JP2002198496A - 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 - Google Patents

強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置

Info

Publication number
JP2002198496A
JP2002198496A JP2000394958A JP2000394958A JP2002198496A JP 2002198496 A JP2002198496 A JP 2002198496A JP 2000394958 A JP2000394958 A JP 2000394958A JP 2000394958 A JP2000394958 A JP 2000394958A JP 2002198496 A JP2002198496 A JP 2002198496A
Authority
JP
Japan
Prior art keywords
ferroelectric
thin film
film
functional thin
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000394958A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002198496A5 (enExample
Inventor
Hisao Nishikawa
尚男 西川
Hiroshi Takiguchi
宏志 瀧口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2000394958A priority Critical patent/JP2002198496A/ja
Publication of JP2002198496A publication Critical patent/JP2002198496A/ja
Publication of JP2002198496A5 publication Critical patent/JP2002198496A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2000394958A 2000-12-26 2000-12-26 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置 Withdrawn JP2002198496A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000394958A JP2002198496A (ja) 2000-12-26 2000-12-26 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000394958A JP2002198496A (ja) 2000-12-26 2000-12-26 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006341826A Division JP2007096346A (ja) 2006-12-19 2006-12-19 強誘電体キャパシタおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2002198496A true JP2002198496A (ja) 2002-07-12
JP2002198496A5 JP2002198496A5 (enExample) 2006-10-19

Family

ID=18860505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000394958A Withdrawn JP2002198496A (ja) 2000-12-26 2000-12-26 強誘電体キャパシタおよびその製造方法ならびに強誘電体メモリ装置

Country Status (1)

Country Link
JP (1) JP2002198496A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US7031138B2 (en) * 2002-12-09 2006-04-18 Infineon Technologies Ag Ferroelectric capacitor and process for its manufacture
JP2006310799A (ja) * 2005-03-28 2006-11-09 Semiconductor Energy Lab Co Ltd メモリ装置およびその作製方法
WO2007086126A1 (ja) * 2006-01-26 2007-08-02 Fujitsu Limited 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法
KR100751882B1 (ko) 2006-01-06 2007-08-23 박철민 고분자강유전체램의 하부전극 표면 개질 방법 및 그 방법에의해 제조된 고분자강유전체램
US8238152B2 (en) 2005-03-28 2012-08-07 Semiconductor Energy Laboratory Co. Ltd. Memory device and manufacturing method the same
WO2013018842A1 (ja) * 2011-08-02 2013-02-07 日本電気株式会社 半導体装置及びその製造方法
CN110137180A (zh) * 2018-02-08 2019-08-16 爱思开海力士有限公司 铁电器件及其制造方法

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7031138B2 (en) * 2002-12-09 2006-04-18 Infineon Technologies Ag Ferroelectric capacitor and process for its manufacture
JP2005327919A (ja) * 2004-05-14 2005-11-24 Seiko Epson Corp デバイスの製造方法及びデバイス、電気光学素子、プリンタ
US8526216B2 (en) 2005-03-28 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
JP2006310799A (ja) * 2005-03-28 2006-11-09 Semiconductor Energy Lab Co Ltd メモリ装置およびその作製方法
US9786669B2 (en) 2005-03-28 2017-10-10 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US9129866B2 (en) 2005-03-28 2015-09-08 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
US8238152B2 (en) 2005-03-28 2012-08-07 Semiconductor Energy Laboratory Co. Ltd. Memory device and manufacturing method the same
US8804404B2 (en) 2005-03-28 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Memory device and manufacturing method the same
KR100751882B1 (ko) 2006-01-06 2007-08-23 박철민 고분자강유전체램의 하부전극 표면 개질 방법 및 그 방법에의해 제조된 고분자강유전체램
WO2007086126A1 (ja) * 2006-01-26 2007-08-02 Fujitsu Limited 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法
JP4973502B2 (ja) * 2006-01-26 2012-07-11 富士通セミコンダクター株式会社 強誘電体メモリ装置およびその製造方法、半導体装置の製造方法
US7893472B2 (en) 2006-01-26 2011-02-22 Fujitsu Semiconductor Limited Ferroelectric memory device, ferroelectric memory manufacturing method, and semiconductor manufacturing method
WO2013018842A1 (ja) * 2011-08-02 2013-02-07 日本電気株式会社 半導体装置及びその製造方法
CN110137180A (zh) * 2018-02-08 2019-08-16 爱思开海力士有限公司 铁电器件及其制造方法

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