JP4690938B2 - 高周波素子モジュール - Google Patents

高周波素子モジュール Download PDF

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Publication number
JP4690938B2
JP4690938B2 JP2006136290A JP2006136290A JP4690938B2 JP 4690938 B2 JP4690938 B2 JP 4690938B2 JP 2006136290 A JP2006136290 A JP 2006136290A JP 2006136290 A JP2006136290 A JP 2006136290A JP 4690938 B2 JP4690938 B2 JP 4690938B2
Authority
JP
Japan
Prior art keywords
frequency element
substrate
potting material
frequency
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006136290A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007311396A (ja
Inventor
大広 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2006136290A priority Critical patent/JP4690938B2/ja
Priority to TW096113658A priority patent/TW200802743A/zh
Priority to KR1020087013830A priority patent/KR100987089B1/ko
Priority to CN2007800015433A priority patent/CN101361180B/zh
Priority to PCT/JP2007/000509 priority patent/WO2007132560A1/ja
Priority to DE112007000081T priority patent/DE112007000081T5/de
Publication of JP2007311396A publication Critical patent/JP2007311396A/ja
Priority to US12/112,656 priority patent/US7635918B2/en
Application granted granted Critical
Publication of JP4690938B2 publication Critical patent/JP4690938B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/20—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
    • H10W42/261—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions
    • H10W42/276—Arrangements for protection of devices protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons characterised by their shapes or dispositions the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Casings For Electric Apparatus (AREA)
  • Waveguides (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Waveguide Connection Structure (AREA)
JP2006136290A 2006-05-16 2006-05-16 高周波素子モジュール Expired - Fee Related JP4690938B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006136290A JP4690938B2 (ja) 2006-05-16 2006-05-16 高周波素子モジュール
TW096113658A TW200802743A (en) 2006-05-16 2007-04-18 High frequency device module and method for manufacturing the same
CN2007800015433A CN101361180B (zh) 2006-05-16 2007-05-11 高频元件模块
PCT/JP2007/000509 WO2007132560A1 (ja) 2006-05-16 2007-05-11 高周波素子モジュール及びその製造方法
KR1020087013830A KR100987089B1 (ko) 2006-05-16 2007-05-11 고주파 소자 모듈 및 그 제조 방법
DE112007000081T DE112007000081T5 (de) 2006-05-16 2007-05-11 Hochfrequenzgerätmodul und Herstellungsverfahren desselben
US12/112,656 US7635918B2 (en) 2006-05-16 2008-04-30 High frequency device module and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006136290A JP4690938B2 (ja) 2006-05-16 2006-05-16 高周波素子モジュール

Publications (2)

Publication Number Publication Date
JP2007311396A JP2007311396A (ja) 2007-11-29
JP4690938B2 true JP4690938B2 (ja) 2011-06-01

Family

ID=38693661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006136290A Expired - Fee Related JP4690938B2 (ja) 2006-05-16 2006-05-16 高周波素子モジュール

Country Status (7)

Country Link
US (1) US7635918B2 (enExample)
JP (1) JP4690938B2 (enExample)
KR (1) KR100987089B1 (enExample)
CN (1) CN101361180B (enExample)
DE (1) DE112007000081T5 (enExample)
TW (1) TW200802743A (enExample)
WO (1) WO2007132560A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8959762B2 (en) 2005-08-08 2015-02-24 Rf Micro Devices, Inc. Method of manufacturing an electronic module
US20090000815A1 (en) 2007-06-27 2009-01-01 Rf Micro Devices, Inc. Conformal shielding employing segment buildup
US8053872B1 (en) 2007-06-25 2011-11-08 Rf Micro Devices, Inc. Integrated shield for a no-lead semiconductor device package
US8062930B1 (en) 2005-08-08 2011-11-22 Rf Micro Devices, Inc. Sub-module conformal electromagnetic interference shield
US7956429B1 (en) 2007-08-02 2011-06-07 Rf Micro Devices, Inc. Insulator layer based MEMS devices
US9137934B2 (en) 2010-08-18 2015-09-15 Rf Micro Devices, Inc. Compartmentalized shielding of selected components
US8835226B2 (en) 2011-02-25 2014-09-16 Rf Micro Devices, Inc. Connection using conductive vias
US9627230B2 (en) 2011-02-28 2017-04-18 Qorvo Us, Inc. Methods of forming a microshield on standard QFN package
US9807890B2 (en) 2013-05-31 2017-10-31 Qorvo Us, Inc. Electronic modules having grounded electromagnetic shields
US11127689B2 (en) 2018-06-01 2021-09-21 Qorvo Us, Inc. Segmented shielding using wirebonds
US11219144B2 (en) 2018-06-28 2022-01-04 Qorvo Us, Inc. Electromagnetic shields for sub-modules
US11114363B2 (en) 2018-12-20 2021-09-07 Qorvo Us, Inc. Electronic package arrangements and related methods
US11515282B2 (en) 2019-05-21 2022-11-29 Qorvo Us, Inc. Electromagnetic shields with bonding wires for sub-modules

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2524202B1 (fr) * 1982-03-23 1985-11-08 Thomson Csf Module preadapte pour diode hyperfrequence, et procede de realisation de la connexion de polarisation de la diode
JP2987950B2 (ja) * 1991-01-25 1999-12-06 日立化成工業株式会社 ポリイミド系樹脂ペーストおよびこれを用いたｉｃ
JP2001035956A (ja) * 1999-07-19 2001-02-09 Sanyo Electric Co Ltd 半導体装置
JP3500335B2 (ja) * 1999-09-17 2004-02-23 株式会社東芝 高周波回路装置
JP2001345419A (ja) 2000-05-31 2001-12-14 Hitachi Ltd 一体型高周波無線回路モジュール
JP2003179181A (ja) * 2001-12-11 2003-06-27 Ngk Spark Plug Co Ltd 樹脂製配線基板
JP2003298004A (ja) 2002-04-04 2003-10-17 Fujitsu Ltd 素子間干渉電波シールド型高周波モジュール及び電子装置
JP2005109306A (ja) * 2003-10-01 2005-04-21 Matsushita Electric Ind Co Ltd 電子部品パッケージおよびその製造方法
JP2005340656A (ja) * 2004-05-28 2005-12-08 Matsushita Electric Ind Co Ltd 高周波集積回路装置及びその製造方法

Also Published As

Publication number Publication date
JP2007311396A (ja) 2007-11-29
TWI336510B (enExample) 2011-01-21
CN101361180B (zh) 2012-11-28
US20080203561A1 (en) 2008-08-28
KR20080088590A (ko) 2008-10-02
CN101361180A (zh) 2009-02-04
WO2007132560A1 (ja) 2007-11-22
DE112007000081T5 (de) 2009-04-23
US7635918B2 (en) 2009-12-22
TW200802743A (en) 2008-01-01
KR100987089B1 (ko) 2010-10-11

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