JP4663348B2 - 配線基板、これを用いた固体撮像用半導体装置及びこれを用いた固体撮像用半導体装置の製造方法。 - Google Patents
配線基板、これを用いた固体撮像用半導体装置及びこれを用いた固体撮像用半導体装置の製造方法。 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 121
- 238000003384 imaging method Methods 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 12
- 150000003071 polychlorinated biphenyls Chemical class 0.000 claims description 8
- 230000000903 blocking effect Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229920006336 epoxy molding compound Polymers 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07314—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
- G01R1/07328—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support for testing printed circuit boards
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Theoretical Computer Science (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
Description
210: 第2の配線基板
215: ボンディングパッド
217: 連結端子
220: 受動素子
230: 第1の配線基板
232: 筐体部
234: リード
234a: リードの一端
234b: リードの他端
236: 開口部
238: 段差部
240: 半導体チップ
245: 電気的接続手段
250: レンズ部
260: 固体撮像用レンズ
265:赤外線遮断用フィルター
500: 固体撮像用半導体装置
510: 配線基板
515: 外部連結端子
600: 固体撮像用半導体装置
610: 第2の配線基板
615: 外部連結端子
700: 固体撮像用半導体装置
710: 第2の配線基板
712: 軟質FPC
714、716: 多層の硬質PCB
800: 固体撮像用半導体装置
830: 第1の配線基板
832: 筐体部
834a: リードの一端
834b: リードの他端
836: 開口部
838: 段差部
845: 電気的接続手段
900: 固体撮像用半導体装置
1000: 固体撮像用半導体装置
1100: 固体撮像用半導体装置
L1、L2: 左右幅
Claims (14)
- 固体撮像用レンズを備えるレンズ部と、
開口部を備え、上部が内側面から前記開口部内へ突出して前記内側面に段差部が形成され、前記固体撮像用レンズと前記開口部が対向するように前記レンズ部の下端と連結された第1の配線基板と、
前記第1の配線基板の下端と電気的に連結された第2の配線基板と、
前記開口部内に配置されるように前記第2の配線基板上に接合され、前記第1の配線基板と電気的に連結される半導体チップと、
前記第2の配線基板上に接合され、前記段差部の下部に配置される受動素子と、
を含むことを特徴とする固体撮像用半導体装置。 - 前記半導体チップは、前記固体撮像用レンズからの光を画像信号に変換し、前記画像信号を処理することを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記第1の配線基板は、PCB、CLCC及びPLCCより成る群から選択されたいずれか一つより成ることを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記第2の配線基板は、FPC、一つ以上の軟質PCBと一つ以上の硬質PCBの組合及びソケットタイプパッケージより成る群から選択されたいずれか一つより成ることを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記第1の配線基板と前記半導体チップは、ワイヤーボンディングにより電気的に連結されることを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記第1の配線基板と前記半導体チップは、フリップチップボンディングにより電気的に連結されることを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記固体撮像用レンズと所定の間隔をおいて対向し、前記固体撮像用レンズと前記半導体チップとの間に位置し、前記レンズ部内に固定位置する赤外線遮断用フィルターをさらに含むことを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 前記第2の配線基板の側面に形成された外部連結端子をさらに含むことを特徴とする、請求項1に記載の固体撮像用半導体装置。
- 第2の配線基板を提供する段階と、
前記第2の配線基板上に前記第2の配線基板と電気的に連結され、内部に開口部を備え、上部が内側面から前記開口部内へ突出して前記内側面に段差部が形成された第1の配線基板を提供する段階と、
前記開口部内に配置される半導体チップを前記第2の配線基板上に接合する段階と、
前記半導体チップを前記第1の配線基板と電気的に連結する段階と、
前記第1の配線基板の上面に固体撮像用レンズを備えるレンズ部を形成する段階と、
を含むことを特徴とする請求項1〜8のいずれか一項に記載の固体撮像用半導体装置の製造方法。 - 前記半導体チップを前記第1の配線基板と電気的に連結する段階は、フリップチップボンディングを用いることを特徴とする、請求項9に記載の固体撮像用半導体装置の製造方法。
- 前記半導体チップを前記第1の配線基板と電気的に連結する段階は、ワイヤーボンディングを用いることを特徴とする、請求項9に記載の固体撮像用半導体装置の製造方法。
- 前記第2の配線基板の側面に外部連結端子を形成する段階をさらに含むことを特徴とする、請求項9に記載の固体撮像用半導体装置の製造方法。
- 前記第1の配線基板は、PCB、CLCC及びPLCCより成る群から選択されたいずれか一つより成ることを特徴とする、請求項9に記載の固体撮像用半導体装置の製造方法。
- 前記第2の配線基板は、FPC、一つ以上の軟質PCBと一つ以上の硬質PCBの組合及びソケットタイプパッケージより成る群から選択されたいずれか一つより成ることを特徴とする、請求項9に記載の固体撮像用半導体装置の製造方法。
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KR1020040009029A KR100609012B1 (ko) | 2004-02-11 | 2004-02-11 | 배선기판 및 이를 이용한 고체 촬상용 반도체 장치 |
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JP4663348B2 true JP4663348B2 (ja) | 2011-04-06 |
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US (2) | US7659936B2 (ja) |
JP (1) | JP4663348B2 (ja) |
KR (1) | KR100609012B1 (ja) |
CN (1) | CN100527392C (ja) |
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US7005310B2 (en) * | 2002-08-14 | 2006-02-28 | Renesas Technology Corporation | Manufacturing method of solid-state image sensing device |
KR200308381Y1 (ko) | 2002-10-25 | 2003-03-28 | 카스크테크놀러지 주식회사 | 이미지 품질과 소형화를 위한 디지털 이미지 센서 모듈 |
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2004
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- 2005-02-08 JP JP2005032188A patent/JP4663348B2/ja not_active Expired - Fee Related
- 2005-02-08 CN CNB2005100565296A patent/CN100527392C/zh not_active Expired - Fee Related
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JP2001358997A (ja) * | 2000-06-12 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置 |
JP2002246574A (ja) * | 2001-02-15 | 2002-08-30 | Citizen Electronics Co Ltd | 半導体パッケージ及びその製造方法 |
JP2003158252A (ja) * | 2001-11-22 | 2003-05-30 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
Also Published As
Publication number | Publication date |
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US20100102445A1 (en) | 2010-04-29 |
KR100609012B1 (ko) | 2006-08-03 |
CN1674264A (zh) | 2005-09-28 |
CN100527392C (zh) | 2009-08-12 |
US7659936B2 (en) | 2010-02-09 |
JP2005229609A (ja) | 2005-08-25 |
US20050174469A1 (en) | 2005-08-11 |
US8054370B2 (en) | 2011-11-08 |
KR20050080865A (ko) | 2005-08-18 |
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