TWI334061B - - Google Patents

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Publication number
TWI334061B
TWI334061B TW095116240A TW95116240A TWI334061B TW I334061 B TWI334061 B TW I334061B TW 095116240 A TW095116240 A TW 095116240A TW 95116240 A TW95116240 A TW 95116240A TW I334061 B TWI334061 B TW I334061B
Authority
TW
Taiwan
Prior art keywords
optical path
path forming
forming member
light
wafer
Prior art date
Application number
TW095116240A
Other languages
English (en)
Chinese (zh)
Other versions
TW200710583A (en
Inventor
Yasuharu Iwashita
Ichiro Shimomura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200710583A publication Critical patent/TW200710583A/zh
Application granted granted Critical
Publication of TWI334061B publication Critical patent/TWI334061B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
    • G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H10P72/00—
    • H10P72/0448—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW095116240A 2005-05-09 2006-05-08 Peripheral exposure device, coating and developing apparatus and peripheral exposure method TW200710583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005136575A JP4642543B2 (ja) 2005-05-09 2005-05-09 周縁露光装置、塗布、現像装置及び周縁露光方法

Publications (2)

Publication Number Publication Date
TW200710583A TW200710583A (en) 2007-03-16
TWI334061B true TWI334061B (en:Method) 2010-12-01

Family

ID=36808766

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116240A TW200710583A (en) 2005-05-09 2006-05-08 Peripheral exposure device, coating and developing apparatus and peripheral exposure method

Country Status (7)

Country Link
US (1) US7573054B2 (en:Method)
EP (1) EP1722402B1 (en:Method)
JP (1) JP4642543B2 (en:Method)
KR (1) KR101105568B1 (en:Method)
CN (1) CN100465795C (en:Method)
DE (1) DE602006015126D1 (en:Method)
TW (1) TW200710583A (en:Method)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100733137B1 (ko) * 2006-06-14 2007-06-28 삼성전자주식회사 웨이퍼 에지 노광 장치
US7659965B2 (en) * 2006-10-06 2010-02-09 Wafertech, Llc High throughput wafer stage design for optical lithography exposure apparatus
CN101216679B (zh) * 2007-12-28 2011-03-30 上海微电子装备有限公司 一种边缘曝光装置
US7901854B2 (en) * 2009-05-08 2011-03-08 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure unit
US8625076B2 (en) * 2010-02-09 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer edge exposure module
JP5327135B2 (ja) * 2010-05-11 2013-10-30 東京エレクトロン株式会社 周縁露光装置及び周縁露光方法
CN103034062B (zh) * 2011-09-29 2014-11-26 中芯国际集成电路制造(北京)有限公司 用于晶片边缘曝光的方法、光学模块和自动聚焦系统
US9196515B2 (en) 2012-03-26 2015-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
US8903532B2 (en) * 2012-03-26 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Litho cluster and modulization to enhance productivity
JP5873907B2 (ja) * 2013-09-03 2016-03-01 キヤノン・コンポーネンツ株式会社 照明装置、イメージセンサユニット、画像読取装置および画像形成装置
US9287151B2 (en) * 2014-01-10 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd Systems and method for transferring a semiconductor substrate
US9891529B2 (en) * 2014-03-28 2018-02-13 Taiwan Semiconductor Manufacturing Co., Ltd Light transmission device and method for semiconductor manufacturing process
JP6661270B2 (ja) 2015-01-16 2020-03-11 キヤノン株式会社 露光装置、露光システム、および物品の製造方法
JP6444909B2 (ja) * 2016-02-22 2018-12-26 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記録媒体
US10558125B2 (en) * 2016-11-17 2020-02-11 Tokyo Electron Limited Exposure apparatus, exposure apparatus adjustment method and storage medium
JP7124277B2 (ja) * 2016-12-13 2022-08-24 東京エレクトロン株式会社 光処理装置及び基板処理装置
US10747121B2 (en) * 2016-12-13 2020-08-18 Tokyo Electron Limited Optical processing apparatus and substrate processing apparatus
CN108803245B (zh) * 2017-04-28 2020-04-10 上海微电子装备（集团）股份有限公司 硅片处理装置及方法
US10295909B2 (en) 2017-09-26 2019-05-21 Taiwan Semiconductor Manufacturing Co., Ltd. Edge-exposure tool with an ultraviolet (UV) light emitting diode (LED)
JP7312692B2 (ja) * 2019-12-25 2023-07-21 株式会社Ｓｃｒｅｅｎホールディングス エッジ露光装置およびエッジ露光方法
CN111427231A (zh) * 2020-04-09 2020-07-17 深圳市华星光电半导体显示技术有限公司 掩膜板和新型产线
CN112799282A (zh) * 2020-12-30 2021-05-14 六安优云通信技术有限公司 一种电源芯片制造用晶圆光刻显影蚀刻装置及其制备工艺

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JPH053214Y2 (en:Method) * 1987-01-06 1993-01-26
KR960016175B1 (en) 1987-08-28 1996-12-04 Tokyo Electron Ltd Exposing method and apparatus thereof
JPH0750680B2 (ja) * 1988-12-28 1995-05-31 ウシオ電機株式会社 ウエハ周辺露光装置
JPH0775220B2 (ja) * 1991-03-20 1995-08-09 ウシオ電機株式会社 ウエハ上の不要レジスト露光方法
JPH06112103A (ja) * 1992-09-24 1994-04-22 Mitsubishi Electric Corp 露光装置および露光方法
KR0179163B1 (ko) * 1995-12-26 1999-03-20 문정환 비휘발성 메모리 셀 및 그 제조방법
JP3237522B2 (ja) 1996-02-05 2001-12-10 ウシオ電機株式会社 ウエハ周辺露光方法および装置
JPH09283396A (ja) * 1996-04-08 1997-10-31 Sony Corp 周辺露光装置および周辺露光方法
JP2924881B2 (ja) * 1997-01-27 1999-07-26 住友電気工業株式会社 波長可変光源およびｏｔｄｒ装置
JPH10233354A (ja) * 1997-02-20 1998-09-02 Ushio Inc 紫外線照射装置
JPH10335216A (ja) 1997-05-30 1998-12-18 Dainippon Screen Mfg Co Ltd 基板処理方法
KR100250152B1 (ko) * 1997-11-15 2000-03-15 유무성 노광장치
JP3356047B2 (ja) 1997-11-26 2002-12-09 ウシオ電機株式会社 ウエハ周辺露光装置
JP2000077299A (ja) * 1998-08-28 2000-03-14 Dainippon Screen Mfg Co Ltd 基板端縁露光装置
US6240874B1 (en) 1999-05-27 2001-06-05 Advanced Micro Devices, Inc. Integrated edge exposure and hot/cool plate for a wafer track system
JP2001007012A (ja) * 1999-06-24 2001-01-12 Dainippon Screen Mfg Co Ltd 露光装置
WO2001011396A1 (en) * 1999-08-11 2001-02-15 Luckoff Display Corporation Direction of optical signals by a movable diffractive optical element
US6618118B2 (en) * 2001-05-08 2003-09-09 Asml Netherlands B.V. Optical exposure method, device manufacturing method and lithographic projection apparatus
KR100387418B1 (ko) 2001-05-23 2003-06-18 한국디엔에스 주식회사 반도체 제조 공정에서 사용되는 스피너 시스템
KR20020094504A (ko) 2001-06-12 2002-12-18 삼성전자 주식회사 웨이퍼 에지 노광 장치
JP4090273B2 (ja) 2002-05-23 2008-05-28 株式会社Ｓｏｋｕｄｏ エッジ露光装置
KR100478730B1 (ko) * 2002-07-30 2005-03-24 주식회사 제일 기판 주변 노광 장치
KR20040024165A (ko) 2002-09-13 2004-03-20 삼성전자주식회사 웨이퍼 에지 노광 장치
JP4318913B2 (ja) * 2002-12-26 2009-08-26 東京エレクトロン株式会社 塗布処理装置
JP4083100B2 (ja) 2003-09-22 2008-04-30 株式会社Ｓｏｋｕｄｏ 周縁部露光装置
KR100585170B1 (ko) * 2004-12-27 2006-06-02 삼성전자주식회사 트윈 기판 스테이지를 구비한 스캐너 장치, 이를 포함하는반도체 사진 설비 및 상기 설비를 이용한 반도체 소자의제조방법

Also Published As

Publication number Publication date
US7573054B2 (en) 2009-08-11
CN1862387A (zh) 2006-11-15
JP2006313862A (ja) 2006-11-16
CN100465795C (zh) 2009-03-04
KR101105568B1 (ko) 2012-01-17
EP1722402A3 (en) 2007-08-01
JP4642543B2 (ja) 2011-03-02
TW200710583A (en) 2007-03-16
KR20060116167A (ko) 2006-11-14
DE602006015126D1 (de) 2010-08-12
EP1722402A2 (en) 2006-11-15
US20060250594A1 (en) 2006-11-09
EP1722402B1 (en) 2010-06-30

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