron Eppler
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE362652T1 publication Critical patent/ATE362652T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
AT03728281T 2002-04-02 2003-03-25 Veränderbare temperaturprozesse für verstellbaren elektrostatischen substrathalter ATE362652T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36977302P 2002-04-02 2002-04-02
US10/235,453 US6921724B2 (en) 2002-04-02 2002-09-04 Variable temperature processes for tunable electrostatic chuck

Publications (1)

Publication Number Publication Date
ATE362652T1 true ATE362652T1 (de) 2007-06-15

Family

ID=28456852

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03728281T ATE362652T1 (de) 2002-04-02 2003-03-25 Veränderbare temperaturprozesse für verstellbaren elektrostatischen substrathalter

Country Status (11)

Country Link
US (1) US6921724B2 (https=)
EP (1) EP1493180B1 (https=)
JP (3) JP4698951B2 (https=)
KR (1) KR100921356B1 (https=)
CN (1) CN1323427C (https=)
AT (1) ATE362652T1 (https=)
AU (1) AU2003233432A1 (https=)
DE (1) DE60313861T2 (https=)
IL (2) IL164363A0 (https=)
TW (1) TWI281212B (https=)
WO (1) WO2003085721A2 (https=)

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Also Published As

Publication number Publication date
JP6170540B2 (ja) 2017-07-26
US20030186545A1 (en) 2003-10-02
DE60313861T2 (de) 2008-01-17
JP5881277B2 (ja) 2016-03-09
US6921724B2 (en) 2005-07-26
EP1493180A2 (en) 2005-01-05
JP2010187023A (ja) 2010-08-26
JP2005522051A (ja) 2005-07-21
TWI281212B (en) 2007-05-11
WO2003085721A2 (en) 2003-10-16
IL164363A0 (en) 2005-12-18
CN1647259A (zh) 2005-07-27
KR20050004834A (ko) 2005-01-12
EP1493180B1 (en) 2007-05-16
KR100921356B1 (ko) 2009-10-13
TW200406846A (en) 2004-05-01
JP4698951B2 (ja) 2011-06-08
WO2003085721A3 (en) 2003-12-18
JP2016096341A (ja) 2016-05-26
CN1323427C (zh) 2007-06-27
IL164363A (en) 2010-02-17
DE60313861D1 (de) 2007-06-28
AU2003233432A1 (en) 2003-10-20

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