IL164363A0 - Variable temperature processes for tunable electrostatic chuck - Google Patents

Variable temperature processes for tunable electrostatic chuck

Info

Publication number
IL164363A0
IL164363A0 IL16436303A IL16436303A IL164363A0 IL 164363 A0 IL164363 A0 IL 164363A0 IL 16436303 A IL16436303 A IL 16436303A IL 16436303 A IL16436303 A IL 16436303A IL 164363 A0 IL164363 A0 IL 164363A0
Authority
IL
Israel
Prior art keywords
temperature
wafer
chuck
electrostatic chuck
variable temperature
Prior art date
Application number
IL16436303A
Other languages
English (en)
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of IL164363A0 publication Critical patent/IL164363A0/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/081Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/082Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts the openings being tapered via holes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0402Apparatus for fluid treatment
    • H10P72/0418Apparatus for fluid treatment for etching
    • H10P72/0421Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
IL16436303A 2002-04-02 2003-03-25 Variable temperature processes for tunable electrostatic chuck IL164363A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36977302P 2002-04-02 2002-04-02
US10/235,453 US6921724B2 (en) 2002-04-02 2002-09-04 Variable temperature processes for tunable electrostatic chuck
PCT/US2003/009153 WO2003085721A2 (en) 2002-04-02 2003-03-25 Variable temperature processes for tunable electrostatic chuck

Publications (1)

Publication Number Publication Date
IL164363A0 true IL164363A0 (en) 2005-12-18

Family

ID=28456852

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16436303A IL164363A0 (en) 2002-04-02 2003-03-25 Variable temperature processes for tunable electrostatic chuck
IL164363A IL164363A (en) 2002-04-02 2004-10-01 Variable temperature processes for tunable electrostatic chuck

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL164363A IL164363A (en) 2002-04-02 2004-10-01 Variable temperature processes for tunable electrostatic chuck

Country Status (11)

Country Link
US (1) US6921724B2 (https=)
EP (1) EP1493180B1 (https=)
JP (3) JP4698951B2 (https=)
KR (1) KR100921356B1 (https=)
CN (1) CN1323427C (https=)
AT (1) ATE362652T1 (https=)
AU (1) AU2003233432A1 (https=)
DE (1) DE60313861T2 (https=)
IL (2) IL164363A0 (https=)
TW (1) TWI281212B (https=)
WO (1) WO2003085721A2 (https=)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
FR2850790B1 (fr) * 2003-02-05 2005-04-08 Semco Engineering Sa Semelle de collage electrostatique avec electrode radiofrequence et moyens thermostatiques integres
US20040163601A1 (en) * 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
US20040173311A1 (en) * 2003-03-04 2004-09-09 Tomoyoshi Ichimaru Plasma processing apparatus and method
US7309641B2 (en) * 2004-11-24 2007-12-18 United Microelectronics Corp. Method for rounding bottom corners of trench and shallow trench isolation process
US7202178B2 (en) * 2004-12-01 2007-04-10 Lexmark International, Inc. Micro-fluid ejection head containing reentrant fluid feed slots
US20070190474A1 (en) * 2006-02-01 2007-08-16 Su Chao A Systems and methods of controlling systems
US7932181B2 (en) * 2006-06-20 2011-04-26 Lam Research Corporation Edge gas injection for critical dimension uniformity improvement
US7297894B1 (en) 2006-09-25 2007-11-20 Tokyo Electron Limited Method for multi-step temperature control of a substrate
US7723648B2 (en) * 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
US7557328B2 (en) * 2006-09-25 2009-07-07 Tokyo Electron Limited High rate method for stable temperature control of a substrate
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
WO2008051369A2 (en) * 2006-10-25 2008-05-02 Axcelis Technologies, Inc. Low-cost electrostatic clamp with fast declamp time and the manufacture
DE102006051550B4 (de) * 2006-10-30 2012-02-02 Fhr Anlagenbau Gmbh Verfahren und Vorrichtung zum Strukturieren von Bauteilen unter Verwendung eines Werkstoffs auf der Basis von Siliziumoxid
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
JP2008277499A (ja) * 2007-04-27 2008-11-13 Oki Electric Ind Co Ltd 半導体装置の製造方法
JP5433171B2 (ja) * 2008-06-16 2014-03-05 株式会社日立ハイテクノロジーズ 試料温度の制御方法
JP2010050046A (ja) * 2008-08-25 2010-03-04 Hitachi High-Technologies Corp プラズマ処理装置
WO2010090948A1 (en) * 2009-02-04 2010-08-12 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
TWI395289B (zh) * 2009-05-15 2013-05-01 Advanced Micro Fab Equip Inc An electrostatic chuck device, a plasma processing device, and a method of manufacturing an electrostatic chuck device
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
JP6066728B2 (ja) * 2009-12-15 2017-01-25 ラム リサーチ コーポレーションLam Research Corporation Cdの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8529729B2 (en) 2010-06-07 2013-09-10 Lam Research Corporation Plasma processing chamber component having adaptive thermal conductor
US8435901B2 (en) * 2010-06-11 2013-05-07 Tokyo Electron Limited Method of selectively etching an insulation stack for a metal interconnect
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US8791392B2 (en) 2010-10-22 2014-07-29 Lam Research Corporation Methods of fault detection for multiplexed heater array
US8546732B2 (en) 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
NL2008751A (en) 2011-06-06 2012-12-10 Asml Netherlands Bv Temperature sensing probe, burl plate, lithographic apparatus and method.
US9307578B2 (en) 2011-08-17 2016-04-05 Lam Research Corporation System and method for monitoring temperatures of and controlling multiplexed heater array
US10388493B2 (en) 2011-09-16 2019-08-20 Lam Research Corporation Component of a substrate support assembly producing localized magnetic fields
US8624168B2 (en) 2011-09-20 2014-01-07 Lam Research Corporation Heating plate with diode planar heater zones for semiconductor processing
US8461674B2 (en) 2011-09-21 2013-06-11 Lam Research Corporation Thermal plate with planar thermal zones for semiconductor processing
US8668837B2 (en) * 2011-10-13 2014-03-11 Applied Materials, Inc. Method for etching substrate
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
JP5933222B2 (ja) * 2011-11-08 2016-06-08 東京エレクトロン株式会社 温度制御方法、制御装置及びプラズマ処理装置
CN202979450U (zh) * 2011-12-31 2013-06-05 长春吉大·小天鹅仪器有限公司 一种mpt微波能量真空管水冷装置
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9324589B2 (en) 2012-02-28 2016-04-26 Lam Research Corporation Multiplexed heater array using AC drive for semiconductor processing
US8809747B2 (en) 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
JP5975755B2 (ja) * 2012-06-28 2016-08-23 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US10283615B2 (en) * 2012-07-02 2019-05-07 Novellus Systems, Inc. Ultrahigh selective polysilicon etch with high throughput
US10049948B2 (en) 2012-11-30 2018-08-14 Lam Research Corporation Power switching system for ESC with array of thermal control elements
US8668835B1 (en) 2013-01-23 2014-03-11 Lam Research Corporation Method of etching self-aligned vias and trenches in a multi-layer film stack
US8906810B2 (en) 2013-05-07 2014-12-09 Lam Research Corporation Pulsed dielectric etch process for in-situ metal hard mask shape control to enable void-free metallization
JP6159172B2 (ja) * 2013-06-26 2017-07-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
JP6217233B2 (ja) * 2013-08-21 2017-10-25 住友電気工業株式会社 半導体装置の製造方法
US10217615B2 (en) 2013-12-16 2019-02-26 Lam Research Corporation Plasma processing apparatus and component thereof including an optical fiber for determining a temperature thereof
US11158526B2 (en) * 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9437472B2 (en) * 2014-02-27 2016-09-06 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor line feature and manufacturing method thereof
US9543171B2 (en) * 2014-06-17 2017-01-10 Lam Research Corporation Auto-correction of malfunctioning thermal control element in a temperature control plate of a semiconductor substrate support assembly that includes deactivating the malfunctioning thermal control element and modifying a power level of at least one functioning thermal control element
JP6407694B2 (ja) 2014-12-16 2018-10-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP6806704B2 (ja) 2015-05-22 2021-01-06 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated 方位角方向に調整可能なマルチゾーン静電チャック
US10386821B2 (en) 2015-06-22 2019-08-20 Lam Research Corporation Systems and methods for calibrating scalar field contribution values for a limited number of sensors including a temperature value of an electrostatic chuck and estimating temperature distribution profiles based on calibrated values
US9779974B2 (en) 2015-06-22 2017-10-03 Lam Research Corporation System and method for reducing temperature transition in an electrostatic chuck
US10763142B2 (en) 2015-06-22 2020-09-01 Lam Research Corporation System and method for determining field non-uniformities of a wafer processing chamber using a wafer processing parameter
US10381248B2 (en) * 2015-06-22 2019-08-13 Lam Research Corporation Auto-correction of electrostatic chuck temperature non-uniformity
US10707110B2 (en) * 2015-11-23 2020-07-07 Lam Research Corporation Matched TCR joule heater designs for electrostatic chucks
US10690414B2 (en) 2015-12-11 2020-06-23 Lam Research Corporation Multi-plane heater for semiconductor substrate support
US10582570B2 (en) 2016-01-22 2020-03-03 Applied Materials, Inc. Sensor system for multi-zone electrostatic chuck
US10340171B2 (en) 2016-05-18 2019-07-02 Lam Research Corporation Permanent secondary erosion containment for electrostatic chuck bonds
US11069553B2 (en) * 2016-07-07 2021-07-20 Lam Research Corporation Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
CN109473381A (zh) * 2018-10-31 2019-03-15 上海华力微电子有限公司 湿法刻蚀清洗设备和方法
US11367645B2 (en) 2019-03-13 2022-06-21 Applied Materials, Inc. Temperature tunable multi-zone electrostatic chuck
US11533783B2 (en) * 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing
JP7812340B2 (ja) 2020-03-31 2026-02-09 ラム リサーチ コーポレーション 塩素を用いた高アスペクト比誘電体エッチング
JP7717717B2 (ja) * 2020-04-01 2025-08-04 ラム リサーチ コーポレーション 熱エッチングのための急速かつ正確な温度制御
US11551951B2 (en) 2020-05-05 2023-01-10 Applied Materials, Inc. Methods and systems for temperature control for a substrate
US12046477B2 (en) 2021-01-08 2024-07-23 Taiwan Semiconductor Manufacturing Company, Ltd. By-site-compensated etch back for local planarization/topography adjustment
US12568781B2 (en) 2021-01-25 2026-03-03 Lam Research Corporation Selective silicon trim by thermal etching
JP7351865B2 (ja) * 2021-02-15 2023-09-27 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
JP7817895B2 (ja) * 2022-07-04 2026-02-19 日本特殊陶業株式会社 保持装置
US12550671B2 (en) 2022-09-14 2026-02-10 International Business Machines Corporation Pixelated chuck for retaining warped semiconductor wafers
WO2026006190A1 (en) * 2024-06-24 2026-01-02 Watlow Electric Manufacturing Company Advanced control systems and methods for temperature control

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4971653A (en) * 1990-03-14 1990-11-20 Matrix Integrated Systems Temperature controlled chuck for elevated temperature etch processing
JPH05136095A (ja) * 1991-11-14 1993-06-01 Nec Corp ドライエツチング装置
JP2786571B2 (ja) * 1992-07-07 1998-08-13 日本碍子株式会社 半導体ウエハー加熱装置
JPH06283594A (ja) * 1993-03-24 1994-10-07 Tokyo Electron Ltd 静電チャック
JPH0917770A (ja) * 1995-06-28 1997-01-17 Sony Corp プラズマ処理方法およびこれに用いるプラズマ装置
JPH0997783A (ja) * 1995-09-28 1997-04-08 Nec Corp プラズマ処理装置
JPH1014266A (ja) * 1996-06-21 1998-01-16 Sony Corp 静電チャック装置及び静電チャックを用いたウエハの保持方法及び静電チャックからのウエハの脱着方法
US5711851A (en) * 1996-07-12 1998-01-27 Micron Technology, Inc. Process for improving the performance of a temperature-sensitive etch process
JPH10144655A (ja) * 1996-11-06 1998-05-29 Sony Corp ドライエッチング処理方法及びドライエッチング装置
US5989929A (en) 1997-07-22 1999-11-23 Matsushita Electronics Corporation Apparatus and method for manufacturing semiconductor device
US6073576A (en) * 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US5935874A (en) * 1998-03-31 1999-08-10 Lam Research Corporation Techniques for forming trenches in a silicon layer of a substrate in a high density plasma processing system
US6103585A (en) * 1998-06-09 2000-08-15 Siemens Aktiengesellschaft Method of forming deep trench capacitors
JP3892609B2 (ja) * 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
JP2000260720A (ja) * 1999-03-12 2000-09-22 Kokusai Electric Co Ltd 半導体製造装置
US6387798B1 (en) * 2001-06-25 2002-05-14 Institute Of Microelectronics Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profile

Also Published As

Publication number Publication date
EP1493180B1 (en) 2007-05-16
DE60313861T2 (de) 2008-01-17
AU2003233432A1 (en) 2003-10-20
TW200406846A (en) 2004-05-01
JP4698951B2 (ja) 2011-06-08
DE60313861D1 (de) 2007-06-28
KR100921356B1 (ko) 2009-10-13
IL164363A (en) 2010-02-17
KR20050004834A (ko) 2005-01-12
CN1647259A (zh) 2005-07-27
US6921724B2 (en) 2005-07-26
EP1493180A2 (en) 2005-01-05
JP2005522051A (ja) 2005-07-21
JP2016096341A (ja) 2016-05-26
US20030186545A1 (en) 2003-10-02
TWI281212B (en) 2007-05-11
JP6170540B2 (ja) 2017-07-26
JP2010187023A (ja) 2010-08-26
ATE362652T1 (de) 2007-06-15
WO2003085721A3 (en) 2003-12-18
JP5881277B2 (ja) 2016-03-09
WO2003085721A2 (en) 2003-10-16
CN1323427C (zh) 2007-06-27

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