CN102610590A - 具电磁干扰屏蔽的封装模块 - Google Patents

具电磁干扰屏蔽的封装模块 Download PDF

Info

Publication number
CN102610590A
CN102610590A CN2011102372700A CN201110237270A CN102610590A CN 102610590 A CN102610590 A CN 102610590A CN 2011102372700 A CN2011102372700 A CN 2011102372700A CN 201110237270 A CN201110237270 A CN 201110237270A CN 102610590 A CN102610590 A CN 102610590A
Authority
CN
China
Prior art keywords
substrate
package module
electromagnetic interference
screen
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011102372700A
Other languages
English (en)
Inventor
林南君
郑雅云
郑靖桦
刘广三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ADL Engineering Inc
Original Assignee
ADL Engineering Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ADL Engineering Inc filed Critical ADL Engineering Inc
Publication of CN102610590A publication Critical patent/CN102610590A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields
    • H05K9/0007Casings
    • H05K9/002Casings with localised screening
    • H05K9/0022Casings with localised screening of components mounted on printed circuit boards [PCB]
    • H05K9/0024Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
    • H05K9/0026Shield cases mounted on a PCB, e.g. cans or caps or conformal shields integrally formed from metal sheet
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818Bonding techniques
    • H01L2224/81801Soldering or alloying
    • H01L2224/81815Reflow soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/157Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788Glasses, e.g. amorphous oxides, nitrides or fluorides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明揭露具电磁干扰屏蔽的封装模块及其方法。上述封装模块包含基板或印刷电路板,其具有至少一接地接垫。复数电子组件装设于基板上。介电层覆盖一选定范围,其涵盖复数电子组件及接地接垫。开孔是形成于介电层内及接地接垫之上。具有至少二金属层的屏蔽层覆盖介电层且通过开孔电性耦合至接地接垫。一般而言,尚有保护层以密封整个基板。本发明的封装模块不但可达到微型封装的要求,还可减少高速电子装置所造成的电磁干扰。

Description

具电磁干扰屏蔽的封装模块
技术领域
本发明有关于电子封装模块,特定而言是有关于具有电磁干扰屏蔽功能及微型封装特性的封装模块。
背景技术
由于半导体科技的快速发展,电子产品例如移动电话、电视、笔记本计算机等的复杂度及功能性大为增加。越来越多复杂且高速的半导体装置被封装于基板或印刷电路板内。高速半导体装置会产生电磁波而干扰其它装置,或受到其它高速装置所发射的电磁波干扰。电磁干扰(electromagnetic interference,EMI)将会负面影响电子系统的操作,而电磁干扰所造成的问题对电子仪器的制造者而言已属常见。
一种传统减少电磁干扰的方法是提供分离的金属壳于模制的半导体封装上。金属壳一般连接至接地平面或印刷电路板上的接垫上,以减少电磁干扰。然而,金属壳却会负面增加封装的厚度,而此情况必定无法满足微型封装的趋势。此外,金属壳的形成需要额外的工艺及附加的材料,而将显著增加封装成本。于另一方法中,导电泡沫塑料或橡胶被施于模制封装上,以吸收电磁干扰。然而,导电泡沫塑料或橡胶必须以人工施加,且需要特别的材料及额外的工艺,而将会显著增加封装成本。再者,导电泡沫塑料或橡胶也会负面增加模制封装的厚度。一种改进的现有方法是将屏蔽表面直接金属化,并将其与接地金属线接触。然而,因屏蔽范围是涵盖整个封装,且若要改变屏蔽的形状及范围则只有较小的弹性。
发明内容
本发明是揭露具电磁干扰屏蔽的封装模块,以及制造此模块的方法。仅选定的范围需要屏蔽层。选定范围的基板具有会发射电磁波的电子装置,或易受到来自其它电子装置或系统的电磁波所负面影响的电子装置。因此,屏蔽层的形状及范围可弹性且节约地加以设计,以节省材料成本。此外,由于不再需要预留电磁干扰屏蔽用的专属区域或在各屏蔽范围之间不再需要较大的接地空间,故封装密度可更加紧密。
本发明揭露一种具电磁干扰屏蔽的封装模块,上述封装模块包含一基板,其具有至少一接地接垫,以及复数电子组件,其装设于上述基板之上。上述封装模块还包含一介电层,其覆盖一选定范围,该选定范围涵盖含有该复数电子组件及该接地接垫的该基板的一部分,复数开孔,其形成于上述介电层内且于上述接地接垫之上,以及一屏蔽层,其覆盖上述介电层且通过该复数开孔电性耦合至该接地接垫。上述封装模块还包含一接合层,其形成于该屏蔽层之上,覆盖上述屏蔽层,以及一保护层,其覆盖于整个基板之上。
选定范围为该基板的牲定区域。在选定范围内的基板装设有会发射电磁波或易受到电磁波负面影响的电子组件。屏蔽层可减少电磁干扰。屏蔽层包含至少二金属层以改善屏蔽层与介电层之间之的黏着性。
接合层位于屏蔽层之上,可提升屏蔽层与保护层之间的黏着性。然而,当屏蔽层与保护层之间无黏着性问题时,接合层可予以省略。保护层为密封整个基板的覆盖层,其材料为一模封材料,可防止封装模块受到来自于周围环境的污染及湿气。
于一实施例中,基板包含印刷电路板、半导体基板、陶瓷、玻璃或任何其结合。介电层为将接地接垫及电子组件与屏蔽层电性隔离,介电层为绝缘体例如二氧化硅(SiO2)、氮化硅(Si3N4)或任何由下列组成的化学组成物:硅(Si)、氮(N)及氧(O)。
本发明揭露一种用以形成具电磁干扰屏蔽的封装模块的方法,上述方法包含提供一基板,上述基板具有至少一接地接垫;设置复数电子组件于上述基板上;执行回焊工艺(reflow process)以将上述电子组件耦合至上述基板;沉积一介电层于一选定范围上,上述选定范围涵盖含有上述复数电子组件及上述接地接垫的上述基板的一部分;形成复数开孔于上述介电层内且于上述接地接垫之上;形成一屏蔽层,上述屏蔽层覆盖上述介电层且通过上述复数开孔电性耦合至上述接地接垫;以及形成一保护层于整个基板之上。于一实施例中,还形成一接合层在形成保护层之前形成于屏蔽层之上。
以下将叙述若干用以形成各层的技术。于一实施例中,形成接地接垫的技术包含溅镀、印刷、电镀、物理气相沉积(PVD)、化学气相沉积(CVD)或任何其结合。形成介电层的技术包含溅镀、化学气相沉积(CVD)、印刷或任何其结合。形成屏蔽层的技术包含溅镀、印刷、电镀、物理气相沉积(PVD)、化学气相沉积(CVD)或任何其结合。形成接合层的技术包含溅镀、印刷、化学气相沉积(CVD)或任何其结合。形成保护层的技术包含射出、印刷、模造工艺或任何其结合。
本发明的封装模块能有效降低从高速电子装置所发射的电磁波或来自于其它电子装置的电磁波;不会体积庞大且可符合现行应用中微型封装的需求。此外,屏蔽层的范围及形状并不固定,可弹性设计。故可减少每一屏蔽范围之间的接地接垫空间,以此可大量节省介电层及屏蔽层的材料。
附图说明
图1是显示本发明的实施例封装模块。
图2是显示仅覆盖一部分基板的屏蔽层。
图3a是显示先提供有接地接垫的基板或印刷电路板。
图3b是显示装设于基板上的复数电子组件及沉积于屏蔽范围的介电层。
图3c是显示形成于介电层内且于接地接垫上的开孔以及沉积于介电层及开孔上的屏蔽层。
图4a是显示覆盖整个基板或印刷电路板的保护覆盖层。
图4b是显示在形成保护层之前沉积于屏蔽层上的接合层。
主要组件符号说明:
100 接地接垫          101 主动式电子组件
102 被动式组件        103 开孔
110 基板              120 介电层
130 屏蔽层            140 接合层
150 保护层            200 接地接垫
201 主动式电子组件    203 开孔
210基板            230屏蔽层
301、302电子组件
具体实施方式
本发明将以下述实施例加以叙述,此类实施例的叙述及范例仅用以说明而非用以限制本发明的权利要求。因此,除说明书中所述的实施例以外,本发明也可实行于其它大体上等同的实施例中。
以下将详细叙述具电磁干扰屏蔽的封装模块以及其制造方法,上述封装模块具有薄型屏蔽层。本发明的封装模块有效降低从高速电子装置所发射的电磁波或来自于其它电子装置的电磁波。电子装置或系统之间的电磁干扰(electromagnetic interference,EMI)会影响电子产品的正常运作。
本发明的封装模块因薄型屏蔽层而不会体积庞大且可符合现行应用中微型封装的需求。此外,屏蔽层的范围及形状并不固定,可弹性设计。故可减少每一屏蔽范围之间的接地接垫空间,以此可大量节省介电层及屏蔽层的材料。
于一实施例中,图1是揭露本发明的实施例封装模块。基板110,例如印刷电路板(PCB,printed circuit board)、半导体基板、陶瓷、玻璃或任何其结合,可作为支撑其上的复数电子组件例如主动式电子组件101及被动式组件102的基底。因基板110的主要功能是作为基底,故基板110的材料并不限于上述材料。
基板110具有电子电路、复数接触垫、接地平面或接地接垫100。基板110装设有各式主动式电子组件101及被动式组件102。之后,介电层120沉积于其上,用以将基板110上的电子电路、接地地垫及电子组件与屏蔽层130电性隔离。一般而言,二氧化硅(SiO2)、氮化硅(Si3N4)或SixNy的化学组成物是用作为介电层120。然而,只要介电层120的材料为绝缘体,本发明的介电层120的材料并不限于上述化学组成物。
复数开孔103形成于接地接垫100之上且于介电层120内,以此屏蔽层130电性耦合至接地接垫100。屏蔽层130含有至少二金属层,以改善屏蔽层130的黏着性,屏蔽层130沉积于介电层120之上,并填充开孔103,以减少电磁干扰。于一实施例中,屏蔽层130为铜/钛(Cu/Ti)或钛/铜/钛(Ti/Cu/Ti)的多层结构,以用于电磁干扰屏蔽及不同层之间的黏着性改善。
接合层140沉积于屏蔽层130之上,以提升保护层150的黏着性。保护层150用以密封封装模块并防止其受到湿气及污染,保护层150的材料可为模封材料(molding compounds),其大体上由下列所组成:环氧树脂(epoxy resins)、酚醛硬化剂(phenolic hardeners)、二氧化硅(silicas)、催化剂(catalysts)、颜料(pigments)及脱模剂(mold release agents)。于一实施例中,接合层140可予以省略,省略接合层140不会导致保护层150的黏着性问题。
于一实施例中,屏蔽层130的形状及范围可弹性设计成用于特定区域,而非基板110的整个区域。如图2所示,在整个基板210中仅主动式电子组件201会发射电磁波或易受电磁波的负面影响,故屏蔽层230只需覆盖主动式电子组件201。由于不再需要为电磁干扰屏蔽设计特定大范围的屏蔽层,故电子组件的设置可更加弹性且微型化。屏蔽层230因通过复数开孔203电性耦合至接地接垫200而能够吸收电磁波。
以下将叙述用以制造具有选定电磁干扰屏蔽范围的封装模块的工艺。如图3a所示,首先提供含有电子电路、连接垫、接地接垫100之基板110,接着通过回焊(reflow)工艺将电子组件301、302装设于基板110之上。电子电路、连接垫、接地接垫100通过溅镀(sputtering)、印刷(printting)、电镀(electroplating)、物理气相沉积(PVD,physical vapor deposition)、化学气相沉积(CVD,chemicalvapor deposition)或任何其结合而予以形成。假设选定电子组件301为要由电磁干扰屏蔽层所覆盖的组件。如图3b所示,介电层120是通过利用溅镀、化学气相沉积、印刷或任何其结合而沉积于电子组件301及邻近的接地接垫100上。介电层120是定义电磁干扰屏蔽的范围,只要介电层120有覆盖到需要电磁干扰屏蔽的组件,介电层120可为任何形状。
复数开孔103是通过执行涂布光阻、平版印刷(lithography)及蚀刻的工艺而形成于接地接垫100上。于另一实施例中,开孔103是通过激光切割而形成。如图3c所示,接续介电层120,含有至少二金属层的屏蔽层130是利用溅镀、印刷、电镀、物理气相沉积、化学气相沉积或任何其结合而形成于介电层120之上。进行到此时,具有电磁干扰屏蔽的封装模块遂完成。
于一实施例中,具有电磁干扰屏蔽层的封装模块是由模封材料(moldingcompound)所密封以作为保护层,用以防止封装模块的内部装置受到来自于周围环境的污染及/或湿气。如图4a所示,保护层150是利用射出(injection)、印刷、模造工艺(molding process)或任何其结合而形成于整个封装模块的整个基板之上。于另一实施例中,如图4b所示,为提升保护层150与屏蔽层130之间的黏着性,接合层140先利用射出或印刷工艺而形成于屏蔽层130之上,接着保护层150再模制于其上。
虽本发明的较佳实施例已叙述如上,但此领域的技术人员应得以领会本发明不限于此处所述的较佳实施例。在不脱离权利要求所定义的本发明的精神及范围下可作若干改动及润饰。

Claims (10)

1.一种具电磁干扰屏蔽的封装模块,其特征在于,包含:
一基板,具有至少一接地接垫;
复数电子组件,装设于该基板之上;
一介电层,覆盖一选定范围,该选定范围涵盖含有该复数电子组件及该接地接垫的该基板的一部分;
复数开孔,形成于该介电层内且于该接地接垫之上;以及
一屏蔽层,覆盖该介电层且通过该复数开孔电性耦合至该接地接垫。
2.根据权利要求1所述的具电磁干扰屏蔽的封装模块,其特征在于,还包含一接合层,形成于该屏蔽层之上。
3.根据权利要求1或2所述的具电磁干扰屏蔽的封装模块,其特征在于,还包含一保护层,覆盖于整个该基板之上。
4.根据权利要求3所述的具电磁干扰屏蔽的封装模块,其特征在于,其中该保护层为一模封材料,以阻挡来自于周围环境之湿气或污染。
5.根据权利要求1所述的具电磁干扰屏蔽的封装模块,其特征在于,其中该介电层为一绝缘材料,将该接地接垫及该复数电子组件与该屏蔽层电性隔离。
6.根据权利要求1所述的具电磁干扰屏蔽的封装模块,其特征在于,其中该选定范围为该基板的特定区域,会发射电磁波或易受到电磁波影响的该电子组件位于该特定区域中。
7.根据权利要求1所述的具电磁干扰屏蔽的封装模块,其特征在于,其中该屏蔽层减少电磁干扰且包含至少二金属层,以改善该屏蔽层之黏着性。
8.一种用以形成具电磁干扰屏蔽的封装模块的方法,该具电磁干扰屏蔽的封装模块如权利要求1所述,该方法的特征在于,包含:
提供一基板,该基板具有至少一接地接垫;
设置复数电子组件于该基板上;
执行回焊工艺以将该电子组件耦合至该基板;
沉积一介电层于一选定范围上,该选定范围涵盖含有该复数电子组件及该接地接垫的该基板的一部分;
形成复数开孔于该介电层内且于该接地接垫之上;以及
形成一屏蔽层,该屏蔽层覆盖该介电层且通过该复数开孔电性耦合至该接地接垫。
9.根据权利要求8所述的用以形成具电磁干扰屏蔽的封装模块的方法,其特征在于,还包含形成一接合层于该屏蔽层之上。
10.根据权利要求8或9所述的用以形成具电磁干扰屏蔽的封装模块的方法,其特征在于,还包含形成一保护层于整个该基板之上。
CN2011102372700A 2011-01-24 2011-08-18 具电磁干扰屏蔽的封装模块 Pending CN102610590A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/011,937 2011-01-24
US13/011,937 US20120188727A1 (en) 2011-01-24 2011-01-24 EMI Shielding in a Package Module

Publications (1)

Publication Number Publication Date
CN102610590A true CN102610590A (zh) 2012-07-25

Family

ID=46527869

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011102372700A Pending CN102610590A (zh) 2011-01-24 2011-08-18 具电磁干扰屏蔽的封装模块

Country Status (3)

Country Link
US (1) US20120188727A1 (zh)
CN (1) CN102610590A (zh)
TW (1) TW201232745A (zh)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013104274A1 (zh) * 2012-01-09 2013-07-18 华为终端有限公司 一种电路板的制作方法、电路板和电子设备
CN103234617A (zh) * 2013-04-17 2013-08-07 唐令弟 一种遥控温补数码称重器及其温补方法
CN103794573A (zh) * 2012-11-02 2014-05-14 环旭电子股份有限公司 电子封装模块及其制造方法
CN105529312A (zh) * 2014-09-12 2016-04-27 矽品精密工业股份有限公司 封装结构
CN105702664A (zh) * 2012-11-16 2016-06-22 日月光半导体制造股份有限公司 半导体封装构造及其制造方法
WO2016183991A1 (zh) * 2015-05-21 2016-11-24 小米科技有限责任公司 电路保护结构及电子装置
CN108630624A (zh) * 2017-03-24 2018-10-09 艾马克科技公司 电子装置及其制造方法
CN109119344A (zh) * 2017-06-23 2019-01-01 力成科技股份有限公司 半导体封装及半导体封装的制造工艺方法
CN109378276A (zh) * 2014-08-08 2019-02-22 日月光半导体制造股份有限公司 电子封装模块的制造方法以及电子封装模块
CN110010507A (zh) * 2019-04-04 2019-07-12 中电海康无锡科技有限公司 Sip模块分区电磁屏蔽封装方法
CN110729176A (zh) * 2019-10-15 2020-01-24 杭州见闻录科技有限公司 一种用于通信模块产品的emi屏蔽工艺和通信模块产品
CN110875200A (zh) * 2018-09-04 2020-03-10 中芯集成电路(宁波)有限公司 晶圆级封装方法及封装结构
CN111584374A (zh) * 2020-05-21 2020-08-25 徐彩芬 一种半导体器件的封装方法
WO2022257952A1 (zh) * 2021-06-11 2022-12-15 艾默生环境优化技术(苏州)有限公司 电子装置和使用该电子装置的变频控制系统
WO2023028719A1 (zh) * 2021-08-30 2023-03-09 苏宪强 可屏蔽及散热的电路板构造及其制造方法
CN117641714A (zh) * 2023-12-13 2024-03-01 同扬光电(江苏)有限公司 一种具有器件保护功能的柔性线路板
CN117641714B (zh) * 2023-12-13 2024-06-28 同扬光电(江苏)有限公司 一种具有器件保护功能的柔性线路板

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011006779B4 (de) * 2011-04-05 2017-06-08 Siemens Aktiengesellschaft Anordnung zum Kühlen von elektronischen Komponenten
TWI502733B (zh) 2012-11-02 2015-10-01 環旭電子股份有限公司 電子封裝模組及其製造方法
US9355864B2 (en) 2013-08-06 2016-05-31 Tel Nexx, Inc. Method for increasing adhesion of copper to polymeric surfaces
US9583445B2 (en) 2014-03-18 2017-02-28 Apple Inc. Metal electromagnetic interference (EMI) shielding coating along an edge of a ceramic substrate
US9491531B2 (en) 2014-08-11 2016-11-08 3R Semiconductor Technology Inc. Microphone device for reducing noise coupling effect
US10229887B2 (en) 2016-03-31 2019-03-12 Intel Corporation Systems and methods for electromagnetic interference shielding
JP7390779B2 (ja) * 2017-04-28 2023-12-04 日東電工株式会社 フレキシブル配線回路基板および撮像装置
CN107452696B (zh) * 2017-08-10 2019-11-01 华进半导体封装先导技术研发中心有限公司 电磁屏蔽封装体以及制造方法
CN110798966A (zh) * 2019-11-19 2020-02-14 江苏上达电子有限公司 一种用于线路板的新的电磁屏蔽的实现方法
CN113301707B (zh) * 2020-02-24 2022-09-27 北京小米移动软件有限公司 一种电路板及终端设备
US11616025B2 (en) * 2020-12-18 2023-03-28 STATS ChipPAC Pte. Ltd. Selective EMI shielding using preformed mask with fang design

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639989A (en) * 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
CN101071781A (zh) * 2006-05-09 2007-11-14 探微科技股份有限公司 晶片级封装方法及其结构
US20080055878A1 (en) * 2006-08-29 2008-03-06 Texas Instruments Incorporated Radiofrequency and electromagnetic interference shielding

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005037869B4 (de) * 2005-08-10 2007-05-31 Siemens Ag Anordnung zur hermetischen Abdichtung von Bauelementen und Verfahren zu deren Herstellung
US8276268B2 (en) * 2008-11-03 2012-10-02 General Electric Company System and method of forming a patterned conformal structure
US8102032B1 (en) * 2008-12-09 2012-01-24 Amkor Technology, Inc. System and method for compartmental shielding of stacked packages

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639989A (en) * 1994-04-19 1997-06-17 Motorola Inc. Shielded electronic component assembly and method for making the same
CN101071781A (zh) * 2006-05-09 2007-11-14 探微科技股份有限公司 晶片级封装方法及其结构
US20080055878A1 (en) * 2006-08-29 2008-03-06 Texas Instruments Incorporated Radiofrequency and electromagnetic interference shielding

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013104274A1 (zh) * 2012-01-09 2013-07-18 华为终端有限公司 一种电路板的制作方法、电路板和电子设备
US9426935B2 (en) 2012-01-09 2016-08-23 Huawei Device Co., Ltd. Method for manufacturing circuit board, circuit board, and electronic device
CN103794573B (zh) * 2012-11-02 2016-09-14 环旭电子股份有限公司 电子封装模块及其制造方法
CN103794573A (zh) * 2012-11-02 2014-05-14 环旭电子股份有限公司 电子封装模块及其制造方法
CN105702664A (zh) * 2012-11-16 2016-06-22 日月光半导体制造股份有限公司 半导体封装构造及其制造方法
CN103234617A (zh) * 2013-04-17 2013-08-07 唐令弟 一种遥控温补数码称重器及其温补方法
CN109378276A (zh) * 2014-08-08 2019-02-22 日月光半导体制造股份有限公司 电子封装模块的制造方法以及电子封装模块
CN109378276B (zh) * 2014-08-08 2022-07-05 日月光半导体制造股份有限公司 电子封装模块的制造方法以及电子封装模块
CN105529312A (zh) * 2014-09-12 2016-04-27 矽品精密工业股份有限公司 封装结构
WO2016183991A1 (zh) * 2015-05-21 2016-11-24 小米科技有限责任公司 电路保护结构及电子装置
CN108630624A (zh) * 2017-03-24 2018-10-09 艾马克科技公司 电子装置及其制造方法
CN109119344A (zh) * 2017-06-23 2019-01-01 力成科技股份有限公司 半导体封装及半导体封装的制造工艺方法
CN110875200B (zh) * 2018-09-04 2021-09-14 中芯集成电路(宁波)有限公司 晶圆级封装方法及封装结构
CN110875200A (zh) * 2018-09-04 2020-03-10 中芯集成电路(宁波)有限公司 晶圆级封装方法及封装结构
CN110010507A (zh) * 2019-04-04 2019-07-12 中电海康无锡科技有限公司 Sip模块分区电磁屏蔽封装方法
CN110729176A (zh) * 2019-10-15 2020-01-24 杭州见闻录科技有限公司 一种用于通信模块产品的emi屏蔽工艺和通信模块产品
CN111584374A (zh) * 2020-05-21 2020-08-25 徐彩芬 一种半导体器件的封装方法
CN111584374B (zh) * 2020-05-21 2023-08-22 深圳市鸿润芯电子有限公司 一种半导体器件的封装方法
WO2022257952A1 (zh) * 2021-06-11 2022-12-15 艾默生环境优化技术(苏州)有限公司 电子装置和使用该电子装置的变频控制系统
WO2023028719A1 (zh) * 2021-08-30 2023-03-09 苏宪强 可屏蔽及散热的电路板构造及其制造方法
CN117641714A (zh) * 2023-12-13 2024-03-01 同扬光电(江苏)有限公司 一种具有器件保护功能的柔性线路板
CN117641714B (zh) * 2023-12-13 2024-06-28 同扬光电(江苏)有限公司 一种具有器件保护功能的柔性线路板

Also Published As

Publication number Publication date
US20120188727A1 (en) 2012-07-26
TW201232745A (en) 2012-08-01

Similar Documents

Publication Publication Date Title
CN102610590A (zh) 具电磁干扰屏蔽的封装模块
US9674992B2 (en) Electromagnetic interference shielding film
US7648858B2 (en) Methods and apparatus for EMI shielding in multi-chip modules
CN1755929B (zh) 形成半导体封装及其结构的方法
CN103400825B (zh) 半导体封装件及其制造方法
CN1855451B (zh) 半导体装置及其制造方法
CN109788630B (zh) 用于便携式电子设备中的系统级封装组件的多层薄膜涂层
US20080055878A1 (en) Radiofrequency and electromagnetic interference shielding
CN107424961A (zh) 使用复合磁性密封材料的电子电路封装
JP7334169B2 (ja) システムインパッケージアセンブリの電磁干渉からのシールド方法
CN102224770A (zh) 电路基板的制造方法以及由该制造方法获得的电路基板
US20210218126A1 (en) SPUTTERED SiP ANTENNA
US20090091907A1 (en) Shielding structure for electronic components
CN109585421A (zh) 带有电磁屏蔽的双面模块
KR20170097345A (ko) 전자 소자 모듈 및 그 제조 방법
CN103794573A (zh) 电子封装模块及其制造方法
CN110379933A (zh) 显示基板及显示基板的制备工艺
KR100973053B1 (ko) 전자파 차폐용 쉴드캔 및 이의 제조 방법과 이를 포함하는 전자 장치
KR20170039505A (ko) 절연재 및 이를 포함하는 인쇄회로기판
CN103731971A (zh) 线路板金属孔屏蔽结构及其方法
CN216820529U (zh) 一种抗干扰电磁屏蔽膜
CN101389205A (zh) 防电磁干扰的电子装置及其制造方法
TWI793897B (zh) 電路板總成及其製造方法
CN216905291U (zh) 导音板及麦克风设备
KR20110133821A (ko) 고주파 패키지

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120725