CN102376625B - 一种半导体器件及其制造方法 - Google Patents
一种半导体器件及其制造方法 Download PDFInfo
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- CN102376625B CN102376625B CN201010250728.1A CN201010250728A CN102376625B CN 102376625 B CN102376625 B CN 102376625B CN 201010250728 A CN201010250728 A CN 201010250728A CN 102376625 B CN102376625 B CN 102376625B
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- contact plug
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 36
- 239000002923 metal particle Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 59
- 239000010410 layer Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 38
- 239000011229 interlayer Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 150000002910 rare earth metals Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 230000005328 spin glass Effects 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 238000001241 arc-discharge method Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 14
- 230000003197 catalytic effect Effects 0.000 abstract 3
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
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CN201010250728.1A CN102376625B (zh) | 2010-08-11 | 2010-08-11 | 一种半导体器件及其制造方法 |
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CN201010250728.1A CN102376625B (zh) | 2010-08-11 | 2010-08-11 | 一种半导体器件及其制造方法 |
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CN102376625A CN102376625A (zh) | 2012-03-14 |
CN102376625B true CN102376625B (zh) | 2014-03-19 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104167359B (zh) * | 2013-05-17 | 2018-05-15 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN104280614B (zh) * | 2013-07-09 | 2017-02-08 | 中国科学院微电子研究所 | 测量mos器件侧墙厚度相关参数的结构和方法 |
CN111585152B (zh) * | 2020-04-08 | 2022-02-08 | 中国科学院微电子研究所 | 用于激光器腔室的电极、激光器系统及曝光设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005109465A (ja) * | 2003-09-12 | 2005-04-21 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその作製方法 |
CN101208786A (zh) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | 具有改进的尖端轮廓的晶体管及其制造方法 |
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KR100251225B1 (ko) * | 1997-10-07 | 2000-04-15 | 윤종용 | 콘택저항을 감소시키기 위한 반도체 소자의 콘택형성 방법 |
US20030211724A1 (en) * | 2002-05-10 | 2003-11-13 | Texas Instruments Incorporated | Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005109465A (ja) * | 2003-09-12 | 2005-04-21 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその作製方法 |
CN101208786A (zh) * | 2005-06-30 | 2008-06-25 | 英特尔公司 | 具有改进的尖端轮廓的晶体管及其制造方法 |
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Effective date of registration: 20201217 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20220429 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |