JP2009135455A5 - - Google Patents
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- Publication number
- JP2009135455A5 JP2009135455A5 JP2008273420A JP2008273420A JP2009135455A5 JP 2009135455 A5 JP2009135455 A5 JP 2009135455A5 JP 2008273420 A JP2008273420 A JP 2008273420A JP 2008273420 A JP2008273420 A JP 2008273420A JP 2009135455 A5 JP2009135455 A5 JP 2009135455A5
- Authority
- JP
- Japan
- Prior art keywords
- crystalline semiconductor
- layer
- porous layer
- insulating substrate
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 23
- 239000000758 substrate Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- -1 hydrogen ions Chemical class 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000002048 anodisation reaction Methods 0.000 claims 1
- 238000007743 anodising Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008273420A JP2009135455A (ja) | 2007-10-29 | 2008-10-23 | 単結晶半導体層の形成方法、結晶性半導体層の形成方法、多結晶半導体層の形成方法、及び、半導体装置の作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007280115 | 2007-10-29 | ||
| JP2008273420A JP2009135455A (ja) | 2007-10-29 | 2008-10-23 | 単結晶半導体層の形成方法、結晶性半導体層の形成方法、多結晶半導体層の形成方法、及び、半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014122434A Division JP2014209644A (ja) | 2007-10-29 | 2014-06-13 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009135455A JP2009135455A (ja) | 2009-06-18 |
| JP2009135455A5 true JP2009135455A5 (enExample) | 2011-10-13 |
Family
ID=40583368
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008273420A Withdrawn JP2009135455A (ja) | 2007-10-29 | 2008-10-23 | 単結晶半導体層の形成方法、結晶性半導体層の形成方法、多結晶半導体層の形成方法、及び、半導体装置の作製方法 |
| JP2014122434A Withdrawn JP2014209644A (ja) | 2007-10-29 | 2014-06-13 | 半導体装置の作製方法 |
| JP2015177126A Withdrawn JP2016026388A (ja) | 2007-10-29 | 2015-09-09 | 結晶性半導体層の作製方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014122434A Withdrawn JP2014209644A (ja) | 2007-10-29 | 2014-06-13 | 半導体装置の作製方法 |
| JP2015177126A Withdrawn JP2016026388A (ja) | 2007-10-29 | 2015-09-09 | 結晶性半導体層の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7888242B2 (enExample) |
| JP (3) | JP2009135455A (enExample) |
| KR (1) | KR101576447B1 (enExample) |
| SG (1) | SG170089A1 (enExample) |
| WO (1) | WO2009057667A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7416525B2 (en) * | 2003-09-18 | 2008-08-26 | Myrakelle, Llc | Rotary blood pump |
| CN103170020A (zh) * | 2006-03-31 | 2013-06-26 | 索罗泰克公司 | 血泵和泵送血液的方法 |
| WO2009157408A1 (ja) | 2008-06-23 | 2009-12-30 | テルモ株式会社 | 血液ポンプ装置 |
| US9067005B2 (en) | 2008-12-08 | 2015-06-30 | Thoratec Corporation | Centrifugal pump apparatus |
| JP5378010B2 (ja) | 2009-03-05 | 2013-12-25 | ソラテック コーポレーション | 遠心式ポンプ装置 |
| US8770945B2 (en) | 2009-03-06 | 2014-07-08 | Thoratec Corporation | Centrifugal pump apparatus |
| EP3490122B1 (en) | 2009-07-29 | 2021-01-27 | Thoratec Corporation | Rotation drive device and centrifugal pump device |
| JP5443197B2 (ja) | 2010-02-16 | 2014-03-19 | ソラテック コーポレーション | 遠心式ポンプ装置 |
| JP5572832B2 (ja) | 2010-03-26 | 2014-08-20 | ソーラテック コーポレイション | 遠心式血液ポンプ装置 |
| JP5681403B2 (ja) | 2010-07-12 | 2015-03-11 | ソーラテック コーポレイション | 遠心式ポンプ装置 |
| JP5577506B2 (ja) | 2010-09-14 | 2014-08-27 | ソーラテック コーポレイション | 遠心式ポンプ装置 |
| EP2693609B1 (en) | 2011-03-28 | 2017-05-03 | Thoratec Corporation | Rotation and drive device and centrifugal pump device using same |
| JP5778960B2 (ja) * | 2011-03-29 | 2015-09-16 | 株式会社Joled | 表示パネル、表示装置および電子機器 |
| JP6083929B2 (ja) | 2012-01-18 | 2017-02-22 | ソーラテック コーポレイション | 遠心式ポンプ装置 |
| US9371826B2 (en) | 2013-01-24 | 2016-06-21 | Thoratec Corporation | Impeller position compensation using field oriented control |
| CN103165529B (zh) * | 2013-02-20 | 2015-04-29 | 京东方科技集团股份有限公司 | 一种阵列基板的制备方法 |
| US9556873B2 (en) | 2013-02-27 | 2017-01-31 | Tc1 Llc | Startup sequence for centrifugal pump with levitated impeller |
| US9713663B2 (en) | 2013-04-30 | 2017-07-25 | Tc1 Llc | Cardiac pump with speed adapted for ventricle unloading |
| US10052420B2 (en) | 2013-04-30 | 2018-08-21 | Tc1 Llc | Heart beat identification and pump speed synchronization |
| KR101983157B1 (ko) * | 2013-11-19 | 2019-05-28 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US9623161B2 (en) | 2014-08-26 | 2017-04-18 | Tc1 Llc | Blood pump and method of suction detection |
| EP4643926A2 (en) | 2015-02-11 | 2025-11-05 | Tc1 Llc | Heart beat identification and pump speed synchronization |
| EP3256185B1 (en) | 2015-02-12 | 2019-10-30 | Tc1 Llc | System and method for controlling the position of a levitated rotor |
| US10371152B2 (en) | 2015-02-12 | 2019-08-06 | Tc1 Llc | Alternating pump gaps |
| EP3256184B1 (en) | 2015-02-13 | 2020-04-08 | Tc1 Llc | Impeller suspension mechanism for heart pump |
| CN105097552A (zh) * | 2015-08-14 | 2015-11-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置 |
| US10117983B2 (en) | 2015-11-16 | 2018-11-06 | Tc1 Llc | Pressure/flow characteristic modification of a centrifugal pump in a ventricular assist device |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05310495A (ja) * | 1992-04-28 | 1993-11-22 | Nkk Corp | シリコン単結晶の製造方法および製造装置 |
| JPH07165488A (ja) * | 1993-12-10 | 1995-06-27 | Fujitsu Ltd | 結晶成長装置及び結晶成長方法 |
| JP3342625B2 (ja) * | 1995-12-27 | 2002-11-11 | 三菱マテリアルシリコン株式会社 | 単結晶引上装置 |
| JPH09255487A (ja) | 1996-03-18 | 1997-09-30 | Sony Corp | 薄膜半導体の製造方法 |
| JP3814886B2 (ja) * | 1996-09-05 | 2006-08-30 | ソニー株式会社 | インゴットの外周表面の陽極化成方法と、これを用いた薄膜半導体および薄膜太陽電池の製造方法と、陽極化成装置 |
| JP3962465B2 (ja) * | 1996-12-18 | 2007-08-22 | キヤノン株式会社 | 半導体部材の製造方法 |
| KR100304161B1 (ko) * | 1996-12-18 | 2001-11-30 | 미다라이 후지오 | 반도체부재의제조방법 |
| JP3754818B2 (ja) * | 1997-03-27 | 2006-03-15 | キヤノン株式会社 | 半導体基板の作製方法 |
| JPH11163363A (ja) | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4476390B2 (ja) * | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2000349265A (ja) * | 1999-03-26 | 2000-12-15 | Canon Inc | 半導体部材の作製方法 |
| FR2807074B1 (fr) * | 2000-04-03 | 2002-12-06 | Soitec Silicon On Insulator | Procede et dispositif de fabrication de substrats |
| JP2007180196A (ja) * | 2005-12-27 | 2007-07-12 | Mitsumi Electric Co Ltd | 半導体装置及びその製造方法 |
-
2008
- 2008-10-23 JP JP2008273420A patent/JP2009135455A/ja not_active Withdrawn
- 2008-10-23 WO PCT/JP2008/069705 patent/WO2009057667A1/en not_active Ceased
- 2008-10-23 SG SG201101716-7A patent/SG170089A1/en unknown
- 2008-10-23 KR KR1020107011638A patent/KR101576447B1/ko not_active Expired - Fee Related
- 2008-10-24 US US12/257,448 patent/US7888242B2/en not_active Expired - Fee Related
-
2014
- 2014-06-13 JP JP2014122434A patent/JP2014209644A/ja not_active Withdrawn
-
2015
- 2015-09-09 JP JP2015177126A patent/JP2016026388A/ja not_active Withdrawn
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