JP4642543B2 - 周縁露光装置、塗布、現像装置及び周縁露光方法 - Google Patents

周縁露光装置、塗布、現像装置及び周縁露光方法 Download PDF

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Publication number
JP4642543B2
JP4642543B2 JP2005136575A JP2005136575A JP4642543B2 JP 4642543 B2 JP4642543 B2 JP 4642543B2 JP 2005136575 A JP2005136575 A JP 2005136575A JP 2005136575 A JP2005136575 A JP 2005136575A JP 4642543 B2 JP4642543 B2 JP 4642543B2
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Japan
Prior art keywords
optical path
forming member
path forming
light
wafer
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Expired - Lifetime
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JP2005136575A
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English (en)
Japanese (ja)
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JP2006313862A (ja
Inventor
泰治 岩下
一郎 下村
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2005136575A priority Critical patent/JP4642543B2/ja
Priority to US11/417,163 priority patent/US7573054B2/en
Priority to TW095116240A priority patent/TW200710583A/zh
Priority to DE602006015126T priority patent/DE602006015126D1/de
Priority to EP06009433A priority patent/EP1722402B1/en
Priority to KR1020060041108A priority patent/KR101105568B1/ko
Priority to CNB2006100803180A priority patent/CN100465795C/zh
Publication of JP2006313862A publication Critical patent/JP2006313862A/ja
Application granted granted Critical
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H10P72/00—
    • H10P72/0448—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005136575A 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法 Expired - Lifetime JP4642543B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005136575A JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法
US11/417,163 US7573054B2 (en) 2005-05-09 2006-05-04 Edge exposure apparatus, coating and developing apparatus, and edge exposure method
DE602006015126T DE602006015126D1 (de) 2005-05-09 2006-05-08 Randbelichtungsapparat, Beschichtungs- und Entwicklungsapparat und Randbelichtungsmethode
EP06009433A EP1722402B1 (en) 2005-05-09 2006-05-08 Edge exposure apparatus, coating and developing apparatus, and edge exposure method
TW095116240A TW200710583A (en) 2005-05-09 2006-05-08 Peripheral exposure device, coating and developing apparatus and peripheral exposure method
KR1020060041108A KR101105568B1 (ko) 2005-05-09 2006-05-08 주변 노광 장치, 도포 현상 장치 및 주변 노광 방법
CNB2006100803180A CN100465795C (zh) 2005-05-09 2006-05-09 周缘曝光装置、涂敷显影装置及周缘曝光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005136575A JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法

Publications (2)

Publication Number Publication Date
JP2006313862A JP2006313862A (ja) 2006-11-16
JP4642543B2 true JP4642543B2 (ja) 2011-03-02

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JP2005136575A Expired - Lifetime JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法

Country Status (7)

Country Link
US (1) US7573054B2 (en:Method)
EP (1) EP1722402B1 (en:Method)
JP (1) JP4642543B2 (en:Method)
KR (1) KR101105568B1 (en:Method)
CN (1) CN100465795C (en:Method)
DE (1) DE602006015126D1 (en:Method)
TW (1) TW200710583A (en:Method)

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KR100733137B1 (ko) * 2006-06-14 2007-06-28 삼성전자주식회사 웨이퍼 에지 노광 장치
US7659965B2 (en) * 2006-10-06 2010-02-09 Wafertech, Llc High throughput wafer stage design for optical lithography exposure apparatus
CN101216679B (zh) * 2007-12-28 2011-03-30 上海微电子装备有限公司 一种边缘曝光装置
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
US8625076B2 (en) * 2010-02-09 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure module
JP5327135B2 (ja) * 2010-05-11 2013-10-30 東京エレクトロン株式会社 周縁露光装置及び周縁露光方法
CN103034062B (zh) * 2011-09-29 2014-11-26 中芯国际集成电路制造(北京)有限公司 用于晶片边缘曝光的方法、光学模块和自动聚焦系统
US9196515B2 (en) 2012-03-26 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
JP5873907B2 (ja) * 2013-09-03 2016-03-01 キヤノン・コンポーネンツ株式会社 照明装置、イメージセンサユニット、画像読取装置および画像形成装置
US9287151B2 (en) * 2014-01-10 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd Systems and method for transferring a semiconductor substrate
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
JP6661270B2 (ja) 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
US10558125B2 (en) * 2016-11-17 2020-02-11 Tokyo Electron Limited Exposure apparatus, exposure apparatus adjustment method and storage medium
US10747121B2 (en) * 2016-12-13 2020-08-18 Tokyo Electron Limited Optical processing apparatus and substrate processing apparatus
JP7124277B2 (ja) * 2016-12-13 2022-08-24 東京エレクトロン株式会社 光処理装置及び基板処理装置
CN108803245B (zh) * 2017-04-28 2020-04-10 上海微电子装备（集团）股份有限公司 硅片处理装置及方法
US10295909B2 (en) 2017-09-26 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED)
JP7312692B2 (ja) * 2019-12-25 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス エッジ露光装置およびエッジ露光方法
CN111427231A (zh) * 2020-04-09 2020-07-17 深圳市华星光电半导体显示技术有限公司 掩膜板和新型产线
CN112799282A (zh) * 2020-12-30 2021-05-14 六安优云通信技术有限公司 一种电源芯片制造用晶圆光刻显影蚀刻装置及其制备工艺

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Also Published As

Publication number Publication date
EP1722402B1 (en) 2010-06-30
EP1722402A3 (en) 2007-08-01
JP2006313862A (ja) 2006-11-16
TWI334061B (en:Method) 2010-12-01
DE602006015126D1 (de) 2010-08-12
US20060250594A1 (en) 2006-11-09
CN1862387A (zh) 2006-11-15
EP1722402A2 (en) 2006-11-15
TW200710583A (en) 2007-03-16
KR20060116167A (ko) 2006-11-14
US7573054B2 (en) 2009-08-11
CN100465795C (zh) 2009-03-04
KR101105568B1 (ko) 2012-01-17

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