JP4646577B2 - 光電変換装置、その製造方法及び撮像システム - Google Patents

光電変換装置、その製造方法及び撮像システム Download PDF

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Publication number
JP4646577B2
JP4646577B2 JP2004254359A JP2004254359A JP4646577B2 JP 4646577 B2 JP4646577 B2 JP 4646577B2 JP 2004254359 A JP2004254359 A JP 2004254359A JP 2004254359 A JP2004254359 A JP 2004254359A JP 4646577 B2 JP4646577 B2 JP 4646577B2
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JP
Japan
Prior art keywords
region
impurity
mos transistor
photoelectric conversion
transfer mos
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Expired - Fee Related
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JP2004254359A
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English (en)
Japanese (ja)
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JP2006073734A5 (enExample
JP2006073734A (ja
Inventor
浩 譲原
清一 田村
隆一 三島
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004254359A priority Critical patent/JP4646577B2/ja
Priority to US11/214,846 priority patent/US7365380B2/en
Publication of JP2006073734A publication Critical patent/JP2006073734A/ja
Publication of JP2006073734A5 publication Critical patent/JP2006073734A5/ja
Priority to US12/041,738 priority patent/US7994552B2/en
Application granted granted Critical
Publication of JP4646577B2 publication Critical patent/JP4646577B2/ja
Priority to US13/173,007 priority patent/US8309997B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2004254359A 2004-09-01 2004-09-01 光電変換装置、その製造方法及び撮像システム Expired - Fee Related JP4646577B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004254359A JP4646577B2 (ja) 2004-09-01 2004-09-01 光電変換装置、その製造方法及び撮像システム
US11/214,846 US7365380B2 (en) 2004-09-01 2005-08-31 Photoelectric conversion device, method for manufacturing the same and image pickup system
US12/041,738 US7994552B2 (en) 2004-09-01 2008-03-04 Photoelectric conversion device, method for manufacturing the same and image pickup system
US13/173,007 US8309997B2 (en) 2004-09-01 2011-06-30 Photoelectric conversion device, method for manufacturing the same and image pickup system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004254359A JP4646577B2 (ja) 2004-09-01 2004-09-01 光電変換装置、その製造方法及び撮像システム

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010191389A Division JP5295188B2 (ja) 2010-08-27 2010-08-27 光電変換装置、その製造方法及び撮像システム

Publications (3)

Publication Number Publication Date
JP2006073734A JP2006073734A (ja) 2006-03-16
JP2006073734A5 JP2006073734A5 (enExample) 2007-10-18
JP4646577B2 true JP4646577B2 (ja) 2011-03-09

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Family Applications (1)

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JP2004254359A Expired - Fee Related JP4646577B2 (ja) 2004-09-01 2004-09-01 光電変換装置、その製造方法及び撮像システム

Country Status (2)

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US (3) US7365380B2 (enExample)
JP (1) JP4646577B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7737519B2 (en) * 2004-05-06 2010-06-15 Canon Kabushiki Kaisha Photoelectric conversion device and manufacturing method thereof
JP4496866B2 (ja) * 2004-07-08 2010-07-07 ソニー株式会社 固体撮像素子及びその製造方法
JP4646577B2 (ja) 2004-09-01 2011-03-09 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP4618786B2 (ja) * 2005-01-28 2011-01-26 キヤノン株式会社 固体撮像装置の製造方法
JP2007242697A (ja) * 2006-03-06 2007-09-20 Canon Inc 撮像装置および撮像システム
JP5305622B2 (ja) * 2006-08-31 2013-10-02 キヤノン株式会社 光電変換装置の製造方法
JP4315457B2 (ja) * 2006-08-31 2009-08-19 キヤノン株式会社 光電変換装置及び撮像システム
JP5159120B2 (ja) * 2007-02-23 2013-03-06 キヤノン株式会社 光電変換装置およびその製造方法
JP2008244021A (ja) * 2007-03-26 2008-10-09 Matsushita Electric Ind Co Ltd 固体撮像装置およびそれを用いたカメラ
JP5366396B2 (ja) * 2007-12-28 2013-12-11 キヤノン株式会社 光電変換装置の製造方法、半導体装置の製造方法、光電変換装置、及び撮像システム
JP4798205B2 (ja) 2008-10-23 2011-10-19 ソニー株式会社 固体撮像装置とその製造方法、及び撮像装置
JP5302644B2 (ja) * 2008-12-03 2013-10-02 キヤノン株式会社 撮像装置、及び撮像システム
JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP5558916B2 (ja) * 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
JP5563257B2 (ja) * 2009-08-28 2014-07-30 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
US20110169991A1 (en) * 2010-01-08 2011-07-14 Omnivision Technologies, Inc. Image sensor with epitaxially self-aligned photo sensors
JP6529221B2 (ja) 2014-05-14 2019-06-12 キヤノン株式会社 光電変換装置及びその製造方法
JP6541361B2 (ja) * 2015-02-05 2019-07-10 キヤノン株式会社 固体撮像装置

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
JP2901328B2 (ja) * 1990-09-20 1999-06-07 日本電気株式会社 固体撮像素子
JPH04326874A (ja) * 1991-04-26 1992-11-16 Fuji Photo Film Co Ltd ストロボ付ムービーカメラ
JPH0694978A (ja) * 1992-09-14 1994-04-08 Nikon Corp 視線検出装置
JP2557192Y2 (ja) * 1993-04-19 1997-12-08 マックス株式会社 鉄筋等の結束機用のワイヤリール
JPH07161958A (ja) * 1993-12-09 1995-06-23 Nec Corp 固体撮像装置
JPH11126893A (ja) * 1997-10-23 1999-05-11 Nikon Corp 固体撮像素子とその製造方法
US6023081A (en) * 1997-11-14 2000-02-08 Motorola, Inc. Semiconductor image sensor
US6051857A (en) * 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
JPH11274454A (ja) * 1998-03-19 1999-10-08 Canon Inc 固体撮像装置及びその形成方法
JP3592107B2 (ja) * 1998-11-27 2004-11-24 キヤノン株式会社 固体撮像装置およびカメラ
US6850278B1 (en) 1998-11-27 2005-02-01 Canon Kabushiki Kaisha Solid-state image pickup apparatus
JP4604296B2 (ja) * 1999-02-09 2011-01-05 ソニー株式会社 固体撮像装置及びその製造方法
JP3934827B2 (ja) 1999-06-30 2007-06-20 株式会社東芝 固体撮像装置
US6504194B1 (en) * 1999-12-01 2003-01-07 Innotech Corporation Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP2001196572A (ja) 2000-01-13 2001-07-19 Canon Inc 光電変換装置
JP2001284568A (ja) * 2000-03-31 2001-10-12 Sharp Corp 固体撮像装置
US20020047174A1 (en) * 2000-10-06 2002-04-25 Piet De Pauw Photodiode and methods for design optimization and generating fast signal current
JP4270742B2 (ja) * 2000-11-30 2009-06-03 Ｎｅｃエレクトロニクス株式会社 固体撮像装置
JP2004039671A (ja) 2002-06-28 2004-02-05 Canon Inc 光電変換装置及びその制御方法
JP3840214B2 (ja) 2003-01-06 2006-11-01 キヤノン株式会社 光電変換装置及び光電変換装置の製造方法及び同光電変換装置を用いたカメラ
US7323731B2 (en) * 2003-12-12 2008-01-29 Canon Kabushiki Kaisha Photoelectric conversion device, method of manufacturing photoelectric conversion device, and image pickup system
JP4646577B2 (ja) * 2004-09-01 2011-03-09 キヤノン株式会社 光電変換装置、その製造方法及び撮像システム
JP4618786B2 (ja) 2005-01-28 2011-01-26 キヤノン株式会社 固体撮像装置の製造方法
JP2006261597A (ja) 2005-03-18 2006-09-28 Canon Inc 固体撮像装置、その製造方法及びカメラ

Also Published As

Publication number Publication date
US7365380B2 (en) 2008-04-29
US20110254065A1 (en) 2011-10-20
US20060043442A1 (en) 2006-03-02
US20080157153A1 (en) 2008-07-03
US8309997B2 (en) 2012-11-13
US7994552B2 (en) 2011-08-09
JP2006073734A (ja) 2006-03-16

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