SG170089A1 - Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device - Google Patents

Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device

Info

Publication number
SG170089A1
SG170089A1 SG201101716-7A SG2011017167A SG170089A1 SG 170089 A1 SG170089 A1 SG 170089A1 SG 2011017167 A SG2011017167 A SG 2011017167A SG 170089 A1 SG170089 A1 SG 170089A1
Authority
SG
Singapore
Prior art keywords
formation method
semiconductor layer
layer
single crystal
crystalline semiconductor
Prior art date
Application number
SG201101716-7A
Other languages
English (en)
Inventor
Koichiro Tanaka
Satoru Okamoto
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG170089A1 publication Critical patent/SG170089A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG201101716-7A 2007-10-29 2008-10-23 Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device SG170089A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007280115 2007-10-29

Publications (1)

Publication Number Publication Date
SG170089A1 true SG170089A1 (en) 2011-04-29

Family

ID=40583368

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201101716-7A SG170089A1 (en) 2007-10-29 2008-10-23 Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device

Country Status (5)

Country Link
US (1) US7888242B2 (enExample)
JP (3) JP2009135455A (enExample)
KR (1) KR101576447B1 (enExample)
SG (1) SG170089A1 (enExample)
WO (1) WO2009057667A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005028872A2 (en) * 2003-09-18 2005-03-31 Myrakelle, Llc Rotary blood pump
JP2009532131A (ja) 2006-03-31 2009-09-10 オーキス メディカル コーポレイション 回転血液ポンプ
JP5171953B2 (ja) 2008-06-23 2013-03-27 テルモ株式会社 血液ポンプ装置
US9067005B2 (en) 2008-12-08 2015-06-30 Thoratec Corporation Centrifugal pump apparatus
JP5378010B2 (ja) 2009-03-05 2013-12-25 ソラテック コーポレーション 遠心式ポンプ装置
US8770945B2 (en) 2009-03-06 2014-07-08 Thoratec Corporation Centrifugal pump apparatus
EP3490122B1 (en) 2009-07-29 2021-01-27 Thoratec Corporation Rotation drive device and centrifugal pump device
JP5443197B2 (ja) 2010-02-16 2014-03-19 ソラテック コーポレーション 遠心式ポンプ装置
WO2011118325A1 (ja) 2010-03-26 2011-09-29 テルモ株式会社 遠心式血液ポンプ装置
JP5681403B2 (ja) 2010-07-12 2015-03-11 ソーラテック コーポレイション 遠心式ポンプ装置
JP5577506B2 (ja) 2010-09-14 2014-08-27 ソーラテック コーポレイション 遠心式ポンプ装置
EP2693609B1 (en) 2011-03-28 2017-05-03 Thoratec Corporation Rotation and drive device and centrifugal pump device using same
JP5778960B2 (ja) * 2011-03-29 2015-09-16 株式会社Ｊｏｌｅｄ 表示パネル、表示装置および電子機器
JP6083929B2 (ja) 2012-01-18 2017-02-22 ソーラテック コーポレイション 遠心式ポンプ装置
US9371826B2 (en) 2013-01-24 2016-06-21 Thoratec Corporation Impeller position compensation using field oriented control
CN103165529B (zh) * 2013-02-20 2015-04-29 京东方科技集团股份有限公司 一种阵列基板的制备方法
US9556873B2 (en) 2013-02-27 2017-01-31 Tc1 Llc Startup sequence for centrifugal pump with levitated impeller
US10052420B2 (en) 2013-04-30 2018-08-21 Tc1 Llc Heart beat identification and pump speed synchronization
US9713663B2 (en) 2013-04-30 2017-07-25 Tc1 Llc Cardiac pump with speed adapted for ventricle unloading
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US9623161B2 (en) 2014-08-26 2017-04-18 Tc1 Llc Blood pump and method of suction detection
EP4643926A3 (en) 2015-02-11 2025-12-24 Tc1 Llc Heart beat identification and pump speed synchronization
US10166318B2 (en) 2015-02-12 2019-01-01 Tc1 Llc System and method for controlling the position of a levitated rotor
US10371152B2 (en) 2015-02-12 2019-08-06 Tc1 Llc Alternating pump gaps
WO2016130989A1 (en) 2015-02-13 2016-08-18 Thoratec Corporation Impeller suspension mechanism for heart pump
CN105097552A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置
US10117983B2 (en) 2015-11-16 2018-11-06 Tc1 Llc Pressure/flow characteristic modification of a centrifugal pump in a ventricular assist device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05310495A (ja) * 1992-04-28 1993-11-22 Nkk Corp シリコン単結晶の製造方法および製造装置
JPH07165488A (ja) * 1993-12-10 1995-06-27 Fujitsu Ltd 結晶成長装置及び結晶成長方法
JP3342625B2 (ja) * 1995-12-27 2002-11-11 三菱マテリアルシリコン株式会社 単結晶引上装置
JPH09255487A (ja) 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
JP3814886B2 (ja) * 1996-09-05 2006-08-30 ソニー株式会社 インゴットの外周表面の陽極化成方法と、これを用いた薄膜半導体および薄膜太陽電池の製造方法と、陽極化成装置
SG67458A1 (en) * 1996-12-18 1999-09-21 Canon Kk Process for producing semiconductor article
JP3962465B2 (ja) * 1996-12-18 2007-08-22 キヤノン株式会社 半導体部材の製造方法
JP3754818B2 (ja) * 1997-03-27 2006-03-15 キヤノン株式会社 半導体基板の作製方法
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000349265A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の作製方法
FR2807074B1 (fr) * 2000-04-03 2002-12-06 Soitec Silicon On Insulator Procede et dispositif de fabrication de substrats
JP2007180196A (ja) * 2005-12-27 2007-07-12 Mitsumi Electric Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2016026388A (ja) 2016-02-12
WO2009057667A1 (en) 2009-05-07
JP2014209644A (ja) 2014-11-06
US7888242B2 (en) 2011-02-15
US20090111247A1 (en) 2009-04-30
KR20100091993A (ko) 2010-08-19
JP2009135455A (ja) 2009-06-18
KR101576447B1 (ko) 2015-12-10

Similar Documents

Publication Publication Date Title
SG170089A1 (en) Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
JP2009135455A5 (enExample)
TW200943495A (en) Semiconductor substrate and method for manufacturing the same, and method for manufacturing semiconductor device
JP2009135473A5 (enExample)
WO2009047894A1 (ja) Iii族窒化物結晶基板の製造方法、iii族窒化物結晶基板、iii族窒化物結晶基板を用いた半導体装置
WO2011071937A3 (en) Method of cleaning and forming a negatively charged passivation layer over a doped region
MY145709A (en) Method of manufacturing crystalline silicon solar cells with improved surface passivation
TW200601407A (en) Method for manufacturing semiconductor substrate and semiconductor substrate
WO2011133965A3 (en) Passivation methods and apparatus for achieving ultra-low surface recombination velocities for high-efficiency solar cells
WO2010124059A3 (en) Crystalline thin-film photovoltaic structures and methods for forming the same
WO2010090903A3 (en) Method for forming trench isolation using a gas cluster ion beam growth process
MY162405A (en) Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
WO2009151979A3 (en) High-efficiency solar cell structures and methods
SG139678A1 (en) Method for producing bonded wafer
WO2012003341A3 (en) Methods for forming tungsten-containing layers
WO2008121479A3 (en) Method and structure for making a top-side contact to a substrate
WO2011074909A3 (ko) 태양전지의 선택적 에미터 형성방법
SG159436A1 (en) Method for fabricating a semiconductor on insulator substrate with reduced secco defect density
TW201130046A (en) Semiconductor device and process for production of semiconductor device
WO2009108781A3 (en) Method of forming an embedded silicon carbon epitaxial layer
TW200943416A (en) Semiconductor structure and method of manufacture
WO2010134691A3 (ko) 다결정 실리콘 박막의 제조방법
WO2010093567A3 (en) Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer
WO2009028843A3 (en) Method of fabricating solar cell using microwave and apparatus for the same
WO2010093622A3 (en) Substrate for semiconductor device and method for its manufacture