JP2002198496A - 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 - Google Patents
強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置Info
- Publication number
- JP2002198496A JP2002198496A JP2000394958A JP2000394958A JP2002198496A JP 2002198496 A JP2002198496 A JP 2002198496A JP 2000394958 A JP2000394958 A JP 2000394958A JP 2000394958 A JP2000394958 A JP 2000394958A JP 2002198496 A JP2002198496 A JP 2002198496A
- Authority
- JP
- Japan
- Prior art keywords
- ferroelectric
- thin film
- film
- functional thin
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 117
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 52
- 239000010408 film Substances 0.000 claims abstract description 261
- 239000010409 thin film Substances 0.000 claims abstract description 96
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000000126 substance Substances 0.000 claims abstract description 39
- 230000006870 function Effects 0.000 claims abstract description 14
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 238000001338 self-assembly Methods 0.000 claims abstract description 10
- 238000001179 sorption measurement Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000059 patterning Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010304 firing Methods 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims 12
- 239000011147 inorganic material Substances 0.000 claims 5
- 229910010272 inorganic material Inorganic materials 0.000 claims 5
- 230000008021 deposition Effects 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 98
- 239000007789 gas Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910052726 zirconium Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 150000003464 sulfur compounds Chemical class 0.000 description 2
- 108700042918 BF02 Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000394958A JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000394958A JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006341826A Division JP2007096346A (ja) | 2006-12-19 | 2006-12-19 | 強誘電体キャパシタおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002198496A true JP2002198496A (ja) | 2002-07-12 |
| JP2002198496A5 JP2002198496A5 (enExample) | 2006-10-19 |
Family
ID=18860505
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000394958A Withdrawn JP2002198496A (ja) | 2000-12-26 | 2000-12-26 | 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002198496A (enExample) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005327919A (ja) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | デバイスの製造方法及びデバイス、電気光学素子、プリンタ |
| US7031138B2 (en) * | 2002-12-09 | 2006-04-18 | Infineon Technologies Ag | Ferroelectric capacitor and process for its manufacture |
| JP2006310799A (ja) * | 2005-03-28 | 2006-11-09 | Semiconductor Energy Lab Co Ltd | メモリ装置およびその作製方法 |
| WO2007086126A1 (ja) * | 2006-01-26 | 2007-08-02 | Fujitsu Limited | 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法 |
| KR100751882B1 (ko) | 2006-01-06 | 2007-08-23 | 박철민 | 고분자강유전체램의 하부전극 표면 개질 방법 및 그 방법에의해 제조된 고분자강유전체램 |
| US8238152B2 (en) | 2005-03-28 | 2012-08-07 | Semiconductor Energy Laboratory Co. Ltd. | Memory device and manufacturing method the same |
| WO2013018842A1 (ja) * | 2011-08-02 | 2013-02-07 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| CN110137180A (zh) * | 2018-02-08 | 2019-08-16 | 爱思开海力士有限公司 | 铁电器件及其制造方法 |
-
2000
- 2000-12-26 JP JP2000394958A patent/JP2002198496A/ja not_active Withdrawn
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7031138B2 (en) * | 2002-12-09 | 2006-04-18 | Infineon Technologies Ag | Ferroelectric capacitor and process for its manufacture |
| JP2005327919A (ja) * | 2004-05-14 | 2005-11-24 | Seiko Epson Corp | デバイスの製造方法及びデバイス、電気光学素子、プリンタ |
| US8526216B2 (en) | 2005-03-28 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| JP2006310799A (ja) * | 2005-03-28 | 2006-11-09 | Semiconductor Energy Lab Co Ltd | メモリ装置およびその作製方法 |
| US9786669B2 (en) | 2005-03-28 | 2017-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| US9129866B2 (en) | 2005-03-28 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| US8238152B2 (en) | 2005-03-28 | 2012-08-07 | Semiconductor Energy Laboratory Co. Ltd. | Memory device and manufacturing method the same |
| US8804404B2 (en) | 2005-03-28 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and manufacturing method the same |
| KR100751882B1 (ko) | 2006-01-06 | 2007-08-23 | 박철민 | 고분자강유전체램의 하부전극 표면 개질 방법 및 그 방법에의해 제조된 고분자강유전체램 |
| WO2007086126A1 (ja) * | 2006-01-26 | 2007-08-02 | Fujitsu Limited | 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法 |
| JP4973502B2 (ja) * | 2006-01-26 | 2012-07-11 | 富士通セミコンダクター株式会社 | 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法 |
| US7893472B2 (en) | 2006-01-26 | 2011-02-22 | Fujitsu Semiconductor Limited | Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method |
| WO2013018842A1 (ja) * | 2011-08-02 | 2013-02-07 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| CN110137180A (zh) * | 2018-02-08 | 2019-08-16 | 爱思开海力士有限公司 | 铁电器件及其制造方法 |
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