JPH07502150A - 集積回路メモリー - Google Patents
集積回路メモリーInfo
- Publication number
- JPH07502150A JPH07502150A JP5511048A JP51104893A JPH07502150A JP H07502150 A JPH07502150 A JP H07502150A JP 5511048 A JP5511048 A JP 5511048A JP 51104893 A JP51104893 A JP 51104893A JP H07502150 A JPH07502150 A JP H07502150A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- materials
- integrated circuit
- memory
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title claims description 82
- 239000000463 material Substances 0.000 claims description 268
- 239000003990 capacitor Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 32
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 239000010936 titanium Substances 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 18
- 230000010287 polarization Effects 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 16
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052712 strontium Inorganic materials 0.000 claims description 11
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 11
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 7
- 150000001450 anions Chemical class 0.000 claims description 6
- 229910002115 bismuth titanate Inorganic materials 0.000 claims description 6
- 239000010955 niobium Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- ZUJVZHIDQJPCHU-UHFFFAOYSA-N [Ba].[Bi] Chemical compound [Ba].[Bi] ZUJVZHIDQJPCHU-UHFFFAOYSA-N 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 239000006104 solid solution Substances 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- -1 hubnium Chemical compound 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000000460 chlorine Substances 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052744 lithium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 36
- 210000004027 cell Anatomy 0.000 description 33
- 238000005259 measurement Methods 0.000 description 26
- 239000000243 solution Substances 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 22
- 230000008569 process Effects 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 238000012360 testing method Methods 0.000 description 20
- 229910052697 platinum Inorganic materials 0.000 description 18
- 239000003989 dielectric material Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 230000006870 function Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 8
- 239000006096 absorbing agent Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000035939 shock Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000008096 xylene Substances 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005621 ferroelectricity Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 3
- NUMHJBONQMZPBW-UHFFFAOYSA-K bis(2-ethylhexanoyloxy)bismuthanyl 2-ethylhexanoate Chemical compound [Bi+3].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O NUMHJBONQMZPBW-UHFFFAOYSA-K 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000009089 cytolysis Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000004069 differentiation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 description 1
- SHXWCVYOXRDMCX-UHFFFAOYSA-N 3,4-methylenedioxymethamphetamine Chemical compound CNC(C)CC1=CC=C2OCOC2=C1 SHXWCVYOXRDMCX-UHFFFAOYSA-N 0.000 description 1
- 241001279686 Allium moly Species 0.000 description 1
- 241000473391 Archosargus rhomboidalis Species 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000004356 Hysteria Diseases 0.000 description 1
- 241000110847 Kochia Species 0.000 description 1
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 1
- 239000004472 Lysine Substances 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- YFKWGCZVHIZCMC-UHFFFAOYSA-N [Zr].[Bi].[Sr] Chemical compound [Zr].[Bi].[Sr] YFKWGCZVHIZCMC-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000034994 death Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000007803 itching Effects 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- COQAIRYMVBNUKQ-UHFFFAOYSA-J magnesium;barium(2+);tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Mg+2].[Ba+2] COQAIRYMVBNUKQ-UHFFFAOYSA-J 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 210000000352 storage cell Anatomy 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- WJMMDJOFTZAHHS-UHFFFAOYSA-L strontium;carbonic acid;carbonate Chemical compound [Sr+2].OC([O-])=O.OC([O-])=O WJMMDJOFTZAHHS-UHFFFAOYSA-L 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 150000003626 triacylglycerols Chemical class 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/68—Crystals with laminate structure, e.g. "superlattices"
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/005—Epitaxial layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/1013—Thin film varistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.基板(51)と、複数の電気的に相互接続された電気デバイス(71)、( 72)を形成する前記基板(51)上の複数の材料層(54)、(56)、(7 3)、(58)、(60)、(72)、(77)とを含み、前記材料層の少なく とも一つが層状超格子材料(60)を含むことを特徴とする集積回路デバイス( 36)。 2.前記デバイスが、第一電極(58)、(58′)、第二電極(77)、(7 7′)を含むキャパシタ(72)、(72′)と、前記キャパシタ(72)、( 72′)を、メモリー(36)へ入力される情報に依存して第一状態または第二 状態に置くための情報書込み手段(80)、(80′)と、そして前記キャパシ タ(72)、(72′)の状態を検出して前記状態に対応するシグナルを提供す るための情報読出し手段(82)、(82′)とを含むメモリー(36)であっ て、前記第一電極(58)、(58′)と前記第二電極(77)、(77′)と の間に層状超格子材料(60)、(60′)が配置されていることを特徴とする 、請求の範囲1に記載の集積回路デバイス(36)。 3.前記層状超格子材料(60′)が、50よりも高い誘電率を示す材料を含む ことを特徴とする、請求の範囲1または2に記載の集積回路メモリー(36)。 4.前記デバイスが、分極性材料(60)を含む強誘電性メモリーセル(70) と、前記強誘電性メモリーセル(70)を、メモリーへ入力される情報に依存し て第一メモリーセル状態または第二メモリーセル状態に置くための情報書込み手 段(80)と、前記メモリーセル状態を検出して前記メモリーセル状態に対応す る電気シグナルを提供するための情報読出し手段(82)とを含む不揮発性強誘 電体メモリー(36)であって、前記強誘電性材料(60)に対応する前記第一 メモリーセル状態は第一分極状態にあり、また前記強誘電性材料(60)に対応 する前記第二メモリーセル状態は第二分極状態にあり、前記不揮発性メモリ−は 、前記強誘電性材料が層状超格子材料(60)を含み、また前記メモリール(7 0)が前記第一及び第二メモリーセル状態を1日よりも長い期間保持てきること を特徴とする、請求の範囲1に記載の集積回路デバイス。 5.基板(2)、(22)、(51)を提供する工程及び前記基板の上に1層以 上の層(10)、(12)、(28)、(30)、(58)、(60)を形成さ せる工程を含み、前記層の少なくとも一つが、30%未満の疲労性で109回ス イッチング可能な層状超格子材料(12)、(30)、(60)を含むことを特 徴とする、第一状態から第二状態ヘスイッチング可能な電子デバイス(1)、( 20)、(36)の製造方法。 6.前記層状超格子材料(60)、(60′)、(12)、(30)が、以下の 化合物、ストロンチウムビスマスチタネート、ストロンチウムビスマスタンタレ ート、ストロンチウムビスマスニオベート、ストロンチウムビスマスタンタルニ オベート、鉛ビスマスニオベート、バリウムビスマスタンタレート、鉛ビスマス タンタレート及びバリウムビスマスニオベートのうちの1種を含むことを特徴と する、請求の範囲1、2もしくは4に記載の集積回路(36)または請求の範囲 5に記載の方法。 7.前記層状超格子材料(60)、(60′)、(12)、(30)、(60) が以下の式: ▲数式、化学式、表などがあります▼ (上式中、Al、A2…Ajはベロプスカイト様構造におけるA部位元素(84 )を表し、Sl、S2…Skは超格子発生元素(87)を表し、Bl、B2…B lはペロブスカイト榛構造におけるB部位元素(86)を表し、Qはアニオン( 88)を表し、上付文字は各元素(84)、(86)、(87)、(88)の原 子価数を表し、下付文字は、単位格子(89)における元素の平均の原子数を表 し、そして少なくともwl及びylは0ではない)で示される材料を含むことを 特徴とする、請求の範囲1、2もしくは4に記載の集積回路デバイス(70)、 (70′)または請求の範囲5に記載の方法。 8.前記A部位元素(84)が、ストロンチウム、カルシウム、バリウム、ビス マス、カドミウム及び鉛から成る群からの元素を1種以上含み、前記B部位元素 (86)が、チタン、タンタル、ハブニウム、タングステン、ニオブ及びジルコ ニウムから成る群からの元素を1種以上含み、前記超格子発生元素(87)が、 ビスマス、スカンジウム、イットリウム、ランタン、アンチモン、クロム及びタ リウムから成る群からの元素を1種以上含み、そして前記アニオン(88)が、 酸素、塩素、フッ素及びこれらの複合体から成る群からの元素を含むことを特徴 とする、集積回路デバイス(70)、(70′)または請求の範囲7に記載の方 法。 9.前記層状超格子材料(60)、(60′)、(12)、(30)が、前記式 で示される材料の2種以上からなる固溶体を含むことを特徴とする、集積回路デ バイス(70)、(70′)または請求の範囲7に記載の方法。 10.前記層状超格子材料(60)、(12)、(30)が、粒子または他の大 きなもしくは小さな単位の中に局在構造を有する材料を含み、この局在構造が、 相互依存様式で自発的に結合されている一つ以上の中間非強誘電体層(96)と 一つ以上の誘電体層(94)とを含有する反復可能な単位(89)を優勢に含有 することを特徴とする、請求の範囲1、2もしくは4に記載の集積回路デバイス (70′)または請求の範囲5に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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US80743991A | 1991-12-13 | 1991-12-13 | |
US807.439 | 1991-12-13 | ||
US96519092A | 1992-10-23 | 1992-10-23 | |
US965.190 | 1992-10-23 | ||
PCT/US1992/010627 WO1993012542A1 (en) | 1991-12-13 | 1992-12-08 | Layered superlattice material applications |
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JPH07502150A true JPH07502150A (ja) | 1995-03-02 |
JP3162718B2 JP3162718B2 (ja) | 2001-05-08 |
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JP51104893A Expired - Fee Related JP3162718B2 (ja) | 1991-12-13 | 1992-12-08 | 集積回路メモリー |
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EP (1) | EP0616726B1 (ja) |
JP (1) | JP3162718B2 (ja) |
KR (1) | KR100392213B1 (ja) |
AT (1) | ATE201938T1 (ja) |
AU (1) | AU3273893A (ja) |
DE (1) | DE69231865T2 (ja) |
WO (1) | WO1993012542A1 (ja) |
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JP2012521851A (ja) * | 2009-03-31 | 2012-09-20 | ボストン サイエンティフィック サイムド,インコーポレイテッド | 血管内超音波イメージングシステムのカテーテル内の遠位に配置されるモータを形成および使用するためのシステムおよび方法 |
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US5508226A (en) * | 1991-12-13 | 1996-04-16 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materialsand making electronic devices including same |
US6310373B1 (en) * | 1992-10-23 | 2001-10-30 | Symetrix Corporation | Metal insulator semiconductor structure with polarization-compatible buffer layer |
US5955754A (en) * | 1992-10-23 | 1999-09-21 | Symetrix Corporation | Integrated circuits having mixed layered superlattice materials and precursor solutions for use in a process of making the same |
US6664115B2 (en) | 1992-10-23 | 2003-12-16 | Symetrix Corporation | Metal insulator structure with polarization-compatible buffer layer |
DE69522628T2 (de) * | 1994-03-17 | 2002-04-18 | Matsushita Electric Industrial Co.,Ltd. | Dünnschichtkondensatoren über einem galliumarsenidsubstrat und herstellungsverfahren |
US5426075A (en) * | 1994-06-15 | 1995-06-20 | Ramtron International Corporation | Method of manufacturing ferroelectric bismuth layered oxides |
TW378323B (en) * | 1994-09-22 | 2000-01-01 | Matsushita Electric Ind Co Ltd | Ferroelectric memory device |
JP3476932B2 (ja) * | 1994-12-06 | 2003-12-10 | シャープ株式会社 | 強誘電体薄膜及び強誘電体薄膜被覆基板並びに強誘電体薄膜の製造方法 |
DE19519159C2 (de) * | 1995-05-24 | 1998-07-09 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
EP0757354B1 (en) * | 1995-08-02 | 2002-05-22 | Matsushita Electric Industrial Co., Ltd | Ferroelectric memory device |
US5804823A (en) * | 1995-10-10 | 1998-09-08 | Raytheon Company | Bismuth layered structure pyroelectric detectors |
US5888585A (en) * | 1996-02-08 | 1999-03-30 | Symetrix Corporation | Process for making an integrated circuit with high dielectric constant barium-strontium-niobium oxide |
JP3435966B2 (ja) | 1996-03-13 | 2003-08-11 | 株式会社日立製作所 | 強誘電体素子とその製造方法 |
TW322578B (ja) * | 1996-03-18 | 1997-12-11 | Matsushita Electron Co Ltd | |
KR100446120B1 (ko) * | 1996-03-25 | 2004-12-08 | 마츠시타 덴끼 산교 가부시키가이샤 | 강유전체메모리장치 |
US6313035B1 (en) | 1996-05-31 | 2001-11-06 | Micron Technology, Inc. | Chemical vapor deposition using organometallic precursors |
US5721009A (en) * | 1996-06-24 | 1998-02-24 | He Holdings, Inc. | Controlled carbon content MOD precursor materials using organic acid anhydride |
DE19637389C1 (de) * | 1996-09-13 | 1997-10-16 | Siemens Ag | Verfahren zur Herstellung einer DRAM-Zellenanordnung |
JP3024747B2 (ja) * | 1997-03-05 | 2000-03-21 | 日本電気株式会社 | 半導体メモリの製造方法 |
US6133092A (en) * | 1998-07-24 | 2000-10-17 | Symetrix Corporation | Low temperature process for fabricating layered superlattice materials and making electronic devices including same |
US6322849B2 (en) * | 1998-11-13 | 2001-11-27 | Symetrix Corporation | Recovery of electronic properties in hydrogen-damaged ferroelectrics by low-temperature annealing in an inert gas |
US6270568B1 (en) * | 1999-07-15 | 2001-08-07 | Motorola, Inc. | Method for fabricating a semiconductor structure with reduced leakage current density |
US6607980B2 (en) * | 2001-02-12 | 2003-08-19 | Symetrix Corporation | Rapid-temperature pulsing anneal method at low temperature for fabricating layered superlattice materials and making electronic devices including same |
US7075134B2 (en) | 2001-11-29 | 2006-07-11 | Symetrix Corporation | Ferroelectric and high dielectric constant integrated circuit capacitors with three-dimensional orientation for high-density memories, and method of making the same |
KR100469750B1 (ko) * | 2002-02-23 | 2005-02-02 | 학교법인 성균관대학 | 다층산화물 인공격자를 갖는 소자 |
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JPH068509B2 (ja) * | 1985-09-17 | 1994-02-02 | 勝 岡田 | 強誘電体薄膜の製造方法 |
EP0338157B1 (en) * | 1988-04-22 | 1994-07-06 | Ramtron International Corporation | Charged magnified dram cell |
DE69017802T2 (de) * | 1989-08-30 | 1995-09-07 | Nippon Electric Co | Dünnfilmkondensator und dessen Herstellungsverfahren. |
JP2948836B2 (ja) * | 1989-09-22 | 1999-09-13 | オリンパス光学工業株式会社 | 強誘電体素子 |
US5146299A (en) * | 1990-03-02 | 1992-09-08 | Westinghouse Electric Corp. | Ferroelectric thin film material, method of deposition, and devices using same |
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EP0489519A3 (en) * | 1990-12-04 | 1993-05-12 | Raytheon Company | Sol-gel processing of piezoelectric and ferroelectric films |
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JP2012521851A (ja) * | 2009-03-31 | 2012-09-20 | ボストン サイエンティフィック サイムド,インコーポレイテッド | 血管内超音波イメージングシステムのカテーテル内の遠位に配置されるモータを形成および使用するためのシステムおよび方法 |
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WO1993012542A1 (en) | 1993-06-24 |
EP0616726B1 (en) | 2001-06-06 |
DE69231865D1 (de) | 2001-07-12 |
EP0616726A1 (en) | 1994-09-28 |
AU3273893A (en) | 1993-07-19 |
ATE201938T1 (de) | 2001-06-15 |
JP3162718B2 (ja) | 2001-05-08 |
DE69231865T2 (de) | 2001-09-20 |
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