JP4632018B2 - 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ - Google Patents

強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ Download PDF

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Publication number
JP4632018B2
JP4632018B2 JP2003355046A JP2003355046A JP4632018B2 JP 4632018 B2 JP4632018 B2 JP 4632018B2 JP 2003355046 A JP2003355046 A JP 2003355046A JP 2003355046 A JP2003355046 A JP 2003355046A JP 4632018 B2 JP4632018 B2 JP 4632018B2
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Japan
Prior art keywords
ferroelectric
film
electrode
particles
manufacturing
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Expired - Fee Related
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JP2003355046A
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English (en)
Japanese (ja)
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JP2005123310A5 (enExample
JP2005123310A (ja
Inventor
健 木島
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Seiko Epson Corp
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Seiko Epson Corp
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Priority to JP2003355046A priority Critical patent/JP4632018B2/ja
Priority to US10/960,001 priority patent/US7056750B2/en
Priority to CNB2004100841060A priority patent/CN100364065C/zh
Publication of JP2005123310A publication Critical patent/JP2005123310A/ja
Publication of JP2005123310A5 publication Critical patent/JP2005123310A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2003355046A 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ Expired - Fee Related JP4632018B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ
US10/960,001 US7056750B2 (en) 2003-10-15 2004-10-08 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
CNB2004100841060A CN100364065C (zh) 2003-10-15 2004-10-15 强电介质膜的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2005123310A JP2005123310A (ja) 2005-05-12
JP2005123310A5 JP2005123310A5 (enExample) 2006-11-24
JP4632018B2 true JP4632018B2 (ja) 2011-02-16

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JP2003355046A Expired - Fee Related JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

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US (1) US7056750B2 (enExample)
JP (1) JP4632018B2 (enExample)
CN (1) CN100364065C (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3937174B2 (ja) 2004-03-22 2007-06-27 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
JP4983633B2 (ja) * 2008-02-07 2012-07-25 セイコーエプソン株式会社 誘電体膜の成膜方法および誘電体デバイスの製造方法
KR101928438B1 (ko) 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
CN106683882B (zh) * 2017-01-19 2018-07-06 广州天极电子科技有限公司 一种制备薄膜电容器的方法
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof
US10497774B2 (en) * 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818916A (ja) * 1981-07-27 1983-02-03 ソニー株式会社 焦電体の製造方法
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JP3206454B2 (ja) * 1996-10-21 2001-09-10 東海ゴム工業株式会社 複合酸化物薄膜及びその製造方法
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
JP2000150295A (ja) * 1998-11-17 2000-05-30 Hokuriku Electric Ind Co Ltd コンデンサ及びその製造方法
JP2000328223A (ja) * 1999-05-25 2000-11-28 Agency Of Ind Science & Technol 積層構造体及びその原料粉、及び、圧電アクチュエータ
JP4200639B2 (ja) * 2000-06-13 2008-12-24 宇部興産株式会社 Ｐｚｔ系結晶膜素子の実装方法
US6724520B2 (en) * 2000-10-04 2004-04-20 Seiko Epson Corporation Electrophoretic device and method of manufacturing it
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법
JP2003218102A (ja) * 2002-01-23 2003-07-31 Komatsu Ltd 誘電体膜の処理装置及び誘電体膜の処理方法

Also Published As

Publication number Publication date
CN100364065C (zh) 2008-01-23
US7056750B2 (en) 2006-06-06
CN1607650A (zh) 2005-04-20
JP2005123310A (ja) 2005-05-12
US20050117439A1 (en) 2005-06-02

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