CN100364065C - 强电介质膜的制造方法 - Google Patents

强电介质膜的制造方法 Download PDF

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Publication number
CN100364065C
CN100364065C CNB2004100841060A CN200410084106A CN100364065C CN 100364065 C CN100364065 C CN 100364065C CN B2004100841060 A CNB2004100841060 A CN B2004100841060A CN 200410084106 A CN200410084106 A CN 200410084106A CN 100364065 C CN100364065 C CN 100364065C
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CN
China
Prior art keywords
ferroelectric
film
electrode
raw material
ferroelectric film
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Expired - Fee Related
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CNB2004100841060A
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English (en)
Chinese (zh)
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CN1607650A (zh
Inventor
木岛健
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Seiko Epson Corp
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Seiko Epson Corp
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Publication of CN1607650A publication Critical patent/CN1607650A/zh
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Publication of CN100364065C publication Critical patent/CN100364065C/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1236—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates
    • H01G4/1245—Ceramic dielectrics characterised by the ceramic dielectric material based on zirconium oxides or zirconates containing also titanates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors (thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/69398—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides the material having a perovskite structure, e.g. BaTiO3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
CNB2004100841060A 2003-10-15 2004-10-15 强电介质膜的制造方法 Expired - Fee Related CN100364065C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ
JP2003355046 2003-10-15

Publications (2)

Publication Number Publication Date
CN1607650A CN1607650A (zh) 2005-04-20
CN100364065C true CN100364065C (zh) 2008-01-23

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Family Applications (1)

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CNB2004100841060A Expired - Fee Related CN100364065C (zh) 2003-10-15 2004-10-15 强电介质膜的制造方法

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US (1) US7056750B2 (enExample)
JP (1) JP4632018B2 (enExample)
CN (1) CN100364065C (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3937174B2 (ja) 2004-03-22 2007-06-27 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
JP4983633B2 (ja) * 2008-02-07 2012-07-25 セイコーエプソン株式会社 誘電体膜の成膜方法および誘電体デバイスの製造方法
KR101928438B1 (ko) * 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
CN106683882B (zh) * 2017-01-19 2018-07-06 广州天极电子科技有限公司 一种制备薄膜电容器的方法
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof
US10497774B2 (en) 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000150295A (ja) * 1998-11-17 2000-05-30 Hokuriku Electric Ind Co Ltd コンデンサ及びその製造方法
CN1285007A (zh) * 1997-12-23 2001-02-21 西门子公司 选择性沉积铋基铁电薄膜的方法
CN1354385A (zh) * 2000-10-04 2002-06-19 精工爱普生株式会社 电泳装置及其制造方法
JP2003218102A (ja) * 2002-01-23 2003-07-31 Komatsu Ltd 誘電体膜の処理装置及び誘電体膜の処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818916A (ja) * 1981-07-27 1983-02-03 ソニー株式会社 焦電体の製造方法
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JP3206454B2 (ja) * 1996-10-21 2001-09-10 東海ゴム工業株式会社 複合酸化物薄膜及びその製造方法
JP2000328223A (ja) * 1999-05-25 2000-11-28 Agency Of Ind Science & Technol 積層構造体及びその原料粉、及び、圧電アクチュエータ
JP4200639B2 (ja) * 2000-06-13 2008-12-24 宇部興産株式会社 Ｐｚｔ系結晶膜素子の実装方法
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1285007A (zh) * 1997-12-23 2001-02-21 西门子公司 选择性沉积铋基铁电薄膜的方法
JP2000150295A (ja) * 1998-11-17 2000-05-30 Hokuriku Electric Ind Co Ltd コンデンサ及びその製造方法
CN1354385A (zh) * 2000-10-04 2002-06-19 精工爱普生株式会社 电泳装置及其制造方法
JP2003218102A (ja) * 2002-01-23 2003-07-31 Komatsu Ltd 誘電体膜の処理装置及び誘電体膜の処理方法

Also Published As

Publication number Publication date
JP2005123310A (ja) 2005-05-12
CN1607650A (zh) 2005-04-20
JP4632018B2 (ja) 2011-02-16
US7056750B2 (en) 2006-06-06
US20050117439A1 (en) 2005-06-02

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