JP4656147B2 - 多孔質絶縁膜の形成方法および半導体装置 - Google Patents
多孔質絶縁膜の形成方法および半導体装置 Download PDFInfo
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- JP4656147B2 JP4656147B2 JP2007535437A JP2007535437A JP4656147B2 JP 4656147 B2 JP4656147 B2 JP 4656147B2 JP 2007535437 A JP2007535437 A JP 2007535437A JP 2007535437 A JP2007535437 A JP 2007535437A JP 4656147 B2 JP4656147 B2 JP 4656147B2
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Description
本発明の多孔質絶縁膜の形成方法に用いられる環状有機シロキサン原料および化合物原料について説明する。
本発明においては、層間絶縁膜として好適な多孔質絶縁膜を、少なくとも環状有機シロキサン原料を反応室に供給し、プラズマ気相成長法によって絶縁膜を形成する方法において、環状有機シロキサン原料と、化合物原料との混合ガスを用いて形成することができる。
本発明の第二の実施の形態として、以下に気体化した原料を反応室に供給し、多孔質絶縁膜を形成する実施の形態について図2を用いて説明する。図2は、原料ガスとして使用しようとする環状有機シロキサンの沸点が低く、人為的に加熱しないときには当該環状有機シロキサンが液体状態となる場合に好適に用いることができるガス供給部の要部の一例を示す概略図である。
本発明の第三の実施の形態として、以下に気体化した原料を反応室に供給し、多孔質絶縁膜を形成する実施の形態について図3を用いて説明する。図3は、原料ガスとして使用しようとする環状有機シロキサンの沸点が低く、人為的に加熱しないときには当該環状有機シロキサンが液体状態となる場合に好適に用いることができるガス供給部の要部の一例を示す概略図である。
本発明の実施例として、環状有機シロキサン原料として、式4に示す構造を有する原料を用い、化合物原料としてイソプロピルアルコール(IPA)を用いた場合について詳しく述べる。成膜装置としては、第一の実施の形態に示すような、平行平板型のプラズマCVD装置を用い、原料供給システムとしては、第二の実施の形態に示すような、混合原料用のシステムを用いた。
本発明の実施例として、環状有機シロキサン原料として、式4に示す構造を有する原料を用い、化合物原料として式5を用いた場合について詳しく述べる。成膜装置としては、第一の実施の形態に示すような、平行平板型のプラズマCVD装置を用い、原料供給システムとしては、第二の実施の形態に示すような、混合原料用のシステムを用いた。
本発明の実施例5では、本発明にて形成した多孔質絶縁膜を半導体素子が形成された半導体基板上の多層配線に用いた場合の配線構造について詳しく説明する。
10 反応室
20 ガス供給部
50 プラズマCVD装置
100 液体の環状有機シロキサン原料と化合物原料との混合原料
101 液体の環状有機シロキサン原料
102 原料タンク
103 液体の化合物原料
112 気化部
112b 気化器
113 シリコン酸化膜
200 MOSFET
201 半導体基板
202a、202b シリコン酸化膜
210a、210b 金属配線材
211、211a、211b 絶縁性バリア膜
212、212a、212b、212c ビア層間絶縁膜
213 配線層間絶縁膜
214 デュアルダマシン溝
215、215a、215b バリアメタル膜
216、216a ハードマスク膜
217a、217b エッチストップ膜
218a、218b、218c、218d、218e、218f、218g SiCN膜
219a、219b、219c、219d、219e 多孔質絶縁膜
220a、220b、220c、220d、220e、220f CuAl
221a、221b、221c、221d、221e、221f Ta/TaN
222 TiN
223 タングステン
224 シリコン酸窒化膜
225a、225b Ti/TiN
226 AlCu
VU、VU1、VU2 気化制御ユニット
Claims (9)
- 少なくとも環状有機シロキサン原料を反応室に供給し、プラズマ気相成長法によって絶縁膜を形成する方法において、
前記環状有機シロキサン原料と、前記環状有機シロキサン原料を構成する化学構造の一部を含む化合物原料との混合ガスを用い、
前記化合物原料が、前記環状有機シロキサンの反応前駆体を含むことを特徴とする多孔質絶縁膜の製造方法。 - 前記混合ガスは、気化した状態で、前記環状有機シロキサン原料100体積%に対する前記化合物原料の混合割合が、5〜200体積%の範囲内であることを特徴とする請求項1に記載の多孔質絶縁膜の製造方法。
- 前記混合ガスは前記環状有機シロキサン原料と前記化合物原料との混合原料を気化させることで形成することを特徴とする請求項1又は2に記載の多孔質絶縁膜の製造方法。
- 前記化合物原料は、前記環状有機シロキサン原料の側鎖の一部を含む前記化合物原料であることを特徴とする請求項1乃至3のいずれか一項に記載の多孔質絶縁膜の製造方法。
- 前記化合物原料が、少なくともメタノール、エタノール、プロパノール又はイソプロパノールのいずれか一を含むことを特徴とする請求項1乃至7のいずれか一項に記載の多孔質絶縁膜の製造方法。
- 少なくとも環状有機シロキサン原料が反応室に供給され、プラズマ気相成長法によって形成された絶縁膜を有する半導体装置であって、
前記環状有機シロキサン原料と、前記環状有機シロキサンの反応前駆体である化合物原料と、の混合ガスを用いて形成された多孔質絶縁膜を有することを特徴とする半導体装置。
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PCT/JP2006/317819 WO2007032261A1 (ja) | 2005-09-13 | 2006-09-08 | 多孔質絶縁膜の形成方法および半導体装置 |
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US7955950B2 (en) * | 2007-10-18 | 2011-06-07 | International Business Machines Corporation | Semiconductor-on-insulator substrate with a diffusion barrier |
US8211776B2 (en) * | 2010-01-05 | 2012-07-03 | International Business Machines Corporation | Integrated circuit line with electromigration barriers |
JP5864095B2 (ja) | 2010-02-18 | 2016-02-17 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
TW201348496A (zh) * | 2012-02-15 | 2013-12-01 | Renesas Electronics Corp | 多孔性絕緣膜的製造方法以及包含該膜的半導體裝置 |
JP5904866B2 (ja) | 2012-05-08 | 2016-04-20 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP5837869B2 (ja) * | 2012-12-06 | 2015-12-24 | 株式会社フジキン | 原料気化供給装置 |
US9076847B2 (en) | 2013-01-18 | 2015-07-07 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
US9123726B2 (en) | 2013-01-18 | 2015-09-01 | International Business Machines Corporation | Selective local metal cap layer formation for improved electromigration behavior |
JP6190192B2 (ja) * | 2013-07-16 | 2017-08-30 | ソニーセミコンダクタソリューションズ株式会社 | 放射線撮像装置および放射線撮像表示システム |
US9865798B2 (en) | 2015-02-24 | 2018-01-09 | Qualcomm Incorporated | Electrode structure for resistive memory device |
JP6109368B2 (ja) * | 2016-03-15 | 2017-04-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP6862049B2 (ja) * | 2017-03-31 | 2021-04-21 | 東ソー株式会社 | 環状シロキサン化合物、その製造方法、それを用いてなる電気絶縁膜の製造法及び膜 |
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