DE112007000081T5 - Hochfrequenzgerätmodul und Herstellungsverfahren desselben - Google Patents
Hochfrequenzgerätmodul und Herstellungsverfahren desselben Download PDFInfo
- Publication number
- DE112007000081T5 DE112007000081T5 DE112007000081T DE112007000081T DE112007000081T5 DE 112007000081 T5 DE112007000081 T5 DE 112007000081T5 DE 112007000081 T DE112007000081 T DE 112007000081T DE 112007000081 T DE112007000081 T DE 112007000081T DE 112007000081 T5 DE112007000081 T5 DE 112007000081T5
- Authority
- DE
- Germany
- Prior art keywords
- high frequency
- frequency device
- substrate
- electrodes
- device module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Waveguides (AREA)
- Casings For Electric Apparatus (AREA)
- Waveguide Connection Structure (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006136290A JP4690938B2 (ja) | 2006-05-16 | 2006-05-16 | 高周波素子モジュール |
| JP2006-136290 | 2006-05-16 | ||
| PCT/JP2007/000509 WO2007132560A1 (ja) | 2006-05-16 | 2007-05-11 | 高周波素子モジュール及びその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112007000081T5 true DE112007000081T5 (de) | 2009-04-23 |
Family
ID=38693661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112007000081T Withdrawn DE112007000081T5 (de) | 2006-05-16 | 2007-05-11 | Hochfrequenzgerätmodul und Herstellungsverfahren desselben |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7635918B2 (enExample) |
| JP (1) | JP4690938B2 (enExample) |
| KR (1) | KR100987089B1 (enExample) |
| CN (1) | CN101361180B (enExample) |
| DE (1) | DE112007000081T5 (enExample) |
| TW (1) | TW200802743A (enExample) |
| WO (1) | WO2007132560A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8062930B1 (en) | 2005-08-08 | 2011-11-22 | Rf Micro Devices, Inc. | Sub-module conformal electromagnetic interference shield |
| US8959762B2 (en) | 2005-08-08 | 2015-02-24 | Rf Micro Devices, Inc. | Method of manufacturing an electronic module |
| US8053872B1 (en) | 2007-06-25 | 2011-11-08 | Rf Micro Devices, Inc. | Integrated shield for a no-lead semiconductor device package |
| US8186048B2 (en) | 2007-06-27 | 2012-05-29 | Rf Micro Devices, Inc. | Conformal shielding process using process gases |
| US7956429B1 (en) | 2007-08-02 | 2011-06-07 | Rf Micro Devices, Inc. | Insulator layer based MEMS devices |
| US9137934B2 (en) | 2010-08-18 | 2015-09-15 | Rf Micro Devices, Inc. | Compartmentalized shielding of selected components |
| US8835226B2 (en) | 2011-02-25 | 2014-09-16 | Rf Micro Devices, Inc. | Connection using conductive vias |
| US9627230B2 (en) | 2011-02-28 | 2017-04-18 | Qorvo Us, Inc. | Methods of forming a microshield on standard QFN package |
| US9807890B2 (en) | 2013-05-31 | 2017-10-31 | Qorvo Us, Inc. | Electronic modules having grounded electromagnetic shields |
| US11127689B2 (en) | 2018-06-01 | 2021-09-21 | Qorvo Us, Inc. | Segmented shielding using wirebonds |
| US11219144B2 (en) | 2018-06-28 | 2022-01-04 | Qorvo Us, Inc. | Electromagnetic shields for sub-modules |
| US11114363B2 (en) | 2018-12-20 | 2021-09-07 | Qorvo Us, Inc. | Electronic package arrangements and related methods |
| US11515282B2 (en) | 2019-05-21 | 2022-11-29 | Qorvo Us, Inc. | Electromagnetic shields with bonding wires for sub-modules |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345419A (ja) | 2000-05-31 | 2001-12-14 | Hitachi Ltd | 一体型高周波無線回路モジュール |
| JP2003298004A (ja) | 2002-04-04 | 2003-10-17 | Fujitsu Ltd | 素子間干渉電波シールド型高周波モジュール及び電子装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2524202B1 (fr) * | 1982-03-23 | 1985-11-08 | Thomson Csf | Module preadapte pour diode hyperfrequence, et procede de realisation de la connexion de polarisation de la diode |
| JP2987950B2 (ja) * | 1991-01-25 | 1999-12-06 | 日立化成工業株式会社 | ポリイミド系樹脂ペーストおよびこれを用いたic |
| JP2001035956A (ja) * | 1999-07-19 | 2001-02-09 | Sanyo Electric Co Ltd | 半導体装置 |
| JP3500335B2 (ja) * | 1999-09-17 | 2004-02-23 | 株式会社東芝 | 高周波回路装置 |
| JP2003179181A (ja) * | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 樹脂製配線基板 |
| JP2005109306A (ja) * | 2003-10-01 | 2005-04-21 | Matsushita Electric Ind Co Ltd | 電子部品パッケージおよびその製造方法 |
| JP2005340656A (ja) * | 2004-05-28 | 2005-12-08 | Matsushita Electric Ind Co Ltd | 高周波集積回路装置及びその製造方法 |
-
2006
- 2006-05-16 JP JP2006136290A patent/JP4690938B2/ja not_active Expired - Fee Related
-
2007
- 2007-04-18 TW TW096113658A patent/TW200802743A/zh not_active IP Right Cessation
- 2007-05-11 WO PCT/JP2007/000509 patent/WO2007132560A1/ja not_active Ceased
- 2007-05-11 DE DE112007000081T patent/DE112007000081T5/de not_active Withdrawn
- 2007-05-11 CN CN2007800015433A patent/CN101361180B/zh not_active Expired - Fee Related
- 2007-05-11 KR KR1020087013830A patent/KR100987089B1/ko not_active Expired - Fee Related
-
2008
- 2008-04-30 US US12/112,656 patent/US7635918B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001345419A (ja) | 2000-05-31 | 2001-12-14 | Hitachi Ltd | 一体型高周波無線回路モジュール |
| JP2003298004A (ja) | 2002-04-04 | 2003-10-17 | Fujitsu Ltd | 素子間干渉電波シールド型高周波モジュール及び電子装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4690938B2 (ja) | 2011-06-01 |
| WO2007132560A1 (ja) | 2007-11-22 |
| JP2007311396A (ja) | 2007-11-29 |
| CN101361180A (zh) | 2009-02-04 |
| TW200802743A (en) | 2008-01-01 |
| US7635918B2 (en) | 2009-12-22 |
| CN101361180B (zh) | 2012-11-28 |
| KR100987089B1 (ko) | 2010-10-11 |
| US20080203561A1 (en) | 2008-08-28 |
| TWI336510B (enExample) | 2011-01-21 |
| KR20080088590A (ko) | 2008-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112007000081T5 (de) | Hochfrequenzgerätmodul und Herstellungsverfahren desselben | |
| DE69504377T2 (de) | Mittel mit geringer elektromagnetischer Transparenz und Reflexion zur Unterdrückung von elektromagnetischen Interferenzen und damit versehene elektronische Vorrichtung | |
| DE102014112497B4 (de) | Funktionalisierte Redistribution-Layer | |
| DE102007034750B4 (de) | Verbessertes galvanisches Trennglied | |
| DE102004002176B4 (de) | Mikrominiatur-Stromrichter | |
| DE69727373T2 (de) | Halbleitervorrichtung | |
| DE69232611T2 (de) | Gestapelte Chip-Anordnung und Herstellungsverfahren für dieselbe | |
| DE102008045744B4 (de) | Halbleiterbaustein mit einer an eine Rückseite eines Chips gekoppelten Elektronikkomponente und Verfahren zur Herstellung | |
| DE69733193T2 (de) | Halbleiteranordnung mit einem Leitersubstrat | |
| DE112005002369T5 (de) | Verfahren zur Herstellung eines Halbleitergehäuses und Aufbau desselben | |
| DE10229542B4 (de) | Elektronisches Bauteil mit mehrschichtiger Umverdrahtungsplatte und Verfahren zur Herstellung desselben | |
| DE102016107982A1 (de) | Chipkartenmodul, Chipkarte und Verfahren zum Bilden eines Chipkartenmoduls | |
| DE102019202716B4 (de) | Flex-folien-package mit coplanarer topologie für hochfrequenzsignale und verfahren zum herstellen eines derartigen flex-folien-packages | |
| DE69000153T2 (de) | Tragbare, mit bausteinen verbindbare elektronik. | |
| DE102016213202A1 (de) | Mehrschichtenplatine mit einem Übergangselement zum Transformieren einer Hohlleiterwelle auf eine leitungsgeführte Welle | |
| DE112020003122T5 (de) | Elektronikbauteil und elektronikbauteil-montagestruktur | |
| DE102018200633B4 (de) | Magnetische Abschirmungsgehäusestruktur für eine MRAM-Vorrichtung und Verfahren zum Herstellen selbiger | |
| DE102017218138B4 (de) | Vorrichtung mit Substrat mit leitfähigen Säulen und Verfahren zur Herstellung der Vorrichtung | |
| WO2012016898A2 (de) | Verfahren zur herstellung einer mehrzahl von elektronischen bauelementen mit elektromagnetischer schirmung und insbesondere mit wärmeabführung und elektronisches bauelement mit elektromagnetischer schirmung und insbesondere mit wärmeabführung | |
| DE102013223500A1 (de) | Hochfrequenzvorrichtung | |
| DE102017210901B4 (de) | Halbleitervorrichtung und Verfahren einer Fertigung derselben | |
| DE102018116563A1 (de) | Leiterplatten mit verkrümmungsfesten formteilabschnitten und zugehörige halbleiterpackages und herstellungsverfahren | |
| DE102018215638B4 (de) | Bondfolie, elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements | |
| DE102019218478A1 (de) | Halbleitervorrichtung und Herstellungsverfahren für eine Halbleitervorrichtung | |
| DE19840251B4 (de) | Schaltungschip, insbesondere Transponder mit Lichtschutz |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |