KR101021187B1 - 포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막 형성 방법 - Google Patents

포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막 형성 방법 Download PDF

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Publication number
KR101021187B1
KR101021187B1 KR1020107006294A KR20107006294A KR101021187B1 KR 101021187 B1 KR101021187 B1 KR 101021187B1 KR 1020107006294 A KR1020107006294 A KR 1020107006294A KR 20107006294 A KR20107006294 A KR 20107006294A KR 101021187 B1 KR101021187 B1 KR 101021187B1
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South Korea
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group
general formula
photosensitive resin
resin composition
structural unit
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Korean (ko)
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KR20100055508A (ko
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사토시 타키타
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/202—LCD, i.e. liquid crystal displays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2323/00—Functional layers of liquid crystal optical display excluding electroactive liquid crystal layer characterised by chemical composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Liquid Crystal (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020107006294A 2007-09-28 2008-09-26 포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막 형성 방법 Expired - Fee Related KR101021187B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007256203 2007-09-28
JPJP-P-2007-256203 2007-09-28
JPJP-P-2008-246883 2008-09-25
JP2008246883A JP4637221B2 (ja) 2007-09-28 2008-09-25 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法

Publications (2)

Publication Number Publication Date
KR20100055508A KR20100055508A (ko) 2010-05-26
KR101021187B1 true KR101021187B1 (ko) 2011-03-15

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KR1020107006294A Expired - Fee Related KR101021187B1 (ko) 2007-09-28 2008-09-26 포지티브형 감광성 수지 조성물 및 그것을 사용한 경화막 형성 방법

Country Status (7)

Country Link
US (2) US9034440B2 (OSRAM)
EP (1) EP2196852A4 (OSRAM)
JP (1) JP4637221B2 (OSRAM)
KR (1) KR101021187B1 (OSRAM)
CN (1) CN101809503B (OSRAM)
TW (1) TWI345137B (OSRAM)
WO (1) WO2009041619A1 (OSRAM)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4637209B2 (ja) 2007-06-05 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP4718623B2 (ja) * 2008-03-28 2011-07-06 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
TWI518458B (zh) * 2008-03-28 2016-01-21 富士軟片股份有限公司 正型感光性樹脂組成物及使用它的硬化膜形成方法
CN102099749A (zh) * 2008-07-15 2011-06-15 Jsr株式会社 正型放射线敏感性组合物和抗蚀图案形成方法
JP2010026460A (ja) * 2008-07-24 2010-02-04 Fujifilm Corp ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5538039B2 (ja) * 2009-05-01 2014-07-02 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
JP5452102B2 (ja) * 2009-07-02 2014-03-26 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP5520590B2 (ja) 2009-10-06 2014-06-11 富士フイルム株式会社 パターン形成方法、化学増幅型レジスト組成物及びレジスト膜
JP5506621B2 (ja) * 2009-10-16 2014-05-28 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP5451569B2 (ja) * 2009-10-16 2014-03-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の形成方法、有機ｅｌ表示装置、及び、液晶表示装置
JP5425031B2 (ja) * 2009-10-16 2014-02-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5451570B2 (ja) * 2009-10-16 2014-03-26 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
JP5623896B2 (ja) * 2010-01-15 2014-11-12 富士フイルム株式会社 感光性樹脂組成物、硬化膜の形成方法、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
KR101618897B1 (ko) 2010-01-20 2016-05-09 후지필름 가부시키가이샤 경화막의 제조 방법, 감광성 수지 조성물, 경화 막, 유기 ｅｌ 표시 장치, 및 액정 표시 장치
JP5528314B2 (ja) * 2010-01-20 2014-06-25 富士フイルム株式会社 硬化膜の製造方法、感光性樹脂組成物、硬化膜、有機ｅｌ表示装置、及び、液晶表示装置
CN102741752B (zh) * 2010-02-02 2014-08-20 日产化学工业株式会社 正型感光性树脂组合物和拒液性被膜
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JP5771377B2 (ja) * 2010-10-05 2015-08-26 株式会社ジャパンディスプレイ 表示装置の製造方法
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JP5510347B2 (ja) * 2011-01-26 2014-06-04 Ｊｓｒ株式会社 ポジ型感放射線性組成物、層間絶縁膜及びその形成方法
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TWI796410B (zh) * 2018-12-25 2023-03-21 奇美實業股份有限公司 化學增幅型正型感光性樹脂組成物及其應用
WO2025204201A1 (ja) * 2024-03-29 2025-10-02 三井化学Ictマテリア株式会社 表面保護用組成物および表面保護膜

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003195506A (ja) 2001-12-27 2003-07-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
JP2006154569A (ja) 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法
JP2006251296A (ja) 2005-03-10 2006-09-21 Kyowa Hakko Chemical Co Ltd カラーフィルター
JP2007186680A (ja) 2005-12-15 2007-07-26 Nec Corp アミド誘導体、重合体、化学増幅型感光性樹脂組成物、及びパターン形成方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1512814A (en) * 1975-08-13 1978-06-01 Ciba Geigy Ag Epoxide resins
JP2961722B2 (ja) 1991-12-11 1999-10-12 ジェイエスアール株式会社 感放射線性樹脂組成物
US5362597A (en) 1991-05-30 1994-11-08 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
MY117352A (en) * 1995-10-31 2004-06-30 Ciba Sc Holding Ag Oximesulfonic acid esters and the use thereof as latent sulfonic acids.
JP3852867B2 (ja) 1996-11-22 2006-12-06 東京応化工業株式会社 感光性樹脂組成物およびこれを用いたパターン形成方法
JP3844824B2 (ja) * 1996-11-26 2006-11-15 株式会社Ａｄｅｋａ エネルギー線硬化性エポキシ樹脂組成物、光学的立体造形用樹脂組成物及び光学的立体造形方法
DE69821049T2 (de) * 1997-05-09 2004-10-21 Fuji Photo Film Co Ltd Positiv arbeitende lichtempfindliche Zusammensetzung
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
US6232038B1 (en) * 1998-10-07 2001-05-15 Mitsubishi Chemical Corporation Photosensitive composition, image-forming material and image-forming method employing it
SG97168A1 (en) * 1999-12-15 2003-07-18 Ciba Sc Holding Ag Photosensitive resin composition
KR100748219B1 (ko) * 2000-03-29 2007-08-09 각고우호우진 가나가와 다이가쿠 광경화성·열경화성 수지조성물, 그의 감광성 드라이필름및 이를 이용한 패턴 형성방법
US6576394B1 (en) * 2000-06-16 2003-06-10 Clariant Finance (Bvi) Limited Negative-acting chemically amplified photoresist composition
TWI226973B (en) * 2001-03-19 2005-01-21 Fuji Photo Film Co Ltd Positive resist composition
EP1392675B1 (en) * 2001-06-01 2005-02-09 Ciba SC Holding AG Substituted oxime derivatives and the use thereof as latent acids
JP4269740B2 (ja) 2002-03-28 2009-05-27 住友化学株式会社 ポジ型化学増幅型レジスト組成物
US7399577B2 (en) * 2003-02-19 2008-07-15 Ciba Specialty Chemicals Corporation Halogenated oxime derivatives and the use thereof
JP4207604B2 (ja) 2003-03-03 2009-01-14 Ｊｓｒ株式会社 感放射線性樹脂組成物、層間絶縁膜およびマイクロレンズ、ならびにそれらの形成方法
JP4046023B2 (ja) * 2003-06-23 2008-02-13 Ｊｓｒ株式会社 硬化性樹脂組成物、保護膜および保護膜の形成方法
JP4131864B2 (ja) * 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法
JP4425776B2 (ja) * 2004-12-24 2010-03-03 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US7799509B2 (en) * 2005-06-04 2010-09-21 Samsung Electronics Co., Ltd. Photosensitive resin composition, method of manufacturing a thin-film transistor substrate, and method of manufacturing a common electrode substrate using the same
JP4644857B2 (ja) * 2005-07-22 2011-03-09 昭和電工株式会社 感光性樹脂組成物
JP4762630B2 (ja) * 2005-08-03 2011-08-31 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
JP2007128062A (ja) 2005-10-07 2007-05-24 Jsr Corp 感放射線性樹脂組成物、スペーサーの形成方法およびスペーサー
JP2007147809A (ja) * 2005-11-25 2007-06-14 Chisso Corp ポジ型感光性樹脂組成物およびそれを用いた表示素子
JP4637209B2 (ja) * 2007-06-05 2011-02-23 富士フイルム株式会社 ポジ型感光性樹脂組成物及びそれを用いた硬化膜形成方法
TWI518458B (zh) * 2008-03-28 2016-01-21 富士軟片股份有限公司 正型感光性樹脂組成物及使用它的硬化膜形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003195506A (ja) 2001-12-27 2003-07-09 Sumitomo Chem Co Ltd 化学増幅型レジスト組成物
JP2006154569A (ja) 2004-11-30 2006-06-15 Tokyo Ohka Kogyo Co Ltd レジストパターンおよび導体パターンの製造方法
JP2006251296A (ja) 2005-03-10 2006-09-21 Kyowa Hakko Chemical Co Ltd カラーフィルター
JP2007186680A (ja) 2005-12-15 2007-07-26 Nec Corp アミド誘導体、重合体、化学増幅型感光性樹脂組成物、及びパターン形成方法

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