JP4689218B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4689218B2
JP4689218B2 JP2004263486A JP2004263486A JP4689218B2 JP 4689218 B2 JP4689218 B2 JP 4689218B2 JP 2004263486 A JP2004263486 A JP 2004263486A JP 2004263486 A JP2004263486 A JP 2004263486A JP 4689218 B2 JP4689218 B2 JP 4689218B2
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JP
Japan
Prior art keywords
film
region
semiconductor
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004263486A
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English (en)
Japanese (ja)
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JP2005109465A5 (enExample
JP2005109465A (ja
Inventor
舜平 山崎
徹 高山
慎志 前川
誠 古野
哲司 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2004263486A priority Critical patent/JP4689218B2/ja
Publication of JP2005109465A publication Critical patent/JP2005109465A/ja
Publication of JP2005109465A5 publication Critical patent/JP2005109465A5/ja
Application granted granted Critical
Publication of JP4689218B2 publication Critical patent/JP4689218B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2004263486A 2003-09-12 2004-09-10 半導体装置の作製方法 Expired - Fee Related JP4689218B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004263486A JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003322324 2003-09-12
JP2003322324 2003-09-12
JP2004263486A JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005109465A JP2005109465A (ja) 2005-04-21
JP2005109465A5 JP2005109465A5 (enExample) 2007-10-18
JP4689218B2 true JP4689218B2 (ja) 2011-05-25

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Family Applications (1)

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JP2004263486A Expired - Fee Related JP4689218B2 (ja) 2003-09-12 2004-09-10 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4689218B2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569410A (zh) * 2012-02-28 2012-07-11 上海华力微电子有限公司 双层隔离半导体纳米线mosfet
CN102569409A (zh) * 2012-02-28 2012-07-11 上海华力微电子有限公司 双层隔离纵向堆叠式半导体纳米线mosfet
KR101730994B1 (ko) * 2014-04-04 2017-04-27 알프스 덴키 가부시키가이샤 전자 부품
KR101730997B1 (ko) * 2014-04-04 2017-04-27 알프스 덴키 가부시키가이샤 전자 부품

Families Citing this family (21)

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US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
JP2005277096A (ja) * 2004-03-24 2005-10-06 Japan Science & Technology Agency カーボンナノチューブ含有金属膜を用いてなる半導体配線とその製造方法、およびカーボンナノチューブ含有金属膜の製造方法
JP4855757B2 (ja) * 2005-10-19 2012-01-18 富士通株式会社 カーボンナノチューブパッド及び電子デバイス
JP4499752B2 (ja) * 2006-03-03 2010-07-07 日本エレクトロプレイテイング・エンジニヤース株式会社 電子部品
US7713858B2 (en) 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
JP4899703B2 (ja) * 2006-08-07 2012-03-21 富士通株式会社 カーボン配線構造およびその製造方法、および半導体装置
JP5233125B2 (ja) * 2007-02-01 2013-07-10 富士通株式会社 半導体装置
JP5168984B2 (ja) * 2007-03-30 2013-03-27 富士通株式会社 カーボンナノチューブ金属複合材料によるデバイス構造
CN104600057B (zh) 2007-09-12 2018-11-02 斯莫特克有限公司 使用纳米结构连接和粘接相邻层
JP2009117591A (ja) * 2007-11-06 2009-05-28 Panasonic Corp 配線構造及びその形成方法
CN105441903B (zh) * 2008-02-25 2018-04-24 斯莫特克有限公司 纳米结构制造过程中的导电助层的沉积和选择性移除
JP5186662B2 (ja) * 2008-09-16 2013-04-17 富士通株式会社 電子部品及び電子部品の製造方法
US9099537B2 (en) * 2009-08-28 2015-08-04 International Business Machines Corporation Selective nanotube growth inside vias using an ion beam
CN102376686B (zh) * 2010-08-11 2013-09-18 中国科学院微电子研究所 一种半导体器件及其制造方法
CN102376625B (zh) * 2010-08-11 2014-03-19 中国科学院微电子研究所 一种半导体器件及其制造方法
WO2012102281A1 (en) * 2011-01-28 2012-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6328870B2 (ja) * 2011-11-11 2018-05-23 株式会社Ihi ナノ構造物の製造方法
JP5978600B2 (ja) * 2011-11-21 2016-08-24 富士通株式会社 半導体装置の製造方法
CN105070767B (zh) * 2015-08-05 2018-04-20 西安电子科技大学 一种基于碳基复合电极的高温SiC JFET器件
KR102403468B1 (ko) * 2016-05-06 2022-05-31 스몰텍 에이비 어셈블리 플랫폼
KR102326519B1 (ko) * 2017-06-20 2021-11-15 삼성전자주식회사 반도체 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10006964C2 (de) * 2000-02-16 2002-01-31 Infineon Technologies Ag Elektronisches Bauelement mit einer leitenden Verbindung zwischen zwei leitenden Schichten und Verfahren zum Herstellen eines elektronischen Bauelements
JP2002009146A (ja) * 2000-06-19 2002-01-11 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP4212258B2 (ja) * 2001-05-02 2009-01-21 富士通株式会社 集積回路装置及び集積回路装置製造方法
JP2003017467A (ja) * 2001-06-28 2003-01-17 Hitachi Ltd 半導体集積回路装置の製造方法および半導体集積回路装置
JP2003142755A (ja) * 2001-11-05 2003-05-16 Fujitsu Ltd 磁気抵抗センサ及びその製造方法
JP4032116B2 (ja) * 2002-11-01 2008-01-16 国立大学法人信州大学 電子部品およびその製造方法
CN1720606A (zh) * 2002-11-29 2006-01-11 日本电气株式会社 半导体器件及其制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569410A (zh) * 2012-02-28 2012-07-11 上海华力微电子有限公司 双层隔离半导体纳米线mosfet
CN102569409A (zh) * 2012-02-28 2012-07-11 上海华力微电子有限公司 双层隔离纵向堆叠式半导体纳米线mosfet
CN102569410B (zh) * 2012-02-28 2014-06-11 上海华力微电子有限公司 双层隔离半导体纳米线mosfet
CN102569409B (zh) * 2012-02-28 2014-07-16 上海华力微电子有限公司 双层隔离纵向堆叠式半导体纳米线mosfet
KR101730994B1 (ko) * 2014-04-04 2017-04-27 알프스 덴키 가부시키가이샤 전자 부품
KR101730997B1 (ko) * 2014-04-04 2017-04-27 알프스 덴키 가부시키가이샤 전자 부품

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