Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
  • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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  • H01L23/00—Details of semiconductor or other solid state devices
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
• • H—ELECTRICITY
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  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
  • H01L23/64—Impedance arrangements
  • H01L23/66—High-frequency adaptations
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K9/00—Screening of apparatus or components against electric or magnetic fields
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
  • H01L2224/45001—Core members of the connector
  • H01L2224/45099—Material
  • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
  • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
  • H01L2224/45144—Gold (Au) as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/4805—Shape
  • H01L2224/4809—Loop shape
  • H01L2224/48091—Arched
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/481—Disposition
  • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
  • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
  • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
  • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/42—Wire connectors; Manufacturing methods related thereto
  • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/42—Wire connectors; Manufacturing methods related thereto
  • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01079—Gold [Au]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/13—Discrete devices, e.g. 3 terminal devices
  • H01L2924/1304—Transistor
  • H01L2924/1306—Field-effect transistor [FET]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
  • H01L2924/141—Analog devices
  • H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/1515—Shape
  • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
  • H01L2924/151—Die mounting substrate
  • H01L2924/1517—Multilayer substrate
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/30—Technical effects
  • H01L2924/301—Electrical effects
  • H01L2924/3025—Electromagnetic shielding

Definitions

• the present invention relates to a high-frequency element module in which a high-frequency element such as a microwave element is embedded, and more particularly to its structure.
• a polyimide in a simple package having a metal plate on a ceramic single plate and an element fixed thereto
• a polyimide in which a polyimide is applied to protect the surface, and a potting material is applied thereon to protect wires and elements.
• Japanese Patent Publication No. 2003-298004 describes an insulating resin layer in which metal particles such as Ni particles are dispersed in order to prevent electromagnetic interference between active element chips operating in a high frequency band.
• a sealed high frequency device module is disclosed.
• the present invention relates to the problems of the conventional high-frequency element module as described above.
• the present invention provides a high-frequency device module and a method for manufacturing the same, which has a low electrical influence on the outside and an external influence for a long period of time, and thus has good electrical performance, a simple structure, and a low cost.
• an insulating substrate characterized in that one end has a grounded metal layer.
• an insulating substrate having an electrode provided on the front surface and a grounding substrate provided on the back surface, and a high frequency device provided on the insulating substrate, the terminal of the element being connected to the electrode.
• a high-frequency element module comprising: an element; a potting material covering the high-frequency element; and a metal layer provided on the potting material and connected to the ground substrate.
• FIG. 1 is a cross-sectional view showing the structure of the high-frequency device module according to the first embodiment of the present invention
• FIG. 2 is a top view of the high-frequency device module.
• FIG. 1 shows a cross section taken along line A 1 _A 2 in FIG.
• An insulating substrate 1 2 having a predetermined hole portion 1 1, made of ceramic, and provided with wiring on the surface, and electrodes 1 3 a and 1 3 b wired on the surface of the insulating substrate 1 2 And a grounding board 1 3 provided including the back surface of the hole 1 1, a base part 1 4 provided in the hole 1 1 on the grounding board 1 3, and a top part of the base part 1 4.
• the fixed high-frequency element 15 is connected to the element terminals 1 6 a and 16 b of the high-frequency element 1 5 and the electrodes 1 3 a and 1 3 b on the insulating substrate 1 2, for example, gold.
• the high-frequency element 15 is, for example, a field effect transistor (FET), and a surface protective material such as polyimide 20 is applied to the periphery of the high-frequency element 15 in order to protect the surface of the element and improve adhesion.
• FET field effect transistor
• a method for manufacturing the high frequency device module of this embodiment will be described. Until the potting material 18 is provided, the same method as before can be used. Next, as shown in FIG. 3, a mask pattern 31 is formed in which only a necessary portion of the upper portion of the potting material 18 is opened, and a metal material, for example, aluminum is deposited by this mask pattern to form a metal film 19. Provide. The thickness of the metal film 19 is preferably about 1 to 5 microns.
• the metal film 19 is sized and shaped as shown in FIG. That is, on the insulating substrate 12 in the direction orthogonal to the cross section shown in FIG. 1, the ground terminals 2 2 a and 2 2 b are provided as shown in FIG. The metal film 19 is shaped so as to be connected to these ground terminals 2 2 a and 2 2 b. Grounding terminals 2 2 a and 2 2 b are connected to the above grounding board 1 3
• the hole 11 of the insulating substrate 12 is covered with a potting material 18 including the electrodes 13a and 13b.
• the upper metal film 19 is provided so as not to contact the electrodes 13a and 13b.
• the shielding effect is high and an inexpensive high-frequency element module can be obtained.
• the high-frequency element 15 can be almost completely electromagnetically sealed, and the influence of the outside can be reduced.
• the isolation is improved, a high-gain high-frequency element can be obtained, and an inexpensive high-frequency element module can be obtained.
• the monolithic microwave integrated circuit (MMIC; Mono I is a hie microwave integrated circuit) used as a high-frequency element as described above, the module terminal position is often changed due to the demand for miniaturization. It is supposed to be done. In such a case, it may be possible to change the bonding wire, but in high-gain devices such as MMIC elements, if the wire crosses over the high-frequency element, the induction of the electromagnetic field generated by the device is picked up. Problems such as oscillation may occur.
• the second embodiment described below is a high-frequency element module suitable for such a case.
• FIG. 4 is a cross-sectional view showing the structure of the high-frequency element module of the second embodiment.
• the numbers 4 1 to 5 2 b correspond to the numbers 1 1 to 2 2 b shown in FIG.
• the base part 41 is provided in the hole part 41 of the insulating substrate 42 made of ceramic, for example, and a high frequency element 45, for example, an MMIC element is mounted on the base part 41. Is provided. Electrodes 4 3 a and 4 3 c and electrodes 4 3 b and 4 3 d are provided on the surface of the insulating substrate 4 2, and wires 4 7 a and 4 7 b made of gold are these electrodes. Connected to.
• the periphery of the high-frequency element 45 is coated with, for example, polyimide 50 as a surface protective material for the element.
• the high frequency element 45 and the wire are sealed with a potting material 48.
• a metal film 49 for example, aluminum is provided with a thickness of 1 to 5 microns by vapor deposition.
• an organic polyimide 53 is applied as an insulating layer on the metal film 49, and further, for example, as shown in FIG. Wiring pattern 5 4 for connecting 4 3 c is provided.
• Figure 4 is a cross-sectional view along the alternate long and short dash lines B 1 and B 2.
• an organic polyimide 55 is applied thereon as a protective layer for protecting the wiring pattern 54.
• the high frequency element module having a structure in which a high frequency element is provided in a hole provided in an insulating substrate and sealed with a potting material has been described.
• the present invention is not limited to such a module, but can also be applied to a high-frequency element module having a structure in which a high-frequency element is provided on an insulating substrate and covered with a potting material.
• polyimide is applied to the high-frequency element, the high-frequency element can be protected and the adhesion between the high-frequency element and the potting material can be improved.
• the present invention is not limited to polyimide as the surface protective material, and other materials can be applied.
• the surface protective material is not necessarily required in the present invention.
• the metal film is provided on the potting material.
• the metal film not only the metal film but generally a metal layer may be provided.
• a high frequency device module of the present invention includes an insulating substrate, a high frequency device provided on the insulating substrate, a potting material covering the high frequency device, and at least one end of the potting material provided on the potting material. And a grounded metal layer.
• FIG. 1 is a cross-sectional view showing the structure of a first embodiment of the present invention.
• FIG. 2 is a top view of the first embodiment of the present invention.
• FIG. 3 is a drawing for explaining the manufacturing method according to the first embodiment of the present invention.
• FIG. 4 is a cross-sectional view showing the structure of a second embodiment of the present invention.
• FIG. 5 is a diagram for explaining a wiring pattern in the second embodiment of the present invention.

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• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Electromagnetism (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
• Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
• Casings For Electric Apparatus (AREA)
• Waveguides (AREA)
• Waveguide Connection Structure (AREA)
• Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
• Semiconductor Integrated Circuits (AREA)

Priority Applications (3)

Applications Claiming Priority (2)

Related Child Applications (1)

Publications (1)

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Cited By (12)

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Citations (4)

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• 2006
  • 2006-05-16 JP JP2006136290A patent/JP4690938B2/ja not_active Expired - Fee Related
• 2007
  • 2007-04-18 TW TW096113658A patent/TW200802743A/zh not_active IP Right Cessation
  • 2007-05-11 WO PCT/JP2007/000509 patent/WO2007132560A1/ja not_active Ceased
  • 2007-05-11 DE DE112007000081T patent/DE112007000081T5/de not_active Withdrawn
  • 2007-05-11 CN CN2007800015433A patent/CN101361180B/zh not_active Expired - Fee Related
  • 2007-05-11 KR KR1020087013830A patent/KR100987089B1/ko not_active Expired - Fee Related
• 2008
  • 2008-04-30 US US12/112,656 patent/US7635918B2/en not_active Expired - Fee Related

Patent Citations (4)

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