JP4632018B2 - 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ - Google Patents

強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ Download PDF

Info

Publication number
JP4632018B2
JP4632018B2 JP2003355046A JP2003355046A JP4632018B2 JP 4632018 B2 JP4632018 B2 JP 4632018B2 JP 2003355046 A JP2003355046 A JP 2003355046A JP 2003355046 A JP2003355046 A JP 2003355046A JP 4632018 B2 JP4632018 B2 JP 4632018B2
Authority
JP
Japan
Prior art keywords
ferroelectric
film
electrode
particles
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003355046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005123310A5 (enExample
JP2005123310A (ja
Inventor
健 木島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003355046A priority Critical patent/JP4632018B2/ja
Priority to US10/960,001 priority patent/US7056750B2/en
Priority to CNB2004100841060A priority patent/CN100364065C/zh
Publication of JP2005123310A publication Critical patent/JP2005123310A/ja
Publication of JP2005123310A5 publication Critical patent/JP2005123310A5/ja
Application granted granted Critical
Publication of JP4632018B2 publication Critical patent/JP4632018B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2003355046A 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ Expired - Fee Related JP4632018B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ
US10/960,001 US7056750B2 (en) 2003-10-15 2004-10-08 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
CNB2004100841060A CN100364065C (zh) 2003-10-15 2004-10-15 强电介质膜的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2005123310A JP2005123310A (ja) 2005-05-12
JP2005123310A5 JP2005123310A5 (enExample) 2006-11-24
JP4632018B2 true JP4632018B2 (ja) 2011-02-16

Family

ID=34612779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003355046A Expired - Fee Related JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

Country Status (3)

Country Link
US (1) US7056750B2 (enExample)
JP (1) JP4632018B2 (enExample)
CN (1) CN100364065C (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3937174B2 (ja) 2004-03-22 2007-06-27 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
JP4983633B2 (ja) * 2008-02-07 2012-07-25 セイコーエプソン株式会社 誘電体膜の成膜方法および誘電体デバイスの製造方法
KR101928438B1 (ko) * 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
CN106683882B (zh) * 2017-01-19 2018-07-06 广州天极电子科技有限公司 一种制备薄膜电容器的方法
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof
US10497774B2 (en) 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818916A (ja) * 1981-07-27 1983-02-03 ソニー株式会社 焦電体の製造方法
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JP3206454B2 (ja) * 1996-10-21 2001-09-10 東海ゴム工業株式会社 複合酸化物薄膜及びその製造方法
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
JP2000150295A (ja) * 1998-11-17 2000-05-30 Hokuriku Electric Ind Co Ltd コンデンサ及びその製造方法
JP2000328223A (ja) * 1999-05-25 2000-11-28 Agency Of Ind Science & Technol 積層構造体及びその原料粉、及び、圧電アクチュエータ
JP4200639B2 (ja) * 2000-06-13 2008-12-24 宇部興産株式会社 Ｐｚｔ系結晶膜素子の実装方法
EP1195603B1 (en) * 2000-10-04 2006-06-07 Seiko Epson Corporation Electrophoretic device and method of manufacturing it
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법
JP2003218102A (ja) * 2002-01-23 2003-07-31 Komatsu Ltd 誘電体膜の処理装置及び誘電体膜の処理方法

Also Published As

Publication number Publication date
JP2005123310A (ja) 2005-05-12
CN100364065C (zh) 2008-01-23
CN1607650A (zh) 2005-04-20
US7056750B2 (en) 2006-06-06
US20050117439A1 (en) 2005-06-02

Similar Documents

Publication Publication Date Title
JP3258899B2 (ja) 強誘電体薄膜素子、それを用いた半導体装置、及び強誘電体薄膜素子の製造方法
US10192972B2 (en) Semiconductor ferroelectric storage transistor and method for manufacturing same
JPH07502150A (ja) 集積回路メモリー
JP2001511600A (ja) 層状超格子材料を製造し、かつ酸素に曝さずに層状超格子材料を含む電子装置を作製するための工程
JP2008028228A (ja) 可変抵抗素子および抵抗変化型メモリ装置
JP4632018B2 (ja) 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ
KR100737636B1 (ko) 금속 박막 및 그 형성 방법, 유전체 캐패시터 및 그 제조방법과 반도체 장치
JPH1012832A (ja) 強誘電体キャパシタの作製方法及び強誘電体メモリ装置の製造方法
JP4811551B2 (ja) 強誘電体膜の製造方法および強誘電体キャパシタの製造方法
CN1319256A (zh) 减少四方性的铁电薄膜
JP4596117B2 (ja) 強誘電体膜の製造方法
JPH02154389A (ja) 強誘電体メモリ
JP2007318018A (ja) 強誘電体メモリセル及び強誘電体メモリセルの製造方法
KR20010109957A (ko) 엘비티 용액, 엘비티 용액의 제조방법 및 이를 이용한엘비티 박막과 전자 소자의 제조방법
JP3937174B2 (ja) 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
JP3924928B2 (ja) 強誘電体材料及び強誘電体メモリ
JP2004319995A (ja) 強誘電体膜およびその製造方法ならびに半導体装置
JPH10270646A (ja) 強誘電体薄膜素子の製造方法及び半導体装置
JP3764650B2 (ja) 強誘電体キャパシタとその製造方法およびその強誘電体キャパシタを備えた半導体装置
JP4349293B2 (ja) 強誘電体薄膜の製造方法、圧電素子、強誘電体メモリ
JP4655019B2 (ja) 可変抵抗素子
JPH08249876A (ja) 強誘電体デバイス
JPH0778944A (ja) 不揮発性メモリ
TW200409369A (en) A fabrication method for a ferroelectric capacitor applied in a low driving voltage
JP2006120513A (ja) 強誘電体膜の形成方法および強誘電体膜

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20060112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061005

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061005

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100723

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100728

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100922

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101020

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101102

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131126

Year of fee payment: 3

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313532

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees