JP2002198496A5 - - Google Patents
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- Publication number
- JP2002198496A5 JP2002198496A5 JP2000394958A JP2000394958A JP2002198496A5 JP 2002198496 A5 JP2002198496 A5 JP 2002198496A5 JP 2000394958 A JP2000394958 A JP 2000394958A JP 2000394958 A JP2000394958 A JP 2000394958A JP 2002198496 A5 JP2002198496 A5 JP 2002198496A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ferroelectric
- film
- functional thin
- ferroelectric capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010409 thin film Substances 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 13
- 239000000126 substance Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010304 firing Methods 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000394958A JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000394958A JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006341826A Division JP2007096346A (ja) | 2006-12-19 | 2006-12-19 | 強誘電体キャパシタおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002198496A JP2002198496A (ja) | 2002-07-12 |
| JP2002198496A5 true JP2002198496A5 (enExample) | 2006-10-19 |
Family
ID=18860505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000394958A Withdrawn JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198496A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7031138B2 (en) * | 2002-12-09 | 2006-04-18 | Infineon Technologies Ag | Ferroelectric capacitor and process for its manufacture |
| JP2005327919A (ja) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | デバイスの製造方法及びデバイス、電気光学素子、プリンタ |
| JP5008323B2 (ja) * | 2005-03-28 | 2012-08-22 | 株式会社半導体エネルギー研究所 | メモリ装置 |
| US8030643B2 (en) | 2005-03-28 | 2011-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| KR100751882B1 (ko) | 2006-01-06 | 2007-08-23 | 박철민 | 고분자강유전체램의 하부전극 표면 개질 방법 및 그 방법에의해 제조된 고분자강유전체램 |
| KR101001911B1 (ko) | 2006-01-26 | 2010-12-17 | 후지쯔 세미컨덕터 가부시키가이샤 | 강유전체 메모리 장치의 제조 방법, 반도체 장치의 제조 방법 |
| WO2013018842A1 (ja) * | 2011-08-02 | 2013-02-07 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| KR102433290B1 (ko) * | 2018-02-08 | 2022-08-17 | 에스케이하이닉스 주식회사 | 강유전성 소자의 제조 방법 |
-
2000
- 2000-12-26 JP JP2000394958A patent/JP2002198496A/ja not_active Withdrawn
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