JP4637221B2 - ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 - Google Patents

ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 Download PDF

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Publication number
JP4637221B2
JP4637221B2 JP2008246883A JP2008246883A JP4637221B2 JP 4637221 B2 JP4637221 B2 JP 4637221B2 JP 2008246883 A JP2008246883 A JP 2008246883A JP 2008246883 A JP2008246883 A JP 2008246883A JP 4637221 B2 JP4637221 B2 JP 4637221B2
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group
general formula
photosensitive resin
resin composition
structural unit
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JP2008246883A
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Japanese (ja)
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JP2009098673A5 (OSRAM
JP2009098673A (ja
Inventor
敏 滝田
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2008246883A priority Critical patent/JP4637221B2/ja
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to KR1020107006294A priority patent/KR101021187B1/ko
Priority to PCT/JP2008/067496 priority patent/WO2009041619A1/ja
Priority to TW097137302A priority patent/TWI345137B/zh
Priority to EP08833502A priority patent/EP2196852A4/en
Priority to US12/680,273 priority patent/US9034440B2/en
Priority to CN2008801088385A priority patent/CN101809503B/zh
Publication of JP2009098673A publication Critical patent/JP2009098673A/ja
Publication of JP2009098673A5 publication Critical patent/JP2009098673A5/ja
Application granted granted Critical
Publication of JP4637221B2 publication Critical patent/JP4637221B2/ja
Priority to US14/684,812 priority patent/US9964848B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2008246883A 2007-09-28 2008-09-25 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法 Active JP4637221B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2008246883A JP4637221B2 (ja) 2007-09-28 2008-09-25 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
PCT/JP2008/067496 WO2009041619A1 (ja) 2007-09-28 2008-09-26 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
TW097137302A TWI345137B (en) 2007-09-28 2008-09-26 Positive photosensitive resin composition and curable film forming method using the same
EP08833502A EP2196852A4 (en) 2007-09-28 2008-09-26 PHOTOSENSITIVE RESIN COMPOSITION OF POSITIVE TYPE, AND METHOD OF FORMING CURED FILM USING THE SAME
KR1020107006294A KR101021187B1 (ko) 2007-09-28 2008-09-26 포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막 형성 방법
US12/680,273 US9034440B2 (en) 2007-09-28 2008-09-26 Positive photosensitive resin composition and cured film forming method using the same
CN2008801088385A CN101809503B (zh) 2007-09-28 2008-09-26 正型感光性树脂组合物、以及使用该组合物形成固化膜的方法
US14/684,812 US9964848B2 (en) 2007-09-28 2015-04-13 Positive photosensitive resin composition and cured film forming method using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007256203 2007-09-28
JP2008246883A JP4637221B2 (ja) 2007-09-28 2008-09-25 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法

Publications (3)

Publication Number Publication Date
JP2009098673A JP2009098673A (ja) 2009-05-07
JP2009098673A5 JP2009098673A5 (OSRAM) 2010-08-12
JP4637221B2 true JP4637221B2 (ja) 2011-02-23

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Country Status (7)

Country Link
US (2) US9034440B2 (OSRAM)
EP (1) EP2196852A4 (OSRAM)
JP (1) JP4637221B2 (OSRAM)
KR (1) KR101021187B1 (OSRAM)
CN (1) CN101809503B (OSRAM)
TW (1) TWI345137B (OSRAM)
WO (1) WO2009041619A1 (OSRAM)

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TWI518458B (zh) 2008-03-28 2016-01-21 富士軟片股份有限公司 正型感光性樹脂組成物及使用它的硬化膜形成方法
JP4718623B2 (ja) * 2008-03-28 2011-07-06 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
KR20110022602A (ko) 2008-07-15 2011-03-07 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물 및 레지스트 패턴 형성 방법
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JP5520590B2 (ja) * 2009-10-06 2014-06-11 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
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JP5528314B2 (ja) * 2010-01-20 2014-06-25 富士フイルム株式会社 硬化膜の製造方法、感光性樹脂組成物、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5729565B2 (ja) * 2010-02-02 2015-06-03 日産化学工業株式会社 ポジ型感光性樹脂組成物及び撥液性被膜
JP4591625B1 (ja) * 2010-04-01 2010-12-01 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5454321B2 (ja) 2010-04-14 2014-03-26 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
JP5625460B2 (ja) * 2010-04-15 2014-11-19 Jsr株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
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KR101404005B1 (ko) * 2010-04-28 2014-06-05 제이에스알 가부시끼가이샤 포지티브형 감방사선성 조성물, 표시 소자용 층간 절연막 및 그 형성 방법
KR20110126046A (ko) * 2010-05-14 2011-11-22 제이에스알 가부시끼가이샤 액정 표시 소자, 포지티브형 감방사선성 조성물, 액정 표시 소자용 층간 절연막 및 그 형성 방법
JP5703819B2 (ja) * 2010-05-14 2015-04-22 Jsr株式会社 液晶表示素子、ポジ型感放射線性組成物、液晶表示素子用層間絶縁膜及びその形成方法
JP5771377B2 (ja) * 2010-10-05 2015-08-26 株式会社ジャパンディスプレイ 表示装置の製造方法
JP5536625B2 (ja) * 2010-12-15 2014-07-02 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5510347B2 (ja) * 2011-01-26 2014-06-04 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
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KR101909072B1 (ko) * 2011-08-31 2018-10-18 후지필름 가부시키가이샤 감광성 수지 조성물, 경화막, 경화막의 형성 방법, 유기 ｅｌ 표시 장치, 및, 액정 표시 장치
JP5433654B2 (ja) * 2011-08-31 2014-03-05 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP5686708B2 (ja) * 2011-09-16 2015-03-18 富士フイルム株式会社 ポジ型感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
WO2013154075A1 (ja) * 2012-04-09 2013-10-17 旭硝子株式会社 微細パターンを表面に有する物品の製造方法
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JP5871706B2 (ja) * 2012-04-27 2016-03-01 富士フイルム株式会社 化学増幅型ポジ型感光性樹脂組成物および層間絶縁膜
CN102981291B (zh) 2012-12-04 2015-06-17 深圳市华星光电技术有限公司 断线修补方法和断线修补结构
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KR102298153B1 (ko) * 2016-10-12 2021-09-08 리지필드 액퀴지션 화학 증폭형 포지티브 포토레지스트 조성물 및 이를 사용하는 패턴 형성 방법
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US20150212406A1 (en) 2015-07-30
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