SG170089A1 - Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device - Google Patents

Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device

Info

Publication number
SG170089A1
SG170089A1 SG201101716-7A SG2011017167A SG170089A1 SG 170089 A1 SG170089 A1 SG 170089A1 SG 2011017167 A SG2011017167 A SG 2011017167A SG 170089 A1 SG170089 A1 SG 170089A1
Authority
SG
Singapore
Prior art keywords
formation method
semiconductor layer
layer
single crystal
crystalline semiconductor
Prior art date
Application number
SG201101716-7A
Other languages
English (en)
Inventor
Koichiro Tanaka
Satoru Okamoto
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG170089A1 publication Critical patent/SG170089A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Electroluminescent Light Sources (AREA)
SG201101716-7A 2007-10-29 2008-10-23 Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device SG170089A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007280115 2007-10-29

Publications (1)

Publication Number Publication Date
SG170089A1 true SG170089A1 (en) 2011-04-29

Family

ID=40583368

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201101716-7A SG170089A1 (en) 2007-10-29 2008-10-23 Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device

Country Status (5)

Country Link
US (1) US7888242B2 (enExample)
JP (3) JP2009135455A (enExample)
KR (1) KR101576447B1 (enExample)
SG (1) SG170089A1 (enExample)
WO (1) WO2009057667A1 (enExample)

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CN101932837A (zh) 2006-03-31 2010-12-29 索罗泰克公司 旋转式血泵
JP5171953B2 (ja) 2008-06-23 2013-03-27 テルモ株式会社 血液ポンプ装置
EP2372160B1 (en) 2008-12-08 2014-07-30 Thoratec Corporation Centrifugal pump device
JP5378010B2 (ja) 2009-03-05 2013-12-25 ソラテック コーポレーション 遠心式ポンプ装置
EP2405140B1 (en) 2009-03-06 2016-10-19 Thoratec Corporation Centrifugal pump device
EP2461465B1 (en) 2009-07-29 2018-12-19 Thoratec Corporation Rotation drive device and centrifugal pump device
JP5443197B2 (ja) 2010-02-16 2014-03-19 ソラテック コーポレーション 遠心式ポンプ装置
JP5572832B2 (ja) 2010-03-26 2014-08-20 ソーラテック コーポレイション 遠心式血液ポンプ装置
JP5681403B2 (ja) 2010-07-12 2015-03-11 ソーラテック コーポレイション 遠心式ポンプ装置
JP5577506B2 (ja) 2010-09-14 2014-08-27 ソーラテック コーポレイション 遠心式ポンプ装置
WO2012132850A1 (ja) 2011-03-28 2012-10-04 Ntn株式会社 回転駆動装置およびそれを用いた遠心式ポンプ装置
JP5778960B2 (ja) * 2011-03-29 2015-09-16 株式会社Ｊｏｌｅｄ 表示パネル、表示装置および電子機器
JP6083929B2 (ja) 2012-01-18 2017-02-22 ソーラテック コーポレイション 遠心式ポンプ装置
US9371826B2 (en) 2013-01-24 2016-06-21 Thoratec Corporation Impeller position compensation using field oriented control
CN103165529B (zh) * 2013-02-20 2015-04-29 京东方科技集团股份有限公司 一种阵列基板的制备方法
US9556873B2 (en) 2013-02-27 2017-01-31 Tc1 Llc Startup sequence for centrifugal pump with levitated impeller
US9713663B2 (en) 2013-04-30 2017-07-25 Tc1 Llc Cardiac pump with speed adapted for ventricle unloading
US10052420B2 (en) 2013-04-30 2018-08-21 Tc1 Llc Heart beat identification and pump speed synchronization
KR101983157B1 (ko) * 2013-11-19 2019-05-28 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US9623161B2 (en) 2014-08-26 2017-04-18 Tc1 Llc Blood pump and method of suction detection
WO2016130846A1 (en) 2015-02-11 2016-08-18 Thoratec Corporation Heart beat identification and pump speed synchronization
EP3256185B1 (en) 2015-02-12 2019-10-30 Tc1 Llc System and method for controlling the position of a levitated rotor
US10371152B2 (en) 2015-02-12 2019-08-06 Tc1 Llc Alternating pump gaps
WO2016130989A1 (en) 2015-02-13 2016-08-18 Thoratec Corporation Impeller suspension mechanism for heart pump
CN105097552A (zh) * 2015-08-14 2015-11-25 京东方科技集团股份有限公司 薄膜晶体管及阵列基板的制备方法、阵列基板及显示装置
US10117983B2 (en) 2015-11-16 2018-11-06 Tc1 Llc Pressure/flow characteristic modification of a centrifugal pump in a ventricular assist device

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JPH05310495A (ja) * 1992-04-28 1993-11-22 Nkk Corp シリコン単結晶の製造方法および製造装置
JPH07165488A (ja) * 1993-12-10 1995-06-27 Fujitsu Ltd 結晶成長装置及び結晶成長方法
JP3342625B2 (ja) * 1995-12-27 2002-11-11 三菱マテリアルシリコン株式会社 単結晶引上装置
JPH09255487A (ja) 1996-03-18 1997-09-30 Sony Corp 薄膜半導体の製造方法
JP3814886B2 (ja) * 1996-09-05 2006-08-30 ソニー株式会社 インゴットの外周表面の陽極化成方法と、これを用いた薄膜半導体および薄膜太陽電池の製造方法と、陽極化成装置
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JP2000349265A (ja) * 1999-03-26 2000-12-15 Canon Inc 半導体部材の作製方法
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Also Published As

Publication number Publication date
KR20100091993A (ko) 2010-08-19
US7888242B2 (en) 2011-02-15
JP2009135455A (ja) 2009-06-18
JP2016026388A (ja) 2016-02-12
US20090111247A1 (en) 2009-04-30
KR101576447B1 (ko) 2015-12-10
JP2014209644A (ja) 2014-11-06
WO2009057667A1 (en) 2009-05-07

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