JP2005123310A5 - - Google Patents

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Publication number
JP2005123310A5
JP2005123310A5 JP2003355046A JP2003355046A JP2005123310A5 JP 2005123310 A5 JP2005123310 A5 JP 2005123310A5 JP 2003355046 A JP2003355046 A JP 2003355046A JP 2003355046 A JP2003355046 A JP 2003355046A JP 2005123310 A5 JP2005123310 A5 JP 2005123310A5
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JP
Japan
Prior art keywords
ferroelectric
film
particles
core layer
ferroelectric material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003355046A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005123310A (ja
JP4632018B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003355046A priority Critical patent/JP4632018B2/ja
Priority claimed from JP2003355046A external-priority patent/JP4632018B2/ja
Priority to US10/960,001 priority patent/US7056750B2/en
Priority to CNB2004100841060A priority patent/CN100364065C/zh
Publication of JP2005123310A publication Critical patent/JP2005123310A/ja
Publication of JP2005123310A5 publication Critical patent/JP2005123310A5/ja
Application granted granted Critical
Publication of JP4632018B2 publication Critical patent/JP4632018B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003355046A 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ Expired - Fee Related JP4632018B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ
US10/960,001 US7056750B2 (en) 2003-10-15 2004-10-08 Ferroelectric film, method of manufacturing ferroelectric film, ferroelectric capacitor, and ferroelectric memory
CNB2004100841060A CN100364065C (zh) 2003-10-15 2004-10-15 强电介质膜的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003355046A JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

Publications (3)

Publication Number Publication Date
JP2005123310A JP2005123310A (ja) 2005-05-12
JP2005123310A5 true JP2005123310A5 (enExample) 2006-11-24
JP4632018B2 JP4632018B2 (ja) 2011-02-16

Family

ID=34612779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003355046A Expired - Fee Related JP4632018B2 (ja) 2003-10-15 2003-10-15 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ

Country Status (3)

Country Link
US (1) US7056750B2 (enExample)
JP (1) JP4632018B2 (enExample)
CN (1) CN100364065C (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3937174B2 (ja) 2004-03-22 2007-06-27 セイコーエプソン株式会社 強誘電体膜、強誘電体膜の製造方法、強誘電体キャパシタ、強誘電体メモリおよび圧電素子
JP4983633B2 (ja) * 2008-02-07 2012-07-25 セイコーエプソン株式会社 誘電体膜の成膜方法および誘電体デバイスの製造方法
KR101928438B1 (ko) 2012-08-08 2019-02-26 삼성전자주식회사 대전 입자의 진동을 이용한 전자기파 발생기 및 비트 생성기
CN106683882B (zh) * 2017-01-19 2018-07-06 广州天极电子科技有限公司 一种制备薄膜电容器的方法
US10332687B2 (en) 2017-10-23 2019-06-25 Blackberry Limited Tunable coplanar capacitor with vertical tuning and lateral RF path and methods for manufacturing thereof
US10497774B2 (en) 2017-10-23 2019-12-03 Blackberry Limited Small-gap coplanar tunable capacitors and methods for manufacturing thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818916A (ja) * 1981-07-27 1983-02-03 ソニー株式会社 焦電体の製造方法
JP3254750B2 (ja) * 1992-09-28 2002-02-12 セイコーエプソン株式会社 強誘電体薄膜素子、インクジェット記録装置および強誘電体薄膜素子の製造方法
JP3206454B2 (ja) * 1996-10-21 2001-09-10 東海ゴム工業株式会社 複合酸化物薄膜及びその製造方法
US6120846A (en) * 1997-12-23 2000-09-19 Advanced Technology Materials, Inc. Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
JP2000150295A (ja) * 1998-11-17 2000-05-30 Hokuriku Electric Ind Co Ltd コンデンサ及びその製造方法
JP2000328223A (ja) * 1999-05-25 2000-11-28 Agency Of Ind Science & Technol 積層構造体及びその原料粉、及び、圧電アクチュエータ
JP4200639B2 (ja) * 2000-06-13 2008-12-24 宇部興産株式会社 Ｐｚｔ系結晶膜素子の実装方法
TW538265B (en) * 2000-10-04 2003-06-21 Seiko Epson Corp Electrophoretic device and method of manufacturing it
EP1213745A1 (en) * 2000-12-05 2002-06-12 Sony International (Europe) GmbH Method of producing a ferroelectric memory and memory device
KR20030025671A (ko) * 2001-09-22 2003-03-29 주식회사 하이닉스반도체 커패시터의 제조방법
JP2003218102A (ja) * 2002-01-23 2003-07-31 Komatsu Ltd 誘電体膜の処理装置及び誘電体膜の処理方法

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